DE3128979A1 - Method for preparing silicon which can be used for solar cells - Google Patents
Method for preparing silicon which can be used for solar cellsInfo
- Publication number
- DE3128979A1 DE3128979A1 DE19813128979 DE3128979A DE3128979A1 DE 3128979 A1 DE3128979 A1 DE 3128979A1 DE 19813128979 DE19813128979 DE 19813128979 DE 3128979 A DE3128979 A DE 3128979A DE 3128979 A1 DE3128979 A1 DE 3128979A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- impurities
- solar cells
- carried out
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 239000007858 starting material Substances 0.000 claims abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052796 boron Inorganic materials 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 150000002366 halogen compounds Chemical class 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000001746 injection moulding Methods 0.000 claims description 2
- 238000002386 leaching Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 235000011121 sodium hydroxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000005507 spraying Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Verfahren zum Herstellen von für Solarzellen verwendbaremMethod of manufacturing that which can be used for solar cells
Silizium.Silicon.
Die vorliegende Patentanmeldung betrifft ein Verfahren zum Herstellen von für Solarzellen verwendbarem Silizium durch Aufbereitung von Siliziumdioxid (SiO2) technischer Qualität mittels des Lichtbogenverfahrens.The present patent application relates to a method of manufacturing of silicon that can be used for solar cells by processing silicon dioxide (SiO2) technical quality using the arc process.
Für die Herstellung kristalliner Silizium-Solarzellen wird hochreines Silizium als Grundmaterial verwendet, welches aus Silikochloroform (SiHCl3) oder Siliziumtetrachlorid (SiCl4) durch Abscheidung aus der Gasphase gewonnen werden kann. Dieses Abscheideverfahren führt zu Silizium hoher Reinheit, welches für die Herstellung von großflächigen Solarzellen zu teuer ist.For the production of crystalline silicon solar cells, high-purity is used Silicon used as the base material, which is made from silicochloroform (SiHCl3) or Silicon tetrachloride (SiCl4) can be obtained by deposition from the gas phase can. This deposition process leads to silicon of high purity, which for the Production of large area solar cells is too expensive.
Aus dem Journal of Electrochem. Soc. 123 (1978) ist aus einem Aufsatz von T. L. Chu et al auf den Seiten 661 bis 665 ein Verfahren zu entnehmen, bei dem technisches Silizium im schmelzflüssigen Zustand mit reaktiven Gasen, z. B. Chlor und Sauerstoff durchperlt wird, wobei durch diese Hochtemperaturgasbehandlung die im Silizium vorhandenen Verunreinigungen (Eisen, Nickel, Titan, Chrom, Phosphor, usw.) als flüchtige Chloride aus der Siliziumschmelze entfernt werden. Auf diese Weise läßt sich z. B.From the Journal of Electrochem. Soc. 123 (1978) is from an essay by T. L. Chu et al on pages 661 to 665 to find a method in which technical silicon in the molten state with reactive gases, e.g. B. chlorine and oxygen is bubbled through, whereby by this high-temperature gas treatment the Impurities present in the silicon (iron, nickel, titanium, chromium, phosphorus, etc.) are removed from the silicon melt as volatile chlorides. To this Way can z. B.
der Eisengehalt in technischem Silizium von 3000 ppm auf ca. 80 ppm absenken. Das so gereinigte Silizium besitzt jedoch noch einen zu hohen Verunreinigungspegel und muß deshalb durch mindestens einen Kristallziehprozeß (Czochralski) nachgereinigt werden, wodurch das Verfahren wieder teuer wird.the iron content in technical silicon from 3000 ppm to approx. 80 ppm lower. The silicon cleaned in this way, however, still has too high an impurity level and must therefore be cleaned by at least one crystal pulling process (Czochralski) which makes the process expensive again.
Aus der DE-OS 27 22 783 ist ein-weiteres Verfahren zum Reinigen von Silizium mit einem Siliziumgehalt von 95 % bekannt, bei dem das technische Silizium zunächst fein zermahlen und anschließend oder gleichzeitig mit Säurelösung behandelt wird. Diesem chemomechanischen Reinigungsschritt, bei dem ein Teil der Verunreinigungen aus dem Siliziumgranulat gelöst werden, muß aber auch noch zur Erzielung der für Solarzellen erforderlichen Qualität ein Kristallziehprozeß angeschlossen werden, wodurch auch dieses Verfahren wieder verteuert wird.From DE-OS 27 22 783 is another method for cleaning Silicon with a silicon content of 95% is known, in which the technical silicon first finely grind and then or at the same time treated with an acid solution will. This chemomechanical cleaning step in which some of the impurities be solved from the silicon granules, but must also still to achieve the for Solar cells required quality can be connected to a crystal pulling process, whereby this process is again made more expensive.
Die Aufgabe, die der vorliegenden Erfindung zugrundeliegt, besteht in der kostengünstigen Herstellung von für Soiarzellen geeignetem Silizium, wobei als Ausgangsmaterial Siliziumdioxid (SiO2) technischer Qualität ( 98,5 %) verwendet wird.The object on which the present invention is based exists in the cost-effective production of silicon suitable for solar cells, whereby technical grade silicon dioxide (SiO2) (98.5%) is used as the starting material will.
Diese Aufgabe wird durch ein Verfahren der eingangs genannten Art dadurch gelöst, daß a) als Ausgangsmaterial für die Reduktion im Lichtbogen SiO2 und Kohle mit geringem Borgehalt verwendet werden, b) das nach der Reduktion erhaltene schmelzlüssige Silizium in einem Siliziumkörper mit Folienstruktur übergeführt wird, wobei der Abkühlprozeß so geführt wird, daß die Dicke der Siliziumfolie der Korngröße des Siliziumkristalles entspricht, c) die Siliziumfolie, gegebenenfalls nach ihrer Zerteilung, in Inertgasatmosphäre getemptert wird und d) die getemperten Siliziumkörper zur Abtrennung der an den Korngrenzen angereicherten Verunreinigungen einen für Silizium im wesentlichen nicht wirksamen chemischen Abtragprozeß unterworfen werden.This task is carried out by a method of the type mentioned at the beginning solved in that a) as the starting material for the reduction in the arc SiO2 and low boron coal can be used, b) that obtained after reduction molten silicon is transferred into a silicon body with a film structure, the cooling process being carried out so that the thickness of the silicon foil corresponds to the grain size of the silicon crystal corresponds, c) the silicon film, optionally after its Division, is emptied in an inert gas atmosphere and d) the tempered silicon body to separate the impurities accumulated at the grain boundaries one for Silicon are essentially not subjected to effective chemical removal processes.
Dabei liegt es im Rahmen des Erfindungsgedankens, daß die Überführung in die Folienstruktur durch das Bandspritzverfahren erfolgt, wobei das schmelzflüssige Silizium auf eine gekühlte Abzugstrommel gespritzt und die Abzugsgeschwindigkeit auf 20 bis 40 m/s, vorzugsweise auf 30 m/s eingestellt wird. Das Silizium erstarrt bei diesem Verfahren homogen in feinkristalliner Form (Korngröße 10 bis 20 /um) auf der gekühlten Abzugstrommel. Länge und Breite der Folie können frei gewählt werden. Einzelheiten über das Bandspritzverfahren sind einem Aufsatz von Tsuja et al aus dem J. Electr. Mat. 9 (1980) Nr. I auf den Seiten 111 bis 128 zu entnehmen.It is within the scope of the inventive concept that the transfer into the film structure by the tape injection molding process, whereby the molten Silicon sprayed onto a cooled haul-off drum and the haul-off speed is set to 20 to 40 m / s, preferably to 30 m / s. The silicon solidifies in this process homogeneous in fine crystalline form (grain size 10 to 20 μm) on the cooled haul-off drum. The length and width of the film can be freely selected will. Details about the tape spray method are an article by Tsuja et al from the J. Electr. Mat. 9 (1980) No. I on pages 111 to 128 can be found.
Gemäß einem Ausführungsbeispiel nach der Lehre der Erfindung wird der Temperprozeß im Bereich von 800 bis 12000C durchgeführt, wobei vorzugsweise eine Argonatmosphäre verwendet wird. Beim Temperprozeß kommt es zu einer Anreicherung der Verunreinigungen an den Korngrenzen.According to an embodiment according to the teaching of the invention the tempering process carried out in the range from 800 to 12000C, preferably an argon atmosphere is used. Enrichment occurs during the tempering process the impurities at the grain boundaries.
In einer Weiterbildung des Erfindungsgedankens ist vorgesehen, die Abtragung der Verunreinigungen aus dem Siliziumkörper in einer Salzsäure, Chlor und/oder Sauerstoff enthaltenden Atmosphäre über flüchtige Halogenverbindungen durch einen Gasätzprozeß bei 1000 bis 12000C vorzunehmen. Einige metallische Verunreinigungen (z. B. Nickel, Eisen, u. a.) lassen sich mit Kohlenmonoxid als Carbonyle bei erheblich tieferen Temperaturen (z. B. Nickel bei 800C) verflüchtigen. Es ist aber auch möglich, die Verunreinigungen aus dem Siliziumkörper durch ein Auslaugverfahren in heißen Säuren und/oder Laugen zu entfernen, wobei 3n bis 6n Lösungen von Salzsäure, Salpetersäure, Flußsäure oder Gemische davon oder verdünnte Natron- oder Kalilauge verwendet werden. Bei der Ätzbehandlung werden in jedem Fall die an den Korngrenzen angereicherten Verunreinigungen aus dem Silizium entfernt. Durch die Wahl der Prozeßparameter beim Bandspritzverfahren muß darauf geachtet werden, daß die Dicke der Folie dFolie « dKristallit ist, so daß die Korngrenzen mit den Verunreinigungen dem Angriff des reaktiven Gases oder Lösungsmittels frei zugänglich sind.In a further development of the inventive concept it is provided that Removal of the impurities from the silicon body in a hydrochloric acid, chlorine and / or oxygen-containing atmosphere through volatile halogen compounds to carry out a gas etching process at 1000 to 12000C. Some metallic impurities (e.g. nickel, iron, etc.) can be significantly reduced with carbon monoxide as carbonyls volatilize at lower temperatures (e.g. nickel at 800C). But it is also possible the impurities from the silicon body by a leaching process in hot To remove acids and / or bases, whereby 3n to 6n solutions of hydrochloric acid, nitric acid, Hydrofluoric acid or mixtures thereof or dilute sodium or potassium hydroxide solution can be used. In the etching treatment, the grain boundaries are always enriched Removes impurities from the silicon. By choosing the process parameters at the The tape spraying process must ensure that the thickness of the film d dCrystallite, so that the grain boundaries with the impurities can be attacked by the reactive gas or solvent are freely accessible.
Abschließend wird der Siliziumkörper in die für die Solarzellen-Weiterverarbeitung geeignete Form umgeschmolzen.Finally, the silicon body is used for further processing of the solar cells appropriate shape remelted.
Die wesentlichen Verfahrensschritte sind in einem Flußdiagramm der in der Zeichnung befindlichen Figur zu entnehmen.The essential process steps are shown in a flow chart of to be found in the drawing figure.
8 Patentansprüche 1 Figur8 claims 1 figure
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813128979 DE3128979C2 (en) | 1981-07-22 | 1981-07-22 | Process for the production of silicon which can be used for solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813128979 DE3128979C2 (en) | 1981-07-22 | 1981-07-22 | Process for the production of silicon which can be used for solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3128979A1 true DE3128979A1 (en) | 1983-02-10 |
| DE3128979C2 DE3128979C2 (en) | 1986-10-23 |
Family
ID=6137498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813128979 Expired DE3128979C2 (en) | 1981-07-22 | 1981-07-22 | Process for the production of silicon which can be used for solar cells |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3128979C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0548504A3 (en) * | 1991-10-29 | 1993-12-01 | Hi Silicon Co Ltd | Process for cleaning silicon mass |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US561405A (en) * | 1896-06-02 | Ice-velocipede | ||
| DE966879C (en) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Process for cleaning and / or removal of semiconductor material, in particular germanium and silicon substances |
| DE2722783A1 (en) * | 1977-05-20 | 1978-11-30 | Wacker Chemitronic | METHOD OF CLEANING SILICON |
| JPS54127876A (en) | 1978-03-27 | 1979-10-04 | Sharp Corp | Manufacture of continuous belt-like crystal |
| DE2935397A1 (en) * | 1978-09-07 | 1980-03-20 | Itt Ind Gmbh Deutsche | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR MATERIAL |
| DE3013319A1 (en) * | 1979-04-11 | 1980-10-16 | Dow Corning | METHOD FOR PRODUCING SUITABLE SILICON FOR SOLAR CELLS |
| DE2927086A1 (en) * | 1979-07-04 | 1981-01-22 | Siemens Ag | METHOD FOR THE PRODUCTION OF PLATE- OR RIBBON-SHAPED SILICON CRYSTAL BODIES WITH A COLUMNAR STRUCTURE EQUIVALENT COLUMN STRUCTURE FOR SOLAR CELLS |
| DE3000802A1 (en) * | 1980-01-11 | 1981-07-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Silicon prodn. by decomposition or redn. of silicon cpd. in plasma - produced in carrier gas stream gives pure silicon at very low cost |
| DE3000889A1 (en) * | 1980-01-11 | 1981-07-30 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING SOLAR CELLS |
-
1981
- 1981-07-22 DE DE19813128979 patent/DE3128979C2/en not_active Expired
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US561405A (en) * | 1896-06-02 | Ice-velocipede | ||
| DE966879C (en) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Process for cleaning and / or removal of semiconductor material, in particular germanium and silicon substances |
| DE2722783A1 (en) * | 1977-05-20 | 1978-11-30 | Wacker Chemitronic | METHOD OF CLEANING SILICON |
| JPS54127876A (en) | 1978-03-27 | 1979-10-04 | Sharp Corp | Manufacture of continuous belt-like crystal |
| DE2935397A1 (en) * | 1978-09-07 | 1980-03-20 | Itt Ind Gmbh Deutsche | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR MATERIAL |
| DE3013319A1 (en) * | 1979-04-11 | 1980-10-16 | Dow Corning | METHOD FOR PRODUCING SUITABLE SILICON FOR SOLAR CELLS |
| DE2927086A1 (en) * | 1979-07-04 | 1981-01-22 | Siemens Ag | METHOD FOR THE PRODUCTION OF PLATE- OR RIBBON-SHAPED SILICON CRYSTAL BODIES WITH A COLUMNAR STRUCTURE EQUIVALENT COLUMN STRUCTURE FOR SOLAR CELLS |
| DE3000802A1 (en) * | 1980-01-11 | 1981-07-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Silicon prodn. by decomposition or redn. of silicon cpd. in plasma - produced in carrier gas stream gives pure silicon at very low cost |
| DE3000889A1 (en) * | 1980-01-11 | 1981-07-30 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING SOLAR CELLS |
Non-Patent Citations (6)
| Title |
|---|
| Bogenschütz: Ätzpraxis für Halbleiter, 1967, 189, 193 * |
| DE-Z: Elektronik, Nr. 8, 1981, 16 * |
| JP-OS 1 27 876-79 Abstr. * |
| Proceedings of the 2. EC-Photovoltaic Solar Energy Conference, 1979, 84-97 * |
| Rast, R.: Silicium als Halbleiter, 1966, S. 18, 19 * |
| US-Z: J.Electrochem.Soc., 118, 1971, 141-143 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0548504A3 (en) * | 1991-10-29 | 1993-12-01 | Hi Silicon Co Ltd | Process for cleaning silicon mass |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3128979C2 (en) | 1986-10-23 |
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