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DE60030386D1 - Verfahren zur Herstellung Feldeffektanordnungen und Kapzitäten mit Dünnschichtdielektrisch und so hergestellte Anordnungen - Google Patents

Verfahren zur Herstellung Feldeffektanordnungen und Kapzitäten mit Dünnschichtdielektrisch und so hergestellte Anordnungen

Info

Publication number
DE60030386D1
DE60030386D1 DE60030386T DE60030386T DE60030386D1 DE 60030386 D1 DE60030386 D1 DE 60030386D1 DE 60030386 T DE60030386 T DE 60030386T DE 60030386 T DE60030386 T DE 60030386T DE 60030386 D1 DE60030386 D1 DE 60030386D1
Authority
DE
Germany
Prior art keywords
devices
produced
thin film
field effect
film dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030386T
Other languages
English (en)
Other versions
DE60030386T2 (de
Inventor
Glenn B Alers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE60030386D1 publication Critical patent/DE60030386D1/de
Application granted granted Critical
Publication of DE60030386T2 publication Critical patent/DE60030386T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10P10/00—
    • H10P14/6532—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H10P14/6526—
    • H10P95/00—
    • H10P14/6334—
    • H10P14/69393—
DE60030386T 1999-11-04 2000-10-30 Verfahren zur Herstellung Feldeffektanordnungen und Kapzitäten mit Dünnschichtdielektrisch und so hergestellte Anordnungen Expired - Lifetime DE60030386T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US434424 1999-11-04
US09/434,424 US6284663B1 (en) 1998-04-15 1999-11-04 Method for making field effect devices and capacitors with thin film dielectrics and resulting devices

Publications (2)

Publication Number Publication Date
DE60030386D1 true DE60030386D1 (de) 2006-10-12
DE60030386T2 DE60030386T2 (de) 2007-09-13

Family

ID=23724188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030386T Expired - Lifetime DE60030386T2 (de) 1999-11-04 2000-10-30 Verfahren zur Herstellung Feldeffektanordnungen und Kapzitäten mit Dünnschichtdielektrisch und so hergestellte Anordnungen

Country Status (6)

Country Link
US (1) US6284663B1 (de)
EP (1) EP1098358B1 (de)
JP (1) JP2001196368A (de)
KR (1) KR100675988B1 (de)
DE (1) DE60030386T2 (de)
TW (1) TW507380B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020168847A1 (en) * 2001-05-09 2002-11-14 Applied Materials, Inc. Methods of forming a nitridated surface on a metallic layer and products produced thereby
KR100759258B1 (ko) * 2001-06-29 2007-09-17 매그나칩 반도체 유한회사 반도체소자의 제조방법
US6677254B2 (en) * 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US20030230550A1 (en) * 2002-06-12 2003-12-18 Kuang-Yeh Chang Lithography process
JP4907839B2 (ja) 2003-03-26 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4562751B2 (ja) * 2007-05-28 2010-10-13 東京エレクトロン株式会社 絶縁膜の形成方法
KR100877261B1 (ko) * 2007-07-23 2009-01-07 주식회사 동부하이텍 반도체 소자의 ｍｉｍ 커패시터 제조 방법
US9166004B2 (en) * 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
KR102131078B1 (ko) 2013-09-05 2020-08-06 삼성전자 주식회사 Mim 커패시터 및 이의 제조 방법, mim 커패시터를 포함하는 반도체 소자
CN115425074A (zh) * 2022-08-29 2022-12-02 中山大学 一种铁电负电容场效应晶体管及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
KR100215338B1 (ko) * 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
JP2722873B2 (ja) * 1991-07-29 1998-03-09 日本電気株式会社 半導体装置およびその製造方法
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
JP2786071B2 (ja) * 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
JP2679599B2 (ja) * 1993-12-02 1997-11-19 日本電気株式会社 半導体装置の製造方法
JPH07161931A (ja) 1993-12-02 1995-06-23 Nec Corp 半導体装置の製造方法
KR950034588A (ko) * 1994-03-17 1995-12-28 오가 노리오 탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치
US6291343B1 (en) * 1994-11-14 2001-09-18 Applied Materials, Inc. Plasma annealing of substrates to improve adhesion
US5635425A (en) * 1995-05-25 1997-06-03 Industrial Technology Research Institute In-situ N2 plasma treatment for PE TEOS oxide deposition
KR0183732B1 (ko) * 1995-09-01 1999-03-20 김광호 반도체 장치의 캐패시터 제작방법
KR970052338A (ko) * 1995-12-23 1997-07-29 김주용 반도체 소자의 제조방법
KR100207467B1 (ko) 1996-02-29 1999-07-15 윤종용 반도체 장치의 커패시터 제조 방법
EP0847079A3 (de) * 1996-12-05 1999-11-03 Texas Instruments Incorporated Verfahren zur Herstellung von einer MIS-Elektrode
US6001741A (en) * 1998-04-15 1999-12-14 Lucent Technologies Inc. Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices

Also Published As

Publication number Publication date
KR100675988B1 (ko) 2007-01-29
EP1098358A3 (de) 2004-01-07
EP1098358B1 (de) 2006-08-30
EP1098358A2 (de) 2001-05-09
DE60030386T2 (de) 2007-09-13
JP2001196368A (ja) 2001-07-19
KR20010051362A (ko) 2001-06-25
US6284663B1 (en) 2001-09-04
TW507380B (en) 2002-10-21

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