DE60028726D1 - Neue zusammensetzung zum selektiven ätzen von oxiden auf metallen - Google Patents
Neue zusammensetzung zum selektiven ätzen von oxiden auf metallenInfo
- Publication number
- DE60028726D1 DE60028726D1 DE60028726T DE60028726T DE60028726D1 DE 60028726 D1 DE60028726 D1 DE 60028726D1 DE 60028726 T DE60028726 T DE 60028726T DE 60028726 T DE60028726 T DE 60028726T DE 60028726 D1 DE60028726 D1 DE 60028726D1
- Authority
- DE
- Germany
- Prior art keywords
- oxides
- metals
- new composition
- selective action
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- H10P70/273—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/105—Nitrates; Nitrites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- H10P50/667—
-
- H10P70/234—
-
- H10P70/277—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Luminescent Compositions (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Detergent Compositions (AREA)
- Compounds Of Iron (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/418,610 US6361712B1 (en) | 1999-10-15 | 1999-10-15 | Composition for selective etching of oxides over metals |
| US418610 | 1999-10-15 | ||
| PCT/US2000/041145 WO2001029284A1 (en) | 1999-10-15 | 2000-10-12 | Novel composition for selective etching of oxides over metals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60028726D1 true DE60028726D1 (de) | 2006-07-27 |
| DE60028726T2 DE60028726T2 (de) | 2007-05-24 |
Family
ID=23658837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60028726T Expired - Lifetime DE60028726T2 (de) | 1999-10-15 | 2000-10-12 | Neue zusammensetzung zum selektiven ätzen von oxiden auf metallen |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6361712B1 (de) |
| EP (1) | EP1141444B1 (de) |
| JP (1) | JP3829240B2 (de) |
| KR (1) | KR100693768B1 (de) |
| AT (1) | ATE330328T1 (de) |
| DE (1) | DE60028726T2 (de) |
| TW (1) | TWI233950B (de) |
| WO (1) | WO2001029284A1 (de) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6609955B1 (en) * | 1998-12-04 | 2003-08-26 | Farrow System Limited | Method for removing surface coatings |
| US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6653243B2 (en) * | 2000-05-25 | 2003-11-25 | Micron Technology, Inc. | Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates |
| US6541391B2 (en) | 2001-02-28 | 2003-04-01 | Micron Technology, Inc. | Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates |
| JP2002367956A (ja) * | 2001-04-06 | 2002-12-20 | Seiko Epson Corp | 半導体装置の電極パッド及びその製造方法 |
| TW480619B (en) * | 2001-04-17 | 2002-03-21 | United Microelectronics Corp | Cleaning method for dual damascene manufacture process |
| KR100419924B1 (ko) * | 2001-05-02 | 2004-02-25 | 삼성전자주식회사 | 세정액 및 이를 사용한 반사방지막 성분의 세정 방법 |
| MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
| US6573175B1 (en) * | 2001-11-30 | 2003-06-03 | Micron Technology, Inc. | Dry low k film application for interlevel dielectric and method of cleaning etched features |
| DE60328014D1 (de) * | 2002-04-25 | 2009-07-30 | Fujifilm Electronic Materials | Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen |
| US6881675B2 (en) * | 2002-05-15 | 2005-04-19 | Taiwan Semiconductor Manufacturing Co, Ltd. | Method and system for reducing wafer edge tungsten residue utilizing a spin etch |
| US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| JP4443864B2 (ja) * | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
| US20060166846A1 (en) * | 2002-08-19 | 2006-07-27 | Ying-Hao Li | Remover solution |
| WO2004019134A1 (ja) * | 2002-08-22 | 2004-03-04 | Daikin Industries, Ltd. | 剥離液 |
| US8236382B2 (en) * | 2002-09-30 | 2012-08-07 | Lam Research Corporation | Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same |
| US6969688B2 (en) * | 2002-10-08 | 2005-11-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet etchant composition and method for etching HfO2 and ZrO2 |
| SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7030034B2 (en) | 2003-09-18 | 2006-04-18 | Micron Technology, Inc. | Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum |
| US7192910B2 (en) * | 2003-10-28 | 2007-03-20 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
| US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
| US7312152B2 (en) * | 2004-06-28 | 2007-12-25 | Intel Corporation | Lactate-containing corrosion inhibitor |
| JP2006114872A (ja) * | 2004-09-15 | 2006-04-27 | Daikin Ind Ltd | 銅酸化物を含む銅変質層の除去液及び除去方法 |
| WO2006054996A1 (en) * | 2004-11-19 | 2006-05-26 | Honeywell International Inc. | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| US7682458B2 (en) * | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
| WO2006124201A2 (en) * | 2005-05-13 | 2006-11-23 | Sachem, Inc. | Selective wet etching of oxides |
| JP2008547202A (ja) * | 2005-06-13 | 2008-12-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法 |
| US7879782B2 (en) * | 2005-10-13 | 2011-02-01 | Air Products And Chemicals, Inc. | Aqueous cleaning composition and method for using same |
| WO2007045269A1 (en) * | 2005-10-21 | 2007-04-26 | Freescale Semiconductor, Inc. | Method for cleaning a semiconductor structure and chemistry thereof |
| US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
| US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
| US7367343B2 (en) * | 2006-01-23 | 2008-05-06 | Micron Technology, Inc. | Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution |
| JP2007211203A (ja) * | 2006-02-13 | 2007-08-23 | Three M Innovative Properties Co | フッ素含有化合物を含む洗浄剤組成物及びその使用方法 |
| US20070191243A1 (en) * | 2006-02-13 | 2007-08-16 | General Chemical Performance Products, Llc | Removal of silica based etch residue using aqueous chemistry |
| JP2007220891A (ja) * | 2006-02-16 | 2007-08-30 | Toshiba Corp | ポストcmp処理液、およびこれを用いた半導体装置の製造方法 |
| JP4666515B2 (ja) * | 2006-04-07 | 2011-04-06 | 花王株式会社 | 剥離剤組成物 |
| WO2007140193A1 (en) * | 2006-05-25 | 2007-12-06 | Honeywell International Inc. | Selective tantalum carbide etchant, methods of production and uses thereof |
| US7947637B2 (en) * | 2006-06-30 | 2011-05-24 | Fujifilm Electronic Materials, U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| KR100823714B1 (ko) * | 2006-08-24 | 2008-04-21 | 삼성전자주식회사 | 폴리머 제거용 세정액 및 이를 이용한 폴리머 제거방법 |
| US20080234162A1 (en) * | 2007-03-21 | 2008-09-25 | General Chemical Performance Products Llc | Semiconductor etch residue remover and cleansing compositions |
| CN201219685Y (zh) * | 2008-04-16 | 2009-04-15 | 韩广民 | 组装结构产品及庭院椅 |
| WO2010042457A1 (en) | 2008-10-09 | 2010-04-15 | Mallinckrodt Baker, Inc. | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
| US8366954B2 (en) * | 2009-01-13 | 2013-02-05 | Avantor Performance Materials, Bv | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
| US8940178B2 (en) * | 2009-03-18 | 2015-01-27 | E I Du Pont De Nemours And Company | Textured silicon substrate and method |
| JP2011016975A (ja) * | 2009-06-12 | 2011-01-27 | Asahi Kasei Corp | 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法 |
| US8242029B2 (en) * | 2009-11-23 | 2012-08-14 | Asm International N.V. | Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate |
| WO2011093445A1 (ja) * | 2010-01-28 | 2011-08-04 | 三菱瓦斯化学株式会社 | 銅/チタン系多層薄膜用エッチング液 |
| JP5513196B2 (ja) | 2010-03-25 | 2014-06-04 | 富士フイルム株式会社 | 洗浄組成物及び半導体装置の製造方法 |
| KR101838787B1 (ko) * | 2011-06-30 | 2018-03-14 | 아사히 가세이 가부시키가이샤 | 에칭액 및 그것을 이용한 에칭 방법 |
| JP5692472B1 (ja) * | 2013-04-12 | 2015-04-01 | 三菱瓦斯化学株式会社 | 銅およびチタンを含む多層膜のエッチングに使用される液体組成物、および該組成物を用いたエッチング方法、多層膜配線の製造方法、基板 |
| KR102456079B1 (ko) * | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법 |
| CN110042393B (zh) * | 2019-04-08 | 2020-11-24 | 绍兴明煌科技有限公司 | 蚀刻液组合物 |
| IL294958A (en) | 2020-01-30 | 2022-09-01 | Showa Denko Kk | A method for removing metal compounds |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4204013A (en) | 1978-10-20 | 1980-05-20 | Oxy Metal Industries Corporation | Method for treating polymeric substrates prior to plating employing accelerating composition containing an alkyl amine |
| JPH02257633A (ja) * | 1989-03-30 | 1990-10-18 | Kyushu Electron Metal Co Ltd | 半導体基板面の保全方法 |
| US5981454A (en) * | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
| US5143562A (en) * | 1991-11-01 | 1992-09-01 | Henkel Corporation | Broadly applicable phosphate conversion coating composition and process |
| US5545353A (en) | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
| JP3236220B2 (ja) | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| JPH09174429A (ja) * | 1995-12-22 | 1997-07-08 | Tokyo Seimitsu Co Ltd | ウェーハ研磨装置 |
| JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US5780406A (en) | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US6033993A (en) | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
| US6251150B1 (en) * | 1999-05-27 | 2001-06-26 | Ekc Technology, Inc. | Slurry composition and method of chemical mechanical polishing using same |
-
1999
- 1999-10-15 US US09/418,610 patent/US6361712B1/en not_active Expired - Lifetime
-
2000
- 2000-10-12 JP JP2001532262A patent/JP3829240B2/ja not_active Expired - Fee Related
- 2000-10-12 AT AT00982636T patent/ATE330328T1/de not_active IP Right Cessation
- 2000-10-12 KR KR1020017007388A patent/KR100693768B1/ko not_active Expired - Fee Related
- 2000-10-12 DE DE60028726T patent/DE60028726T2/de not_active Expired - Lifetime
- 2000-10-12 WO PCT/US2000/041145 patent/WO2001029284A1/en not_active Ceased
- 2000-10-12 EP EP00982636A patent/EP1141444B1/de not_active Expired - Lifetime
- 2000-10-13 TW TW089121493A patent/TWI233950B/zh not_active IP Right Cessation
-
2001
- 2001-06-06 US US09/874,081 patent/US6589439B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6361712B1 (en) | 2002-03-26 |
| US20010032829A1 (en) | 2001-10-25 |
| EP1141444B1 (de) | 2006-06-14 |
| EP1141444A4 (de) | 2004-05-26 |
| KR20010101200A (ko) | 2001-11-14 |
| JP2003512741A (ja) | 2003-04-02 |
| ATE330328T1 (de) | 2006-07-15 |
| JP3829240B2 (ja) | 2006-10-04 |
| WO2001029284A1 (en) | 2001-04-26 |
| TWI233950B (en) | 2005-06-11 |
| DE60028726T2 (de) | 2007-05-24 |
| US6589439B2 (en) | 2003-07-08 |
| KR100693768B1 (ko) | 2007-03-12 |
| EP1141444A1 (de) | 2001-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |