Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/042—Superluminescent diodes
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
  • G02B6/24—Coupling light guides
  • G02B6/26—Optical coupling means
  • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
  • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
  • G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
  • G02B6/29361—Interference filters, e.g. multilayer coatings, thin film filters, dichroic splitters or mirrors based on multilayers, WDM filters
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D8/00—Diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
• • H10P14/3824—
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
  • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
  • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
  • G02B2006/12083—Constructional arrangements
  • G02B2006/12128—Multiple Quantum Well [MQW]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/2054—Methods of obtaining the confinement
  • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
  • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/2054—Methods of obtaining the confinement
  • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
  • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
  • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• General Physics & Mathematics (AREA)
• Nanotechnology (AREA)
• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Crystallography & Structural Chemistry (AREA)
• Life Sciences & Earth Sciences (AREA)
• Biophysics (AREA)
• Electromagnetism (AREA)
• Semiconductor Lasers (AREA)
• Recrystallisation Techniques (AREA)
• Junction Field-Effect Transistors (AREA)
• Optical Integrated Circuits (AREA)
• Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Applications Claiming Priority (5)

Publications (1)

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• 2001
  • 2001-03-02 EP EP01907971A patent/EP1261986A1/de not_active Withdrawn
  • 2001-03-02 MX MXPA02008450A patent/MXPA02008450A/es unknown
  • 2001-03-02 BR BR0109073-9A patent/BR0109073A/pt not_active IP Right Cessation
  • 2001-03-02 IL IL15083401A patent/IL150834A0/xx unknown
  • 2001-03-02 WO PCT/GB2001/000904 patent/WO2001067497A1/en not_active Ceased
  • 2001-03-02 KR KR1020027011816A patent/KR20020086626A/ko not_active Withdrawn
  • 2001-03-02 AU AU35830/01A patent/AU774678B2/en not_active Ceased
  • 2001-03-02 AU AU35836/01A patent/AU775026B2/en not_active Ceased
  • 2001-03-02 MX MXPA02008451A patent/MXPA02008451A/es unknown
  • 2001-03-02 JP JP2001566234A patent/JP2004500715A/ja active Pending
  • 2001-03-02 WO PCT/GB2001/000898 patent/WO2001067568A1/en not_active Ceased
  • 2001-03-02 CA CA002398359A patent/CA2398359A1/en not_active Abandoned
  • 2001-03-02 CA CA002398301A patent/CA2398301A1/en not_active Abandoned
  • 2001-03-02 HK HK02109191.6A patent/HK1048390A1/zh unknown
  • 2001-03-02 EP EP01907965A patent/EP1262002B1/de not_active Expired - Lifetime
  • 2001-03-02 HK HK02109190.7A patent/HK1048393A1/zh unknown
  • 2001-03-02 KR KR1020027011820A patent/KR20020089386A/ko not_active Withdrawn
  • 2001-03-02 JP JP2001566173A patent/JP2003526918A/ja active Pending
  • 2001-03-02 IL IL15083501A patent/IL150835A0/xx unknown
  • 2001-03-02 CN CN01806266A patent/CN1416607A/zh active Pending
  • 2001-03-02 CN CN01806267A patent/CN1416589A/zh active Pending
  • 2001-03-02 DE DE60106575T patent/DE60106575D1/de not_active Expired - Fee Related

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