DE3883697D1 - Flüssigkristall-Anzeigevorrichtung. - Google Patents
Flüssigkristall-Anzeigevorrichtung.Info
- Publication number
- DE3883697D1 DE3883697D1 DE88308178T DE3883697T DE3883697D1 DE 3883697 D1 DE3883697 D1 DE 3883697D1 DE 88308178 T DE88308178 T DE 88308178T DE 3883697 T DE3883697 T DE 3883697T DE 3883697 D1 DE3883697 D1 DE 3883697D1
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- crystal display
- liquid
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260694A JPH01102434A (ja) | 1987-10-15 | 1987-10-15 | マトリックス型液晶表示パネル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3883697D1 true DE3883697D1 (de) | 1993-10-07 |
| DE3883697T2 DE3883697T2 (de) | 1994-02-24 |
Family
ID=17351478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE88308178T Expired - Fee Related DE3883697T2 (de) | 1987-10-15 | 1988-09-02 | Flüssigkristall-Anzeigevorrichtung. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4991939A (de) |
| EP (1) | EP0313199B1 (de) |
| JP (1) | JPH01102434A (de) |
| DE (1) | DE3883697T2 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2620240B2 (ja) * | 1987-06-10 | 1997-06-11 | 株式会社日立製作所 | 液晶表示装置 |
| JPH0814668B2 (ja) * | 1988-02-16 | 1996-02-14 | シャープ株式会社 | マトリックス型液晶表示パネル |
| JP2650780B2 (ja) * | 1990-11-30 | 1997-09-03 | シャープ株式会社 | アクティブマトリクス基板 |
| US5287206A (en) * | 1990-11-30 | 1994-02-15 | Sharp Kabushiki Kaisha | Active matrix display device |
| US5303074A (en) * | 1991-04-29 | 1994-04-12 | General Electric Company | Embedded repair lines for thin film electronic display or imager devices |
| JPH05243579A (ja) * | 1992-02-28 | 1993-09-21 | Canon Inc | 半導体装置 |
| JP2823178B2 (ja) * | 1992-04-06 | 1998-11-11 | シャープ株式会社 | 金属配線基板及びその製造方法 |
| EP0582387B1 (de) * | 1992-08-05 | 1999-05-26 | Sharp Kabushiki Kaisha | Metallische Leiterplatte und Herstellungsverfahren dafür |
| JP2915732B2 (ja) * | 1993-02-01 | 1999-07-05 | シャープ株式会社 | アクティブマトリクス基板 |
| EP0685113B1 (de) * | 1993-12-20 | 1999-11-03 | General Electric Company | Verfahren zur reparatur einer leitung eines dünnfilm-bildsensors oder einer dünnfilm-anzeige und die dadurch hergestellte struktur |
| US5486485A (en) * | 1994-02-18 | 1996-01-23 | Philip Electronics North America Corporation | Method of manufacturing a reflective display |
| US6383899B1 (en) | 1996-04-05 | 2002-05-07 | Sharp Laboratories Of America, Inc. | Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation |
| JP4034479B2 (ja) * | 1999-07-07 | 2008-01-16 | エルジー フィリップス エルシーディー カンパニー リミテッド | 薄膜トランジスタ基板および液晶表示装置 |
| JP4596101B2 (ja) * | 2000-10-18 | 2010-12-08 | 日本電気株式会社 | 液晶表示装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1121489A (en) * | 1979-05-30 | 1982-04-06 | Northern Telecom Limited | Lcds (liquid crystal displays) controlled by mims (metal-insulator-metal) devices |
| DE3113041A1 (de) * | 1980-04-01 | 1982-01-28 | Canon K.K., Tokyo | Verfahren und vorrichtung zur anzeige von informationen |
| JPS60140926U (ja) * | 1984-02-24 | 1985-09-18 | 三洋電機株式会社 | 表示装置 |
| JPS616729A (ja) * | 1984-06-20 | 1986-01-13 | Sharp Corp | 情報入出力装置 |
| EP0196915B1 (de) * | 1985-03-29 | 1991-08-14 | Matsushita Electric Industrial Co., Ltd. | Dünnschicht-Transistorenanordnung und Methode zu deren Herstellung |
| US4705358A (en) * | 1985-06-10 | 1987-11-10 | Seiko Instruments & Electronics Ltd. | Substrate for active matrix display |
| FR2585167B1 (fr) * | 1985-07-19 | 1993-05-07 | Gen Electric | Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince |
| JPH0713715B2 (ja) * | 1987-01-22 | 1995-02-15 | ホシデン株式会社 | カラ−液晶表示素子 |
-
1987
- 1987-10-15 JP JP62260694A patent/JPH01102434A/ja active Granted
-
1988
- 1988-09-02 EP EP88308178A patent/EP0313199B1/de not_active Expired - Lifetime
- 1988-09-02 DE DE88308178T patent/DE3883697T2/de not_active Expired - Fee Related
-
1990
- 1990-02-28 US US07/486,359 patent/US4991939A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0313199B1 (de) | 1993-09-01 |
| US4991939A (en) | 1991-02-12 |
| JPH0569409B2 (de) | 1993-10-01 |
| EP0313199A1 (de) | 1989-04-26 |
| DE3883697T2 (de) | 1994-02-24 |
| JPH01102434A (ja) | 1989-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |