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DE60216241D1 - Rhodium-reiche sauerstoffbarrieren - Google Patents

Rhodium-reiche sauerstoffbarrieren

Info

Publication number
DE60216241D1
DE60216241D1 DE60216241T DE60216241T DE60216241D1 DE 60216241 D1 DE60216241 D1 DE 60216241D1 DE 60216241 T DE60216241 T DE 60216241T DE 60216241 T DE60216241 T DE 60216241T DE 60216241 D1 DE60216241 D1 DE 60216241D1
Authority
DE
Germany
Prior art keywords
rhodium
capacitor
oxygen barrier
rich oxygen
rich
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60216241T
Other languages
English (en)
Other versions
DE60216241T2 (de
Inventor
Haining Yang
Dan Gealy
S Sandhu
Howard Rhodes
Mark Visokay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60216241D1 publication Critical patent/DE60216241D1/de
Publication of DE60216241T2 publication Critical patent/DE60216241T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10P14/418—

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wrappers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE60216241T 2001-02-20 2002-02-11 Rhodium-reiche sauerstoffbarrieren Expired - Lifetime DE60216241T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/789,335 US6518610B2 (en) 2001-02-20 2001-02-20 Rhodium-rich oxygen barriers
US789335 2001-02-20
PCT/US2002/004090 WO2002067302A2 (en) 2001-02-20 2002-02-11 Rhodium-rich oxygen barriers

Publications (2)

Publication Number Publication Date
DE60216241D1 true DE60216241D1 (de) 2007-01-04
DE60216241T2 DE60216241T2 (de) 2007-04-19

Family

ID=25147325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60216241T Expired - Lifetime DE60216241T2 (de) 2001-02-20 2002-02-11 Rhodium-reiche sauerstoffbarrieren

Country Status (8)

Country Link
US (4) US6518610B2 (de)
EP (1) EP1368822B1 (de)
JP (1) JP4399521B2 (de)
KR (1) KR100610303B1 (de)
CN (1) CN100373543C (de)
AT (1) ATE346377T1 (de)
DE (1) DE60216241T2 (de)
WO (1) WO2002067302A2 (de)

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US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US20050035410A1 (en) * 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US7071052B2 (en) * 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US7888201B2 (en) 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
US20050186722A1 (en) * 2004-02-25 2005-08-25 Kuan-Lun Cheng Method and structure for CMOS device with stress relaxed by ion implantation of carbon or oxygen containing ions
US20050266632A1 (en) * 2004-05-26 2005-12-01 Yun-Hsiu Chen Integrated circuit with strained and non-strained transistors, and method of forming thereof
US7316962B2 (en) * 2005-01-07 2008-01-08 Infineon Technologies Ag High dielectric constant materials
US20060151822A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan DRAM with high K dielectric storage capacitor and method of making the same
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US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
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DE102005057255B4 (de) * 2005-12-01 2007-09-20 Infineon Technologies Ag Speicherkondensator und Verfahren zum Herstellen eines solchen Speicherkondensators
US7405154B2 (en) * 2006-03-24 2008-07-29 International Business Machines Corporation Structure and method of forming electrodeposited contacts
US8558278B2 (en) * 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
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US20090085085A1 (en) * 2007-10-01 2009-04-02 James Chyi Lai Dram cell with capacitor in the metal layer
US7943961B2 (en) * 2008-03-13 2011-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strain bars in stressed layers of MOS devices
US7808051B2 (en) * 2008-09-29 2010-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell without OD space effect in Y-direction
US8809827B1 (en) * 2013-03-13 2014-08-19 International Business Machines Corporation Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity
US9515251B2 (en) 2014-04-09 2016-12-06 International Business Machines Corporation Structure for thermally assisted MRAM
CN109219883B (zh) * 2016-08-31 2023-03-21 美光科技公司 存储器胞元和存储器阵列
EP3507830A4 (de) 2016-08-31 2020-04-01 Micron Technology, Inc. Speicherzellen und speicherarrays
CN109155310B (zh) 2016-08-31 2023-03-31 美光科技公司 存储器单元及存储器阵列
CN110192280A (zh) 2017-01-12 2019-08-30 美光科技公司 存储器单元、双晶体管单电容器存储器单元阵列、形成双晶体管单电容器存储器单元阵列的方法及用于制造集成电路的方法
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US10872763B2 (en) * 2019-05-03 2020-12-22 Applied Materials, Inc. Treatments to enhance material structures

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Also Published As

Publication number Publication date
WO2002067302A2 (en) 2002-08-29
US20020190303A1 (en) 2002-12-19
DE60216241T2 (de) 2007-04-19
US20030102501A1 (en) 2003-06-05
KR100610303B1 (ko) 2006-08-09
ATE346377T1 (de) 2006-12-15
EP1368822A2 (de) 2003-12-10
US20020113260A1 (en) 2002-08-22
JP2004532512A (ja) 2004-10-21
WO2002067302A3 (en) 2003-10-16
CN100373543C (zh) 2008-03-05
US20040212002A1 (en) 2004-10-28
US6518610B2 (en) 2003-02-11
US6740554B2 (en) 2004-05-25
KR20030088433A (ko) 2003-11-19
WO2002067302A8 (en) 2004-06-03
US7038263B2 (en) 2006-05-02
CN1518758A (zh) 2004-08-04
US6781175B2 (en) 2004-08-24
EP1368822B1 (de) 2006-11-22
JP4399521B2 (ja) 2010-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MOSAID TECHNOLOGIES INC., OTTAWA, ONTARIO, CA

8328 Change in the person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT