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DE60209697D1 - Einrichtung zur plasmaverarbeitung - Google Patents

Einrichtung zur plasmaverarbeitung

Info

Publication number
DE60209697D1
DE60209697D1 DE60209697T DE60209697T DE60209697D1 DE 60209697 D1 DE60209697 D1 DE 60209697D1 DE 60209697 T DE60209697 T DE 60209697T DE 60209697 T DE60209697 T DE 60209697T DE 60209697 D1 DE60209697 D1 DE 60209697D1
Authority
DE
Germany
Prior art keywords
plate
wave retardation
plasma processing
retardation plate
slot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60209697T
Other languages
English (en)
Other versions
DE60209697T2 (de
Inventor
Tadahiro Ohmi
Masaki Hirayama
Shigetoshi Sugawa
Tetsuya Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60209697D1 publication Critical patent/DE60209697D1/de
Publication of DE60209697T2 publication Critical patent/DE60209697T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • ing And Chemical Polishing (AREA)
DE60209697T 2001-03-28 2002-03-28 Einrichtung zur plasmaverarbeitung Expired - Lifetime DE60209697T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001094276 2001-03-28
JP2001094276 2001-03-28
JP2001340995A JP4402860B2 (ja) 2001-03-28 2001-11-06 プラズマ処理装置
JP2001340995 2001-11-06
PCT/JP2002/003112 WO2002080253A1 (en) 2001-03-28 2002-03-28 Device and method for plasma processing, and slow-wave plate

Publications (2)

Publication Number Publication Date
DE60209697D1 true DE60209697D1 (de) 2006-05-04
DE60209697T2 DE60209697T2 (de) 2006-11-09

Family

ID=26612453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60209697T Expired - Lifetime DE60209697T2 (de) 2001-03-28 2002-03-28 Einrichtung zur plasmaverarbeitung

Country Status (9)

Country Link
US (2) US7083701B2 (de)
EP (1) EP1300878B1 (de)
JP (1) JP4402860B2 (de)
KR (1) KR100497015B1 (de)
CN (1) CN1217390C (de)
AT (1) ATE320081T1 (de)
DE (1) DE60209697T2 (de)
IL (1) IL153157A0 (de)
WO (1) WO2002080253A1 (de)

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JP2005089823A (ja) * 2003-09-17 2005-04-07 Seiji Sagawa 成膜装置および成膜方法
JPWO2005055305A1 (ja) * 2003-12-04 2007-06-28 東京エレクトロン株式会社 半導体基板導電層表面の清浄化方法
WO2005067022A1 (ja) * 2003-12-26 2005-07-21 Tadahiro Ohmi シャワープレート、プラズマ処理装置、及び製品の製造方法
US20060081337A1 (en) * 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
CN1998272A (zh) * 2004-06-25 2007-07-11 东京毅力科创株式会社 等离子体处理装置
JP4093212B2 (ja) * 2004-07-23 2008-06-04 東京エレクトロン株式会社 プラズマ処理装置
US20060037702A1 (en) * 2004-08-20 2006-02-23 Tokyo Electron Limited Plasma processing apparatus
JP4701691B2 (ja) * 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
WO2006064898A1 (ja) * 2004-12-17 2006-06-22 Tokyo Electron Limited プラズマ処理装置
KR20060073737A (ko) * 2004-12-24 2006-06-29 삼성전자주식회사 플라즈마 장치
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
WO2006132957A2 (en) * 2005-06-07 2006-12-14 University Of Florida Research Foundation, Inc. Integrated electronic circuitry and heat sink
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7842135B2 (en) * 2006-01-09 2010-11-30 Aixtron Ag Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire
WO2007099957A1 (ja) * 2006-02-28 2007-09-07 Tokyo Electron Limited プラズマ処理装置およびそれに用いる基板加熱機構
JP2007250426A (ja) * 2006-03-17 2007-09-27 Sharp Corp プラズマ処理装置の電極構造およびこれを備えたプラズマ処理装置
US7485827B2 (en) 2006-07-21 2009-02-03 Alter S.R.L. Plasma generator
CN101632329B (zh) * 2007-06-11 2012-10-31 东京毅力科创株式会社 等离子体处理装置及处理方法
JP4931716B2 (ja) * 2007-07-18 2012-05-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成室
JP2009152265A (ja) * 2007-12-19 2009-07-09 Tohoku Univ 光電変換素子製造装置及び方法、並びに光電変換素子
US20090238998A1 (en) 2008-03-18 2009-09-24 Applied Materials, Inc. Coaxial microwave assisted deposition and etch systems
WO2009128886A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
CA2721095A1 (en) 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
JP5396745B2 (ja) * 2008-05-23 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
JP4593652B2 (ja) * 2008-06-06 2010-12-08 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP5213530B2 (ja) 2008-06-11 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
JP4694596B2 (ja) * 2008-06-18 2011-06-08 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波の給電方法
US8242405B2 (en) * 2008-07-15 2012-08-14 Tokyo Electron Limited Microwave plasma processing apparatus and method for producing cooling jacket
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
CN102027575B (zh) * 2008-08-22 2012-10-03 东京毅力科创株式会社 微波导入机构、微波等离子源以及微波等离子处理装置
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
JP5189999B2 (ja) * 2009-01-29 2013-04-24 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及びマイクロ波プラズマ処理装置のマイクロ波給電方法
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5461040B2 (ja) * 2009-03-23 2014-04-02 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
CN103003924B (zh) * 2010-06-28 2015-07-08 东京毅力科创株式会社 等离子体处理装置及方法
JP4918168B1 (ja) * 2011-03-31 2012-04-18 三井造船株式会社 誘導加熱装置
US9543123B2 (en) * 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP4980475B1 (ja) * 2011-03-31 2012-07-18 三井造船株式会社 誘導加熱装置
JP5005120B1 (ja) * 2012-01-26 2012-08-22 三井造船株式会社 誘導加熱方法
US20140263179A1 (en) * 2013-03-15 2014-09-18 Lam Research Corporation Tuning system and method for plasma-based substrate processing systems
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
KR102278075B1 (ko) * 2014-05-30 2021-07-19 세메스 주식회사 유전판 및 이를 포함하는 기판 처리 장치
EP3064765A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verbrennungsmotor
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
WO2016178674A1 (en) * 2015-05-06 2016-11-10 Reyes Armando Portfolio with integrated computer and accessory pockets
JP6509049B2 (ja) * 2015-06-05 2019-05-08 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP6994981B2 (ja) * 2018-02-26 2022-01-14 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
CN111836916B (zh) * 2019-02-13 2022-06-14 东芝三菱电机产业系统株式会社 活性气体生成装置
US12033835B2 (en) * 2020-06-10 2024-07-09 Applied Materials, Inc. Modular microwave source with multiple metal housings

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US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
JPH0963793A (ja) 1995-08-25 1997-03-07 Tokyo Electron Ltd プラズマ処理装置
JP3549739B2 (ja) 1998-08-27 2004-08-04 忠弘 大見 プラズマ処理装置
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
JP4053173B2 (ja) 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
JP2001203098A (ja) * 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2000286240A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
US6388632B1 (en) * 1999-03-30 2002-05-14 Rohm Co., Ltd. Slot antenna used for plasma surface processing apparatus
JP2000286237A (ja) 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
EP1115147A4 (de) 1999-05-26 2007-05-02 Tadahiro Ohmi Einrichtung zur plasma-behandlung
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
DE60038811D1 (de) * 1999-11-15 2008-06-19 Lam Res Corp Behandlungsvorrichtungen

Also Published As

Publication number Publication date
IL153157A0 (en) 2003-06-24
WO2002080253A1 (en) 2002-10-10
KR100497015B1 (ko) 2005-06-23
US7083701B2 (en) 2006-08-01
KR20030004429A (ko) 2003-01-14
US20060231208A1 (en) 2006-10-19
EP1300878A4 (de) 2004-08-25
JP2002355550A (ja) 2002-12-10
DE60209697T2 (de) 2006-11-09
JP4402860B2 (ja) 2010-01-20
CN1460288A (zh) 2003-12-03
EP1300878B1 (de) 2006-03-08
EP1300878A1 (de) 2003-04-09
US20040134613A1 (en) 2004-07-15
ATE320081T1 (de) 2006-03-15
CN1217390C (zh) 2005-08-31

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Legal Events

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