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DE60018146D1 - Halbleiterphotodetektor - Google Patents

Halbleiterphotodetektor

Info

Publication number
DE60018146D1
DE60018146D1 DE60018146T DE60018146T DE60018146D1 DE 60018146 D1 DE60018146 D1 DE 60018146D1 DE 60018146 T DE60018146 T DE 60018146T DE 60018146 T DE60018146 T DE 60018146T DE 60018146 D1 DE60018146 D1 DE 60018146D1
Authority
DE
Germany
Prior art keywords
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60018146T
Other languages
English (en)
Other versions
DE60018146T2 (de
Inventor
Atsuhiko Kusakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Publication of DE60018146D1 publication Critical patent/DE60018146D1/de
Application granted granted Critical
Publication of DE60018146T2 publication Critical patent/DE60018146T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE60018146T 1999-12-10 2000-12-08 Halbleiterphotodetektor Expired - Lifetime DE60018146T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35108199 1999-12-10
JP35108199A JP3589920B2 (ja) 1999-12-10 1999-12-10 半導体受光素子

Publications (2)

Publication Number Publication Date
DE60018146D1 true DE60018146D1 (de) 2005-03-24
DE60018146T2 DE60018146T2 (de) 2005-12-29

Family

ID=18414924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60018146T Expired - Lifetime DE60018146T2 (de) 1999-12-10 2000-12-08 Halbleiterphotodetektor

Country Status (4)

Country Link
US (1) US6718108B2 (de)
EP (1) EP1107318B1 (de)
JP (1) JP3589920B2 (de)
DE (1) DE60018146T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4109159B2 (ja) * 2003-06-13 2008-07-02 浜松ホトニクス株式会社 半導体受光素子
KR100759805B1 (ko) * 2005-12-07 2007-09-20 한국전자통신연구원 광증폭 듀플렉서
JP2012118168A (ja) * 2010-11-30 2012-06-21 Mitsubishi Electric Corp 電界吸収型変調器及び光半導体装置
CN112331744B (zh) * 2021-01-06 2021-11-05 武汉光谷信息光电子创新中心有限公司 一种光电探测器的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0437836B1 (de) * 1989-12-27 1995-05-17 Nec Corporation Optische Halbleitervorrichtung
JP2847205B2 (ja) 1991-01-14 1999-01-13 日本電信電話株式会社 半導体導波路型受光素子
JP2711052B2 (ja) 1992-10-02 1998-02-10 日本電信電話株式会社 半導体導波路型光検出器
US5608230A (en) * 1992-12-21 1997-03-04 The Furukawa Electric Co., Ltd. Strained superlattice semiconductor photodetector having a side contact structure
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
JP3751052B2 (ja) * 1994-12-28 2006-03-01 シャープ株式会社 集積型光制御素子およびその作製方法、並びにそれを備えた光集積回路素子および光集積回路装置
JPH08330673A (ja) * 1995-06-02 1996-12-13 Fujitsu Ltd 光半導体装置
JPH1022520A (ja) * 1996-06-28 1998-01-23 Nec Corp 半導体受光素子及びその製造方法
JPH1090540A (ja) * 1996-09-17 1998-04-10 Hitachi Ltd 半導体受光素子、半導体受光装置および半導体装置
EP0889529A1 (de) * 1997-07-01 1999-01-07 Nec Corporation Lichtempfindliches Halbleiterbauelement und Verfahren zu dessen Herstellung
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
US6282219B1 (en) * 1998-08-12 2001-08-28 Texas Instruments Incorporated Substrate stack construction for enhanced coupling efficiency of optical couplers

Also Published As

Publication number Publication date
US20010012432A1 (en) 2001-08-09
EP1107318A3 (de) 2003-08-06
JP3589920B2 (ja) 2004-11-17
EP1107318B1 (de) 2005-02-16
JP2001168373A (ja) 2001-06-22
US6718108B2 (en) 2004-04-06
DE60018146T2 (de) 2005-12-29
EP1107318A2 (de) 2001-06-13

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Legal Events

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8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

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