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DE602004007231D1 - Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren - Google Patents

Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren

Info

Publication number
DE602004007231D1
DE602004007231D1 DE602004007231T DE602004007231T DE602004007231D1 DE 602004007231 D1 DE602004007231 D1 DE 602004007231D1 DE 602004007231 T DE602004007231 T DE 602004007231T DE 602004007231 T DE602004007231 T DE 602004007231T DE 602004007231 D1 DE602004007231 D1 DE 602004007231D1
Authority
DE
Germany
Prior art keywords
detecting
manufacturing
optical
optical signal
optical device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004007231T
Other languages
English (en)
Other versions
DE602004007231T2 (de
Inventor
Seong-Mo Hwang
Young-Hun Kim
Seung-Ho Nam
Young-Chan Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004007231D1 publication Critical patent/DE602004007231D1/de
Application granted granted Critical
Publication of DE602004007231T2 publication Critical patent/DE602004007231T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
DE602004007231T 2003-12-17 2004-12-17 Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren Expired - Fee Related DE602004007231T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2003092504 2003-12-17
KR1020030092504A KR100624415B1 (ko) 2003-12-17 2003-12-17 광디바이스 및 그 제조방법

Publications (2)

Publication Number Publication Date
DE602004007231D1 true DE602004007231D1 (de) 2007-08-09
DE602004007231T2 DE602004007231T2 (de) 2007-10-11

Family

ID=34545882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004007231T Expired - Fee Related DE602004007231T2 (de) 2003-12-17 2004-12-17 Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren

Country Status (5)

Country Link
US (1) US7233718B2 (de)
EP (1) EP1548474B1 (de)
JP (1) JP4117285B2 (de)
KR (1) KR100624415B1 (de)
DE (1) DE602004007231T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005040558A1 (de) * 2005-08-26 2007-03-01 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
JP2008096484A (ja) 2006-10-06 2008-04-24 Sony Corp 光半導体装置
US8538223B2 (en) * 2007-11-30 2013-09-17 3M Innovative Properties Company Method for making optical waveguides
US9111764B2 (en) 2012-07-13 2015-08-18 Infineon Technologies Ag Integrated semiconductor device and a bridge circuit with the integrated semiconductor device
FR3065323B1 (fr) * 2017-04-13 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode
US10571629B1 (en) * 2018-08-17 2020-02-25 University Of Southampton Waveguide for an integrated photonic device
US10914892B2 (en) * 2018-10-18 2021-02-09 Cisco Technology, Inc. Germanium photodetector coupled to a waveguide
JP7275843B2 (ja) * 2019-05-17 2023-05-18 富士通オプティカルコンポーネンツ株式会社 光半導体素子
JP7144011B2 (ja) * 2019-07-25 2022-09-29 株式会社Sumco 光モジュールの製造方法及び光モジュール
US11199672B1 (en) * 2020-06-15 2021-12-14 Globalfoundries U.S. Inc. Multiple waveguide coupling to one or more photodetectors
WO2026018113A1 (en) * 2024-07-17 2026-01-22 Fondazione Bruno Kessler Planar photonic integrated circuit with single photon photodetector and method for the realization of an planar photonic integrated circuit

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229867A (ja) 1987-03-11 1988-09-26 ハネウエル・インコーポレーテツド チヤネル導波路形シヨツトキ・フオトダイオード
US5178728A (en) * 1991-03-28 1993-01-12 Texas Instruments Incorporated Integrated-optic waveguide devices and method
FR2676126B1 (fr) * 1991-04-30 1993-07-23 France Telecom Dispositif optoelectronique a guide optique et photodetecteur integres.
JP2865000B2 (ja) * 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
US5682455A (en) * 1996-02-29 1997-10-28 Northern Telecom Limited Semiconductor optical waveguide
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3558479B2 (ja) 1997-03-17 2004-08-25 シャープ株式会社 導波光検出器及びその製造方法
DE19714054A1 (de) * 1997-04-05 1998-10-08 Daimler Benz Ag SiGe-Photodetektor mit hohem Wirkungsgrad
US6166372A (en) * 1997-05-27 2000-12-26 Sharp Kabushiki Kaisha Polarization detection device and method for producing the same
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
JP2000298218A (ja) 1999-04-13 2000-10-24 Hitachi Ltd 光インターコネクト装置およびその製造方法
US6437375B1 (en) * 2000-06-05 2002-08-20 Micron Technology, Inc. PD-SOI substrate with suppressed floating body effect and method for its fabrication
US6677655B2 (en) * 2000-08-04 2004-01-13 Amberwave Systems Corporation Silicon wafer with embedded optoelectronic material for monolithic OEIC
US6498873B1 (en) * 2000-08-31 2002-12-24 Agere Systems Inc. Photo detector assembly
US6559471B2 (en) * 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
JP2002374042A (ja) * 2000-12-12 2002-12-26 Fuji Photo Film Co Ltd 半導体レーザ素子
US7095938B2 (en) * 2001-03-27 2006-08-22 Metrophotonics Inc. Vertical integration of active devices within passive semiconductor waveguides
WO2002086976A1 (en) * 2001-04-18 2002-10-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6723622B2 (en) * 2002-02-21 2004-04-20 Intel Corporation Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer

Also Published As

Publication number Publication date
KR100624415B1 (ko) 2006-09-18
KR20050060784A (ko) 2005-06-22
EP1548474B1 (de) 2007-06-27
JP2005182030A (ja) 2005-07-07
US7233718B2 (en) 2007-06-19
EP1548474A1 (de) 2005-06-29
JP4117285B2 (ja) 2008-07-16
US20050169593A1 (en) 2005-08-04
DE602004007231T2 (de) 2007-10-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee