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DE602005011111D1 - Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen - Google Patents

Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen

Info

Publication number
DE602005011111D1
DE602005011111D1 DE602005011111T DE602005011111T DE602005011111D1 DE 602005011111 D1 DE602005011111 D1 DE 602005011111D1 DE 602005011111 T DE602005011111 T DE 602005011111T DE 602005011111 T DE602005011111 T DE 602005011111T DE 602005011111 D1 DE602005011111 D1 DE 602005011111D1
Authority
DE
Germany
Prior art keywords
self
production
memory cells
phase change
change memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005011111T
Other languages
English (en)
Inventor
Fabio Pellizzer
Roberto Bez
Enrico Varesi
Agostino Pirovano
Pietro Petruzza
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005011111D1 publication Critical patent/DE602005011111D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE602005011111T 2005-06-03 2005-06-03 Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen Expired - Lifetime DE602005011111D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05104879A EP1729355B1 (de) 2005-06-03 2005-06-03 Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen

Publications (1)

Publication Number Publication Date
DE602005011111D1 true DE602005011111D1 (de) 2009-01-02

Family

ID=34979514

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005011111T Expired - Lifetime DE602005011111D1 (de) 2005-06-03 2005-06-03 Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen

Country Status (3)

Country Link
US (1) US7422926B2 (de)
EP (1) EP1729355B1 (de)
DE (1) DE602005011111D1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
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US7709835B2 (en) 2007-04-03 2010-05-04 Marvell World Trade Ltd. Method to form high efficiency GST cell using a double heater cut
TWI419321B (zh) * 2007-04-03 2013-12-11 Marvell World Trade Ltd 記憶體裝置及其製造方法
WO2008124444A1 (en) * 2007-04-03 2008-10-16 Marvell World Trade Ltd. Methods to form wide heater trenches and to form memory cells to engage heaters
US7745809B1 (en) * 2007-04-03 2010-06-29 Marvell International Ltd. Ultra high density phase change memory having improved emitter contacts, improved GST cell reliability and highly matched UHD GST cells using column mirco-trench strips
US7579616B2 (en) * 2007-04-10 2009-08-25 International Business Machines Corporation Four-terminal programmable via-containing structure and method of fabricating same
US8030128B1 (en) * 2007-04-23 2011-10-04 Marvell International Ltd. Method to form high density phase change memory (PCM) top contact every two bits
US7705424B2 (en) * 2007-05-15 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory
US8158965B2 (en) * 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US7935564B2 (en) 2008-02-25 2011-05-03 International Business Machines Corporation Self-converging bottom electrode ring
CN102119023B (zh) 2008-07-03 2014-04-09 弗吉尼亚大学专利基金会 阿帕地松单位剂量
US7973302B2 (en) * 2008-12-30 2011-07-05 Stmicroelectronics S.R.L. Forming phase change memory cells
US8049197B2 (en) * 2008-12-30 2011-11-01 Stmicroelectronics S.R.L. Self-aligned nano-cross-point phase change memory
KR101510776B1 (ko) * 2009-01-05 2015-04-10 삼성전자주식회사 반도체 상변화 메모리 소자
US20100308296A1 (en) * 2009-06-09 2010-12-09 Agostino Pirovano Phase change memory cell with self-aligned vertical heater
US9246093B2 (en) 2009-07-01 2016-01-26 Micron Technology, Inc. Phase change memory cell with self-aligned vertical heater and low resistivity interface
WO2011064801A1 (en) * 2009-11-30 2011-06-03 Andrea Redaelli Memory including a low thermal budget selector switch on a variable resistance memory cell
KR101819595B1 (ko) 2011-02-28 2018-01-18 삼성전자주식회사 반도체 기억 소자 및 반도체 기억 소자의 형성 방법
US8486743B2 (en) 2011-03-23 2013-07-16 Micron Technology, Inc. Methods of forming memory cells
US8541248B2 (en) * 2011-09-29 2013-09-24 Lexmark International, Inc. Methods for fabricating planar heater structures for ejection devices
US8994489B2 (en) 2011-10-19 2015-03-31 Micron Technology, Inc. Fuses, and methods of forming and using fuses
US9252188B2 (en) 2011-11-17 2016-02-02 Micron Technology, Inc. Methods of forming memory cells
US8546231B2 (en) 2011-11-17 2013-10-01 Micron Technology, Inc. Memory arrays and methods of forming memory cells
US8723155B2 (en) 2011-11-17 2014-05-13 Micron Technology, Inc. Memory cells and integrated devices
US9318699B2 (en) 2012-01-18 2016-04-19 Micron Technology, Inc. Resistive memory cell structures and methods
US9136467B2 (en) 2012-04-30 2015-09-15 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US8765555B2 (en) 2012-04-30 2014-07-01 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US9257197B2 (en) 2012-07-06 2016-02-09 Micron Technology, Inc. Apparatuses and/or methods for operating a memory cell as an anti-fuse
US9553262B2 (en) 2013-02-07 2017-01-24 Micron Technology, Inc. Arrays of memory cells and methods of forming an array of memory cells
US9184377B2 (en) 2013-06-11 2015-11-10 Micron Technology, Inc. Resistance variable memory cell structures and methods
US9112150B2 (en) 2013-07-23 2015-08-18 Micron Technology, Inc. Methods of forming memory cells and arrays
US9881971B2 (en) 2014-04-01 2018-01-30 Micron Technology, Inc. Memory arrays
US9362494B2 (en) 2014-06-02 2016-06-07 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
US9343506B2 (en) 2014-06-04 2016-05-17 Micron Technology, Inc. Memory arrays with polygonal memory cells having specific sidewall orientations
EP3261141A1 (de) 2016-06-24 2017-12-27 STMicroelectronics Srl Phasenwechselspeicherzelle und verfahren zur herstellung der phasenwechselspeicherzelle
FR3056826B1 (fr) 2016-09-28 2019-05-24 Stmicroelectronics (Crolles 2) Sas Cellule memoire a changement de phase
US10803933B2 (en) 2018-08-21 2020-10-13 International Business Machines Corporation Self-aligned high density and size adjustable phase change memory
US10937961B2 (en) 2018-11-06 2021-03-02 International Business Machines Corporation Structure and method to form bi-layer composite phase-change-memory cell
FR3096827A1 (fr) 2019-05-28 2020-12-04 Stmicroelectronics (Crolles 2) Sas Mémoire à changement de phase
US11271151B2 (en) 2019-06-12 2022-03-08 International Business Machines Corporation Phase change memory using multiple phase change layers and multiple heat conductors
CN113285019B (zh) * 2021-04-15 2023-05-02 中国科学院上海硅酸盐研究所 一种基于相变材料的显示存储器
US11800817B2 (en) 2021-06-21 2023-10-24 International Business Machines Corporation Phase change memory cell galvanic corrosion prevention

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6579760B1 (en) 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
DE10236439B3 (de) * 2002-08-08 2004-02-26 Infineon Technologies Ag Speicher-Anordnung, Verfahren zum Betreiben einer Speicher-Anordnung und Verfahren zum Herstellen einer Speicher-Anordnung
EP1439583B1 (de) * 2003-01-15 2013-04-10 STMicroelectronics Srl Sub-lithographische Kontaktstruktur, insbesondere für ein Phasenwechsel-Speicherelement, und deren Herstellungsverfahren
DE60328960D1 (de) * 2003-04-16 2009-10-08 St Microelectronics Srl Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle
US7381611B2 (en) * 2003-08-04 2008-06-03 Intel Corporation Multilayered phase change memory
EP1505656B1 (de) * 2003-08-05 2007-01-03 STMicroelectronics S.r.l. Verfahren zur Herstellung einer Anordnung von Phasenwechselspeichern in Kupfer-Damaszenertechnologie sowie entsprechend hergestellte Anordnungen von Phasenwechselspeichern
JP4350459B2 (ja) * 2003-08-26 2009-10-21 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US8501523B2 (en) * 2004-10-28 2013-08-06 Micron Technology, Inc. Depositing titanium silicon nitride films for forming phase change memories
US20070045606A1 (en) * 2005-08-30 2007-03-01 Michele Magistretti Shaping a phase change layer in a phase change memory cell

Also Published As

Publication number Publication date
US7422926B2 (en) 2008-09-09
EP1729355A1 (de) 2006-12-06
US20070020797A1 (en) 2007-01-25
EP1729355B1 (de) 2008-11-19

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