DE2539368C3 - High frequency generator - Google Patents
High frequency generatorInfo
- Publication number
- DE2539368C3 DE2539368C3 DE2539368A DE2539368A DE2539368C3 DE 2539368 C3 DE2539368 C3 DE 2539368C3 DE 2539368 A DE2539368 A DE 2539368A DE 2539368 A DE2539368 A DE 2539368A DE 2539368 C3 DE2539368 C3 DE 2539368C3
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- field effect
- frequency generator
- effect transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 20
- 230000001419 dependent effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1256—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/0034—Circuit elements of oscillators including a buffer amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/0036—Circuit elements of oscillators including an emitter or source coupled transistor pair or a long tail pair
Landscapes
- Amplifiers (AREA)
Description
Die Erfindung bezieht sich auf einen Hochfrequenzgenerator mit einem Feldeffekttransistor in Drainschaltung als Oszillatortransistor, einem frequenzabhängigen Rückkopplungsvierpol und einem nachgeschalteten Trennverstärker.The invention relates to a high-frequency generator with a field effect transistor in a drain circuit as an oscillator transistor, a frequency-dependent feedback quadrupole and a downstream Isolation amplifier.
Aus der DE-AS 17 66 840 ist ein derartiger Hochfrequenzgenerator bekannt. Bei diesem Hochfrequenzgenerator wird die Betriebsspannung über zwei in Reihe geschaltete Zenerdioden stabilisiert.From DE-AS 17 66 840 such a high frequency generator is known. With this high-frequency generator, the operating voltage is supplied via two in series switched zener diodes stabilized.
Aus der DE-PS 8 88 419 ist ein Generator bekannt, dessen Stromversorgung aus einem Leistungsverstärker erfolgt, der eingangsseitig durch die Generatorfrequenz gesteuert wird, um die Beeinflussung der Generatorfrequenz durch die Frequenz der Speisespannung zu unterdrücken.From DE-PS 8 88 419 a generator is known whose power supply from a power amplifier takes place, which is controlled on the input side by the generator frequency in order to influence the generator frequency suppressed by the frequency of the supply voltage.
Aus der DE-AS 23 38 613 ist ein Signalgenerator bekannt, bei dem zur Erhaltung einer konstanten Signalamplitude bei schwankender Betriebsspannung 6s zwischen der Last und dem Ausgang des Signalgenerators ein Transistor als Längsregler vorgesehen ist.From DE-AS 23 38 613 a signal generator is known in which to maintain a constant Signal amplitude with fluctuating operating voltage 6s a transistor is provided as a series regulator between the load and the output of the signal generator.
Bei spannungsgesteuerten freischwingenden Hochfrequenzgeneratoren in Senderregelschaltungen wird die Phasenregelschleife sehr langsam gemacht, um die Phasenvergleichsfrequenz zu unterdrücken. Dadurch können aber hohe Störfrequenzen durch die Phasenregelschaltung nicht verhindert werden.In the case of voltage-controlled free-running high-frequency generators in transmitter control circuits made the phase locked loop very slow in order to suppress the phase comparison frequency. Through this however, high interference frequencies cannot be prevented by the phase-locked circuit.
Der Erfindung liegt die Aufgabe zugrunde, die Betriebsspannung des Oszillatortransistors eines Hochfrequenzgenerators gegen Schwankungen und Störungen zu schützen.The invention is based on the object of determining the operating voltage of the oscillator transistor of a high-frequency generator to protect against fluctuations and disturbances.
Diese Aufgabe wird mit den im Anspruch 1 genannten Mitteln gelöst.This object is achieved with the means mentioned in claim 1.
Weiterbildungen können den Unteransprüchen entnommen werden.Further developments can be found in the subclaims.
Mit wenig zusätzlichem Aufwand wird ein vollständiger Gleichstromregelkreis geschaffen und dadurch werden vom Oszillatortr-nsistor Störungen ferngehalten. Durch den gewählten Aufbau erhält man gleichzeitig zwei gegeneinander rückwirkungsfreie Ausgänge für das Oszillatorsignal.With little additional effort, a complete DC control loop is created and thereby Disturbances are kept away from the oscillator transistor. Due to the chosen structure you get at the same time two mutually reaction-free outputs for the oscillator signal.
Die Erfindung wird nachstehend anhand eines Ausführungsbeispieles näher erläutert. Die Figur der Zeichnung zeigt das Schaltbild eines Hochfrequenzgenerators. The invention is explained in more detail below using an exemplary embodiment. The figure of the Drawing shows the circuit diagram of a high frequency generator.
Dieser Hochfrequenzgenerator besteht aus einem Feldeffekttransistor 4 in Drainschaltung als Oszillatortransistor, einem frequenzabhängigen Rückkopplungsvierpol 1, einem Koppelkondensator 2 und den Widerständen 3 und 5. Der Widerstand 3 ist von der Gate-Elektrode G des Feldeffekttransistors 4 zum Bezugspotential (Masse) geschaltet und der Widerstand 5 ist der Arbeitswiderstand des Oszillatortransistors und liegt deshalb zwischen der Source-Elektrode 5 des Feldeffekttransistors 4 und dem Bezugspotential.This high-frequency generator consists of a field effect transistor 4 in a drain circuit as an oscillator transistor, a frequency-dependent feedback quadrupole 1, a coupling capacitor 2 and the resistors 3 and 5. The resistor 3 is connected from the gate electrode G of the field effect transistor 4 to the reference potential (ground) and the resistor 5 is the working resistance of the oscillator transistor and is therefore between the source electrode 5 of the field effect transistor 4 and the reference potential.
Eine Betriebsspannung UB ist über einen als Längsregler geschalteten Transistor 6 an die Drain-Elektrode D des Feldeffekttransistors 4 geführt. Zwischen der Basis des Transistors 6 und die Betriebsspannung L/eist ein Widerstand 7 geschaltet.An operating voltage U B is fed to the drain electrode D of the field effect transistor 4 via a transistor 6 connected as a series regulator. A resistor 7 is connected between the base of the transistor 6 and the operating voltage L / e.
Der zum Hochfrequenzgenerator gehörende Trennverstärker besteht aus einem Differenzverstärker, dem das Oszillatorsignal zugeführt wird. Der Differenzverstärker ist aus zwei Transistoren 9 und 11, deren Emitter am gemeinsamen Widerstand 10 angeschlossen sind, aufgebaut. Die Transistoren 9 und 11 weisen eine sehr hohe Grenzfrequenz auf, d. h., sie sind Hochfrequenztransistoren. Die Basis des Transistors 9 ist, wie schon erwähnt, mit der Source-Elektrode S des Feldeffekttransistors 4 verbunden, während die Basis des Transistors 11 an einem Abgriff eines Spannungsteilers liegt. Der Spannungsteiler besteht aus zwei Widerständen 17 und 16, der zwischen der Drain-Elektrode D des Feldeffekttransistors 4 und dem Bezugspotential geschaltet sind. In die Kollektorleitungen der Transistoren 9 und 11 ist je ein Übertrager 8 bzw. 12 eingefügt, an deren Sekundärseite zwei um 180° verschobene Phasen des Oszillatorsignals gegeneinander rückwirkungsfrei abgenommen werden können. Die Verwendung von Übertragern gestattet eine einfache Widerstandsanpassung zwischen dem Differenzverstärker und den weiteren, nicht gezeigten Schaltungsteilen. Nach dem Übertrager 8 ist die Kollektorleitung des Transistors 9 mit der Basis des Transistors 6 verbunden, während die Kollektorleitung des Transistors 11 entsprechend an die Drain-Elektrode D des Feldeffekttransistors 4 angeschlossen ist.The isolating amplifier belonging to the high-frequency generator consists of a differential amplifier to which the oscillator signal is fed. The differential amplifier is made up of two transistors 9 and 11, the emitters of which are connected to the common resistor 10. The transistors 9 and 11 have a very high cut-off frequency, that is to say they are high-frequency transistors. As already mentioned, the base of the transistor 9 is connected to the source electrode S of the field effect transistor 4, while the base of the transistor 11 is connected to a tap of a voltage divider. The voltage divider consists of two resistors 17 and 16 which are connected between the drain electrode D of the field effect transistor 4 and the reference potential. In each of the collector lines of the transistors 9 and 11, a transformer 8 or 12 is inserted, on the secondary side of which two phases of the oscillator signal shifted by 180 ° can be picked up in a non-reactive manner. The use of transformers allows the resistance to be easily matched between the differential amplifier and the other circuit parts (not shown). After the transformer 8, the collector line of the transistor 9 is connected to the base of the transistor 6, while the collector line of the transistor 11 is correspondingly connected to the drain electrode D of the field effect transistor 4.
Der Trennverstärker für das Oszillatorsignal arbeitet gleichzeitig als Regelschaltung für den als Längsregler geschalteten Transistor 6. Wird der FeldeffekttransistorThe isolation amplifier for the oscillator signal is working at the same time as a control circuit for the transistor 6, which is connected as a series regulator
4 im Sattigungsbereich betrieben, so fließt durch ihn ein relativ konstanter Strom, auch wenn die Spannung zwischen der Drain-Elektrode D und der Source-Elektrode S schwankt Dieser Effekt wird ausgenutzt und der entsprechend relativ konstante Spannungsabfall am Widerstand 5 in der Sourceleitung des Feldeffekttransistors 4 als Referenzspannung verwendet Diese Referenzspannung liegt am nicht invertierenden Eingang des Differenzverstärkers, während am invertien.nden Eingang die zu regelnde Spannung, das ist die Spannung an der Drain-Elektrode Ddes Feldeffekttransistors 4, anliegt. Die Differenzspannung wird vom Kollektor des Transistors 9 abgenommen und der Basis des Transistors 6 als Regelspannung zugeführt4 is operated in the saturation range, a relatively constant current flows through it, even if the voltage between the drain electrode D and the source electrode S fluctuates.This effect is used and the corresponding relatively constant voltage drop across the resistor 5 in the source line of the field effect transistor 4 used as reference voltage This reference voltage is applied to the non-inverting input of the differential amplifier, while the voltage to be regulated, that is the voltage at the drain electrode D of the field effect transistor 4, is applied to the inverting input. The differential voltage is taken from the collector of transistor 9 and fed to the base of transistor 6 as a control voltage
Da das Oszillatorsignal nur eine differentiell kleine Wechselspannung ist, können die beiden Funktionen, Verstärken des Oszillatorsignales und Bilden einer Regelspannung, gemeinsam vom Differenzverstärker ausgeführt werden.Since the oscillator signal is only a differentially small alternating voltage, the two functions, Amplification of the oscillator signal and generation of a control voltage, jointly by the differential amplifier are executed.
Da der Feldeffekttransistor 4 aus der geregelten Betriebsspannung versorgt wird, braucht der Hochfrequenzgenerator eine Anschalthilfe. Daai ist eine Zenerdiode 13 von der Betriebsspannung Ub zu der Drain-Elektrode D des Feldeffekttransistors geschaltet. Die Kathode der Zenerdiode 13 liegt dabei an der Betriebsspannung Ln- Durch die Zenerdiode 13 wird nach dem Einschalten ein Anfangsstrom duivh den Feldeffekttransistor 4 ermöglicht. Nach Einstellung des Gleichgewichtszustandes wird die Zenerdiode 13 stromlos und bleibt es, solange die Differenz zwischen der ungeregelten und der geregelten Betriebsspannung kleine- als die Zenerdiodenspannung bleibt Statt der Zenerdiode 13 kann auch ein entsprechender Widerstand verwendet werden.Since the field effect transistor 4 is supplied from the regulated operating voltage, the high-frequency generator needs a connection aid. Daai a Zener diode 13 is connected from the operating voltage Ub to the drain electrode D of the field effect transistor. The cathode of the Zener diode 13 is connected to the operating voltage Ln . The Zener diode 13 enables an initial current to flow through the field effect transistor 4 after it is switched on. After the equilibrium state has been set, the Zener diode 13 is de-energized and remains so as long as the difference between the unregulated and the regulated operating voltage remains lower than the Zener diode voltage. Instead of the Zener diode 13, a corresponding resistor can also be used.
Zur Sicherung der Stabilität des Hochfrequenzgenerators bei hohen Frequenzen sind Kondensatoren 14To ensure the stability of the high-frequency generator at high frequencies, capacitors 14 are provided
ίο und 15 in Reihe von der Basis des Transistors 6 zum Bezugspotential geschaltet Die Verbindung zwischen diesen Kondensatoren 14 und 15 ist auch mit der Drain-Elektrode D des Feldeffekttransistors 4 verbunden. Dem gleichen Zweck dient ein Kondensator 18 am Mittelabgriff zwischen den Widersländen 16 und 17. Zur Sicherstellung der Stabilität des Gleichstromregelkreises bei tiefen Frequenzen ist ein Elektrolytkondensator 19 zwischen der Drain-Elektrode Dund dem Bezugspotential vorgesehen.ίο and 15 connected in series from the base of the transistor 6 to the reference potential. The connection between these capacitors 14 and 15 is also connected to the drain electrode D of the field effect transistor 4. A capacitor 18 at the center tap between the opposing sides 16 and 17 serves the same purpose. To ensure the stability of the direct current control loop at low frequencies, an electrolytic capacitor 19 is provided between the drain electrode D and the reference potential.
Die Polaritäten im beschriebenen Ausführungsbeispiel eines Hochfrequenzgenerators entsprechen einer positiven Betriebsspannung Ub- Wird eine negative Betriebsspannung verwendet, so sind entsprechende Transistoren zu verwenden und die Polaritäten der Zenerdiode und des Elektrolytkondensators zu vertauschen. The polarities in the described exemplary embodiment of a high-frequency generator correspond to a positive operating voltage Ub- If a negative operating voltage is used, corresponding transistors must be used and the polarities of the Zener diode and the electrolytic capacitor interchanged.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2539368A DE2539368C3 (en) | 1975-09-04 | 1975-09-04 | High frequency generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2539368A DE2539368C3 (en) | 1975-09-04 | 1975-09-04 | High frequency generator |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2539368A1 DE2539368A1 (en) | 1977-03-10 |
| DE2539368B2 DE2539368B2 (en) | 1977-09-01 |
| DE2539368C3 true DE2539368C3 (en) | 1978-05-03 |
Family
ID=5955594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2539368A Expired DE2539368C3 (en) | 1975-09-04 | 1975-09-04 | High frequency generator |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2539368C3 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321563A (en) | 1978-09-01 | 1982-03-23 | U.S. Philips Corporation | Circuit for stabilizing frequency of FET oscillator as output power varies |
-
1975
- 1975-09-04 DE DE2539368A patent/DE2539368C3/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321563A (en) | 1978-09-01 | 1982-03-23 | U.S. Philips Corporation | Circuit for stabilizing frequency of FET oscillator as output power varies |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2539368A1 (en) | 1977-03-10 |
| DE2539368B2 (en) | 1977-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| EHJ | Ceased/non-payment of the annual fee |