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DE602007007020D1 - EUV-Lichtquelle, deren aktives Material vor der Plasmazündung durch einen Energiestrahl verdampft wird - Google Patents

EUV-Lichtquelle, deren aktives Material vor der Plasmazündung durch einen Energiestrahl verdampft wird

Info

Publication number
DE602007007020D1
DE602007007020D1 DE602007007020T DE602007007020T DE602007007020D1 DE 602007007020 D1 DE602007007020 D1 DE 602007007020D1 DE 602007007020 T DE602007007020 T DE 602007007020T DE 602007007020 T DE602007007020 T DE 602007007020T DE 602007007020 D1 DE602007007020 D1 DE 602007007020D1
Authority
DE
Germany
Prior art keywords
vaporized
light source
active material
energy beam
euv light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007007020T
Other languages
English (en)
Inventor
Takahiro Shirai
Hiroto Sato
Kazunori Bessho
Yusuke Teramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of DE602007007020D1 publication Critical patent/DE602007007020D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/007—Production of X-ray radiation generated from plasma involving electric or magnetic fields in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE602007007020T 2006-07-28 2007-07-27 EUV-Lichtquelle, deren aktives Material vor der Plasmazündung durch einen Energiestrahl verdampft wird Active DE602007007020D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006205807 2006-07-28

Publications (1)

Publication Number Publication Date
DE602007007020D1 true DE602007007020D1 (de) 2010-07-22

Family

ID=38581958

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007007020T Active DE602007007020D1 (de) 2006-07-28 2007-07-27 EUV-Lichtquelle, deren aktives Material vor der Plasmazündung durch einen Energiestrahl verdampft wird

Country Status (5)

Country Link
US (1) US7626188B2 (de)
EP (1) EP1883280B1 (de)
KR (1) KR20080011048A (de)
DE (1) DE602007007020D1 (de)
TW (1) TW200808134A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005030304B4 (de) * 2005-06-27 2008-06-26 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8901521B2 (en) 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
JP2009099390A (ja) 2007-10-17 2009-05-07 Tokyo Institute Of Technology 極端紫外光光源装置および極端紫外光発生方法
DE102007060807B4 (de) * 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
EP2083328B1 (de) * 2008-01-28 2013-06-19 Media Lario s.r.l. Kollektor für streifenden Strahlungseinfall geeignet für lasererzeugte Plasmaquellen
JP5732392B2 (ja) * 2008-08-14 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源およびリソグラフィ装置
JP5454881B2 (ja) * 2008-08-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
DE102008049494A1 (de) * 2008-09-27 2010-04-08 Xtreme Technologies Gmbh Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen
JP5687488B2 (ja) * 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
JP5093267B2 (ja) * 2010-03-11 2012-12-12 ウシオ電機株式会社 集光鏡アッセンブリおよびこの集光鏡アッセンブリを用いた極端紫外光光源装置
CN103108480B (zh) * 2012-11-22 2015-09-23 中国科学院微电子研究所 一种euv光源污染物收集装置
JP6477179B2 (ja) * 2015-04-07 2019-03-06 ウシオ電機株式会社 放電電極及び極端紫外光光源装置
EP3291650B1 (de) * 2016-09-02 2019-06-05 ETH Zürich Vorrichtung und verfahren zur erzeugung von uv- oder röntgenstrahlung mittels eines plasmas
CN108020572B (zh) * 2016-10-31 2020-07-10 清华大学 碳纳米管的表征方法
DE102021106289A1 (de) * 2020-05-07 2021-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. System und verfahren zum ausführen von extrem-ultraviolett-photolithografieprozessen
US11848548B1 (en) * 2023-02-27 2023-12-19 Sunrun Inc. Enclosure assembly with housing
CN116273535A (zh) * 2023-03-17 2023-06-23 浙江大学 一种euv光源靶滴的运动形态控制存储装置及控制方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972421B2 (en) 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
GB0111204D0 (en) * 2001-05-08 2001-06-27 Mertek Ltd High flux,high energy photon source
EP1406124A1 (de) * 2002-10-03 2004-04-07 ASML Netherlands B.V. Strahlungsquelle, lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
CN100476585C (zh) 2002-12-23 2009-04-08 Asml荷兰有限公司 具有可扩展薄片的杂质屏蔽
CN1820556B (zh) 2003-06-27 2011-07-06 法国原子能委员会 产生极端紫外辐射或软x射线辐射的方法及装置
DE10342239B4 (de) 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
RU2278483C2 (ru) 2004-04-14 2006-06-20 Владимир Михайлович Борисов Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы
US7688948B2 (en) * 2004-11-29 2010-03-30 Koninklijke Philips Electronics N.V. Method and apparatus for generating radiation in the wavelength range from about 1 nm to about 30 nm, and use in a lithography device or in metrology

Also Published As

Publication number Publication date
TW200808134A (en) 2008-02-01
EP1883280B1 (de) 2010-06-09
US20080048134A1 (en) 2008-02-28
US7626188B2 (en) 2009-12-01
KR20080011048A (ko) 2008-01-31
EP1883280A1 (de) 2008-01-30

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