[go: up one dir, main page]

DE60300477D1 - Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren - Google Patents

Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren

Info

Publication number
DE60300477D1
DE60300477D1 DE60300477T DE60300477T DE60300477D1 DE 60300477 D1 DE60300477 D1 DE 60300477D1 DE 60300477 T DE60300477 T DE 60300477T DE 60300477 T DE60300477 T DE 60300477T DE 60300477 D1 DE60300477 D1 DE 60300477D1
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
vertical nanotubes
nanotubes
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60300477T
Other languages
English (en)
Other versions
DE60300477T2 (de
Inventor
Won-Bong Choi
Jo-Won Lee
Ho-Kyu Kang
Chung-Woo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE60300477D1 publication Critical patent/DE60300477D1/de
Application granted granted Critical
Publication of DE60300477T2 publication Critical patent/DE60300477T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE60300477T 2002-11-15 2003-11-11 Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren Expired - Lifetime DE60300477T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2002071041 2002-11-15
KR1020020071041A KR100790859B1 (ko) 2002-11-15 2002-11-15 수직 나노튜브를 이용한 비휘발성 메모리 소자

Publications (2)

Publication Number Publication Date
DE60300477D1 true DE60300477D1 (de) 2005-05-12
DE60300477T2 DE60300477T2 (de) 2006-02-23

Family

ID=32171633

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60300477T Expired - Lifetime DE60300477T2 (de) 2002-11-15 2003-11-11 Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren

Country Status (6)

Country Link
US (1) US6930343B2 (de)
EP (1) EP1420414B1 (de)
JP (2) JP4047797B2 (de)
KR (1) KR100790859B1 (de)
CN (1) CN1317768C (de)
DE (1) DE60300477T2 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10250829B4 (de) * 2002-10-31 2006-11-02 Infineon Technologies Ag Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle
CA2528804A1 (en) * 2003-06-09 2005-01-06 Nantero, Inc Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
KR101015498B1 (ko) * 2003-06-14 2011-02-21 삼성전자주식회사 수직 카본나노튜브 전계효과트랜지스터 및 그 제조방법
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
JP2008505476A (ja) * 2004-06-30 2008-02-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノワイヤによってコンタクトがとられる導電性材料の層を有する電子装置を製造する方法
KR100666187B1 (ko) * 2004-08-04 2007-01-09 학교법인 한양학원 나노선을 이용한 수직형 반도체 소자 및 이의 제조 방법
US7233071B2 (en) * 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
DE102004049452A1 (de) * 2004-10-11 2006-04-20 Infineon Technologies Ag Mikroelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines mikroelektronischen Halbleiterbauelements
KR100657910B1 (ko) * 2004-11-10 2006-12-14 삼성전자주식회사 멀티비트 플래시 메모리 소자, 그 동작 방법, 및 그 제조방법
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7535016B2 (en) * 2005-01-31 2009-05-19 International Business Machines Corporation Vertical carbon nanotube transistor integration
KR100688542B1 (ko) * 2005-03-28 2007-03-02 삼성전자주식회사 수직형 나노튜브 반도체소자 및 그 제조방법
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7838943B2 (en) * 2005-07-25 2010-11-23 International Business Machines Corporation Shared gate for conventional planar device and horizontal CNT
US7352607B2 (en) 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes
EP1763037A1 (de) 2005-09-08 2007-03-14 STMicroelectronics S.r.l. Auf passivierten Nanopartikeln basierende Kohlenstoffnanoröhrenspeicherzelle mit schwebendem gate und deren Herstellungsverfahren
DE102005046427B4 (de) * 2005-09-28 2010-09-23 Infineon Technologies Ag Leistungstransistor mit parallelgeschalteten Nanodrähten
KR100723412B1 (ko) * 2005-11-10 2007-05-30 삼성전자주식회사 나노튜브를 이용하는 비휘발성 메모리 소자
KR100695167B1 (ko) * 2006-01-04 2007-03-14 삼성전자주식회사 다중벽 탄소나노튜브를 이용한 불휘발성 탄소나노튜브메모리 소자 및 그 동작방법
KR100721020B1 (ko) * 2006-01-20 2007-05-23 삼성전자주식회사 콘택 구조체를 포함하는 반도체 소자 및 그 형성 방법
GB0611557D0 (en) * 2006-06-12 2006-07-19 Univ Belfast Nanostructured systems and a method of manufacture of the same
KR100806129B1 (ko) 2006-08-02 2008-02-22 삼성전자주식회사 탄소 나노 튜브의 형성 방법
KR100749751B1 (ko) 2006-08-02 2007-08-17 삼성전자주식회사 트랜지스터 및 그 제조 방법
KR100745769B1 (ko) * 2006-09-11 2007-08-02 삼성전자주식회사 나노와이어 전기기계 스위칭 소자 및 그 제조방법, 상기나노와이어 전기기계 소자를 이용한 전기기계 메모리 소자
KR100820174B1 (ko) 2006-12-05 2008-04-08 한국전자통신연구원 수직구조의 탄소나노튜브를 이용한 전자소자 및 그제조방법
WO2008069485A1 (en) * 2006-12-05 2008-06-12 Electronics And Telecommunications Research Institute The electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
GB0801494D0 (en) * 2007-02-23 2008-03-05 Univ Ind & Acad Collaboration Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same
WO2008129478A1 (en) * 2007-04-19 2008-10-30 Nxp B.V. Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
KR100866966B1 (ko) 2007-05-10 2008-11-06 삼성전자주식회사 비휘발성 메모리 소자, 그 제조 방법 및 반도체 패키지
CN101689547B (zh) * 2007-05-24 2012-06-27 独立行政法人产业技术综合研究所 存储元件及其读取方法
US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8940645B2 (en) 2007-05-25 2015-01-27 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
US20090179253A1 (en) 2007-05-25 2009-07-16 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8633537B2 (en) 2007-05-25 2014-01-21 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US20110018053A1 (en) * 2007-12-07 2011-01-27 Agency For Science, Technology And Research Memory cell and methods of manufacturing thereof
WO2009072984A1 (en) * 2007-12-07 2009-06-11 Agency For Science, Technology And Research A silicon-germanium nanowire structure and a method of forming the same
KR101002336B1 (ko) 2008-02-04 2010-12-20 엘지디스플레이 주식회사 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법
US20110117149A1 (en) * 2008-07-07 2011-05-19 Nanunanu Ltd. Inorganic nanotubes
KR20110042178A (ko) 2008-07-09 2011-04-25 큐나노 에이비 나노구조 메모리 디바이스
KR101061150B1 (ko) * 2009-05-22 2011-08-31 서울대학교산학협력단 발광 디바이스와 이의 제조 방법
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
TWI476948B (zh) * 2011-01-27 2015-03-11 Hon Hai Prec Ind Co Ltd 外延結構及其製備方法
FR2980918B1 (fr) * 2011-10-04 2014-03-07 Univ Granada Point memoire ram a un transistor
EP3709370A1 (de) * 2012-03-31 2020-09-16 Longitude Flash Memory Solutions Ltd. Oxid-nitrid-oxid-stapel mit mehreren oxynitridschichten
CN102931237B (zh) * 2012-10-10 2015-07-22 哈尔滨工程大学 垂直非对称环栅mosfet器件的结构及其制造方法
US9917169B2 (en) * 2014-07-02 2018-03-13 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of formation
US10222346B2 (en) * 2017-01-09 2019-03-05 National Research Council Of Canada Decomposable S-tetrazine based polymers for single walled carbon nanotube applications
CN110176489A (zh) * 2019-05-14 2019-08-27 中国科学院微电子研究所 纳米级晶体管及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3392547B2 (ja) * 1994-11-21 2003-03-31 株式会社東芝 不揮発性半導体記憶装置
JPH102002A (ja) * 1996-06-17 1998-01-06 Daiwa:Kk 排水桝と排水桝の内底形成方法
JPH1093083A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 半導体装置の製造方法
EP1157386B1 (de) * 1999-02-12 2006-05-31 Board of Trustees operating Michigan State University Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung
JP2001077219A (ja) * 1999-06-29 2001-03-23 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR100343210B1 (ko) * 1999-08-11 2002-07-10 윤종용 단일 전자 충전 ｍｎｏｓ계 메모리 및 그 구동 방법
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
US6798000B2 (en) * 2000-07-04 2004-09-28 Infineon Technologies Ag Field effect transistor
KR100791732B1 (ko) * 2000-08-22 2008-01-04 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 전기 디바이스
KR100393189B1 (ko) * 2001-01-10 2003-07-31 삼성전자주식회사 탄소나노튜브를 이용한 ｍｒａｍ 및 그 제조 방법
JP5165828B2 (ja) * 2002-02-09 2013-03-21 三星電子株式会社 炭素ナノチューブを用いるメモリ素子及びその製造方法
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same

Also Published As

Publication number Publication date
KR20040043043A (ko) 2004-05-22
JP2004172616A (ja) 2004-06-17
JP5307993B2 (ja) 2013-10-02
US20040095837A1 (en) 2004-05-20
KR100790859B1 (ko) 2008-01-03
EP1420414A1 (de) 2004-05-19
CN1317768C (zh) 2007-05-23
JP2007329500A (ja) 2007-12-20
EP1420414B1 (de) 2005-04-06
US6930343B2 (en) 2005-08-16
CN1501503A (zh) 2004-06-02
DE60300477T2 (de) 2006-02-23
JP4047797B2 (ja) 2008-02-13

Similar Documents

Publication Publication Date Title
DE60300477D1 (de) Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren
DE60332081D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
GB2418535B (en) Non-volatile memory device
DE602004007173D1 (de) Nichtflüchtiger Halbleiterspeicher
DE60314068D1 (de) Nichtflüchtiger Halbleiterspeicher
SE0200073D0 (sv) Delayed memory device
DE602004020504D1 (de) Speichersteuerung
DE60314401D1 (de) Flashspeicher mit molekularen kreuzleitungen
FI7658U1 (fi) Otorinologinen antolaite
DE60213560D1 (de) Halbleiterspeicher
NO20052317D0 (no) Multisyklus nedihullsanordning.
DE60239899D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60325596D1 (de) Speicher-krafteinspritzvorrichtung
DE602005012115D1 (de) Speichervorrichtung mit verbesserter Schreibfähigkeit
DE60317381D1 (de) Halbleiterspeicher
SG113506A1 (en) Nonvolatile semiconductor memory device
ITTO20030231A1 (it) Dispositivo portaoggetti per veicoli
FI20020341A7 (fi) Turvasäilytyslaite
DE50302956D1 (de) Schminkgerät
DE60334276D1 (de) Programmierbarer Speichertransistor
DE60336787D1 (de) Halbleiterspeicher
DE502005010056D1 (de) Vorrichtung mit formgedächtniselement
DE602004004017D1 (de) Nichtflüchtiger Flash-Speicher
DE602004032076D1 (de) Speichervorrichtung
DE60300360D1 (de) Informationsspeichervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition