[go: up one dir, main page]

DE60123185D1 - Semiconductor laser device with lower threshold current - Google Patents

Semiconductor laser device with lower threshold current

Info

Publication number
DE60123185D1
DE60123185D1 DE60123185T DE60123185T DE60123185D1 DE 60123185 D1 DE60123185 D1 DE 60123185D1 DE 60123185 T DE60123185 T DE 60123185T DE 60123185 T DE60123185 T DE 60123185T DE 60123185 D1 DE60123185 D1 DE 60123185D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
lower threshold
threshold current
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60123185T
Other languages
German (de)
Other versions
DE60123185T2 (en
Inventor
Hitoshi Shimizu
Koji Kumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of DE60123185D1 publication Critical patent/DE60123185D1/en
Application granted granted Critical
Publication of DE60123185T2 publication Critical patent/DE60123185T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60123185T 2000-07-31 2001-07-30 Semiconductor laser device with lower threshold current Expired - Lifetime DE60123185T2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000230553 2000-07-31
JP2000230553 2000-07-31
JP2001124300 2001-04-23
JP2001124300A JP3735047B2 (en) 2000-07-31 2001-04-23 Semiconductor laser device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
DE60123185D1 true DE60123185D1 (en) 2006-11-02
DE60123185T2 DE60123185T2 (en) 2007-10-11

Family

ID=26597005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60123185T Expired - Lifetime DE60123185T2 (en) 2000-07-31 2001-07-30 Semiconductor laser device with lower threshold current

Country Status (5)

Country Link
US (2) US6912236B2 (en)
EP (1) EP1182756B1 (en)
JP (1) JP3735047B2 (en)
CA (1) CA2354420A1 (en)
DE (1) DE60123185T2 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7058112B2 (en) * 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
JP2003017812A (en) * 2001-04-25 2003-01-17 Furukawa Electric Co Ltd:The Semiconductor laser device
US6813295B2 (en) * 2002-03-25 2004-11-02 Agilent Technologies, Inc. Asymmetric InGaAsN vertical cavity surface emitting lasers
JP4025227B2 (en) * 2002-03-29 2007-12-19 株式会社東芝 Semiconductor laminated substrate and optical semiconductor element
US7656924B2 (en) 2002-04-05 2010-02-02 The Furukawa Electric Co., Ltd. Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
JP3966067B2 (en) * 2002-04-26 2007-08-29 富士ゼロックス株式会社 Surface emitting semiconductor laser device and method for manufacturing the same
JP4615179B2 (en) * 2002-06-27 2011-01-19 古河電気工業株式会社 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
JP2004063969A (en) * 2002-07-31 2004-02-26 Victor Co Of Japan Ltd Surface-emitting laser
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
DE10331586B4 (en) * 2003-07-09 2006-08-31 Universität Kassel Microlaser device and method for its production
GB2407700A (en) * 2003-10-28 2005-05-04 Sharp Kk MBE growth of nitride semiconductor lasers
JP4579526B2 (en) * 2003-11-10 2010-11-10 古河電気工業株式会社 Surface emitting laser
WO2005086243A1 (en) * 2004-03-08 2005-09-15 Showa Denko K.K. Pn junction type croup iii nitride semiconductor light-emitting device
JP4639649B2 (en) * 2004-03-26 2011-02-23 住友電気工業株式会社 Method for growing III-V compound semiconductor layer, epitaxial wafer, and semiconductor device
JP4643184B2 (en) * 2004-06-29 2011-03-02 シャープ株式会社 Semiconductor device, system, and method of manufacturing semiconductor device
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101432936B (en) * 2004-10-01 2011-02-02 菲尼萨公司 Vertical cavity surface emitting laser having multiple top-side contacts
US7720323B2 (en) * 2004-12-20 2010-05-18 Schlumberger Technology Corporation High-temperature downhole devices
JP4575173B2 (en) * 2005-01-07 2010-11-04 日本電信電話株式会社 Manufacturing method of quantum well structure
JP4662345B2 (en) * 2005-03-28 2011-03-30 日本電信電話株式会社 Multiple strain quantum well structure and manufacturing method thereof
JP2007251089A (en) * 2006-03-20 2007-09-27 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor multilayer structure and manufacturing method of semiconductor quantum dot structure
JP5397929B2 (en) * 2008-01-22 2014-01-22 独立行政法人情報通信研究機構 Semiconductor optical device, semiconductor device for optical communication, and manufacturing method thereof
JP5274038B2 (en) * 2008-02-06 2013-08-28 キヤノン株式会社 Manufacturing method of vertical cavity surface emitting laser and manufacturing method of laser array
JP4963301B2 (en) * 2008-05-15 2012-06-27 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
JP2012156562A (en) * 2012-05-21 2012-08-16 Nec Corp Surface emitting laser
US10043941B1 (en) 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
CN110600996B (en) * 2019-09-26 2024-05-14 苏州矩阵光电有限公司 A quantum well layer structure, semiconductor laser and preparation method
US20210194216A1 (en) * 2019-12-24 2021-06-24 Array Photonics, Inc. Stacked semiconductor lasers with controlled spectral emission

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383211A (en) * 1993-11-02 1995-01-17 Xerox Corporation TM-polarized laser emitter using III-V alloy with nitrogen
US5689123A (en) 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5451552A (en) * 1994-05-13 1995-09-19 Hughes Aircraft Company Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices
US5825796A (en) 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
US5719895A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having short period superlattices
US5719894A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
JP3854693B2 (en) * 1996-09-30 2006-12-06 キヤノン株式会社 Manufacturing method of semiconductor laser
US6330263B1 (en) * 1998-05-06 2001-12-11 Sarnoff Corporation Laser diode having separated, highly-strained quantum wells
US6566688B1 (en) * 1998-12-03 2003-05-20 Arizona Board Of Regents Compound semiconductor structures for optoelectronic devices
US6603784B1 (en) 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells
US7095770B2 (en) * 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
US6859474B1 (en) * 1999-11-01 2005-02-22 Arizona Board Of Regents Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system
EP1228557A2 (en) 1999-11-01 2002-08-07 Arizona Board of Regents Long wavelength pseudomorphic inganpassb type-i and type-ii active layers for the gas material system
US20020075920A1 (en) * 2000-12-15 2002-06-20 Sylvia Spruytte Laser diode device with nitrogen incorporating barrier

Also Published As

Publication number Publication date
EP1182756A2 (en) 2002-02-27
US20020034203A1 (en) 2002-03-21
DE60123185T2 (en) 2007-10-11
US20050180485A1 (en) 2005-08-18
EP1182756A3 (en) 2003-07-16
JP3735047B2 (en) 2006-01-11
JP2002118329A (en) 2002-04-19
EP1182756B1 (en) 2006-09-20
CA2354420A1 (en) 2002-01-31
US6912236B2 (en) 2005-06-28

Similar Documents

Publication Publication Date Title
DE60123185D1 (en) Semiconductor laser device with lower threshold current
DE60143340D1 (en) Integrated semiconductor circuit with reduced leakage current
DE60009322D1 (en) Output buffer with constant switching current
DE60128025D1 (en) Semiconductor device with SOI structure
DE60129991D1 (en) SEMICONDUCTOR LASER ELEMENT
DE60136415D1 (en) Power semiconductor switching element
DE60042800D1 (en) Communication device with VPN enabling function
DE60100723D1 (en) Integrated semiconductor circuit with low power consumption
DE60109312D1 (en) MELKING DEVICE WITH CLEANING AGENTS
DE60101190D1 (en) laser device
DE60143193D1 (en) SCANNING DEVICE WITH OPTIMIZED SCANNING RATE
DE60000648D1 (en) Semiconductor memory device with high-speed line switching
DE60105951D1 (en) emitting device
DE60140691D1 (en) SEMICONDUCTOR DIODES COMPONENT
DE50111864D1 (en) BUNDLAGER WITH CENTERING DEVICE
DE60113889D1 (en) Projection device with cooling device
DE60142141D1 (en) Semiconductor device
DE50101940D1 (en) LASER DEVICE
DE69920653D1 (en) SEMICONDUCTOR LASER DEVICE
DE60134911D1 (en) Semiconductor laser with distributed feedback
DE10191585B8 (en) Semiconductor device
DE60138678D1 (en) Integrated gasiolated switching device
DE60133851D1 (en) Power semiconductor component with protection circuit
DE60031595D1 (en) Low-power adjustable threshold circuit
DE60227040D1 (en) Semiconductor device with improved ESD withstand voltage

Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition