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DE60042184D1 - Verfahren und Zusammensetzung zur Entschichtung von Photoresist - Google Patents

Verfahren und Zusammensetzung zur Entschichtung von Photoresist

Info

Publication number
DE60042184D1
DE60042184D1 DE60042184T DE60042184T DE60042184D1 DE 60042184 D1 DE60042184 D1 DE 60042184D1 DE 60042184 T DE60042184 T DE 60042184T DE 60042184 T DE60042184 T DE 60042184T DE 60042184 D1 DE60042184 D1 DE 60042184D1
Authority
DE
Germany
Prior art keywords
composition
removing photoresist
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042184T
Other languages
English (en)
Inventor
Masahiro Nohara
Yukihiko Takeuchi
Hisaki Abe
Taketo Maruyama
Tetsuo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Sharp Corp
Original Assignee
Mitsubishi Gas Chemical Co Inc
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc, Sharp Corp filed Critical Mitsubishi Gas Chemical Co Inc
Application granted granted Critical
Publication of DE60042184D1 publication Critical patent/DE60042184D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H10P70/273—
    • H10W20/085—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE60042184T 1999-03-31 2000-03-23 Verfahren und Zusammensetzung zur Entschichtung von Photoresist Expired - Lifetime DE60042184D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11092377A JP2000284506A (ja) 1999-03-31 1999-03-31 フォトレジスト剥離剤組成物および剥離方法

Publications (1)

Publication Number Publication Date
DE60042184D1 true DE60042184D1 (de) 2009-06-25

Family

ID=14052747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042184T Expired - Lifetime DE60042184D1 (de) 1999-03-31 2000-03-23 Verfahren und Zusammensetzung zur Entschichtung von Photoresist

Country Status (7)

Country Link
US (1) US6458517B2 (de)
EP (1) EP1043629B1 (de)
JP (1) JP2000284506A (de)
KR (1) KR100657072B1 (de)
DE (1) DE60042184D1 (de)
SG (1) SG76650A1 (de)
TW (1) TW457527B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
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US6455479B1 (en) * 2000-08-03 2002-09-24 Shipley Company, L.L.C. Stripping composition
JP2002114993A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄剤及び洗浄方法
JP4582278B2 (ja) * 2001-06-22 2010-11-17 三菱瓦斯化学株式会社 フォトレジスト剥離剤組成物
JP4724959B2 (ja) * 2001-07-02 2011-07-13 三菱瓦斯化学株式会社 フォトレジスト剥離剤組成物
KR20030011480A (ko) * 2001-08-03 2003-02-11 주식회사 덕성 포토레지스트용 박리액 조성물
JP2003171694A (ja) * 2001-12-03 2003-06-20 Mejiro Optica:Kk 洗浄用組成物並びに洗浄方法
JP3787085B2 (ja) * 2001-12-04 2006-06-21 関東化学株式会社 フォトレジスト残渣除去液組成物
JP2003177556A (ja) * 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
US7563753B2 (en) * 2001-12-12 2009-07-21 Hynix Semiconductor Inc. Cleaning solution for removing photoresist
KR100483846B1 (ko) * 2002-10-15 2005-04-19 삼성전자주식회사 신너 조성물 및 이를 사용한 포토레지스트의 스트립핑 방법
KR100843984B1 (ko) * 2002-02-22 2008-07-07 주식회사 동진쎄미켐 감광성 수지 조성물을 제거하기 위한 씬너 조성물
US7148265B2 (en) * 2002-09-30 2006-12-12 Rohm And Haas Electronic Materials Llc Functional polymer
US7323290B2 (en) * 2002-09-30 2008-01-29 Eternal Technology Corporation Dry film photoresist
US7238653B2 (en) * 2003-03-10 2007-07-03 Hynix Semiconductor Inc. Cleaning solution for photoresist and method for forming pattern using the same
JP4202859B2 (ja) 2003-08-05 2008-12-24 花王株式会社 レジスト用剥離剤組成物
US20050049162A1 (en) * 2003-08-29 2005-03-03 Schlosser Ted M. Petroleum-free, ammonia-free cleaner for firearms and ordnance
KR101129433B1 (ko) * 2004-08-30 2012-03-26 삼성전자주식회사 박막 트랜지스터 기판의 제조 방법 및 스트립핑 조성물
JP4846301B2 (ja) * 2004-08-30 2011-12-28 サムスン エレクトロニクス カンパニー リミテッド 薄膜トランジスタ基板の製造方法及びストリッピング組成物
JP2006072083A (ja) * 2004-09-03 2006-03-16 Mitsubishi Electric Corp レジスト除去用組成物
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
JP2008541426A (ja) * 2005-05-06 2008-11-20 マリンクロッド・ベイカー・インコーポレイテッド エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物
EP1729179A1 (de) 2005-06-03 2006-12-06 Atotech Deutschland Gmbh Verfahren zur Entschichtung von feinen Resiststrukturen
JP4731406B2 (ja) * 2006-05-31 2011-07-27 花王株式会社 剥離剤組成物
TW200925800A (en) * 2007-12-06 2009-06-16 Mallinckrodt Baker Inc Fluoride-free photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
KR101083020B1 (ko) 2009-04-16 2011-11-15 에스화인켐 주식회사 광학 확산판의 스크린 인쇄 잉크 리무버 조성물
JP5659729B2 (ja) * 2010-11-24 2015-01-28 三菱瓦斯化学株式会社 フォトレジスト剥離剤組成物
TWI566058B (zh) * 2013-04-25 2017-01-11 奇美實業股份有限公司 剝離光阻用組成物及其使用方法
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
JP5885041B1 (ja) * 2014-10-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
JP5885043B1 (ja) * 2014-12-05 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液とその製造方法
JP5885045B1 (ja) * 2015-01-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液とその製造方法
JP5885046B1 (ja) * 2015-03-24 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
WO2020092918A1 (en) 2018-11-02 2020-05-07 Ac Products, Inc. Methods of reducing the adhesion of a maskant
KR102337375B1 (ko) * 2018-12-28 2021-12-09 세종대학교산학협력단 엠보 패턴을 포함하는 구조체 및 이의 용도
CN113921383B (zh) * 2021-09-14 2022-06-03 浙江奥首材料科技有限公司 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612455B2 (ja) 1985-08-10 1994-02-16 長瀬産業株式会社 剥離剤組成物
DE3537441A1 (de) 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
EP0256284B1 (de) * 1986-08-09 1991-03-27 Micro-Image Technology Limited Zusammensetzung für die Herstellung von integrierten Schaltungen, Anwendungs- und Herstellungsmethode
JP2553872B2 (ja) * 1987-07-21 1996-11-13 東京応化工業株式会社 ホトレジスト用剥離液
JPH0769618B2 (ja) 1987-09-25 1995-07-31 旭化成工業株式会社 フオトレジスト用剥離剤
JPH0769619B2 (ja) 1987-09-25 1995-07-31 旭化成工業株式会社 フオトレジスト剥離剤
US4931103A (en) * 1988-08-11 1990-06-05 E. I. Du Pont De Nemours And Company Tricholine phosphate surface treating agent
JP2527268B2 (ja) * 1990-09-17 1996-08-21 東京応化工業株式会社 レジスト用剥離剤組成物
US5192461A (en) * 1991-08-23 1993-03-09 Enthone-Omi, Inc. Aqueous degreasing solution having high free alkalinity
JP3095296B2 (ja) 1991-12-19 2000-10-03 株式会社日立製作所 レジスト剥離方法、これを用いた薄膜回路素子の製造方法、および、レジスト剥離液
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5962192A (en) * 1996-06-19 1999-10-05 Printing Developments, Inc. Photoresists and method for making printing plates
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
KR100288769B1 (ko) * 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물

Also Published As

Publication number Publication date
EP1043629A3 (de) 2001-04-18
US20020009674A1 (en) 2002-01-24
EP1043629A2 (de) 2000-10-11
SG76650A1 (en) 2000-11-21
EP1043629B1 (de) 2009-05-13
KR20000076984A (ko) 2000-12-26
US6458517B2 (en) 2002-10-01
TW457527B (en) 2001-10-01
JP2000284506A (ja) 2000-10-13
KR100657072B1 (ko) 2006-12-15

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