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DE60005659D1 - Mit barium dotierte siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren - Google Patents

Mit barium dotierte siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren

Info

Publication number
DE60005659D1
DE60005659D1 DE60005659T DE60005659T DE60005659D1 DE 60005659 D1 DE60005659 D1 DE 60005659D1 DE 60005659 T DE60005659 T DE 60005659T DE 60005659 T DE60005659 T DE 60005659T DE 60005659 D1 DE60005659 D1 DE 60005659D1
Authority
DE
Germany
Prior art keywords
meltic
barium
doped
melt
crystal growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60005659T
Other languages
English (en)
Other versions
DE60005659T2 (de
Inventor
J Phillips
J Keltner
D Holder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE60005659D1 publication Critical patent/DE60005659D1/de
Publication of DE60005659T2 publication Critical patent/DE60005659T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE60005659T 1999-03-15 2000-03-14 Mit barium dotierte siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren Expired - Lifetime DE60005659T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12440099P 1999-03-15 1999-03-15
US124400P 1999-03-15
US09/521,288 US6319313B1 (en) 1999-03-15 2000-03-08 Barium doping of molten silicon for use in crystal growing process
US521288 2000-03-08
PCT/US2000/006565 WO2000055394A1 (en) 1999-03-15 2000-03-14 Barium doping of molten silicon for use in crystal growing process

Publications (2)

Publication Number Publication Date
DE60005659D1 true DE60005659D1 (de) 2003-11-06
DE60005659T2 DE60005659T2 (de) 2004-08-12

Family

ID=26822543

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60005659T Expired - Lifetime DE60005659T2 (de) 1999-03-15 2000-03-14 Mit barium dotierte siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren

Country Status (8)

Country Link
US (2) US6319313B1 (de)
EP (1) EP1175519B1 (de)
JP (1) JP4560216B2 (de)
KR (1) KR100719821B1 (de)
CN (1) CN1166822C (de)
DE (1) DE60005659T2 (de)
TW (1) TWI241365B (de)
WO (1) WO2000055394A1 (de)

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KR20120090030A (ko) * 2009-07-16 2012-08-16 엠이엠씨 싱가포르 피티이. 엘티디. 코팅된 도가니 및 그의 제조 방법 및 용도
JP5500684B2 (ja) * 2010-06-25 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法
US9221709B2 (en) * 2011-03-31 2015-12-29 Raytheon Company Apparatus for producing a vitreous inner layer on a fused silica body, and method of operating same
US20120267280A1 (en) * 2011-04-25 2012-10-25 Glen Bennett Cook Vessel for molten semiconducting materials and methods of making the same
EP2616575A4 (de) * 2011-05-25 2015-05-20 Saint Gobain Res Shanghai Co Ltd Silicatiegel und herstellungsverfahren dafür
JP5509188B2 (ja) 2011-12-26 2014-06-04 ジルトロニック アクチエンゲゼルシャフト 単結晶シリコンの製造方法
NO339608B1 (no) 2013-09-09 2017-01-09 Elkem Solar As Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller
NO336720B1 (no) * 2013-09-09 2015-10-26 Elkem Solar As Fremgangsmåte for forbedring av effektiviteten av solceller.
US20190062943A1 (en) * 2016-03-23 2019-02-28 Momentive Performance Materials Inc. Devitrification agent for quartz glass crucible crystal growing process
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN107604437A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 在石英坩埚中制备硅熔融体的方法
CN109056055B (zh) * 2018-09-28 2020-11-03 包头美科硅能源有限公司 一种单晶硅棒的生产方法
CN109267149A (zh) * 2018-11-29 2019-01-25 内蒙古中环光伏材料有限公司 一种石英坩埚及控制碳酸钡用量的方法
DE102020000701A1 (de) * 2020-02-03 2021-08-05 Siltronic Ag Quarzglastiegel zur Herstellung von Siliciumkristallen und Verfahren zur Herstellung von Quarzglastiegel
CN114368901B (zh) * 2021-12-28 2023-09-26 无锡市尚领石英科技有限公司 高良品率加厚型单晶石英坩埚及其制备工艺

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Also Published As

Publication number Publication date
KR100719821B1 (ko) 2007-05-18
KR20010113746A (ko) 2001-12-28
JP4560216B2 (ja) 2010-10-13
WO2000055394A1 (en) 2000-09-21
US6461427B2 (en) 2002-10-08
JP2002539068A (ja) 2002-11-19
CN1343265A (zh) 2002-04-03
DE60005659T2 (de) 2004-08-12
TWI241365B (en) 2005-10-11
WO2000055394A8 (en) 2001-02-08
US6319313B1 (en) 2001-11-20
CN1166822C (zh) 2004-09-15
EP1175519B1 (de) 2003-10-01
US20010032580A1 (en) 2001-10-25
EP1175519A1 (de) 2002-01-30

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