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DE602007006935D1 - Geräuscharme elektronische Schaltung - Google Patents

Geräuscharme elektronische Schaltung

Info

Publication number
DE602007006935D1
DE602007006935D1 DE200760006935 DE602007006935T DE602007006935D1 DE 602007006935 D1 DE602007006935 D1 DE 602007006935D1 DE 200760006935 DE200760006935 DE 200760006935 DE 602007006935 T DE602007006935 T DE 602007006935T DE 602007006935 D1 DE602007006935 D1 DE 602007006935D1
Authority
DE
Germany
Prior art keywords
electronic circuit
low noise
noise electronic
low
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200760006935
Other languages
English (en)
Inventor
Ian Juso Dedic
Abbas Mohammad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Publication of DE602007006935D1 publication Critical patent/DE602007006935D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
DE200760006935 2007-06-29 2007-06-29 Geräuscharme elektronische Schaltung Active DE602007006935D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP20070111485 EP2009795B1 (de) 2007-06-29 2007-06-29 Geräuscharme elektronische Schaltung

Publications (1)

Publication Number Publication Date
DE602007006935D1 true DE602007006935D1 (de) 2010-07-15

Family

ID=38523508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200760006935 Active DE602007006935D1 (de) 2007-06-29 2007-06-29 Geräuscharme elektronische Schaltung

Country Status (2)

Country Link
EP (1) EP2009795B1 (de)
DE (1) DE602007006935D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2849345B1 (de) 2013-09-12 2020-11-04 Socionext Inc. Schaltungen und Verfahren zur Verwendung in Schaltungen mit gemischten Signalen
EP3062189B1 (de) 2013-09-12 2020-06-24 Socionext Inc. Schaltungen, die zur takterzeugung und verteilung verwendbar sind
EP2849344B1 (de) 2013-09-12 2019-11-06 Socionext Inc. Schaltungen und Verfahren zur Verwendung in Schaltungen mit gemischten Signalen
US9054722B2 (en) 2013-09-12 2015-06-09 Fujitsu Semiconductor Limited Circuitry and methods for use in mixed-signal circuitry
EP2849543B1 (de) 2013-09-12 2021-02-24 Socionext Inc. Bauelemente und Schaltungen zum Abschluss von Ausgängen
US8976050B1 (en) 2013-09-12 2015-03-10 Fujitsu Semiconductor Limited Circuitry and methods for use in mixed-signal circuitry
EP2849346B1 (de) 2013-09-12 2019-08-21 Socionext Inc. Schaltungen für gemischte Signalen
EP2849021B1 (de) 2013-09-12 2020-01-01 Socionext Inc. Signalausrichtungsschaltungen und Verfahren
US9201813B2 (en) 2013-09-12 2015-12-01 Socionext Inc. Signal distribution circuitry
EP3155878A4 (de) * 2014-06-16 2018-03-14 Rensselaer Polytechnic Institute Systeme und verfahren zur beleuchtung einer umgebung
CN120016819B (zh) * 2025-04-22 2025-07-18 西安交通大学 一种基于方波解析重构的数字有源emi滤波方法及电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477481A (en) * 1991-02-15 1995-12-19 Crystal Semiconductor Corporation Switched-capacitor integrator with chopper stabilization performed at the sampling rate
GB2289811B (en) * 1991-06-06 1996-01-24 Crystal Semiconductor Corp Amplifier
GB2412260B (en) * 2004-03-16 2007-09-26 Wolfson Microelectronics Plc Low noise op amp

Also Published As

Publication number Publication date
EP2009795A1 (de) 2008-12-31
EP2009795B1 (de) 2010-06-02

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE