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DE60135956D1 - Zerstäubungsvorrichtung - Google Patents

Zerstäubungsvorrichtung

Info

Publication number
DE60135956D1
DE60135956D1 DE60135956T DE60135956T DE60135956D1 DE 60135956 D1 DE60135956 D1 DE 60135956D1 DE 60135956 T DE60135956 T DE 60135956T DE 60135956 T DE60135956 T DE 60135956T DE 60135956 D1 DE60135956 D1 DE 60135956D1
Authority
DE
Germany
Prior art keywords
atomizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135956T
Other languages
English (en)
Inventor
Noriaki Tani
Kazuhiko Saito
Koukou Suu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE60135956D1 publication Critical patent/DE60135956D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/088Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE60135956T 2000-07-25 2001-07-25 Zerstäubungsvorrichtung Expired - Lifetime DE60135956D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000223195A JP4717186B2 (ja) 2000-07-25 2000-07-25 スパッタリング装置

Publications (1)

Publication Number Publication Date
DE60135956D1 true DE60135956D1 (de) 2008-11-13

Family

ID=18717326

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135956T Expired - Lifetime DE60135956D1 (de) 2000-07-25 2001-07-25 Zerstäubungsvorrichtung

Country Status (7)

Country Link
US (1) US6521105B2 (de)
EP (1) EP1176625B1 (de)
JP (1) JP4717186B2 (de)
KR (1) KR100414755B1 (de)
CN (1) CN1172021C (de)
DE (1) DE60135956D1 (de)
TW (1) TW574401B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
US7001491B2 (en) * 2003-06-26 2006-02-21 Tokyo Electron Limited Vacuum-processing chamber-shield and multi-chamber pumping method
KR100629073B1 (ko) 2004-12-29 2006-09-26 엘지전자 주식회사 조립식 방착판
KR100918605B1 (ko) * 2005-07-19 2009-09-25 가부시키가이샤 알박 스퍼터링 장치 및 투명 도전막의 제조 방법
JP2007051337A (ja) * 2005-08-18 2007-03-01 Ulvac Japan Ltd スパッタ電極及びスパッタ電極を備えたスパッタリング装置
JP4715736B2 (ja) * 2006-05-31 2011-07-06 パナソニック株式会社 スパッタリング装置
JP4720625B2 (ja) * 2006-06-05 2011-07-13 パナソニック株式会社 スパッタリング装置
JP5080219B2 (ja) * 2007-11-28 2012-11-21 株式会社アルバック 薄膜形成装置、半導体装置の製造装置、及び薄膜形成方法
JP5135106B2 (ja) * 2008-07-31 2013-01-30 富士フイルム株式会社 成膜装置および成膜方法、並びに、液体吐出装置
WO2010073207A1 (en) 2008-12-23 2010-07-01 Oc Oerlikon Balzers Ag Rf sputtering arrangement
JP2012193410A (ja) * 2011-03-16 2012-10-11 Japan Steel Works Ltd:The スパッタ装置
JP2013020737A (ja) * 2011-07-08 2013-01-31 Nissin Ion Equipment Co Ltd 防着板支持部材およびこれを備えたイオン源
CN103291586B (zh) * 2013-06-19 2016-03-30 储继国 真空炉抽气系统及其抽气工艺
WO2017018077A1 (ja) * 2015-07-24 2017-02-02 株式会社ユーテック スパッタリング装置、膜の製造方法、SrRuO3-σ膜、強誘電体セラミックス及びその製造方法
JP7114368B2 (ja) * 2018-06-29 2022-08-08 株式会社アルバック スパッタリング装置
JP7102323B2 (ja) * 2018-11-19 2022-07-19 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP7326106B2 (ja) * 2019-10-16 2023-08-15 株式会社アルバック スパッタリング装置
CN116937194A (zh) * 2023-09-18 2023-10-24 上海陛通半导体能源科技股份有限公司 接地端子底座及包含其的磁控溅射电介质薄膜沉积装置
CN116979282A (zh) * 2023-09-22 2023-10-31 上海陛通半导体能源科技股份有限公司 接地端子底座及包含其的磁控溅射装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
JPH0624186B2 (ja) * 1985-09-27 1994-03-30 株式会社日立製作所 ドライエツチング装置
JPH0676657B2 (ja) * 1986-11-10 1994-09-28 日電アネルバ株式会社 スパツタリング装置
JPS644481A (en) * 1987-06-24 1989-01-09 Minoru Sugawara Parallel-plate discharge electrode
JPH0448073A (ja) * 1990-06-14 1992-02-18 Matsushita Electric Ind Co Ltd スパッタリング装置
US6296743B1 (en) * 1993-04-02 2001-10-02 Applied Materials, Inc. Apparatus for DC reactive plasma vapor deposition of an electrically insulating material using a shielded secondary anode
JPH08277461A (ja) * 1995-04-06 1996-10-22 Ulvac Japan Ltd スパッタリング装置および誘電体膜の成膜方法
JPH09176850A (ja) * 1995-12-22 1997-07-08 Ulvac Japan Ltd スパッタリング装置、及び誘電体膜製造方法
JP3040073B2 (ja) * 1996-06-18 2000-05-08 株式会社日立製作所 プラズマ処理装置
US5736021A (en) * 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
JP3460506B2 (ja) * 1996-11-01 2003-10-27 三菱マテリアル株式会社 高誘電体膜形成用スパッタリングターゲット
KR20000069523A (ko) * 1997-01-16 2000-11-25 보텀필드 레인, 에프. 기상 증착 요소 및 기상 증착 방법
JPH111768A (ja) * 1997-06-11 1999-01-06 Hitachi Metals Ltd 強誘電体薄膜用ターゲット、その製造方法および強誘電体薄膜
JP4017220B2 (ja) * 1997-10-01 2007-12-05 日鉱金属株式会社 スパッタリング用BaxSr1−xTiO3−yターゲット材
JP3126698B2 (ja) * 1998-06-02 2001-01-22 富士通株式会社 スパッタ成膜方法、スパッタ成膜装置及び半導体装置の製造方法
JP2000067432A (ja) * 1998-08-24 2000-03-03 Asahi Komagu Kk スパッタリング装置

Also Published As

Publication number Publication date
CN1340634A (zh) 2002-03-20
KR20020009516A (ko) 2002-02-01
US6521105B2 (en) 2003-02-18
CN1172021C (zh) 2004-10-20
TW574401B (en) 2004-02-01
KR100414755B1 (ko) 2004-01-13
EP1176625A3 (de) 2005-11-23
EP1176625B1 (de) 2008-10-01
JP2002038263A (ja) 2002-02-06
JP4717186B2 (ja) 2011-07-06
US20020043457A1 (en) 2002-04-18
EP1176625A2 (de) 2002-01-30

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Legal Events

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8364 No opposition during term of opposition