DE2333295A1 - ELECTRONIC COUPLING MULTIPLE - Google Patents

Description

Berlin and Munich

73/6099

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The object of the present invention is to provide an electronic Switching matrix for switching connection paths through Cal lead crosspoints, whose control electrons over Diodes are driven to be designed so that its crosspoints are bistable, even if there is no corresponding one lialtestrom Direct current through the main electrodes of the semiconductor crosspoints to keep them in the conductive state flows, and zv / ar without bistable devices outside the switching matrix to maintain a through-connection must be appropriate.

The invention is based on an electronic switching matrix for switching through connection paths by means of conductor crosspoints, whose control electrodes are controlled via diodes. The matrix according to the invention is characterized in that the diodes are bistable.

The invention and its developments are explained in more detail with reference to Figures 1 to 3, wherein

Figure 1 schematically shows a circuit diagram of an embodiment of the switching matrix according to the invention,

FIG. 2 shows the crosspoints of a crosspoint pair intended for two-wire through-connection into one according to the invention constructed embodiment as well

Figure 3 schematically shows an embodiment of a section of the switching matrix according to the invention shown in FIG. 2, which is produced using integrated technology is to show. For the sake of clarity, FIG. 3 shows the substrate on which the section is attached is not shown.

In FIGS. 1 and 2, the crosspoints Ka, Kb of exemplary embodiments are shown which are used for switching through connection paths serve by means of transistor crosspoints. These crosspoints need, because they contain three layers, so simple manufacturable transistors exist to their whereabouts

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In the conductive state there is no holding current like thyristors, which is particularly favorable for many applications of the switching matrix, in particular because it can reduce the direct current requirement of the switching matrix during operation This diode Da or Dd or Dab is designed here as a four-layer diode, that is to say as a diode with bistable behavior.

To switch through a connection path, the diode Da or Db or v /. Dab that with the control electrode of the coupling point to be switched through is connected, controlled from its high-resistance to low-resistance state, whereby into the control electrode of the coupling point the control current necessary for switching through the coupling point via this bistable Diode fed in v / ird. By feeding this control current via the bistable diode, it is therefore available Invention coupling matrix no longer necessary that outside of the switching matrix additional bistable devices are provided through which the non-bistable crosspoint transistors here Ka, Kb are supplied with the necessary control current during the connection of the connection path. At the Switching matrix according to the invention is the control of the control current taken over directly by the diodes Da, Db, and Dab, which are designed here as four-layer diodes.

The diode, for example the diode Da, can advantageously be fired through in each case by an ignition pulse which is sent to the control line sa1 or to the electrode of the diode Da-connected to it and to an associated column line or v /. Row line ₅ here in particular x1, placed v / ird. This ignition pulse controls the diode Da in its low-level state, whereby the control electrode of the coupling point Za is supplied with the necessary control current via the control line sa1 and the diode Da, so that the coupling point Ka is stable - even without a stop being conducted via the main electrodes -

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current - is controlled in the conductive state, so that a connection path between the row line al and the Column line x1 is stable. A return control of the crosspoint Ea to the non-conductive state can be done e.g. by a switch-off impulse, which the has opposite polarity v / ie the ignition pulse and which is connected to the same lines, e.g. sa1 / x1 The ignition pulse can be grounded as before. The switch-off pulse causes the diode Da to return to its high-income state State controlled so that the above control current is interrupted, which the coupling point Ha in the conductive state controlled. Because of the interruption of the control current, the coupling point Ka is stable again into the non-conductive state.

Instead of a transistor as a semiconductor coupling point Ea, Kb Other semiconductor switches, e.g. thyristors, can also be used as semiconductor coupling points. Thyristors Compared to transistors, they often have the advantage of having a larger blocking resistance, whereas transistors do have the particular advantage over thyristors, have a simple structure.

In a further development of the invention it is provided that the four-layer diode contains an additional control electrode and thus forms a thyristor, so here the structure a connection path can also be controlled via the control electrode of this thyristor. For opening This is because the diode can apply an ignition pulse to the control electrode of this diode. To go back this diode in the non-conductive state can generate a switch-off pulse in the same way as with a diode without a control electrode to the main electrode of the controllable diode.

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. 409884/0653 QRiGiNAL INSPECTED

In the switching matrix according to the invention, can be provided be that for two-wire connection of connection paths two row lines, e.g. al, b1 or a2, b2 each with zv / ei column lines x1, y1 via their own Crosspoints Ka and Kb are connected. In the case of two-wire through-connection, the crosstalk is advantageous can often be suppressed with less effort than with single-core Through-connection.

In the case of two-wire through-connection, the polarity of the semiconductor coupling points ICa, Kb, which belong to a connection path, e.g. that of the emitter-collector path of the corresponding two transistors shown in FIG be opposite, as shown in Pigur 1, see for example the corresponding polarity of the thyristors in Pigur 2 of Dg -AS 1 537 773 and in Pigur 1 of DT-OS 2 103 894. An advantage of the same polarity is the lower cost of production, especially in integrated technology. An advantage of the opposite polarity is the possibility of feeding the direct current to be fed from a single central battery to each subscriber connection, e.g. x1 / y1, centrally in the switching network into the established connection path Impact operation of the multiple.

In two-wire switching through the switching matrix according to the invention can also in a conventional V / else are not to be through the crossing points of the column lines and Zeilenleitun _f ~ s. See Pig. 2, each equipped with a capacity C v / earth the

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similar or the same size as the blocking capacitance between the main electrodes of the one provided for through-connection Crosspoints Ka and Kb, respectively. With capacities dimensioned in this way, this is crosstalk can be further reduced.

Because one electrode of the bistable diode Da, see FIG. 1, is only connected to the control electrode of one single coupling point, here Ka, and not additionally with the control electrode of a further coupling point, e.g. Kb, is the ohmic decoupling of the two coupling points of a two-wire through-connected The connection path is particularly large, mainly because of the transition resistance between the two crosspoints, see Ka and Kb in Pig. 1, *? Iier is particularly large. This training In addition, it allows single-core connection paths to be set up.

However, one electrode of the diode Da or v /. Dab over in Pig. 1 and 2 schematically indicated connection V can be simultaneously connected to the control electrodes of the two coupling points of a two-wire connection path. Advantageously, the two-wire through-connection of a connection path is possible here with a particularly low cost of components. A decoupling resistor Ra and / or a decoupling resistor Rb in Pig. Be inserted in the manner shown in FIG. By means of these decoupling resistors Zc, the decoupling of these semiconductor switches can also be thought of as very strong. The signal energy losses in the switching matrix are then particularly low. Through picture 4 in "Sienens-Inxomationen

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Telephone switching technology "3-67, page 157, is known for itself", decoupling resistors - there Called RB - to be inserted in connections between the control electrodes of two-wire semiconductor crosspoints.

FIG. 3 shows the diagram of an exemplary embodiment of the invention, which is produced using integrated technology, for example by means of vapor deposition, and thus takes up particularly little space and allows inexpensive assembly of the pan. The row lines a, b can in principle each be formed by parallel semiconducting conductor strips of the first conductivity type. The column lines y, χ can in principle also be formed by parallel semiconductor conductor strips of the first conductivity type. The column lines and row lines each cross each other perpendicularly. At the crossing points of the column lines and row lines that are to be equipped with semiconductor coupling points, the base layers of those transistors, which are also contained in the semiconductor layer V, are attached which form the semiconductor coupling points. The semiconductor layer V therefore has a conductivity of the second type, which is opposite to the first conductivity type. In this way, the coupling points are manufactured using integrated technology to save space. In addition, by making the areas of the pn junctions between emitter and base and between base and collector sufficiently large, the forward resistance in the conductive state of the transistors Ka, ICb in question can be made very small Attenuation of the signals transmitted in the connection path is correspondingly low. The same applies to the dimensioning of thyristor coupling points. - It is already known from DT-AS 1 106 368, in particular from its figure 3, that between a first multitude of parallel

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leler conductor tracks and a second plurality of parallel Conductor tracks that cross perpendicularly with the first conductor tracks, semiconductor switching elements at the creation points to be provided in order to form a multiple.

The conductor strips a, b, x, y of the switching matrix according to the invention can be designed in different ways. In this way, the conductor strips can also be made entirely from LIeta 11 exist, and then separate semiconductor switches between the intersecting conductive strips at the coupling points are to be inserted. In this pail, the individual transistors of each row or column are each only through that Metal of the conductor strip3 connected to one another. The ladder strips are particularly easy to manufacture here.

The one in Pig. 3 shown conductor strips can in particular also be layered in itself, namely from semiconductor strips coated with metal on one side, e.g. of the p-type, whereby the longitudinal resistance. of the conductor strip in question is greatly reduced. First let us consider the fact that all conductor strips have semiconductors of the same, first conductivity type. The side of the row conductor strips a, b shown in Pigur 3 opposite the metal covering is at the intersection points Ea, Kb to be equipped with the coupling points, in each case by a thin semiconductor layer V from the one opposite the metal cover Side of the column conductor strips separated. Layer V consists of a semiconductor of a second J-oit capability type, the conductivity type of the conductor strips; -semiconductors is opposite - here of the η-type. Au-.l ·, In this embodiment, the thin layer V contains the base of the transistors in each case. The cal lead strips each form the collectors or emitters of these trans-

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gates that line by line or column by column not only through the metair cover, but also directly through the semiconductor strips are interconnected. In this embodiment, the Puncture of the collectors or the puncture of the emitters from the conductor strips, which are very low-resistance here in the longitudinal direction taken over, whereby the semiconductor crosspoints are formed by transistors. Details about this are also indicated in the simultaneously filed application / patent (9/610/3185).

Not only transistors can be provided as coupling points in this way, but also other types of semiconductor switches. a first Γ 'conductivity type, for example p-type, and the rest of the semiconductor strips consist of a semiconductor of a soft conductivity type that is opposite to the first conductivity type, here then η-type. The side of the row conductor strips of one conductivity type opposite the metal covering is separated from the side of the column conductor strips of the other conductivity type opposite the metal covering by two, e.g. The doping and dimensioning of the two thin layers lying one above the other is chosen so that these crossing points contain thyristors, the two inner base layers of which are formed by the two thin layers lying one above the other. The control electrode of the thyriatric is connected to one of the two base layers.

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3 for the intensity of the doping of the semiconductor strips there are different options to choose from:

So you can see this intensity with the line semiconductor stress if en each make approximately the same size, besides the intensity in the case of the column semiconductor strips different, but also approximately the same size among each other. It is thereby achieved that the row conductor strips the doping of emitters or collectors of transistors or of anodes or cathodes of thyristors and the column conductor stripes the doping of collectors or emitters of transistors or of cathodes or anodes of thyristors. A switching matrix is then obtained in which the polarities of the two belong to a two-wire connection path Transistors, seen from the row connections, are equal among themselves.

However, the intensity of the doping of every second row semiconductor strip and every second one can also be used Make column semiconductor strips approximately the same with each other, in such a way that they are the emitters of the transistors Ka, Kb £ zw. the cathodes of thyristors form. The intensity of the doping of all other row and column semiconductor strips is then different, but to choose approximately the same for these strips, so that these strips are the collectors here of the transistors Ka, Kb or the anodes of the thyristors. Here you get a coupling matrix, at ■ the polarity of the two to a two-wire connection path belonging semiconductor switches, seen from the row connections, are opposite to each other.

In Fig. 3, for the sake of clarity, the control connected to the other electrode of the diode Dab

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INSPECTED

line sab as a perpendicular to the semiconductor strip plane attached * wire is drawn, which has a Contact is connected to this other electrode of the diode. However, the control line can drop, to which this other electrode of the diode is connected, as a separate conductor strip, e.g. made of!.! etall formed v / ground, which is in particular parallel to the column lines a, b between such Column lines or parallel to the row lines x, y, between such row lines. Advantageously represents the switching matrix is then almost only two-dimensional Form in which this control line inte-. integrated technology without great effort the production of the switching matrix are attached in integrated technology.

Compound V, see Pig. 1, 2 and 3, between the control electrodes of the to form a two-wire connection path belonging two coupling points is attached, can at least partially by a contiguous Half-litter zone, see Pig. 3, be made that way It is thin, long and narrow that its inherent resistance is the decoupling resistance or the decoupling resistances Ra, Rb, see Fig. 2, form. These decoupling resistances can also be at least partially due to the internal resistance a layer of the diode Dab. This is how these uncoupling resistors are produced in integrated technology in a particularly simple way necessary. In particular, as in Pig. indicated, this connection V represent a Z-shaped layer, which at the same time in itself the base zones which also contains crosspoint transistors, which is a particularly simple solution.

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The connection V can "in thyristors as semiconductor crosspoints also connect the control electrodes of the thyristors to one another and at the same time the controlled ones Including base layers of the thyristors, similar to what Pig did. 3 for transistors as crosspoints is described.

If the structure of the two semiconductor crosspoints belonging to a two-wire connection path, the structure the connection V and the structure of the bistable diode are each at least approximately symmetrical with respect to is the center of the bistable diode, then the properties of the two wires of the connection path are mutually exclusive largely similar, which in particular reduces crosstalk. That crosstalk will too can still be achieved by connecting the control line, see control line sa1 in Pig. 1, exactly in the Middle between the zv / egg column lines or row lines of the connecting path attaches, so that also insofar as symmetrical relationships are created. Details about this are in the filed at the same time Application / in the patent (9/610/3186)

specified.

The one in Pig. 2 shown capacitances C at those intersection points of the switching matrix at which no crosspoint is provided can, in particular, see Pig. 3, through an insulation layer I can be formed between the relevant crossing points. This insulation layer has A thickness is preferred here such that the resulting capacitance C is similarly large - ideally the same large - as the blocking capacitance between the main electrodes of the coupling tracks provided for through-connection Ka and Kb is. These capacitances C are used similarly to the corresponding capacities at those not with crosspoints crossing points of the entrance to be equipped

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"described known KoppeIvIfachs for compensation of interference voltages that exceed the intrinsic capacitance of the non-conductive crosspoints by capacitive ones Crosstalk are generated in column Tdzw, cell lines that do not belong to the connection path.

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Claims (29)

P_a_t_e n_t a S_s_2_r_ü_c_h_e 1. Electronic coupler for switching through of connection routes by means of semiconductor crosspoints, whose control electrodes are controlled via diodes, characterized in that that the diols (Da, Db, Dab) are each bistable. 2. Multiple according to claim 1, characterized that the semiconductor (Za, Kb) is a transistor. 3. Multiple according to claim 1, characterized ζ e äPc h η e t that the semiconductor (Ka, Kb) is a thyristor. . . 4. Often after one of the preceding / !, Sisprommunikations, characterized in that the Diode (Da, Db, Dab) is a four-layer diode. 5. Multiple according to claim 4, characterized in that the four-layer diode contains a control electrode so that it forms a thyristor. 6. Much according to one or the preceding / claims, characterized in that it is used for single-core connection of connection paths is suitable. 7. Multiple according to one of claims 1 to 5> d a VPA 9/610/3161 - 15 - 40988Λ / 0653 characterized in that it;: for two-wire through-connection of connection paths is suitable (Fig. 2 and 3). 8. Multiple according to claim 7, characterized in that the polarities (Snitter * 3asis ^ collector) of the two semiconductor crosspoints (Ka, Kb) belonging to a connection path, seen of the line connections (al, b1), are the same among themselves. 9. Multiple according to claim 7 »characterized that the polarities (emitter * * base ^ collector) of the two to a connection path belonging semiconductors (Ka, Kb), seen from the Zeilonleitun ^ connections (a1, .bi), are opposite under each other (Fig.1). 10. Multiple according to one of claims 7 to 9, characterized in that between the crossover points of the column lines (a, b) and row lines that cannot be switched through (x, y) each has a capacitance (C) inserted which is at least similar in size to the blocking capacitance between the main electrodes of the semiconductor coupling points provided for through-connection (Ka, Kb) is. 11. Multiple according to one of the preceding claims, characterized in that that the one electrode of the diode (Da, Db) only with "the control electrode of a single semiconductor coupling point connected is. VPA 9/610/3161 - 16 - 409884/0653 12. Multiple according to one of claims 7 "to 10, characterized in that the one electrode of the diode (via V) with the control electrodes of the semiconductor coupling points (Ka, Kb) both wires (a, b) of the connection path to be switched through is connected. 13. Multiple according to claim 12, characterized in that in the connection (V) between the diode and at least one of the two associated control electrodes of the semiconductor coupling points at least a single decoupling resistor (Ra, Rb) is inserted (Pig. 2). 14. Multiple according to one of the preceding claims, characterized in that that the ignition of the diode (Da, Db) takes place with an ignition pulse between the other electrode (sa1, sab) of the diode (Da, Dab) and an associated column or. Row line (x1, x) laid will. 15. Multiple according to claim 5 and one of the claims 6 to 13, characterized that the "diode is fired through with an ignition pulse that is sent to the control electrode of this Diode is placed. 16. Multiple according to one of the preceding claims, characterized in that it is manufactured using integrated technology (Pig. 3). 17. Multiple according to claim 16, characterized in that the line lines (a, c) VPA 9/610/3161 - 17 - '409884/065' mutually parallel conductor strips and the Column lines (x, y) form conductor strips parallel to one another so that the row lines and column lines cross one another and that at those to be equipped with semiconductor crosspoints Crossing points of the row lines and column lines each have a semiconductor switch (Ka, Kb) is appropriate. 18. Multiple according to claim 17, characterized ζ e <£ c h η e t that the conductor strips made of metal. 19. In many cases according to claim 17 »thereby g e kennzeicb.net that the conductor strips are made of semiconductor strips covered on one side with metal ifen exist. 20. Vielfach'nach claim 2 and 19 _S that, in that the semiconductor strips are made of a semiconductor of a first conductivity type and that the LIetallbedecI-run "opposite S g _e of the row conductor stripes on the to be equipped with coupling points crossing points by a thin semiconductor layer ( V) is separated from the side of the column conductor strips opposite the LIctallcoverung by a second conductivity type opposite to the first conductivity type, so that the semiconductor strips (a, b, x, y) each form the emitters or collectors of the transistors and the thin layer (V) each contain their transistor base. VPA 9/610/3161 - 18 - 409884/0653 21. Multiple according to claim 3 and 19, characterized in that a part of the semiconductor strips consist of a semiconductor of a first conductivity type and another part of the semiconductor strips consist of a semiconductor of a second conductivity type opposite to the first conductivity type, that the opposite of the metal cover side of the row conductor stripes _r with semiconductor of the first conductivity type to the auszustaltenden with coupling points crossing points by two thin, übereinanderliegence semiconductor layers of the Hetallbedecl: is ung opposite side of the column conductor stripes with semiconductors separated from the second conductivity type and in that the doping and Diuensionierung thin the two superposed Semiconductor layers is chosen so that these crossing points :: te thyristors. as semiconductor crosspoints and in each case one of the two thin, superimposed EaIbleiterschichten forms the base layer of this thyristor connected to the control electrode of this thyristor. 22. Multiple according to claim 8 and one of the claims or 21, indicated by that the intensity of the doping of the row semiconductor strips (Collectors) to each other is approximately the same size and that the intensity of the Doping of the column semiconductor strips (enitter) is approximately the same size among each other. 23. Multiple according to claim 9 and one of claims or 21, characterized in that that the intensity of the doping of every second line semiconductor stripe (al, a2) and every second VPA 9/610/3161 - 19 - 409884/0653 Column semiconductor strips - one below the other (emitter) is approximately the same in each case and that the intensity of the doping of all intervening Semiconductor strips (* b1) one below the other (collectors) each is approximately the same size. 24. In many cases according to one of claims 16 to 23, characterized , that the control line (sa1, saw) is connected to the other electrode of the diode (Da, Db, Dab) is, in parallel with and between the column lines (a, b) or row lines (x, y) runs. 25. Multiple according to claim 13 and one of claims to 24, characterized in that that the connection (V) is at least partially formed by a semiconductor zone of such dimensions, that their intrinsic resistance forms the decoupling resistance (Ra) or the decoupling resistance (Ra, Eb). 26. Multiple according to claim 25 and one of claims or 21, characterized in that that the Kalbleiterzone (V) is the controlled base layer of the semiconductor coupling points connected by this semiconductor zone nit contains. 27. Multiple according to claim 10 and one of claims to 25, characterized in that that the capacitance (C) is formed by an insulation layer (I) between the crossing points in question is. 28. Multiple according to claim 7 and 13 and one of the An-VPA S / ·: 10/31 61 - 20 - 409884/065 3 16 to 27, marked thereby e t that the establishment of a connection. away belonging to two semiconductor crosspoints, the Connection (V) and the diode are each symmetrical with respect to the center of the diode. 29. Multiple according to claim 24 and 28, characterized in that the control line in each case in the duct between two column lines or row lines runs. VPA 9/610/5161 9884/0653