DE3035933A1 - PYROELECTRIC DETECTOR AND METHOD FOR PRODUCING SUCH A DETECTOR - Google Patents

Description

PATENT LAWYERS F.W. HEMMERICH · 3ERD MÜLLER - D. GPObSF · F. POLLMEIER 73

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303§ ° 93 "3- ⁸⁰

Tokyo Shibaura Denki Kabushiki Kaishai, 72 Horikawacho, Saiwai-ku, Kawasaki-shi, Kanagawa-ken (Japan)

Pyroelectric detector and method to manufacture such a detector

The subject of this invention is a measuring system which uses the pyroelectric effect to generate infrared rays has to measure and record. However, the subject matter of this invention is also a method for the production of such a pyroelectric detector system.

It is generally true that in pyroelectric detector systems Pyroelectric substances are used and that the py.roel ektri see effect of this pyroelectric Substances are used to measure and record infrared rays. But has the pyroelectric Material has a high heat absorption capacity, then this .pyroelectric material can be used do not address rapid changes in the energy of the infrared rays. Therefore, after the hitherto known prior art for reducing the heat absorption capacity of pyroelectric substances also used very different technical processes, including, for example, the Reducing the thickness of pyroelectric material to around 30 to 50 to.

According to the prior art known to date, however, a reduction in the heat absorption capacity can occur can also be achieved by exposing the pyroelectric material to the surrounding air and is mounted on a heat-insulated base layer.

130015/0982

- 2 ORIGINAL INSPECTED

PATENT LAWYERS F.W. HEMMERICH ■ GERD MÖLLER · Ü. GPObSF F. POLLMEIER 73

- bh 20.9.1980

3035333-

One of the technical processes with which the pyroelectric Material is exposed to the surrounding air is shown in FIG. 1. Here is a piezoelectric Crystal 3 is mounted on a frame 5 using wires 4 and 4 ′. The electrode 1 that absorb and receive the infrared rays and the shield electrode 2 are different from the piezoelectric crystal 3 Pages assigned. Despite lowering or reducing the heat absorption capacity, the one with FIG. 1 The pyrolytic detector shown is not reliable or wear-resistant in the long term. Furthermore can this pyroelectric detector because the pyroelectric crystal 3 is so thin, only very difficult to manufacture and handle.

Another method known from the prior art is shown in FIG. The shielding electrode 2, which is worked up on one side of the piezoelectric crystal 3, is connected to a thermally insulated base plate 6, which in turn is on a frame 5 is mounted. The pyroelectric detector shown in FIG. 2 has the disadvantage that the wire 4 is difficult to be connected to the shield electrode 2.

Fig. 3 now shows yet another structural design that is related to the Japanese patent description No. 12272/1976 (Tokkosho) has been described and explained. With this construction is the shielding electrode 2 is thermally insulated

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ORIGINAL INSPECTED

PATENT LAWYERS F.W. HEMMERICH · GERD MÜLLER · Ü. GPObSF F. POLLMEIER 73

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3035333

lated base layer 6 angeordne.t and glued to the frame 5 using an electrically conductive adhesive. The heat-insulated base _{layer 6 is coated with an insulating layer 7 consisting of zinc oxide (ZnO 2} ), which in turn means that the shielding electrode 2 does not need to be connected to the frame 5 with a wire 4. In this case, however, the piezoelectric crystal 3 is mounted on the base layer 6, and this in turn has the consequence that the heat absorption capacity is so great that the detector cannot respond to rapid changes in the energy supply of the infrared rays. In this case, too, a very thin pyrolytic crystal 3 has to be built in, which makes the manufacture and treatment of this detector very difficult.

The invention thus has the following tasks:

To create a pyroelectrically working detector that also reacts to rapid changes in energy come from infrared rays.

To create a pyroelectric detector that is better and more powerful in construction is executed, which is highly wear-resistant and which can work with great reliability.

To develop an improved method for the manufacture of pyroelectric detector systems and to create using very thin pyroelectric material. So that

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PATENT LAWYERS F.W. HEMMERICK · GERD MÜLLER ■ ü. GROSSt F. POLLMEIER 73

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■ 9 ·

also tied to develop and create a process that is easy and simple for mass production can be deployed and used by pyroelectric detector systems.

In achieving the aforementioned and other objectives, the invention solves the problem set in that it provides an improved pyroelectric detector. To this Pyroelectric detector include: Pyroelectric Material; one arranged on one surface of the pyroelectric material and mounted receiving electrode for receiving and receiving infrared rays; one to the other Face of the pyroelectric material placed and mounted shield electrode; one Base layer made of semiconductor material or of electrically conductive material and in which a hole is machined that is wider than the infrared radiation receiving and receiving electrode is, with base layer and shield electrode using an electrically conductive Adhesive are bonded together, further using the base layer electrically conductive adhesive is attached to a holding element.

In implementing the stated objectives and other objectives, the invention solves yours set the task still further in that they are used for the production of pyroelectrically working Detectors has also developed and provides for various manufacturing processes.

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PATENT Attorneys FW HEMMERICH · GERD MÜLLER ■ D. GROSSE · F. POLLMEIER ⁷³

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Λ0-

One made of pyroelectric material on one surface A shield electrode is molded and fabricated from the existing chip. In one made of semiconductor material or holes made of electrically conductive material are incorporated, and this base layer is made using electrical 1, the other face of the pyroelectric Material of the existing platelet is ground, whereupon the pick-up electrodes are placed on this surface for picking up and receiving the infrared rays be shaped and manufactured, each of these receiving electrodes, its surface is in each case smaller than the surface area of each hole, in each case arranged above one of the holes will. The pyroelectric material is then placed in position between the Cut holes in chips or slices.

The invention thus relates to a system for measuring and detecting infrared rays with the aid the pyroelectric effect, and in particular a pyroelectrically operating detector, and methods for the manufacture of such a pyroelectric detector. The pyroelectrically operating detector includes: - pyroelectric material; a receiving electrode for receiving and receiving infrared rays this pick-up electrode on one surface of the pyroelectric material; a shield electrode on the other face of the pyroelectric material; one made of semiconductor material or a base layer made of an electrically conductive material attached to the shield electrode

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PATENTANWÄLTE F.W, HEMMERICH ■ GERD MÜLLER · D. GHOSStE · F. POLLMEIER 73

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is attached, with a hole or a bore being worked into the base layer, which is ner location of the position of the infrared pickup electrode is arranged accordingly; finally also a frame on which the green layer is mounted and · is attached.

The process for the production of the pyroelectrically operating detector is characterized by that to him the individual steps listed below include: the manufacture of a shielding electrode on one face of a pyroelectric Material of existing platelet; the machining of holes or boreholes in a base layer or backing layer; attaching the base layer or backing layer to the shield electrode; grinding the other face of the pyroelectric material chip; 'Jas molding and making the for picking up and receiving infrared rays certain electrodes on the other surface of the made of pyroelectric material, the electrodes in such positions assigned that exactly correspond to the positions of the holes or bores; between Holes or bores, finally, the cutting of the pyroelectric material into chips or disks, with the aim of obtaining a single pyroelectric detector.

In the following, the invention will now be based on the exemplary embodiment shown in the drawing,

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PATENT LAWYERS F.W. HEMMERICW GERD MÜLLER D. GROSSE - F. POLLMEIER 73

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(of the embodiments shown in the drawing), are explained in more detail. The drawing shows in: -

1 shows a pyroelectrically operating pyroelectrically operating system corresponding to the state of the art known up to now Detector in longitudinal section '.

Fig. 2 a. second embodiment of a pyroelectric, corresponding to the prior art working detector in the longitudinal section.

3 shows a third embodiment of a pyroelectric which corresponds to the prior art Detector in longitudinal section.

4A shows an exemplary embodiment shown in longitudinal section a pyroelectric detector of this invention.

4B shows a perspective illustration of the pyroelectric, shown partially in section working detector according to Fig. 4A.

Fig. 5 A circuit diagram of the pyroelectrically operating detector.

Fig. 6 A manufacturing method for manufacturing of the pyroelectrically operating detector shown as a sequence of individual steps.

Fig. 7 Another manufacturing method for manufacturing of the pyroelectrically operating detector shown as a sequence of individual steps.

130015/0982.

PATENT LAWYERS F.W. HEMMERICH GERO ΜϋιΛER D. GROSSc F. POLLMEIER 73

- bh 20.9.1980

Fig. 8 Yet another manufacturing method To make the pyroelectrically operate the detector is shown as a sequence of single steps.

4A is a longitudinal section through the preferred embodiment of the pyroelectrically operating detector of this invention. The crystal 11 is a pyroelectric material, a pyroelectric crystal such as LiTaO ₃ . This pyroelectric crystal 11 has the following dimensions: a thickness of around 50 μm and the edge lengths of 3.5 mm × 3.5 mm.

On the upper surface of the pyroelectric crystal 11 is arranged and attached is an infrared receiving and Pick-up electrode 12, the infrared rays has to take in and receive. This infrared pickup and receive electrode 12 is one Disc, which has a diameter of 2 mm. On the other face of the pyroelectric crystal a shield electrode 13 is disposed and applied, and this shield electrode 13 covers the entire surface of the crystal 11. A base layer or carrier layer 15, made of a semiconductor material, in the case of silicon, one is electrical conductive adhesive 14 to the aforementioned shielding elements 13 firmly glued on. The main plane of the base layer or carrier layer 15 made of silicon is in the (100) matrix plane

130015/0

PATENT LAWYERS F.W. HEMMERICH GERO MÜLLER U. GHOSSt F. POLLMEIER 73

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aligned and oriented. The 'base layer or Carrier layer 15 has a thickness of 250 μm and edge lengths from 3.5 mm 3.5 mm. The base layer or carrier layer made of silicon points in the middle 15 a square hole 16 with the dimensions of 2.5 mm 2.5 mm. The square hole 16 is produced using the selective etching process. The respectively applicable position for the opening area of the square hole. 16 corresponds the position of the infrared pickup and receiving electrode 12, if the hole 16 is also considerably wider and larger than the infrared exception and receiving electrode 12. The lugs / feet of the base layer / carrier layer 15 made of silicon are glued to a frame or holding device 18 with electrically conductive adhesive 17. That Frame / holding device 18 and the terminals 20 are insulated from each other using insulating material, namely of insulating material 19. The terminal 20 and the infrared pickup and receiving electrode 12 are electrically connected to one another with a connecting wire 21. This connecting wire 21 is either made of gold or aluminum.

The pyroelectrically operating detector shown in FIG. 4A is in a housing according to FIG. 4B built-in. Its electrical circuit is shown in FIG. In the illustrated embodiment the infrared recording and receiving electrode 12 stands with the support elements 22a

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PATENT LAWYERS F.W. HEMMERICH GERO MÜLL ER D. GROSSc F. POLLMEIER 73

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As

and 22b - these are electrically conductive holding elements - in an electrically conductive connection. On the holding device arranged very close to the pyroelectric crystal 11, ie on the holding frame, the resistors 23 and and the field effect transistor or FET transistor 25 are mounted. The holding device or the frame 18 is _{hermetically sealed in nitrogen gas N 2} and covered with a cover 26. A window 27 made of silicon is inserted into the center of the cover 26. _{The three connecting pins Tj, T 2} and T ₃ are passed through the holding device or the frame. The connection pin T-, this connection pin is at ground / earth is connected directly to the holding device / the frame. The pin T ₂ is led once to the resistor 24 and the other to the source connection or emitter connection of the field effect transistor / FET transistor 25, while the connection pin T, finally, to the drain connection or collector connection of this field effect transistor / FET transistor 25 communicates. Resistors 23 and 24, which are also high connected to the fixture or rack 18, have a resistance of 10 ohms and 10 ohms, respectively. When infrared rays are incident through the silicon window 27 and then reach the infrared receiving and receiving electrode 12, as a result, between the pins T-, and T _? generates an output voltage.

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PATENT LAWYERS F.W. HEMMERICH GERC 'MÜLLER D. GR0S3E' Γ. POLLMEIER 73

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In the embodiment illustrated with FIG. 4A and FIG. 4B, the heat absorption capacity is low because a hole is worked into the base layer or carrier layer 15. The shield electrode 13 also no longer needs to be connected to the holding device or the frame 18 using a wire; because the base layer or carrier layer 15 is made of a semiconductor material or of an electrically conductive material Material produced and also still using electrically conductive adhesive 14 and 17 attached. In addition, this pyroelectric detector is therefore suitable for a long time Lifetime because its pyroelectric crystal 11 is held by the base layer or carrier layer 15 will.

The pyroelectrically operating detector shown with FIG. 4A is produced using the method shown with FIG. 6 and described with reference to FIG. This method has the following individual processing steps: During the processing step shown in FIG. 6 (a), a shielding electrode 13 is formed and manufactured on a pyroelectric crystal block 31; -Carrier made of LiTaO ₃ . The shielding electrode 13, which can consist of chromium-nickel, is produced using the vacuum vapor deposition process or the spray-on process. At the processing step

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PATENT LAWYERS F.W. HEMMERICH GERD MÜLLER · D. UROSSK · -. POLLMEIER 73

- bh September 20, 1980

/ f?

As shown in Fig. 6 (b), a surface of the base layer or support layer 15 x, this with a diameter of 63 mm and a thickness of 250 µm coated with an oxide film. The base layer or backing layer has an orientation (100). The oxide film used as a mask for the etching process has square holes with an edge length of 2.8 mm χ 2.8 mm. Fig. 6 (c) now shows how In a further operation, the other surface of the base consisting of silicon is created or Carrier layer using an electrically conductive adhesive 14 to the shielding electrode 13 of the plate 31 is glued. Finally, in the operation illustrated by FIG. 6 (d) the other surface of the plate 31 consisting of pyroelectric crystal is ground until until this plate has a thickness of 50 μm.

The platelets from the pyroelectric crystal 31 and · from the base layer or carrier layer 15 made of silicon is then in immersed liquid hydrazine, which has a temperature of 100 ° C and has the property, that it has a rapidly etching effect in the direction (100), but it is slowly etching in the direction (111). This in turn has the consequence that the. Silicon consists of a carrier layer or a base layer 15 is selectively etched at an angle of 57 to the (100) face of the crystal. The square holes 16 shown in FIG. 6 (e), each of which has an edge length of in each case 2.5 mm χ 2.5 mm, this selective etching process in the silicon

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PATENT LAWYERS F.W. HEMMERICH ■ GERD MÜLLF.R · D. GROSSE · F. POLLMEIER 73

- bh 20.9.1980

During the process shown in FIG. 6 (f), the oxide film 32 is removed again then on the sanded surface of the plate 31 the infrared pick-up or receiving electrode 12 molded and manufactured, each of these electrodes 12 being a disk with a Each electrode is 2.0 mm in diameter, each electrode 12 still in its position a hole 16 is assigned to each applicable position and each electrode 12 is considerably smaller in area than the hole 16 assigned to it in each case.

FIG. 6 (g) shows a plan view of the plate 31 after the implementation and completion of the method based on FIG Machining operations described in FIGS. 6 (a) to 6 (b). In Fig. 6 (g) with the dashed lines Squares the holes 16 shown, although compared to the illustration in Fig. 6 (g) the distance between the holes 16 is larger. The wafer 31 is finally made on a chip cutting machine, as shown in Fig. 6 (h) and Fig. 6 (i) is cut into individual chips or slices. The chip or disk is placed on the frame or on the holding device 18 and secured with electrically conductive adhesive 17 in the manner shown in Fig. 6 (j).

The method shown in FIG. 6 facilitates the production of pyroelectrically operating Detectors because a large plate is used. This is the reason why this one is suitable Process also for mass production or series

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PATENT LAWYERS F.W. HEMMERICH GERD MÜLLER D. GROSCE Γ. POLLMEIER 73

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manufacture of pyroelectric detectors. About that In addition, you can use a universal chip cutting machine Pyroelectric detectors are made that are inexpensive and not so are expensive.

In the manufacturing process, which is related to has been explained and described with Fig. 6, various changes and modifications can be made. Instead of the base layer or carrier layer made of silicon 15 base layers or backing layers can be used made of Ge, GaAs or Gap. Furthermore, the one for the production the holes specific work process the work process are preceded, in which the other surface of the pyroelectric crystal plate 31 ground will .

Another, manufacturing method for manufacturing of pyroelectric detectors is shown in its sequence in Fig. 7 and should be based on Fig. 7 will be described and explained. This procedure includes the following individual steps: - During the process shown in FIG. 7 (a), on one surface of the pyroelectric crystal plate 41 one Shield electrode 42 is molded and fabricated. During the machining step according to Fig. 7 (b) are in the carrier layer or base rail 44 the circular holes 43 incorporated. The carrier layer or base layer 44 is made of a half

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PATENT LAWYERS F.W. HEMMERICH · GERC MÜLLES ■ D. GROSSE · F. POLLMEIER 73 '

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conductive material or made of electrically conductive material made, for example from Si, Ge, GaAs, Gap or made of metal. A conventional method can be used for making the circular holes 43 can be used, for example drilling ultrasound or a sand brass method (Sandblowing proceed η ??).

From Fig. 7 (c) it can now be seen that the. Carrier layer or base layer 44 using electrically conductive adhesive 45 on the shield electrode 42 of the plate 41 is attached. Fig. 7 (d) shows the machining process in which the other face of the pyroelectric crystal plate It is sanded until it has a thickness of 50 μm. According to Fig. 7 (e) are on the ground surface of the platelet. 41 the infrared on receiving and receiving electrodes 46 formed and manufactured 111, each of the electrodes 46 having a Disk is, the diameter of each of these disks being smaller than the diameter of each of the circular holes 43. Then, as shown with Fig. 7 (f) and Fig. 7 (g) again is, between the infrared pickup and receiving electrodes 46, the connection electrodes 47 are molded and fabricated. Fig. 7 (g) is is a plan view of the wafer 41; in this top view the holes are dashed Lines drawn.

The cutting of the plate 41, this is shown in Fig. 7 (g), takes place on a universal

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PATENT LAWYERS F.W. HEMMERICH GERD MÜLLER D. GROSSE F. POLLMEIER 73

- bh 20.9.1980

SH

Chip cutting machine, between the circular holes 43. Finally, in Fig. 7 (h) and FIG. 7 (i) also shows the single chip. As shown in Fig. 7 (j), the consisting of the pyrolytic material 48 chip on the holder or on the frame 49 below Use of electrically conductive adhesive 50 glued on. A terminal 51, which is made of insulating material 52 is held is electrically connected to the connecting electrode with a lead 53 47 connected. This connection electrode 47 corresponds to the electrically conductive holding elements 22a and 22b from FIG. 4B the pyrotechnic one The detector of Fig. 7 (j) is similar to that of Fig. 4B mounted in the manner shown

Because in the manufacturing method described with reference to FIG the machining process used to make the holes is mechanized the pyroelectric detectors can be inside can be produced in a short time. It is added that because of the circular hole 46 in the Base layer or carrier layer 44 and because of the large contact area between base layer / carrier layer 44 and holder / Gestel1 49, the pyrolecetric The detector of Figure 7 is more durable and better constructed than the pyroelectric detector according to FIG. 6 and the manufacturing processes described in connection therewith.

Yet another method of manufacturing pyroelectrically operating detectors is described below will now be described with reference to FIG.

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PATENT LAWYERS F.W. HEMMERICH ■ GERD MÜLLER · D. GROSSE · F. POLLMEIER 73

- bh 20.9.1980

This manufacturing process includes the following individual steps described: - During the with. Fig. 8 (a) reproduced machining process on one face of the pyroelectric crystal plate 61, over the entire area, the shield electrode 62 is formed and manufactured. Then, as shown in Fig. 8 (b), a base layer or backing layer 63 is made using an electrical conductive thick film paste on the shield electrode 62 produced, the circular holes 64 belonging to the carrier layer 63, which are incorporated there will. The thick film paste is applied to the shield electrode 62 applied, the surface areas of the holes remaining free. For application the thick film paste finds this to last for an hour Screen printing process application. After application, the electrically conductive thick film paste ■ burned for an hour.

Fig. 8 (c) now shows that the other surface of the pyroelektri see crystal plate 61 except for one Thickness of 50 µm is sanded. During the machining process shown in FIG. 8 (d) are on the ground surface of the plate 61 the infrared pickup and receiving electrodes 65 molded and manufactured. These electrodes 65 are produced using spraying or vacuum evaporation of nickel chromium. At 'each of the infrared pickup and receiving electrodes 65 is a disc with a diameter of 2.0 mm, whereby compared to the diameter

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PATENT LAWYERS F.W. HEMMERICH GERD MOLLER ■ D. GROSSE · P. POLLMEIER 73

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Each of the holes 64 receives each of the infrared taking and receiving electrodes 65 has to have a smaller diameter. The connection electrodes 66 become very close and in contact with the infrared recording and receiving electrodes shaped and manufactured as can be seen in Fig. 8 (c). The connection electrodes are manufactured 66 made of around 1 .mu.m thick aluminum, which is applied in a vacuum vapor deposition process will.

The plate 61 is inserted between the holes 64, specifically in the positions shown in FIG. 8 (e), cut into individual chips on a universal chip cutting machine. The single chip will then using electrically conductive adhesive 69 on the bracket or frame 68 glued. The assembly and housing of the chip correspond to the illustration in Fig. 4 B.

With the manufacturing method described with reference to FIG pyroelectric detectors can therefore be manufactured easily and simply, because an electrically conductive thick film paste without making holes directly on the pyroelectric Crystal! Plate is applied and shaped.

In all of the examples of the production methods provided by this invention, pyroelectric crystals, for example a crystal of LiTaO., Are used as measuring elements for receiving and receiving infrared rays. Other pyroelectric substances can also be used, for example triglycerol sulfate (TGS), strontium barium niobate (SBN), PbTiO ₃ and PZT - as ferroceramic substances.

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Claims (15)

PATENT LAWYERS F.W. HEMMERICH GERD MÖLLER D. GROSSE F. POLLMEIER 3Q35333 gr.ni 73 402 Tokyo Shibaura Denki Kabushiki Kaisha, 72 Horikawacho, Saiwai-ku, Kawasaki-shi, Kanagawa-ken (Japan) Claims Pyroelectric detector consisting of pyroelectric material, an infrared recording and receiving electrode, which is arranged on one side of the pyroelectric material, and a shield electrode on the other side of the pyroelectric material, this being this Shielding electrode fixed to a base or made of semiconductor material or of electrically conductive material Carrier layer is glued, which in turn is firmly glued to a holding device, characterized in that the base or carrier layer (15) has a hole (16), which is considerably larger than the infrared and receiving electrode (12). 2. Pyroelectric detector according to claim 1, characterized in that that the base or carrier layer is made of silicon. 3. Pyroelectric detector according to claim 1, characterized in that the base or carrier layer is made of germanium is. 4. Pyroelectric detector according to claim 1, characterized dadurgh, that the base or support layer is made of GaAs. 130015/0962 -20- PATENT LAWYERS F.W. HEMMERICH · GERD MÜLLER · D. GROSSE ■ F. POLLMEIER ~ 5. Pyroelectric detector according to claim 1, characterized in that that the base or carrier layer is made of GaP. 6. Pyroelectric detector according to claim 1, characterized in that geken n-z e i c h η e t, that the base or carrier layer is made of a metal. • 7. Pyroelectric detector according to Claim 1, characterized in that that the base or carrier layer is made of an electrically conductive thick film paste. 8. Pyroelectric detector according to claim 1, characterized in that that the pyroelectric material is LiTaO crystal. 9. A method for producing the pyroelectric detector according to at least one of claims 1 to 8, characterized in that a shielding electrode on the one (first) surface the plate made of pyroelectric material is molded, that a base or carrier layer made of semiconductor material on one (first) surface of the pyroelectric Material is attached to the existing plate using electrically conductive adhesive, that the other (second) surface of the pyroelectric material is ground, that holes are incorporated into the base or carrier layer will, that certain electrodes are made for picking up and receiving infrared rays and placed on the other (second) Area of the pyroelectric material 130015/0982 - 21 - PATENTANWÄLTE FW HEMMER ICH GERD MÜLLER D. GROSSE F. POLLMEIER - l / i - Platelets are formed, the area occupied by an electrode being considerably smaller in each case is the base area of the opposite hole in the carrier or base layer, and that the pyroelectric material is sawn or cut in the positions between the holes will. 10. The method according to claim 9,
characterized in that one of the substances Si, Ge, GaAs or GaP is used as the base or carrier layer. 11. The method according to claims 9 or 10, characterized in that that the machining process of making holes in the base or carrier layer is carried out by selective etching will. 12. Method of Manufacture of Pyroelectric Detector according to at least one of claims 1 to 8, characterized in that a shielding electrode is on the one (first) surface a plate made of pyroelectric material is molded, that holes in a carrier or base layer made of semiconductor material or made of electrically conductive material, that the base or carrier layer on one (first) surface of the plate made of pyroelectric material is attached using electrically conductive adhesive, that the other (second) surface of the pyroelectric material plate is ground, that electrodes for receiving infrared rays on the ground surface of the pyroelectric material 130015/0962 -23- PATENT LAWYERS F.W. HEMMERICH · GERD MÜLLER ■ D. GROSSE · F. POLLMEIER - existing platelets are provided, each the area occupied by one electrode is considerably smaller than the base area of the opposite one Hole in the carrier or base layer, and that by cutting or sawing between the holes chips are made from the pyroelectric material. 13. Method of Manufacturing the Pyroelectric Detector according to claim 12, characterized in that for the production of the base or carrier layer Use one of the substances Si, Ge, GaAs, GaP or metal. will be. 14. Method of Manufacture of Pyroelectric Detector according to claims 12 or 13, characterized in that the holes are made using mechanical methods be incorporated into the base or support layer. 15. A method for producing the pyroelectric detector according to at least one of claims 1 to 8, characterized in that a shielding electrode on the one (first) surface a plate made of .pyroelectric material is molded, that an electrically conductive thick film paste on the shielding electrode is applied, with holes provided in the thick film paste, that the other (second) surface of the pyroelectric material plate is ground, that electrodes for receiving infrared rays on the ground surface of the pyroelectric material Platelets are arranged, in each case the area occupied by an electrode is smaller than that Base area of the opposite hole in the thick film paste, 130015/0962 _ ₂₄ _ PATENT LAWYERS F.W. HEMMERICH ■ GERD MÜLLER · D. GROSSE · F. POLLMEIER - and that chips are made on the pyroelectric material by cutting or sawing between the holes. 130015/0962