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DE60112726T2 - Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren - Google Patents

Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren Download PDF

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Publication number
DE60112726T2
DE60112726T2 DE60112726T DE60112726T DE60112726T2 DE 60112726 T2 DE60112726 T2 DE 60112726T2 DE 60112726 T DE60112726 T DE 60112726T DE 60112726 T DE60112726 T DE 60112726T DE 60112726 T2 DE60112726 T2 DE 60112726T2
Authority
DE
Germany
Prior art keywords
manufacturing process
high gain
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60112726T
Other languages
English (en)
Other versions
DE60112726D1 (de
Inventor
Salvatore Coffa
Sebania Libertino
Ferruccio Frisina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60112726D1 publication Critical patent/DE60112726D1/de
Publication of DE60112726T2 publication Critical patent/DE60112726T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE60112726T 2001-05-15 2001-05-15 Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren Expired - Fee Related DE60112726T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01830308A EP1258927B1 (de) 2001-05-15 2001-05-15 Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE60112726D1 DE60112726D1 (de) 2005-09-22
DE60112726T2 true DE60112726T2 (de) 2006-06-14

Family

ID=8184517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60112726T Expired - Fee Related DE60112726T2 (de) 2001-05-15 2001-05-15 Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren

Country Status (3)

Country Link
US (1) US6943390B2 (de)
EP (1) EP1258927B1 (de)
DE (1) DE60112726T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148528B2 (en) * 2003-07-02 2006-12-12 Micron Technology, Inc. Pinned photodiode structure and method of formation
RU2416840C2 (ru) 2006-02-01 2011-04-20 Конинклейке Филипс Электроникс, Н.В. Лавинный фотодиод в режиме счетчика гейгера
DE602006018272D1 (de) * 2006-06-05 2010-12-30 St Microelectronics Srl DELTA E-E-Strahlungsdetektor mit Isolationsgräben und seine Herstellungsmethode
JP4413940B2 (ja) * 2007-03-22 2010-02-10 株式会社東芝 固体撮像素子、単板カラー固体撮像素子及び電子機器
EP2150991B1 (de) * 2007-04-24 2017-09-27 Koninklijke Philips N.V. Methode zur ausbildung einer lawinen-fotodiode integriert mit cmos-schaltkreisen und mit dieser methode hergestellter silizium-fotovervielfacher
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US12074240B2 (en) * 2008-06-12 2024-08-27 Maxeon Solar Pte. Ltd. Backside contact solar cells with separated polysilicon doped regions
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
WO2013038346A1 (en) * 2011-09-16 2013-03-21 Insiava (Pty) Limited Near infrared light source in bulk silicon
TWI506719B (zh) 2011-11-08 2015-11-01 因特瓦克公司 基板處理系統及方法
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
CN103208555A (zh) * 2012-12-24 2013-07-17 西南技术物理研究所 紫外选择性硅雪崩光电探测芯片
TWI512955B (zh) * 2013-08-26 2015-12-11 Ind Tech Res Inst 半導體元件結構、紅外線感測元件與其製作方法
FR3018140A1 (fr) * 2014-02-28 2015-09-04 St Microelectronics Sa Photodetecteur sur soi
TWI741156B (zh) * 2017-02-28 2021-10-01 美商光程研創股份有限公司 高速光偵測裝置
JP2019165181A (ja) * 2018-03-20 2019-09-26 株式会社東芝 光検出装置
CN112385051B (zh) * 2018-07-12 2022-09-09 深圳帧观德芯科技有限公司 具有银纳米粒子电极的图像传感器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125940A (ja) * 1996-10-16 1998-05-15 Toshiba Corp 光電変換素子
US6340826B1 (en) * 1998-03-30 2002-01-22 Agisilaos Iliadis Infra-red light emitting Si-MOSFET
EP1081812A1 (de) * 1999-09-02 2001-03-07 STMicroelectronics S.r.l. Halbleitervorrichtung für elektro-optische Verwendung, Herstellungsverfahren und Halbleiterlaservorrichtung

Also Published As

Publication number Publication date
US20020185700A1 (en) 2002-12-12
US6943390B2 (en) 2005-09-13
EP1258927A1 (de) 2002-11-20
EP1258927B1 (de) 2005-08-17
DE60112726D1 (de) 2005-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee