[go: up one dir, main page]

DE602008005858D1 - Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen - Google Patents

Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen

Info

Publication number
DE602008005858D1
DE602008005858D1 DE602008005858T DE602008005858T DE602008005858D1 DE 602008005858 D1 DE602008005858 D1 DE 602008005858D1 DE 602008005858 T DE602008005858 T DE 602008005858T DE 602008005858 T DE602008005858 T DE 602008005858T DE 602008005858 D1 DE602008005858 D1 DE 602008005858D1
Authority
DE
Germany
Prior art keywords
radio frequency
ion energy
controlling ion
frequency plasmas
plasmas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008005858T
Other languages
English (en)
Inventor
Brian George Heil
Uwe Czarnetzki
Ralf Peter Brinkmann
Thomas Mussenbrock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ruhr Universitaet Bochum
Original Assignee
Ruhr Universitaet Bochum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ruhr Universitaet Bochum filed Critical Ruhr Universitaet Bochum
Publication of DE602008005858D1 publication Critical patent/DE602008005858D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
DE602008005858T 2008-03-20 2008-07-11 Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen Active DE602008005858D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3826308P 2008-03-20 2008-03-20
PCT/EP2008/059133 WO2009115135A1 (en) 2008-03-20 2008-07-11 Method for controlling ion energy in radio frequency plasmas

Publications (1)

Publication Number Publication Date
DE602008005858D1 true DE602008005858D1 (de) 2011-05-12

Family

ID=39831709

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008005858T Active DE602008005858D1 (de) 2008-03-20 2008-07-11 Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen

Country Status (7)

Country Link
US (2) US8643280B2 (de)
EP (2) EP2122657B8 (de)
CN (1) CN101978461B (de)
AT (1) ATE504076T1 (de)
DE (1) DE602008005858D1 (de)
TW (1) TW200952560A (de)
WO (1) WO2009115135A1 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009115135A1 (en) 2008-03-20 2009-09-24 RUHR-UNIVERSITäT BOCHUM Method for controlling ion energy in radio frequency plasmas
DE102009020436A1 (de) 2008-11-04 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
EP2407998B1 (de) 2010-07-15 2019-02-13 Ecole Polytechnique Plasmaverarbeitung in einem kapazitativ gekopplten Reaktor mit trapezförmiger Wellenformerregung
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
WO2012156062A1 (de) * 2011-05-13 2012-11-22 Leybold Optics Gmbh Verfahren zur plasmabehandlung eines substrats in einer plasmavorrichtung
US20130122711A1 (en) * 2011-11-10 2013-05-16 Alexei Marakhtanov System, method and apparatus for plasma sheath voltage control
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
WO2014036000A1 (en) * 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
DE102014105445A1 (de) * 2013-04-26 2014-10-30 Mks Instruments Inc. Frequenz- und Phasensteuerung einer Multi-Radiofrequenz-Leistungsversorgung
US9336995B2 (en) 2013-04-26 2016-05-10 Mks Instruments, Inc. Multiple radio frequency power supply control of frequency and phase
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US20150107618A1 (en) * 2013-10-21 2015-04-23 Applied Materials, Inc. Oxygen containing plasma cleaning to remove contamination from electronic device components
KR102133895B1 (ko) 2013-11-06 2020-07-15 어플라이드 머티어리얼스, 인코포레이티드 Ｄｃ 바이어스 변조에 의한 입자 발생 억제기
FR3020718B1 (fr) 2014-05-02 2016-06-03 Ecole Polytech Procede et systeme pour controler des flux d'ions dans un plasma rf.
US9026407B1 (en) 2014-10-16 2015-05-05 Christine Marie Kennefick Method of making and using a material model of elements with planar faces
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
KR20170024922A (ko) * 2015-08-26 2017-03-08 삼성전자주식회사 플라즈마 발생 장치
US10395895B2 (en) 2015-08-27 2019-08-27 Mks Instruments, Inc. Feedback control by RF waveform tailoring for ion energy distribution
US10008366B2 (en) 2015-09-08 2018-06-26 Applied Materials, Inc. Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing
US9644271B1 (en) * 2016-05-13 2017-05-09 Lam Research Corporation Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
US9852889B1 (en) 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
JP6643212B2 (ja) * 2016-09-16 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
EP3309815B1 (de) * 2016-10-12 2019-03-20 Meyer Burger (Germany) AG Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
US9812295B1 (en) 2016-11-15 2017-11-07 Lyten, Inc. Microwave chemical processing
US9767992B1 (en) 2017-02-09 2017-09-19 Lyten, Inc. Microwave chemical processing reactor
US9997334B1 (en) 2017-02-09 2018-06-12 Lyten, Inc. Seedless particles with carbon allotropes
KR102507791B1 (ko) 2017-03-16 2023-03-08 라이텐, 인코포레이티드 탄소 및 엘라스토머 통합
US10920035B2 (en) 2017-03-16 2021-02-16 Lyten, Inc. Tuning deformation hysteresis in tires using graphene
JP7018288B2 (ja) * 2017-10-10 2022-02-10 東京エレクトロン株式会社 成膜方法
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理系统中的调制电源的改进应用
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
TWI804836B (zh) 2017-11-17 2023-06-11 新加坡商Aes 全球公司 用於電漿處理之方法和系統以及相關的非暫時性電腦可讀取媒體
WO2019099925A1 (en) * 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
WO2019126196A1 (en) 2017-12-22 2019-06-27 Lyten, Inc. Structured composite materials
CN119044254A (zh) * 2018-01-04 2024-11-29 利腾股份有限公司 谐振气体传感器
WO2019143559A1 (en) 2018-01-16 2019-07-25 Lyten, Inc. Microwave transparent pressure barrier
US10304669B1 (en) * 2018-01-21 2019-05-28 Mks Instruments, Inc. Adaptive counter measure control thwarting IMD jamming impairments for RF plasma systems
TWI826925B (zh) 2018-03-01 2023-12-21 美商應用材料股份有限公司 電漿源組件和氣體分配組件
US12224156B2 (en) 2018-03-01 2025-02-11 Applied Materials, Inc. Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
US20190311884A1 (en) * 2018-04-04 2019-10-10 Applied Materials, Inc. Rf tailored voltage on bias operation
CN111373504B (zh) * 2018-04-04 2023-01-06 应用材料公司 偏置操作上的rf定制电压
US10998170B2 (en) 2018-04-13 2021-05-04 Tokyo Electron Limited Method for ion mass separation and ion energy control in process plasmas
US20190318913A1 (en) * 2018-04-13 2019-10-17 Tokyo Electron Limited Apparatus and Method for Controlling Ion Energy Distribution in Process Plasmas
CN111937114B (zh) * 2018-04-13 2024-09-17 东京毅力科创株式会社 用于在加工等离子体时控制离子能量分布的装置和方法
US10916409B2 (en) * 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
CN111092008A (zh) * 2018-10-24 2020-05-01 江苏鲁汶仪器有限公司 一种感应耦合等离子体刻蚀设备及刻蚀方法
US11476092B2 (en) * 2019-05-31 2022-10-18 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
CN114222958B (zh) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 具有单个受控开关的偏置电源
CN110310878B (zh) 2019-08-28 2019-11-12 中微半导体设备(上海)股份有限公司 一种等离子体处理器及其处理方法
JP7262375B2 (ja) * 2019-11-26 2023-04-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN113035677B (zh) * 2019-12-09 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体处理设备以及等离子体处理方法
SE544676C2 (en) 2020-04-06 2022-10-11 Ionautics Ab Method for monitoring process conditions of, and method for controlling, a plasma pvd process
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
CN112259434A (zh) * 2020-11-04 2021-01-22 大连理工大学 一种任意波形驱动放电控制系统
US20250104982A1 (en) * 2021-07-22 2025-03-27 Lam Research Corporation Monitoring and control of plasma-based processes
CN113652674A (zh) * 2021-09-07 2021-11-16 佛山市思博睿科技有限公司 一种基于磁约束等离子体超双疏膜层的制备装置及方法
US12106925B2 (en) 2021-12-23 2024-10-01 Applied Materials, Inc. Cyclotron having continuously variable energy output
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
WO2023238235A1 (ja) 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325019A (en) * 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
WO1999014699A1 (en) * 1997-09-17 1999-03-25 Tokyo Electron Limited System and method for monitoring and controlling gas plasma processes
DE60023964T2 (de) * 1999-02-01 2006-06-22 Ohmi, Tadahiro, Sendai Laservorrichtung, Belichtungsapparat unter Verwendung derselben und Herstellungsverfahren
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
WO2002054835A2 (en) * 2001-01-08 2002-07-11 Tokyo Electron Limited Addition of power at selected harmonics of plasma processor drive frequency
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
JP4804824B2 (ja) * 2005-07-27 2011-11-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
WO2009115135A1 (en) 2008-03-20 2009-09-24 RUHR-UNIVERSITäT BOCHUM Method for controlling ion energy in radio frequency plasmas

Also Published As

Publication number Publication date
EP2122657B8 (de) 2011-06-22
US20110248634A1 (en) 2011-10-13
ATE504076T1 (de) 2011-04-15
EP2249372A1 (de) 2010-11-10
US20140103808A1 (en) 2014-04-17
EP2122657A1 (de) 2009-11-25
US8933629B2 (en) 2015-01-13
EP2122657B1 (de) 2011-03-30
EP2249372B1 (de) 2013-01-02
WO2009115135A1 (en) 2009-09-24
US8643280B2 (en) 2014-02-04
CN101978461B (zh) 2013-09-11
TW200952560A (en) 2009-12-16
CN101978461A (zh) 2011-02-16

Similar Documents

Publication Publication Date Title
DE602008005858D1 (de) Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen
WO2008016747A3 (en) Method and system for controlling the uniformity of a ballistic electron beam by rf modulation
WO2009154979A3 (en) Driving a mass spectrometer ion trap or mass filter
JP2014107363A5 (de)
WO2013070472A3 (en) System, method and apparatus for plasma sheath voltage control
WO2012005881A3 (en) Methods and apparatus for radio frequency (rf) plasma processing
SG10201908638WA (en) Feedback control by rf waveform tailoring for ion energy distribution
KR20180084647A (ko) 플라즈마 처리 장치
WO2012122559A3 (en) Method and apparatus for treating containers
WO2014151895A3 (en) Method and apparatus for generating highly repetitive pulsed plasmas
JP2014179576A5 (ja) プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
WO2014006510A3 (en) Rf energy application based on electromagnetic feedback
EP2178106A3 (de) Vorrichtung zur Erzeugung eines entfernten Plasmas
JP2016092342A5 (de)
WO2011105873A3 (ko) 펄스 플라즈마의 dc 파워 인가에 따른 동기화 제어 방법
WO2010132246A3 (en) System and method for efficiently generating an oscillating signal
WO2013036371A3 (en) Pulsed plasma chamber in dual chamber configuration
IN2014DN03494A (de)
WO2010048076A3 (en) Plasma source for chamber cleaning and process
WO2012153332A3 (en) Medical device for tissue welding using plasma
EP2670553A1 (de) Rauchabsauger für schweissanwendungen
JP2016032096A5 (de)
WO2010011771A3 (en) Automatic gain control (agc) method for an ion trap and a temporally non-uniform ion beam
WO2014006494A3 (en) Apparatus for and method of energy replacement in a welding waveform during welding based on difference between determined power output and desired power output
WO2013017253A3 (de) Elektrische versorgungsvorrichtung mit leistungsfaktorkorrektur und anpassung des stromformsignal sowie verfahren zum betrieb