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DE60124473D1 - Ätzflüssigkeitszusammensetzung - Google Patents

Ätzflüssigkeitszusammensetzung

Info

Publication number
DE60124473D1
DE60124473D1 DE60124473T DE60124473T DE60124473D1 DE 60124473 D1 DE60124473 D1 DE 60124473D1 DE 60124473 T DE60124473 T DE 60124473T DE 60124473 T DE60124473 T DE 60124473T DE 60124473 D1 DE60124473 D1 DE 60124473D1
Authority
DE
Germany
Prior art keywords
etching liquid
etching
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60124473T
Other languages
English (en)
Other versions
DE60124473T2 (de
Inventor
Norio Ishikawa
Kiyoto Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
Original Assignee
Kanto Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc filed Critical Kanto Chemical Co Inc
Application granted granted Critical
Publication of DE60124473D1 publication Critical patent/DE60124473D1/de
Publication of DE60124473T2 publication Critical patent/DE60124473T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H10P50/667—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • ing And Chemical Polishing (AREA)
DE60124473T 2000-09-08 2001-09-05 Ätzflüssigkeitszusammensetzung Expired - Lifetime DE60124473T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000272528 2000-09-08
JP2000272528 2000-09-08

Publications (2)

Publication Number Publication Date
DE60124473D1 true DE60124473D1 (de) 2006-12-28
DE60124473T2 DE60124473T2 (de) 2007-09-06

Family

ID=18758628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60124473T Expired - Lifetime DE60124473T2 (de) 2000-09-08 2001-09-05 Ätzflüssigkeitszusammensetzung

Country Status (7)

Country Link
US (2) US6914039B2 (de)
EP (2) EP1646091A3 (de)
KR (1) KR100821884B1 (de)
CN (1) CN1253527C (de)
DE (1) DE60124473T2 (de)
SG (1) SG89419A1 (de)
TW (1) TWI252261B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1646091A3 (de) * 2000-09-08 2006-04-19 Kanto Kagaku Kabushiki Kaisha Ätzflüssigkeitszusammensetzung
US6943142B2 (en) * 2002-01-09 2005-09-13 Air Products And Chemicals, Inc. Aqueous stripping and cleaning composition
TWI339680B (en) 2002-02-19 2011-04-01 Kanto Kagaku Washing liquid composition for semiconductor substrate
KR100519368B1 (ko) * 2002-03-29 2005-10-07 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
JP4375991B2 (ja) * 2003-04-09 2009-12-02 関東化学株式会社 半導体基板洗浄液組成物
JP4085094B2 (ja) * 2004-02-19 2008-04-30 シャープ株式会社 導電素子基板の製造方法、液晶表示装置の製造方法
TWI364072B (en) * 2004-03-18 2012-05-11 Dongjin Semichem Co Ltd Etching composition
KR101232249B1 (ko) * 2004-08-10 2013-02-12 간또 가가꾸 가부시끼가이샤 반도체 기판 세정액 및 반도체 기판 세정방법
KR101167312B1 (ko) * 2005-06-30 2012-07-19 엘지디스플레이 주식회사 미세 패턴 형성 방법과 그를 이용한 액정 표시 장치 및 그제조 방법
DE102005031469A1 (de) * 2005-07-04 2007-01-11 Merck Patent Gmbh Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
JP4816250B2 (ja) 2006-05-25 2011-11-16 三菱瓦斯化学株式会社 エッチング液組成物及びエッチング方法
JP5642967B2 (ja) * 2007-11-22 2014-12-17 関東化学株式会社 エッチング液組成物
KR20100101136A (ko) * 2008-01-15 2010-09-16 미쓰비시 세이시 가부시키가이샤 구리 또는 구리 합금용의 에칭액, 에칭 전처리액 및 에칭 방법
JP5354989B2 (ja) * 2008-08-14 2013-11-27 関東化学株式会社 透明導電膜用エッチング液組成物
WO2012043767A1 (ja) * 2010-10-01 2012-04-05 三菱化学株式会社 半導体デバイス用基板の洗浄液及び洗浄方法
JP6261926B2 (ja) * 2013-09-18 2018-01-17 関東化學株式会社 金属酸化物エッチング液組成物およびエッチング方法
CN104587936B (zh) * 2015-01-30 2017-03-22 东莞佰鸿电子有限公司 一种光化学反应系统
JP7682656B2 (ja) * 2021-03-19 2025-05-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
CN117467442A (zh) * 2022-07-21 2024-01-30 三福化工股份有限公司 蚀刻液组成物及其蚀刻方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
US4344863A (en) * 1978-08-04 1982-08-17 Exxon Research & Engineering Co. Process for defoaming acid gas scrubbing solutions and defoaming solutions
US4532066A (en) * 1984-03-05 1985-07-30 Sterling Drug Inc. Stable mildly acidic aqueous polishing cleanser and preparation thereof
JPS63114132A (ja) * 1986-10-31 1988-05-19 Showa Denko Kk 表面処理液
JPH04338643A (ja) * 1991-05-16 1992-11-25 Seiko Epson Corp シリコンウェハーの加工方法
US5264109A (en) * 1991-09-16 1993-11-23 Siemens Power Corporation Zirconium and zirconium alloy passivation process
JP3289734B2 (ja) * 1992-05-13 2002-06-10 エルナー株式会社 電解コンデンサ用アルミニウム箔のエッチング方法
WO1994018696A1 (fr) * 1993-02-04 1994-08-18 Daikin Industries, Ltd. Composition pour gravure a procede humide de semi-conducteurs presantant une excellente mouillabilite
JPH07141932A (ja) * 1993-11-18 1995-06-02 Kanto Chem Co Inc 透明導電膜のエッチング液組成物
US5489735A (en) * 1994-01-24 1996-02-06 D'muhala; Thomas F. Decontamination composition for removing norms and method utilizing the same
JPH09208267A (ja) * 1996-02-02 1997-08-12 Nippon Sheet Glass Co Ltd 透明導電膜の電極加工方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
US6284721B1 (en) * 1997-01-21 2001-09-04 Ki Won Lee Cleaning and etching compositions
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
JPH1129882A (ja) 1997-07-08 1999-02-02 Kanto Bussan Kk 基材のエッチング方法及びそれに用いる酸性インク
WO2000011107A1 (en) 1998-08-18 2000-03-02 Ki Won Lee Ito etching composition
SG78405A1 (en) * 1998-11-17 2001-02-20 Fujimi Inc Polishing composition and rinsing composition
JP4230631B2 (ja) * 1999-12-20 2009-02-25 東芝電子エンジニアリング株式会社 透明導電膜のエッチング液組成物
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
EP1646091A3 (de) * 2000-09-08 2006-04-19 Kanto Kagaku Kabushiki Kaisha Ätzflüssigkeitszusammensetzung

Also Published As

Publication number Publication date
US20020055447A1 (en) 2002-05-09
EP1646091A2 (de) 2006-04-12
SG89419A1 (en) 2002-06-18
EP1187225A2 (de) 2002-03-13
KR20020020654A (ko) 2002-03-15
TWI252261B (en) 2006-04-01
US20050209119A1 (en) 2005-09-22
EP1187225B1 (de) 2006-11-15
DE60124473T2 (de) 2007-09-06
CN1253527C (zh) 2006-04-26
US6914039B2 (en) 2005-07-05
EP1646091A3 (de) 2006-04-19
EP1187225A3 (de) 2003-07-23
US7507350B2 (en) 2009-03-24
KR100821884B1 (ko) 2008-04-16
CN1346864A (zh) 2002-05-01

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: MORI, KIYOTO, SOKA, SAITAMA, JP

Inventor name: ISHIKAWA, NORIO, SOKA, SAITAMA, JP

8364 No opposition during term of opposition