DE602006002187D1 - Lichtemittierende Anzeigentafel - Google Patents

Lichtemittierende Anzeigentafel

Info

Publication number: DE602006002187D1
Authority: DE; Germany
Prior art keywords: light; display panel; emitting display; emitting; panel
Prior art date: 2005-06-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

DE602006002187T

Other languages

English (en)

Inventor

Samsung Sd Choi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Display Co Ltd

Original Assignee

Samsung SDI Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-06-22

Filing date

2006-06-22

Publication date

2008-09-25

2006-06-22 Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd

2008-09-25 Publication of DE602006002187D1 publication Critical patent/DE602006002187D1/de

Status Active legal-status Critical Current

2026-06-23 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays

DE602006002187T 2005-06-22 2006-06-22 Lichtemittierende Anzeigentafel Active DE602006002187D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1020050053975A KR100624314B1 (ko)	2005-06-22	2005-06-22	발광표시장치 및 박막트랜지스터

Publications (1)

Publication Number	Publication Date
DE602006002187D1 true DE602006002187D1 (de)	2008-09-25

Family

ID=37026972

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE602006002187T Active DE602006002187D1 (de)	2005-06-22	2006-06-22	Lichtemittierende Anzeigentafel

Country Status (6)

Country	Link
US (1)	US9196747B2 (de)
EP (1)	EP1737046B1 (de)
JP (1)	JP2007005766A (de)
KR (1)	KR100624314B1 (de)
CN (1)	CN1885552B (de)
DE (1)	DE602006002187D1 (de)

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KR100778514B1 (ko)	2006-08-09	2007-11-22	삼성에스디아이 주식회사	유기 발광 표시 장치
KR100786846B1 (ko)	2006-11-10	2007-12-20	삼성에스디아이 주식회사	유기전계발광표시장치 및 유기전계발광표시장치의 검출장치
JP2010039397A (ja)	2008-08-08	2010-02-18	Sony Corp	表示装置及び電子機器
KR20100036624A (ko) *	2008-09-30	2010-04-08	삼성전자주식회사	박막트랜지스터 기판 및 이를 갖는 유기발광 표시장치
JP5494115B2 (ja) *	2010-03-29	2014-05-14	ソニー株式会社	表示装置及び電子機器
KR101374477B1 (ko) *	2010-10-22	2014-03-14	엘지디스플레이 주식회사	유기발광다이오드 표시장치
WO2013015091A1 (en)	2011-07-22	2013-01-31	Semiconductor Energy Laboratory Co., Ltd.	Light-emitting device
KR101996038B1 (ko) *	2012-08-31	2019-07-03	엘지디스플레이 주식회사	평판표시장치
KR20150005105A (ko) *	2013-07-04	2015-01-14	삼성디스플레이 주식회사	표시 장치
KR20150054040A (ko) *	2013-11-08	2015-05-20	삼성디스플레이 주식회사	박막 트랜지스터 기판 및 이를 포함하는 유기 발광 표시 장치
KR102270081B1 (ko)	2014-09-16	2021-06-29	삼성디스플레이 주식회사	유기 발광 표시 장치
KR102300026B1 (ko) *	2015-01-08	2021-09-09	삼성디스플레이 주식회사	표시 장치
JP6662665B2 (ja) *	2015-03-19	2020-03-11	株式会社半導体エネルギー研究所	液晶表示装置及び該液晶表示装置を用いた電子機器
CN106663697B (zh) *	2015-03-27	2019-11-12	堺显示器制品株式会社	薄膜晶体管及显示面板
CN107086227B (zh) *	2017-05-11	2020-02-21	京东方科技集团股份有限公司	发光电路、电子装置、薄膜晶体管及其制备方法
KR102420080B1 (ko) *	2017-05-19	2022-07-13	삼성디스플레이 주식회사	다채널 박막 트랜지스터 및 이를 포함하는 화소
KR102723333B1 (ko) *	2020-05-14	2024-10-29	삼성디스플레이 주식회사	플렉서블 표시 장치

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US6229506B1 (en) *	1997-04-23	2001-05-08	Sarnoff Corporation	Active matrix light emitting diode pixel structure and concomitant method
US6512269B1 (en)	2000-09-07	2003-01-28	International Business Machines Corporation	High-voltage high-speed SOI MOSFET
JP4789369B2 (ja) *	2001-08-08	2011-10-12	株式会社半導体エネルギー研究所	表示装置及び電子機器
CN1207617C (zh)	2001-11-15	2005-06-22	Nec液晶技术株式会社	平面开关模式有源矩阵型液晶显示器件及其制造方法
JP2003241688A (ja) *	2002-02-18	2003-08-29	Matsushita Electric Ind Co Ltd	表示装置
CN100365827C (zh)	2002-03-25	2008-01-30	株式会社液晶先端技术开发中心	薄膜晶体管、电路装置及液晶显示器
JP4900756B2 (ja)	2002-04-16	2012-03-21	セイコーエプソン株式会社	半導体装置の製造方法、電気光学装置、集積回路、および電子機器
US6933529B2 (en)	2002-07-11	2005-08-23	Lg. Philips Lcd Co., Ltd.	Active matrix type organic light emitting diode device and thin film transistor thereof
JP3949040B2 (ja)	2002-09-25	2007-07-25	東北パイオニア株式会社	発光表示パネルの駆動装置
JP2004340981A (ja) *	2003-03-14	2004-12-02	Sony Corp	液晶表示装置
CN1328796C (zh)	2003-04-09	2007-07-25	友达光电股份有限公司	薄膜晶体管的双栅极布局结构
KR100560780B1 (ko) *	2003-07-07	2006-03-13	삼성에스디아이 주식회사	유기전계 발광표시장치의 화소회로 및 그의 구동방법
US6937215B2 (en) *	2003-11-03	2005-08-30	Wintek Corporation	Pixel driving circuit of an organic light emitting diode display panel
KR100599726B1 (ko) *	2003-11-27	2006-07-12	삼성에스디아이 주식회사	발광 표시 장치 및 그 표시 패널과 구동 방법
KR100557731B1 (ko) *	2003-12-27	2006-03-06	엘지.필립스 엘시디 주식회사	유기전계 발광소자와 그 제조방법
KR100979263B1 (ko)	2003-12-29	2010-08-31	엘지디스플레이 주식회사	액티브 매트릭스형 유기전계발광 소자용 구동용박막트랜지스터 및 상기 구동용 박막트랜지스터를포함하는 액티브 매트릭스형 유기전계발광 소자
KR100684712B1 (ko) *	2004-03-09	2007-02-20	삼성에스디아이 주식회사	발광 표시 장치
KR101076424B1 (ko) *	2004-03-31	2011-10-25	엘지디스플레이 주식회사	일렉트로 루미네센스 패널의 프리차지 방법 및 장치
KR100592641B1 (ko) *	2004-07-28	2006-06-26	삼성에스디아이 주식회사	화소 회로 및 그것을 채용한 유기 발광 표시 장치
KR100602361B1 (ko) *	2004-09-22	2006-07-19	삼성에스디아이 주식회사	디멀티플렉서 및 이를 이용한 발광 표시장치와 그의구동방법
KR100604057B1 (ko) *	2004-09-24	2006-07-24	삼성에스디아이 주식회사	화소 및 이를 이용한 발광 표시장치
KR100739318B1 (ko) *	2004-11-22	2007-07-12	삼성에스디아이 주식회사	화소회로 및 발광 표시장치
US7872620B2 (en) *	2005-04-29	2011-01-18	Seoul National University Industry Foundation	Pixel structure using voltage programming-type for active matrix organic light emitting device

2005
- 2005-06-22 KR KR1020050053975A patent/KR100624314B1/ko not_active Expired - Lifetime
2006
- 2006-04-13 JP JP2006111114A patent/JP2007005766A/ja active Pending
- 2006-06-08 US US11/448,684 patent/US9196747B2/en active Active
- 2006-06-22 DE DE602006002187T patent/DE602006002187D1/de active Active
- 2006-06-22 CN CN2006100900320A patent/CN1885552B/zh active Active
- 2006-06-22 EP EP06115852A patent/EP1737046B1/de active Active

Also Published As

Publication number	Publication date
KR100624314B1 (ko)	2006-09-19
JP2007005766A (ja)	2007-01-11
US20060290633A1 (en)	2006-12-28
EP1737046A1 (de)	2006-12-27
CN1885552B (zh)	2010-12-29
US9196747B2 (en)	2015-11-24
CN1885552A (zh)	2006-12-27
EP1737046B1 (de)	2008-08-13

Publication	Publication Date	Title
EP1811362A4 (de)	2011-07-27	Anzeige
DE602005003545D1 (de)	2008-01-10	Plasmaanzeigetafel
EP1855479A4 (de)	2009-10-14	Untertitel-anzeige
DE602006002187D1 (de)	2008-09-25	Lichtemittierende Anzeigentafel
DE602006021103D1 (de)	2011-05-19	Plasmaanzeigetafel
DK1938298T4 (da)	2019-05-20	Visningsindretning
DE602006017646D1 (de)	2010-12-02	Flachbildschirmvorrichtung
EP1916648A4 (de)	2009-05-27	Leucht-display-schirm
DE602006011113D1 (de)	2010-01-28	Plasmaanzeigevorrichtung
DE602006019817D1 (de)	2011-03-10	Plasmaanzeigegerät
DE602006014472D1 (de)	2010-07-08	Plasmaanzeigetafel
DE602006008360D1 (de)	2009-09-24	Plasmaanzeigetafel
DE602006018564D1 (de)	2011-01-13	Plasmaanzeigevorrichtung
DE602006004115D1 (de)	2009-01-22	OLED Anzeigevorrichtung
EP1889245A4 (de)	2010-04-21	Ultradünne alphanumerische anzeige
DE602006012420D1 (de)	2010-04-08	Plasmaanzeigetafel
DE602006008526D1 (de)	2009-10-01	Plasmaanzeigevorrichtung
DE602006019653D1 (de)	2011-03-03	Plasmaanzeigetafel
DE602006012244D1 (de)	2010-04-01	Plasmaanzeigetafel
DE602006012257D1 (de)	2010-04-01	Plasmaanzeigetafel
DE602006011093D1 (de)	2010-01-28	Plasmaanzeigetafel
DE602006014763D1 (de)	2010-07-22	Plasmaanzeigetafel
DE602006017131D1 (de)	2010-11-11	Plasmaanzeigevorrichtung
FR2885923B3 (fr)	2007-05-04	Panneau anti-derapant
ES1057590Y (es)	2004-12-16	Panel publicitario

Legal Events

Date	Code	Title	Description
2009-06-04	8327	Change in the person/name/address of the patent owner	Owner name: SAMSUNG MOBILE DISPLAY CO. LTD., SUWON, GYEONG, KR
2009-09-03	8364	No opposition during term of opposition