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DE60021514D1 - Einen verbundwerkstoff verwendendes halbleiterbauteil oder wärmeableitendes substrat dafür - Google Patents

Einen verbundwerkstoff verwendendes halbleiterbauteil oder wärmeableitendes substrat dafür

Info

Publication number
DE60021514D1
DE60021514D1 DE60021514T DE60021514T DE60021514D1 DE 60021514 D1 DE60021514 D1 DE 60021514D1 DE 60021514 T DE60021514 T DE 60021514T DE 60021514 T DE60021514 T DE 60021514T DE 60021514 D1 DE60021514 D1 DE 60021514D1
Authority
DE
Germany
Prior art keywords
semi
heat
composite material
finished component
remaining substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60021514T
Other languages
English (en)
Other versions
DE60021514T2 (de
Inventor
Akira Fukui
Shinichi Yamagata
Kazuya Kamitake
Yugaku Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE60021514D1 publication Critical patent/DE60021514D1/de
Publication of DE60021514T2 publication Critical patent/DE60021514T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W40/259—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
    • C04B41/5096—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H10W40/253—
    • H10W40/257—
    • H10W70/692—
    • H10W70/698—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W70/682—
    • H10W70/685—
    • H10W72/5525—
    • H10W72/877—
    • H10W72/884—
    • H10W74/00—
    • H10W90/724—
    • H10W90/736—
    • H10W90/737—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249955—Void-containing component partially impregnated with adjacent component
    • Y10T428/249956—Void-containing component is inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249955—Void-containing component partially impregnated with adjacent component
    • Y10T428/249956—Void-containing component is inorganic
    • Y10T428/249957—Inorganic impregnant

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
DE2000621514 1999-06-14 2000-06-08 Einen verbundwerkstoff verwendendes halbleiterbauteil oder wärmeableitendes substrat dafür Expired - Lifetime DE60021514T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16621499 1999-06-14
JP16621499 1999-06-14
PCT/JP2000/003743 WO2000076940A1 (fr) 1999-06-14 2000-06-08 Materiau composite et dispositif a semi-conducteur comprenant celui-ci

Publications (2)

Publication Number Publication Date
DE60021514D1 true DE60021514D1 (de) 2005-09-01
DE60021514T2 DE60021514T2 (de) 2006-04-13

Family

ID=15827231

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000621514 Expired - Lifetime DE60021514T2 (de) 1999-06-14 2000-06-08 Einen verbundwerkstoff verwendendes halbleiterbauteil oder wärmeableitendes substrat dafür

Country Status (7)

Country Link
US (1) US6737168B1 (de)
EP (1) EP1114807B1 (de)
JP (1) JP4360061B2 (de)
KR (1) KR20010079642A (de)
DE (1) DE60021514T2 (de)
TW (1) TWI229063B (de)
WO (1) WO2000076940A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002294358A (ja) * 2001-04-02 2002-10-09 Taiheiyo Cement Corp 熱伝導性複合材料
JP4203283B2 (ja) * 2001-09-19 2008-12-24 日本碍子株式会社 複合材料
JP4136380B2 (ja) * 2001-12-21 2008-08-20 日本碍子株式会社 高熱伝導性含Ｓｉ材料及びその製造方法
US6972109B1 (en) * 2002-01-29 2005-12-06 The United States Of America As Represented By The Secretary Of The Air Force Method for improving tensile properties of AlSiC composites
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
JP2004104074A (ja) * 2002-07-17 2004-04-02 Sumitomo Electric Ind Ltd 半導体装置用部材
US7364692B1 (en) * 2002-11-13 2008-04-29 United States Of America As Represented By The Secretary Of The Air Force Metal matrix composite material with high thermal conductivity and low coefficient of thermal expansion
JP3960933B2 (ja) * 2003-03-18 2007-08-15 日本碍子株式会社 高熱伝導性放熱材及びその製造方法
DE202005008757U1 (de) * 2005-06-02 2006-10-12 Sts Spezial-Transformatoren-Stockach Gmbh & Co. Transformator
TWI449137B (zh) * 2006-03-23 2014-08-11 製陶技術創新製陶工程股份公司 構件或電路用的攜帶體
JP5048266B2 (ja) 2006-04-27 2012-10-17 株式会社アライドマテリアル 放熱基板とその製造方法
JP5081418B2 (ja) * 2006-08-28 2012-11-28 パナソニック株式会社 Ｌｅｄパッケージ
US20100206536A1 (en) * 2007-04-24 2010-08-19 Claus Peter Kluge Method for producing a composite including at least one non-flat component
JP5172232B2 (ja) * 2007-07-25 2013-03-27 電気化学工業株式会社 アルミニウム−セラミックス複合体とその製造方法
US20090250111A1 (en) * 2008-04-03 2009-10-08 Atomic Energy Counsil - Institute Of Nuclear Energy Research Solar cell dissipation package
DE102008024481B4 (de) 2008-05-21 2021-04-15 Tdk Electronics Ag Elektrische Bauelementanordnung
US7994646B2 (en) * 2008-12-17 2011-08-09 Infineon Technologies Ag Semiconductor device
JP2012119671A (ja) * 2010-11-11 2012-06-21 Kitagawa Ind Co Ltd 電子回路及びヒートシンク
JP2013098451A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Ind Ltd 半導体装置及び配線基板
WO2013119976A1 (en) * 2012-02-08 2013-08-15 Brewer Science Inc. Fluorinated silane coating compositions for thin wafer bonding and handling
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
CN104810328B (zh) 2014-01-28 2018-07-06 台达电子企业管理（上海）有限公司 封装外壳及具有该封装外壳的功率模块
TWI607587B (zh) * 2016-09-13 2017-12-01 台灣琭旦股份有限公司 固晶穩固製程
US11117839B2 (en) * 2019-04-24 2021-09-14 General Electric Company Densification of melt infiltrated ceramic matrix composite (CMC) articles
US11746064B2 (en) 2019-06-06 2023-09-05 General Electric Company Systems and methods for infiltrating porous ceramic matrix composite (CMC) preforms
CN112117250B (zh) * 2020-09-07 2022-07-01 矽磐微电子(重庆)有限公司 芯片封装结构及其制作方法

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Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US4786467A (en) 1983-06-06 1988-11-22 Dural Aluminum Composites Corp. Process for preparation of composite materials containing nonmetallic particles in a metallic matrix, and composite materials made thereby
JPH01115888A (ja) 1987-10-28 1989-05-09 Ibiden Co Ltd 半導体製造用治具の製造方法
US5000246A (en) 1988-11-10 1991-03-19 Lanxide Technology Company, Lp Flotation process for the formation of metal matrix composite bodies
JPH03153876A (ja) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd 炭化珪素質部材
JPH0784351B2 (ja) 1990-11-20 1995-09-13 旭硝子株式会社 半導体熱処理装置および半導体熱処理装置用高純度炭化珪素質部材とその製造方法
JPH08222660A (ja) 1995-02-09 1996-08-30 Hitachi Ltd 半導体装置
JPH08330465A (ja) 1995-06-01 1996-12-13 Hitachi Ltd 半導体装置およびそれを用いた電子装置
JPH09157773A (ja) 1995-10-03 1997-06-17 Hitachi Metals Ltd 低熱膨張・高熱伝導性アルミニウム複合材料及びその製造方法
JPH10194876A (ja) 1996-12-27 1998-07-28 Sumitomo Metal Ind Ltd 半導体用治具の製造方法
JPH1129379A (ja) 1997-02-14 1999-02-02 Ngk Insulators Ltd 半導体ヒートシンク用複合材料及びその製造方法
JPH11102379A (ja) * 1997-09-29 1999-04-13 Nec Corp 信号名の付与方法
JPH11228261A (ja) * 1998-02-03 1999-08-24 Taiheiyo Cement Corp ヒートシンク用材料及びその製造方法

Also Published As

Publication number Publication date
KR20010079642A (ko) 2001-08-22
US6737168B1 (en) 2004-05-18
DE60021514T2 (de) 2006-04-13
TWI229063B (en) 2005-03-11
JP4360061B2 (ja) 2009-11-11
EP1114807A4 (de) 2002-02-06
EP1114807B1 (de) 2005-07-27
WO2000076940A1 (fr) 2000-12-21
EP1114807A1 (de) 2001-07-11

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