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DE60045404D1 - Strahlungsbildaufnahmeapparatus - Google Patents

Strahlungsbildaufnahmeapparatus

Info

Publication number
DE60045404D1
DE60045404D1 DE60045404T DE60045404T DE60045404D1 DE 60045404 D1 DE60045404 D1 DE 60045404D1 DE 60045404 T DE60045404 T DE 60045404T DE 60045404 T DE60045404 T DE 60045404T DE 60045404 D1 DE60045404 D1 DE 60045404D1
Authority
DE
Germany
Prior art keywords
strahlungsbildaufnahmeapparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045404T
Other languages
English (en)
Inventor
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60045404D1 publication Critical patent/DE60045404D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60045404T 1999-07-30 2000-07-27 Strahlungsbildaufnahmeapparatus Expired - Lifetime DE60045404D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21741099 1999-07-30

Publications (1)

Publication Number Publication Date
DE60045404D1 true DE60045404D1 (de) 2011-02-03

Family

ID=16703775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045404T Expired - Lifetime DE60045404D1 (de) 1999-07-30 2000-07-27 Strahlungsbildaufnahmeapparatus

Country Status (3)

Country Link
US (1) US6489618B1 (de)
EP (1) EP1073267B1 (de)
DE (1) DE60045404D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3631114B2 (ja) * 2000-08-01 2005-03-23 キヤノン株式会社 撮像装置
JP3840050B2 (ja) * 2000-11-01 2006-11-01 キヤノン株式会社 電磁波変換装置
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
JP2003240861A (ja) * 2002-02-20 2003-08-27 Canon Inc 放射線検出素子、放射線撮像装置及び放射線検出方法
US7214945B2 (en) * 2002-06-11 2007-05-08 Canon Kabushiki Kaisha Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
EP1420453B1 (de) * 2002-11-13 2011-03-09 Canon Kabushiki Kaisha Bildaufnahmevorrichtung, Strahlungsbildaufnahmevorrichtung und Strahlungsbildaufnahmesystem
CN100502021C (zh) * 2005-06-13 2009-06-17 佳能株式会社 电磁辐射检测设备、辐射检测设备和系统及激光处理方法
JP5013754B2 (ja) * 2005-06-13 2012-08-29 キヤノン株式会社 電磁波検出装置、放射線検出装置、放射線検出システム及びレーザ加工方法
JP5196739B2 (ja) * 2006-06-09 2013-05-15 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP6247918B2 (ja) * 2013-12-09 2017-12-13 浜松ホトニクス株式会社 放射線イメージセンサ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211321A (ja) 1991-10-25 1993-08-20 Canon Inc アバランシェフォトダイオード、及びそれを具備する信号処理装置
US5401952A (en) 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
US5452004A (en) 1993-06-17 1995-09-19 Litton Systems, Inc. Focal plane array imaging device with random access architecture
US5442176A (en) * 1993-10-06 1995-08-15 Raytheon Company Infrared detector array
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
JP3897389B2 (ja) * 1996-02-22 2007-03-22 キヤノン株式会社 光電変換装置の駆動方法及び光電変換装置
JP3559640B2 (ja) * 1996-02-27 2004-09-02 キヤノン株式会社 光電変換装置
US5986297A (en) * 1996-05-22 1999-11-16 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements

Also Published As

Publication number Publication date
EP1073267B1 (de) 2010-12-22
US6489618B1 (en) 2002-12-03
EP1073267A2 (de) 2001-01-31
EP1073267A3 (de) 2009-04-22

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