[go: up one dir, main page]

DE60107280D1 - Tantal- oder wolfram-target mit kupferträgerplattenanordnung und herstellungsverfahren dafür - Google Patents

Tantal- oder wolfram-target mit kupferträgerplattenanordnung und herstellungsverfahren dafür

Info

Publication number
DE60107280D1
DE60107280D1 DE60107280T DE60107280T DE60107280D1 DE 60107280 D1 DE60107280 D1 DE 60107280D1 DE 60107280 T DE60107280 T DE 60107280T DE 60107280 T DE60107280 T DE 60107280T DE 60107280 D1 DE60107280 D1 DE 60107280D1
Authority
DE
Germany
Prior art keywords
tantal
production method
carrier plate
method therefor
plate arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60107280T
Other languages
English (en)
Other versions
DE60107280T2 (de
Inventor
Kunihiro Oda
Takeo Okabe
Hirohito Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of DE60107280D1 publication Critical patent/DE60107280D1/de
Application granted granted Critical
Publication of DE60107280T2 publication Critical patent/DE60107280T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/12743—Next to refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819—Group VB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
DE60107280T 2000-10-31 2001-07-30 Tantal- oder wolfram-target mit kupferträgerplattenanordnung und herstellungsverfahren dafür Expired - Lifetime DE60107280T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000332159A JP3905301B2 (ja) 2000-10-31 2000-10-31 タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
JP2000332159 2000-10-31
PCT/JP2001/006553 WO2002036848A1 (fr) 2000-10-31 2001-07-30 Ensemble cible en tantale ou tungstène sur plaque-support en alliage de cuivre, et procédé de production

Publications (2)

Publication Number Publication Date
DE60107280D1 true DE60107280D1 (de) 2004-12-23
DE60107280T2 DE60107280T2 (de) 2005-11-03

Family

ID=18808400

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60107280T Expired - Lifetime DE60107280T2 (de) 2000-10-31 2001-07-30 Tantal- oder wolfram-target mit kupferträgerplattenanordnung und herstellungsverfahren dafür

Country Status (7)

Country Link
US (1) US6759143B2 (de)
EP (1) EP1331283B1 (de)
JP (1) JP3905301B2 (de)
KR (1) KR100528888B1 (de)
DE (1) DE60107280T2 (de)
TW (1) TW554060B (de)
WO (1) WO2002036848A1 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7347353B2 (en) * 2001-12-19 2008-03-25 Nippon Mining & Metals Co., Ltd. Method for connecting magnetic substance target to backing plate, and magnetic substance target
JP4883546B2 (ja) * 2002-09-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
WO2004036626A2 (en) * 2002-10-18 2004-04-29 The Regents Of The University Of California Isostatic pressure assisted wafer bonding method
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
CN1771350A (zh) * 2003-04-01 2006-05-10 株式会社日矿材料 钽溅射靶及其制造方法
CN1871372B (zh) * 2003-11-06 2010-11-17 日矿金属株式会社 钽溅射靶
DE102004020404B4 (de) * 2004-04-23 2007-06-06 H. C. Starck Gmbh & Co. Kg Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget
WO2006054409A1 (ja) * 2004-11-17 2006-05-26 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット、スパッタリングターゲット－バッキングプレート組立体及び成膜装置
JP2006257510A (ja) 2005-03-17 2006-09-28 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットの製造方法およびスパッタリングターゲット
WO2006117949A1 (ja) * 2005-04-28 2006-11-09 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット
US20070004587A1 (en) * 2005-06-30 2007-01-04 Intel Corporation Method of forming metal on a substrate using a Ruthenium-based catalyst
WO2007040014A1 (ja) * 2005-10-04 2007-04-12 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット
JP2007247061A (ja) * 2006-03-14 2007-09-27 Applied Materials Inc スパッタリング前のスパッタリングターゲットの前調整
JP4706926B2 (ja) * 2006-03-17 2011-06-22 三菱マテリアル株式会社 バッキングプレート付きターゲットの製造方法
JP4162094B2 (ja) * 2006-05-30 2008-10-08 三菱重工業株式会社 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
EP2039797B1 (de) * 2006-06-29 2012-08-29 JX Nippon Mining & Metals Corporation Sputtertarget/rückplatte-verbindungselement
WO2008096648A1 (ja) 2007-02-09 2008-08-14 Nippon Mining & Metals Co., Ltd. 高融点金属合金、高融点金属珪化物、高融点金属炭化物、高融点金属窒化物あるいは高融点金属ホウ化物の難焼結体からなるターゲット及びその製造方法並びに同スパッタリングターゲット－バッキングプレート組立体及びその製造方法
US20110094879A1 (en) * 2008-06-02 2011-04-28 Jx Nippon Mining & Metals Corporation Tungsten Sintered Sputtering Target
CN101537530B (zh) * 2009-03-16 2011-08-03 宁波江丰电子材料有限公司 靶材结构的制作方法
EP2418299A4 (de) 2009-05-22 2013-05-01 Jx Nippon Mining & Metals Corp Tantalum-sputtertarget
KR101338758B1 (ko) 2009-08-11 2013-12-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈륨 스퍼터링 타깃
US9062371B2 (en) 2009-11-20 2015-06-23 Jx Nippon Mining & Metals Corporation Sputtering target-backing plate assembly, and its production method
EP2518179B1 (de) 2009-12-24 2016-11-16 JX Nippon Mining & Metals Corporation Gadolinium-sputtertarget und verfahren zur herstellung des targets
JP5687458B2 (ja) * 2010-09-17 2015-03-18 株式会社アカネ 金属材料の接合方法
SG189977A1 (en) 2010-10-27 2013-06-28 Jx Nippon Mining & Metals Corp Sputtering target backing plate assembly and method for producing same
JP6051492B2 (ja) * 2011-02-14 2016-12-27 トーソー エスエムディー，インク． 拡散接合スパッター・ターゲット・アセンブリの製造方法
JP2014523969A (ja) 2011-06-27 2014-09-18 ソレラス・リミテッド スパッタリングターゲット
CN102554447A (zh) * 2011-12-26 2012-07-11 昆山全亚冠环保科技有限公司 高纯Al靶焊接方法
CN102554455B (zh) * 2011-12-31 2015-07-08 宁波江丰电子材料股份有限公司 钨钛合金靶材与铜合金背板扩散焊接方法
US9831073B2 (en) 2012-02-14 2017-11-28 Tosoh Smd, Inc. Low deflection sputtering target assembly and methods of making same
CN104204282B (zh) 2012-03-21 2017-05-24 吉坤日矿日石金属株式会社 钽溅射靶及其制造方法以及使用该靶形成的半导体布线用阻挡膜
KR20150023767A (ko) * 2012-07-04 2015-03-05 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타겟
CN103521916A (zh) * 2012-07-05 2014-01-22 宁波江丰电子材料有限公司 靶材组件的焊接方法
CN103706939B (zh) * 2012-09-28 2015-10-28 清华大学 一种钨铜异种金属的扩散连接方法
DE102012109782A1 (de) * 2012-10-15 2014-04-17 Karlsruher Institut für Technologie Schichtverbund
CN104551381B (zh) * 2013-10-25 2017-01-04 宁波江丰电子材料股份有限公司 钨靶材组件的焊接方法
CN105209657A (zh) * 2013-11-06 2015-12-30 吉坤日矿日石金属株式会社 溅射靶/背衬板组件
CN104741773B (zh) * 2013-12-31 2016-08-17 宁波江丰电子材料股份有限公司 钨钛铝靶材组件的焊接方法
DE202015100433U1 (de) 2014-01-30 2015-02-09 Fhr Anlagenbau Gmbh Fügeverbindung zwischen zwei Elementen
US10176974B2 (en) 2014-09-30 2019-01-08 Jx Nippon Mining & Metals Corporation Tungsten sputtering target and method for producing same
KR102117404B1 (ko) * 2018-05-10 2020-06-01 재단법인 포항산업과학연구원 스퍼터링 폐타겟으로부터 유가금속 회수방법 및 공정 부산물 재활용 방법
WO2020195030A1 (ja) * 2019-03-28 2020-10-01 Ｊｘ金属株式会社 スパッタリングターゲット製品及びスパッタリングターゲット製品の再生品を製造する方法
CN112122764A (zh) * 2020-09-16 2020-12-25 宁波江丰电子材料股份有限公司 一种钨靶材与铜锌合金背板的扩散焊接方法
CN112935512A (zh) * 2021-03-26 2021-06-11 宁波江丰电子材料股份有限公司 一种钴靶材与铜铬合金背板的扩散焊接方法
CN113231705B (zh) * 2021-05-20 2022-11-04 上海博译金属有限公司 一种溅射镀膜用铬靶材与铜背板的复合方法
US20240229225A1 (en) * 2023-01-06 2024-07-11 Honeywell International Inc. Diffusion bonded tungsten containing target to copper alloy backing plate
JP7376742B1 (ja) 2023-05-22 2023-11-08 株式会社アルバック ターゲット組立体およびターゲット組立体の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069906B2 (ja) 1986-03-04 1994-02-09 日本発条株式会社 黒鉛と銅または銅合金からなる複合材
JPH01180976A (ja) * 1988-01-12 1989-07-18 Tanaka Kikinzoku Kogyo Kk スパッタリング用バッキングプレート
TW234767B (de) * 1992-09-29 1994-11-21 Nippon En Kk
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
WO1998041669A1 (en) * 1997-03-19 1998-09-24 Johnson Matthey Electronics, Inc. Ni-plated target diffusion bonded to a backing plate and method of making same
WO2000006793A1 (en) 1998-07-27 2000-02-10 Applied Materials, Inc. Sputtering target assembly
US6451185B2 (en) * 1998-08-12 2002-09-17 Honeywell International Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
JP2000239837A (ja) * 1999-02-15 2000-09-05 Sony Corp 固相拡散接合されたスパッタリングターゲット組立体の分離方法
JP2000239838A (ja) * 1999-02-15 2000-09-05 Sony Corp 固相拡散接合されたスパッタリングターゲット組立体およびその製造方法
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6620296B2 (en) * 2000-07-17 2003-09-16 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering

Also Published As

Publication number Publication date
JP3905301B2 (ja) 2007-04-18
TW554060B (en) 2003-09-21
WO2002036848A1 (fr) 2002-05-10
EP1331283B1 (de) 2004-11-17
US6759143B2 (en) 2004-07-06
EP1331283A4 (de) 2004-04-28
EP1331283A1 (de) 2003-07-30
US20030134143A1 (en) 2003-07-17
JP2002129316A (ja) 2002-05-09
DE60107280T2 (de) 2005-11-03
KR100528888B1 (ko) 2005-11-15
KR20030045153A (ko) 2003-06-09

Similar Documents

Publication Publication Date Title
DE60107280D1 (de) Tantal- oder wolfram-target mit kupferträgerplattenanordnung und herstellungsverfahren dafür
BR9913394B1 (pt) material de base lubrificante.
FR2823015B1 (fr) Antenne et son procede de fabrication
DE69923558D1 (de) Wendelantenne
DE69911753D1 (de) Elektrolumineszente anordnungen
DE60044974D1 (de) Mehrschichtige leiterplatte und leiterplatten-herstellungsmethode
NL1015176A1 (nl) Lamp en lampvoetsamenstel.
NL1015174A1 (nl) Lamp en lampvoetsamenstel.
FI113213B (fi) Tasoantenni
BR0316733B1 (pt) transportador linear de catodo.
NL1015175A1 (nl) Lamp en lampvoetsamenstel.
BR0015741B1 (pt) processo de fabricação de blocos carbonados de elevada resistência aos choques térmicos.
DE69937868D1 (de) Vereinfachtes Induktivitätssubstrat mit hohem Q
NO20010735L (no) Antenneanordning
NL1015467A1 (nl) Boogbuis en vervaardigingswijze daarvoor.
BR0208938B1 (pt) método de pré-tratamento para material de deposição não eletrolìtica.
DE69903998D1 (de) Formwerkzeuge
IT1306882B1 (it) Innesto elettromagnetico.
DE69934667D1 (de) Lumineszentes material
NO20016192L (no) Kombinasjonsantennesokkel
HUP9900267A3 (en) Electrode with an imposed coil, lamp, and method for manufacturing the electrode
FI20010158L (fi) Mikroaaltoantennijärjestely
ITMI981986A0 (it) Scaffalatura su base mobile ad azionamento perfezionato
DE69919643D1 (de) Elektrolumineszenzpaneel
ES1044494Y (es) Fregadero metalico.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NIPPON MINING & METALS CO.LTD., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 1331283

Country of ref document: EP

Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN, DE