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DE602005001829D1 - Magnetische Multibit-Direktzugriffspeicheranordnung und deren Schreibverfahren - Google Patents

Magnetische Multibit-Direktzugriffspeicheranordnung und deren Schreibverfahren

Info

Publication number
DE602005001829D1
DE602005001829D1 DE602005001829T DE602005001829T DE602005001829D1 DE 602005001829 D1 DE602005001829 D1 DE 602005001829D1 DE 602005001829 T DE602005001829 T DE 602005001829T DE 602005001829 T DE602005001829 T DE 602005001829T DE 602005001829 D1 DE602005001829 D1 DE 602005001829D1
Authority
DE
Germany
Prior art keywords
memory device
random access
access memory
writing method
bit random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005001829T
Other languages
English (en)
Other versions
DE602005001829T2 (de
Inventor
Chee-Kheng Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040086392A external-priority patent/KR100590563B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005001829D1 publication Critical patent/DE602005001829D1/de
Application granted granted Critical
Publication of DE602005001829T2 publication Critical patent/DE602005001829T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE602005001829T 2004-10-27 2005-10-27 Magnetische Multibit-Direktzugriffspeicheranordnung und deren Schreibverfahren Expired - Lifetime DE602005001829T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2004086392 2004-10-27
KR1020040086392A KR100590563B1 (ko) 2004-10-27 2004-10-27 멀티 비트 자기 메모리 소자와 그 동작 및 제조 방법
US117453 2005-04-29
US11/117,453 US7336528B2 (en) 2004-10-27 2005-04-29 Advanced multi-bit magnetic random access memory device

Publications (2)

Publication Number Publication Date
DE602005001829D1 true DE602005001829D1 (de) 2007-09-13
DE602005001829T2 DE602005001829T2 (de) 2008-04-17

Family

ID=35911172

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005001829T Expired - Lifetime DE602005001829T2 (de) 2004-10-27 2005-10-27 Magnetische Multibit-Direktzugriffspeicheranordnung und deren Schreibverfahren

Country Status (4)

Country Link
US (1) US7567453B2 (de)
EP (1) EP1653475B1 (de)
DE (1) DE602005001829T2 (de)
RU (1) RU2310928C2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7539047B2 (en) 2007-05-08 2009-05-26 Honeywell International, Inc. MRAM cell with multiple storage elements
US7995378B2 (en) * 2007-12-19 2011-08-09 Qualcomm Incorporated MRAM device with shared source line
US8004881B2 (en) * 2007-12-19 2011-08-23 Qualcomm Incorporated Magnetic tunnel junction device with separate read and write paths
US7936596B2 (en) * 2008-02-01 2011-05-03 Qualcomm Incorporated Magnetic tunnel junction cell including multiple magnetic domains
US7781231B2 (en) 2008-03-07 2010-08-24 Qualcomm Incorporated Method of forming a magnetic tunnel junction device
US8159870B2 (en) 2008-04-04 2012-04-17 Qualcomm Incorporated Array structural design of magnetoresistive random access memory (MRAM) bit cells
US8334147B2 (en) * 2009-05-26 2012-12-18 Magic Technologies, Inc. Bio-sensor with hard-direction field
US20100302838A1 (en) * 2009-05-26 2010-12-02 Magic Technologies, Inc. Read disturb-free SMT reference cell scheme
US8331126B2 (en) * 2010-06-28 2012-12-11 Qualcomm Incorporated Non-volatile memory with split write and read bitlines
US8399941B2 (en) * 2010-11-05 2013-03-19 Grandis, Inc. Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
EP2546836A1 (de) * 2011-07-12 2013-01-16 Crocus Technology S.A. Magnetische Direktzugriffsspeicherzelle mit verbesserter Verteilung des Schaltfelds
EP2575136B1 (de) * 2011-09-30 2014-12-24 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle mit ferromagnetischen Schichten
EP2605246B1 (de) * 2011-12-12 2015-02-11 Crocus Technology S.A. Selbstbezogenes Magnetdirektzugriffsspeicherelement mit einer synthetischen Speicherschicht
KR101753648B1 (ko) * 2012-03-29 2017-07-04 인텔 코포레이션 자기 상태 엘리먼트 및 회로
WO2014022304A1 (en) * 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
JP2020047703A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 磁気記憶装置
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11177010B1 (en) 2020-07-13 2021-11-16 Qualcomm Incorporated Bitcell for data redundancy

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2063070C1 (ru) * 1993-11-02 1996-06-27 Самвел Оганесович Варданян Способ магнитной записи и воспроизведения информации
US5703805A (en) 1996-05-08 1997-12-30 Motorola Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses
US5930164A (en) 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US6005800A (en) * 1998-11-23 1999-12-21 International Business Machines Corporation Magnetic memory array with paired asymmetric memory cells for improved write margin
KR100466729B1 (ko) * 1999-06-10 2005-01-24 인터내셔널 비지네스 머신즈 코포레이션 자화 반전 실행 방법 및 장치, 그리고 자기 기록 시스템
JP3593652B2 (ja) * 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6590806B1 (en) 2000-03-09 2003-07-08 Hewlett-Packard Development Company, L.P. Multibit magnetic memory element
JP3800925B2 (ja) 2000-05-15 2006-07-26 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP4818519B2 (ja) 2001-02-06 2011-11-16 ルネサスエレクトロニクス株式会社 磁気記憶装置
CN1270323C (zh) * 2001-06-19 2006-08-16 松下电器产业株式会社 磁性存储器的驱动方法
US6927995B2 (en) 2001-08-09 2005-08-09 Hewlett-Packard Development Company, L.P. Multi-bit MRAM device with switching nucleation sites
JP3866567B2 (ja) 2001-12-13 2007-01-10 株式会社東芝 半導体記憶装置及びその製造方法
US6740947B1 (en) 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor
US6836429B2 (en) 2002-12-07 2004-12-28 Hewlett-Packard Development Company, L.P. MRAM having two write conductors
US6944053B2 (en) 2003-06-17 2005-09-13 Hewlett-Packard Development Company, L.P. Magnetic memory with structure providing reduced coercivity
JP3673268B1 (ja) * 2004-02-05 2005-07-20 シャープ株式会社 ジッタ補正装置
US7203129B2 (en) 2004-02-16 2007-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Segmented MRAM memory array
US7502248B2 (en) * 2004-05-21 2009-03-10 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP5096690B2 (ja) * 2006-04-26 2012-12-12 株式会社日立製作所 磁気メモリセル及びランダムアクセスメモリ

Also Published As

Publication number Publication date
EP1653475B1 (de) 2007-08-01
RU2310928C2 (ru) 2007-11-20
US20080106933A1 (en) 2008-05-08
EP1653475A1 (de) 2006-05-03
US7567453B2 (en) 2009-07-28
DE602005001829T2 (de) 2008-04-17
RU2005133003A (ru) 2007-05-10

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