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DE3378662D1 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
DE3378662D1
DE3378662D1 DE8383112422T DE3378662T DE3378662D1 DE 3378662 D1 DE3378662 D1 DE 3378662D1 DE 8383112422 T DE8383112422 T DE 8383112422T DE 3378662 T DE3378662 T DE 3378662T DE 3378662 D1 DE3378662 D1 DE 3378662D1
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor integrated
voltage
circuit
ordinary operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383112422T
Other languages
English (en)
Inventor
Ryoichi Hori
Kiyoo Itoh
Hitoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd Tokio/tokyo Jp Hitachi Microcomput
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3378662D1 publication Critical patent/DE3378662D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Dram (AREA)
DE8383112422T 1982-12-17 1983-12-09 Semiconductor integrated circuit Expired DE3378662D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57220083A JPS59111514A (ja) 1982-12-17 1982-12-17 半導体集積回路

Publications (1)

Publication Number Publication Date
DE3378662D1 true DE3378662D1 (en) 1989-01-12

Family

ID=16745660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383112422T Expired DE3378662D1 (en) 1982-12-17 1983-12-09 Semiconductor integrated circuit

Country Status (5)

Country Link
US (1) US4916389A (de)
EP (1) EP0113865B1 (de)
JP (1) JPS59111514A (de)
KR (1) KR920004653B1 (de)
DE (1) DE3378662D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5566185A (en) * 1982-04-14 1996-10-15 Hitachi, Ltd. Semiconductor integrated circuit
JPS61155913U (de) * 1985-03-19 1986-09-27
JPH0770216B2 (ja) * 1985-11-22 1995-07-31 株式会社日立製作所 半導体集積回路
KR950001424B1 (en) * 1986-03-28 1995-02-24 Hitachi Ltd 3-transistor dynamic random access memory
CA1317344C (en) * 1988-12-21 1993-05-04 National Semiconductor Corporation Bicmos positive supply voltage reference
US5149988A (en) * 1988-12-21 1992-09-22 National Semiconductor Corporation BICMOS positive supply voltage reference
JP2809768B2 (ja) * 1989-11-30 1998-10-15 株式会社東芝 基準電位発生回路
NL9001017A (nl) * 1990-04-27 1991-11-18 Philips Nv Bufferschakeling.
KR100209449B1 (ko) * 1990-05-21 1999-07-15 가나이 쓰토무 반도체 집적회로 장치
KR100231393B1 (ko) * 1991-04-18 1999-11-15 나시모토 류조 반도체집적회로장치
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
FR2680586B1 (fr) * 1991-08-19 1994-03-11 Samsung Electronics Co Ltd Circuit generateur de tension d'alimentation interne programmable electriquement.
KR950012018B1 (ko) * 1992-05-21 1995-10-13 삼성전자주식회사 반도체장치의 내부전원 발생회로
US5696452A (en) * 1995-08-08 1997-12-09 Harris Corporation Arrangement and method for improving room-temperature testability of CMOS integrated circuits optimized for cryogenic temperature operation
DE19716430A1 (de) * 1997-04-18 1998-11-19 Siemens Ag Schaltungsanordnung zur Erzeugung einer internen Versorgungsspannung
KR100272508B1 (ko) * 1997-12-12 2000-11-15 김영환 내부전압(vdd) 발생회로
JP3088403B2 (ja) * 1999-01-11 2000-09-18 ファナック株式会社 機械の消費電力表示装置
DE10011670A1 (de) * 2000-03-10 2001-09-20 Infineon Technologies Ag Schaltungsanordnung, insbesondere Bias-Schaltung
WO2005010629A1 (ja) * 2003-07-28 2005-02-03 Koninklijke Philips Electronics N.V. 電圧変換装置
JP4059874B2 (ja) 2004-09-30 2008-03-12 富士通株式会社 整流回路
US7495519B2 (en) * 2007-04-30 2009-02-24 International Business Machines Corporation System and method for monitoring reliability of a digital system

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA556448A (en) * 1949-09-27 1958-04-22 L. Harder Edwin Adjustable non-linear resistance
US3386030A (en) * 1964-10-21 1968-05-28 Collins Radio Co Voltage regulator
US3523195A (en) * 1967-06-07 1970-08-04 Bendix Corp Function generator network utilizing a transistor including a multiple tap emitter follower
US3553487A (en) * 1967-10-12 1971-01-05 Honeywell Inc Circuit for generating discontinuous functions
US3588675A (en) * 1968-03-29 1971-06-28 Meidensha Electric Mfg Co Ltd Voltage regulator circuit effective over predetermined input range
GB1343251A (en) * 1971-03-15 1974-01-10 Matsushita Electronics Corp Dc voltage regulator circuit
JPS5821208B2 (ja) * 1978-09-30 1983-04-27 株式会社島津製作所 リニアライザ
DE2962107D1 (en) * 1978-12-23 1982-03-18 Fujitsu Ltd Semiconductor integrated circuit device including a reference voltage generator feeding a plurality of loads
JPS566098U (de) * 1979-06-21 1981-01-20
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
JPS57172761A (en) * 1981-04-17 1982-10-23 Hitachi Ltd Semiconductor integrated circuit
JPS57186351A (en) * 1981-05-12 1982-11-16 Fujitsu Ltd Semiconductor device
FR2506045A1 (fr) * 1981-05-15 1982-11-19 Thomson Csf Procede et dispositif de selection de circuits integres a haute fiabilite
DE3124188C2 (de) * 1981-06-19 1986-04-03 TRW Repa GmbH, 7077 Alfdorf Gurtband-Klemmvorrichtung für Sicherheitsgurte in Kraftfahrzeugen
JPS58105563A (ja) * 1981-12-17 1983-06-23 Mitsubishi Electric Corp 基板バイアス発生回路
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS59191935A (ja) * 1983-04-15 1984-10-31 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPH0567965B2 (de) 1993-09-28
JPS59111514A (ja) 1984-06-27
US4916389A (en) 1990-04-10
EP0113865B1 (de) 1988-12-07
EP0113865A1 (de) 1984-07-25
KR840007309A (ko) 1984-12-06
KR920004653B1 (ko) 1992-06-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HITACHI, LTD., TOKIO/TOKYO, JP HITACHI MICROCOMPUT