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DE60114383D1 - Verfahren und vorrichtung zur plasmabeschichtung - Google Patents

Verfahren und vorrichtung zur plasmabeschichtung

Info

Publication number
DE60114383D1
DE60114383D1 DE60114383T DE60114383T DE60114383D1 DE 60114383 D1 DE60114383 D1 DE 60114383D1 DE 60114383 T DE60114383 T DE 60114383T DE 60114383 T DE60114383 T DE 60114383T DE 60114383 D1 DE60114383 D1 DE 60114383D1
Authority
DE
Germany
Prior art keywords
plasma coating
plasma
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60114383T
Other languages
English (en)
Other versions
DE60114383T2 (de
Inventor
Takashi Akahori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60114383D1 publication Critical patent/DE60114383D1/de
Publication of DE60114383T2 publication Critical patent/DE60114383T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H10P14/6924—
    • H10P14/6927—
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/69215—
    • H10P14/6922—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60114383T 2000-03-17 2001-03-16 Verfahren und vorrichtung zur plasmabeschichtung Expired - Fee Related DE60114383T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000077049 2000-03-17
JP2000077049A JP2001267310A (ja) 2000-03-17 2000-03-17 プラズマ成膜方法及びその装置
PCT/JP2001/002135 WO2001069642A2 (en) 2000-03-17 2001-03-16 Plasma deposition method and system

Publications (2)

Publication Number Publication Date
DE60114383D1 true DE60114383D1 (de) 2005-12-01
DE60114383T2 DE60114383T2 (de) 2006-07-27

Family

ID=18594688

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60114383T Expired - Fee Related DE60114383T2 (de) 2000-03-17 2001-03-16 Verfahren und vorrichtung zur plasmabeschichtung

Country Status (7)

Country Link
US (1) US6767829B2 (de)
EP (1) EP1264329B1 (de)
JP (1) JP2001267310A (de)
KR (1) KR100727205B1 (de)
DE (1) DE60114383T2 (de)
TW (1) TW504772B (de)
WO (1) WO2001069642A2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3532830B2 (ja) 2000-05-24 2004-05-31 キヤノン販売株式会社 半導体装置及びその製造方法
JP3934343B2 (ja) * 2000-07-12 2007-06-20 キヤノンマーケティングジャパン株式会社 半導体装置及びその製造方法
JP3836032B2 (ja) 2002-02-01 2006-10-18 三菱重工業株式会社 プラズマｃｖｄ装置
JP3504940B2 (ja) 2002-05-17 2004-03-08 沖電気工業株式会社 半導体装置の製造方法
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US6939796B2 (en) * 2003-03-14 2005-09-06 Lam Research Corporation System, method and apparatus for improved global dual-damascene planarization
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
NL1025096C2 (nl) * 2003-12-21 2005-06-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten.
US7276135B2 (en) * 2004-05-28 2007-10-02 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage
JP4593381B2 (ja) * 2005-06-20 2010-12-08 東京エレクトロン株式会社 上部電極、プラズマ処理装置およびプラズマ処理方法
US20080175694A1 (en) * 2007-01-19 2008-07-24 Dong-Seok Park Unit and method for transferring substrates and apparatus and method for treating substrates with the unit
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
US7968378B2 (en) * 2008-02-06 2011-06-28 Infineon Technologies Ag Electronic device
JP5357710B2 (ja) * 2009-11-16 2013-12-04 東京エレクトロン株式会社 基板処理方法，基板処理装置，プログラムを記録した記録媒体
JP2022044209A (ja) 2020-09-07 2022-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2022057423A (ja) 2020-09-30 2022-04-11 東京エレクトロン株式会社 プラズマ処理装置
KR102736450B1 (ko) * 2022-03-25 2024-11-28 한국핵융합에너지연구원 링형 전극을 구비하는 마이크로웨이브 다이아몬드 성막 장치
CN115116861B (zh) * 2022-06-22 2025-11-14 闽南师范大学 半导体晶片表面键合加工用等离子体真空热压键合机

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2774367B2 (ja) 1990-08-07 1998-07-09 忠弘 大見 プラズマプロセス用装置および方法
KR100226366B1 (ko) * 1995-08-23 1999-10-15 아끼구사 나오유끼 플라즈마장치 및 플라즈마 처리방법
US6001728A (en) * 1996-03-15 1999-12-14 Applied Materials, Inc. Method and apparatus for improving film stability of halogen-doped silicon oxide films
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
US5661093A (en) * 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US6136685A (en) * 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6514880B2 (en) * 1998-02-05 2003-02-04 Asm Japan K.K. Siloxan polymer film on semiconductor substrate and method for forming same
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
JP2001057359A (ja) * 1999-08-17 2001-02-27 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JP2001267310A (ja) 2001-09-28
US6767829B2 (en) 2004-07-27
KR20020086642A (ko) 2002-11-18
WO2001069642A3 (en) 2002-06-20
WO2001069642A2 (en) 2001-09-20
TW504772B (en) 2002-10-01
EP1264329B1 (de) 2005-10-26
US20030129851A1 (en) 2003-07-10
DE60114383T2 (de) 2006-07-27
EP1264329A2 (de) 2002-12-11
KR100727205B1 (ko) 2007-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee