DE20122241U1 - Current controlled CMOS circuits with inductive broadbanding, has two n channel MOSFETs having their source terminals coupled to first node, gate terminals coupled to receive two differential logic signals, respectively - Google Patents

Abstract

The MOSFET has two n channel MOSFETs having their source terminals coupled to a first node, their gate terminals coupled to receive two differential logic signals, respectively and their drain terminals coupled respectively to two output nodes. Two series RL circuits are coupled between the two nodes and a logic high level. Two capacitive loads are coupled to the output nodes. A current source n channel MOSFET is coupled between the source terminal of the two select n channel MOSFETs and a logic low level. An independent claim is included for a metal oxide semiconductor field effect transistor circuit fabricated on a silicon substrate.

Description

The The present invention relates to a circuit according to the preamble of claim 1.

BACKGROUND THE INVENTION

The present invention relates generally to high speed logic circuits and more particularly current-controlled CMOS (or ^{C3MOS ®)} logic circuits with inductive broadbanding.

Out several reasons CMOS is the logic family of choice for today's VLSI devices. by virtue of the complementary one The nature of its operation, the CMOS logic consumes no static power. Furthermore, CMOS scales just as easily with the technology. These two features are highly desirable with the dramatic growth in demand for electronic devices, which require a low power and are portable. Furthermore, with the focus of the industry for computer aided design (CAD) on the development of automated design tools for CMOS-based Technologies significantly reduce the development time and cost of CMOS VLSI devices reduced.

Of the however, one drawback of the CMOS logic family remains limited Speed. That is, conventional CMOS logic is not the highest achievable Has reached switching speeds made possible by modern sub-micron CMOS technologies become. As a result of the speed limitations of conventional CMOS logic had integrated circuit applications in the gigahertz frequency range looking for alternative technologies, such as bipolar Ultra-high speed circuits and gallium arsenide (GaAs). However, these alternative technologies have their own disadvantages, make them more of a special field with limited applications Compared to the silicon MOSFET have made a far has widespread use and support from the industry. In particular, compound semiconductors such as GaAs more receptive for defects, which degrade the performance of the device and have that Disadvantage of an increased Gate leakage current and reduced noise margins. Furthermore, could until now attempts of the reliable Preparation of high quality oxide layer using GaAs not done successfully become. This has made it difficult to produce GaAs FETs using the GaAs technology Junction Field Effect Transistors (JFETs) or Schottky Barrier Metal Semiconductor Field Effect Transistors (MESFETs) is limited. A major disadvantage of bipolar technology is u. a. the higher one Power consumption even when the circuits at low frequencies operate.

The US-A-5,196,895 relates to a device having the features of the preamble of claim 1.

It It is an object of the present invention to provide a circuit according to the preamble of claim 1, which defines the operating speed limits overcomes by conventional CMOS circuits.

The The object is achieved by a circuit according to claim 1. advantageous embodiments are in the dependent claims Are defined.

A significant improvement in the operating speed of CMOS circuits has been achieved by a family of CMOS logic based on a current-controlled mechanism. The current-gated CMOS (or C ³ MOS) logic is described in greater detail in co-pending application Serial No. 09 / 484,856 (Attorney Docket No. 019717-000310) entitled "Current-Controlled CMOS Logic Family" by Hairapetian, which is incorporated herein by reference in its entirety is inserted all purposes herein. the basic building block of the C ³ MOS logic family employs a pair of conventional MOSFETs, which control the current between a pair of load devices in response to a difference between a pair of input signals. Thus consumes the C ³ MOS logic static Power unlike traditional CMOS logic, but operates at much higher speeds.

According to one aspect of the invention, the present invention introduces inductive elements into the C ³ MOS circuits in order to further increase the operating speed of the circuits implemented in CMOS technology. In a particular embodiment, a coil inductor is inserted in series with the load devices of selected C ³ MOS structures that process high bandwidth data signals. The resulting serial combination of an inductor and a resistive element (eg, a polysilicon resistor) that is in parallel with an existing capacitive load provides high impedance at a higher bandwidth than would be possible without the presence of the inductor. Optimized values for the inductors ensure the proper choice of circuit intrinsic frequencies in the complex plane to achieve fast rise and fall times with appropriate overshoot and undershoot. The present invention combines the use of this type of shunt peaking with C ³ MOS circuits that provide differential and broadband process digital bilevel signals (ie digital as opposed to analog). The combination of these features allows the improvement of the intersymbol interference of the output signal without any increase in power consumption.

According to a further aspect of the invention a multiplexer circuit includes a C ³ MOS with inductive broadbanding to enable operation at ultra high frequencies.

According to another aspect of the invention, a flip-flop is implemented, the C ³ MOS with inductive broadbanding used to operate at ultra high frequencies.

According to one Another aspect of the invention combines a complementary metal oxide semiconductor (CMOS) logic circuit on the same silicon substrate, a current-controlled MOSFET circuit of the above type for high-speed signal processing with conventional CMOS logic that consumes no static power. Examples of such combined circuits include parallel / serial converters, serial / parallel conversion circuits, used in high-speed serial connections, High-speed PLL divider and the like.

Other Features and advantages of the invention will become apparent in light of the following detailed description and attached drawings clearly.

SHORT DESCRIPTION THE DRAWINGS

1 Fig. 10 is a schematic diagram of a differential pair with inductive bandwidth broadening implemented in CMOS technology;

2 (a) is a schematic diagram of the circuit of 1 without the shunt inductance.

2 B) is a simplified diagram showing the transient behavior of the circuit 2 (a) shows;

2 (c) is a graph showing the difference between an ideal and the C ³ MOS step response;

3 is a curve representing the step response of the circuit of 1 for four values of series inductances;

4 (a) Fig. 10 is a graph showing intersymbol interference (ISI) versus input pulse width for five values of series inductance;

4 (b) is a curve representing the output of the circuit of 1 with and without inductance shows;

5 Figure 12 shows a block diagram for a circuit that combines a C ³ MOS with Inductive Bandwidth Expansion, C ³ MOS, and conventional CMOS logic on a single silicon substrate to achieve the optimum compromise between speed and power consumption.

6 (a) Fig. 10 is a schematic diagram of a parallel / serial converter circuit using the features of the invention;

6 (b) is a detailed illustration of the in 6 (a) illustrated 2: 1 multiplexer;

7 Fig. 10 is a circuit diagram of a multiplexer employing the features of the present invention;

8th Fig. 12 is a circuit diagram of a flip-flop employing the features of the invention;

9 FIG. 10 is a simplified block diagram of a transceiver system using logic according to the present invention that combines C ³ MOS with Inductive Bandwidth Expansion, C ³ MOS and CMOS to facilitate interconnection of high speed optical fiber link channels.

DESCRIPTION THE SPECIFIC EMBODIMENTS

The present invention provides an ultrahigh-speed logic circuit implemented in complementary silicon metal oxide semiconductor (CMOS) process technology. Here, a distinction is made between the terminology "CMOS process technology" and "CMOS logic". The CMOS process technology, as used herein, generally refers to a plurality of well-established CMOS fabrication processes that form a field effect transistor over a silicon substrate with a gate terminal, typically made of a polysilicon material, on top of an insulating material such as silica is arranged. CMOS logic, on the other hand, refers to the use of complementary CMOS transistors (n-channel and p-channel) to form numerous logic gates and complex logic circuits, where no static current is consumed. The present invention employs current-controlled inductive bandwidth extension mechanisms to provide a family of very fast current-controlled CMOS logic (or C ³ MOS ^® ) with inductive bandwidth extension that can be fabricated using a variety of conventional CMOS process technologies but consumes static power unlike traditional CMOS logic. C ³ MOS inductive bandwidth expansion or current controlled metal oxide semiconductor field effect transistor (MOSFET) logic is used interchangeably herein.

In a preferred embodiment is the fundamental Building block of this logic family a NMOS differential pair with serial connected inductive and resistive (LR) loads.

The 1 shows the differential C3MOS base pair 200 with the shunt inductors L and the load capacitors C _L. A pair of n-channel MOSFETs 202 and 204 receive differential logic signals V _in + and V _in - at their respective gate terminals. resistive loads 206 and 207 in series with the shunt inductors 208 and 209 connect the drain terminals of the mosfets 202 respectively. 204 with the supply voltage VDD. The drain connections of the MOSFETS 202 and 204 form the outputs V _out - or V _out + of the differential pair. In a preferred embodiment, the shunt inductors 208 and 209 Coil inductors coupled to the substrate using standard techniques. resistive loads 206 and 207 may be constructed of either p-channel MOSFETs operating in their linear region or resistors constructed of, for example, polysilicon material. In a preferred embodiment, polysilicon resistors are used to resist the resistive loads 206 and 207 to implement what the speed of the differential pair 200 maximized. The source terminals of the n-channel MOSFETs 202 and 204 are with each other at the node 210 connected. An n-channel MOSFET 212 as a power source connects the node 210 to ground (or the negative power supply). A tuning voltage VB controls the gate terminal of the current source MOSFET 212 and adjusts the current I passing through the differential pair 200 flows. Depending on the difference signal at V _in + and V _in - one of the two input n-channel MOSFETs switches 202 and 204 while the other turns off. Thus, the entire current I flows in one branch of the differential pair, which pulls the drain terminal (V _out + or V _out -) of the transistor turned on to logic zero, whereas the drain of the other (turned off) transistor is pulled to logic on. A shunt boost according to the present invention may be selectively applied to the parts of an integrated circuit that require the bandwidth expansion.

In 1 The input levels V _in + and V _in - vary symmetrically in opposite directions when a digital signal is received. For example, if V _in + swings into positive, then V _in - would swing into negative. The voltage levels on V _out and V _out + oscillate in the same direction as the respective input signal levels. For reasons broadly described below, for broadband signals having frequencies in the range above five gigahertz, the step response of the circuit must be fast.

The 2 (a) respectively. 2 B) show the circuit of 1 with removed inductors, resulting in a C ³ MOS buffer, and a simple equivalent circuit showing the step response of the circuit. In this case, the output hopping waveform is characterized by an exponential waveform with a time constant RC. This waveform is in 2 (c) with the designation "C ³ MOS" and has an initial ramp of I / C _L. The difference between the ideal and the exponential step response is also in 2 (c) shown.

In the circuit of 2 (a) For example, the step response of the output signal would be controlled by the time constant RC. It is going out 2 (c) it is clear that the presence of the load resistance substantially slows down the transient step response. Therefore, when an input signal having a very fast rise time is received, the current rapidly increases to charge or discharge the load capacity. However, the step response of the output signal is controlled by the RC time constant and may have a longer rise time than the input pulse.

Considering the in 1 An inductance inhibits a change in current as is well known in the art. Now, as the drain current changes in response to an input signal, the inductor throttles the current flow through the resistor, so that the capacitance quickly discharges to produce an output signal with a small rise time.

The greater the value of the series inductance, the longer the full value of the current is available to charge / discharge the load capacitances. The 3 shows the step response for four different values of series inductance.

Out 3 it becomes clear that higher values of the inductance reduce the rise time. However, if the inductance value becomes too large, excessive overshoot will occur. To determine the optimum value of the inductance, the impulse response for a set of input pulses is under observed different pulse widths. The curves in 4 (a) show the relative error between the output pulse widths and the input pulse widths (referred to as intersymbol interference or ISI) for four different values of inductance.

From the curves of 4 (a) it becomes clear that given values R and C _L the optimal value for the inductance is given by: L S (opt) = (0.35) * C L R 2

The 4 (b) shows the output signals for the circuit of 1 with and without the inductors. The magnitude of the time intervals between the zero crossings of the output signal provides important information for interpreting the input signal. As in 4 (b) As shown, the rise of the zero-crossings of the waveform becomes sharper as the inductors are taken into the circuit, thus more precisely defining the time intervals between the zero-crossings and reducing the inter-symbol interference.

In one embodiment of the present invention, a transceiver circuit along a fiber optic channel performs a serial to parallel conversion on an input data stream at a bit rate of, for example, 10 Gb / s. After processing the lower-frequency deserialized data, the data is serially converted before being sent back to the fiber channel. According to the present invention, the parts of the circuit which process the highest speed data (e.g., the input of the deserial converter and the output of the serial converter) are implemented by means of a C ³ MOS inductive bandwidth extension circuit.

The 5 shows a simplified block diagram showing this exemplary embodiment of the invention. A C ³ MOS input circuit 40 with inductive bandwidth extension receives a high frequency input signal IN and outputs a first downdi vidierte version of the signal IN / n. A C ³ MOS MUX 42 then receives this first partitioned version and downscales the received signal by another factor m to output a second down-partitioned version of the IN / (nxm) signal. The lower frequency signal IN / (nxm) is then taken from the core circuit 44 processed in conventional CMOS logic. The frequency of the low frequency signal of the core logic is then increased by the reverse process to form an output signal at the original high input frequency.

The 6 (a) shows an exemplary 16: 1 serial converter according to the present invention. The serial converter includes a 16: 8 multiplexer 50 , which converts the data rate to 1.25 Gb / s, followed by an 8: 4 multiplexer 54 changing the data rate to 2.5 Gb / s. The data at 2.5 Gb / s are then using a 4: 2 multiplexer 56 converted to data at 5 Gb / s and finally using a 2: 1 multiplexer 58 to data at 10 Gb / s.

A flip-flop 60 the output resynchronizes the 10 Gb / s data to produce the final output data stream.

According to this embodiment of the invention, the circuit of 6 (a) conventional CMOS logic, the slower the multiplexer and the core processing circuit is used, with C ³ MOS logic for the multiplexors with medium rate and C ³ MOS logic with inductive broadbanding for the fastest multiplexer (ie, the 2: 1 multiplexer 58 ) as well as the output resynchronizing flip-flop 60 combine.

As shown by the numerous C ³ MOS logic elements with inductive bandwidth extension described below, all of the building blocks of any logic circuit can be constructed using C ³ MOS with the inductive bandwidth extension technique of the present invention. More complex logic circuits, such as shift registers, counters, frequency dividers, etc., can be constructed in C ³ MOS with Inductive Bandwidth Expansion using the basic elements described above. However, as noted above, both C ³ MOS and C ³ MOS inductive bandwidth expansion logic consumes static power. In addition, the fabrication of C ³ MOS logic with inductive bandwidth expansion is more expensive than with C ³ MOS or CMOS due to the need to add inductors to the IC.

The consumption of static current at C ³ MOS and / or C ³ MOS with inductive bandwidth expansion can become a limiting factor in certain large scale circuit applications. In an embodiment, as for example in the 5 and 6 (a) The present invention combines C ³ MOS inductive bandwidth expansion logic and C ³ MOS logic with conventional CMOS logic to achieve optimum balance between speed and power consumption. According to this embodiment of the present invention, an integrated circuit C ³ uses inductive bandwidth expansion MOS logic for the ultra-high speed portions (e.g., 10 Gb / s) of the circuit, C ³ MOS for the high speed portions of the circuit (e.g., 2.5-5 Gb / s). , and forth conventional CMOS logic for the relatively low speed parts. For example, the input circuit and the output circuit which forms an interface for high-speed signals and processes them, implemented using C ³ MOS with inductive broadbanding, in order to use an integrated circuit in ultra high speed applications. The circuit also uses C ³ MOS to divide down the frequency of the signals being processed at a sufficiently low frequency that conventional CMOS logic can be used. The core of the circuit is therefore implemented in accordance with the present invention using conventional CMOS logic that does not consume static power.

The 6 (b) shows an implementation of the 2: 1 multiplexer 58 in which the current output multiplexer circuit 52 C ³ MOS with inductive bandwidth extension used by an implementation in 7 is shown.

The 7 FIG. 10 shows an exemplary C ³ MOS Inductive Bandwidth Extension implementation for a 2: 1 multiplexer 62 , Similar to the other C ³ MOS logic gates, the multiplexer includes 62 a differential pair for each input. The positive (left) input transistor of each differential pair is VDD by means of a first transistor 206 coupled in series with a first series inductance 208 and the negative (right) input transistor of each differential pair is connected to VDD by means of a second resistor 207 coupled in series with a second series inductance 209 connected is. The multiplexer 62 further includes selection transistors 502 and 504 between the common source terminals of the differential pairs and the current source transistor 506 are inserted. By driving one of the selection input signals SELA or SELB, the adjustment current is controlled to the differential pair associated with the selection transistor. Thus, the signal SELA controls the adjustment current to the differential pair with the terminals AP and ON, and the signal SELB controls the adjustment current to the differential pair with the inputs BP and BN.

und erzeugt differenzielle Ausgangssignale QI und

. Die differenziellen Ausgangssignale QI und

werden dann auf differenzielle Eingänge des zweiten Latches 804 geschaltet. Die differenziellen Ausgänge Q und

des zweiten Latches 804 liefern die Ausgänge des Flip-Flops 800. Die Eingangstransistoren von jedem Latch sind mit VDD mittels eines Widerstands und einer Shunt-Induktivität, die in Serie gekoppelt sind, verbunden.The 8th FIG. 12 shows an exemplary embodiment of a C ³ MOS Inductively Bandwidth Enhanced Flip-Flop for use as a resynchronizing flip-flop in the serial converter of FIG 5 , A C ³ MOS master-slave flip-flop 800 According to the present invention, by combining two latches 802 and 804 be generated. A first latch 802 receives differential input signals D and

and generates differential output signals QI and

, The differential output signals QI and

are then applied to differential inputs of the second latch 804 connected. The differential outputs Q and

of the second latches 804 deliver the outputs of the flip-flop 800 , The input transistors of each latch are connected to VDD by means of a resistor and a shunt inductor coupled in series.

It should be understood that all the C ³ MOS logic elements, of which numerous examples are described in the above referenced commonly assigned patent application, the inductive broadbanding technique can apply, according to the present invention.

According to an embodiment of the present invention, the technique of the combination of C ³ MOS inductive bandwidth expansion circuit, the C ³ MOS circuit and the CMOS circuit in a transceiver of FIG 9 shown used type. The exemplary transceiver off 9 is commonly found along fiber optic channels in high speed telecommunications networks. The transceiver includes at its input a photodetector and a driver circuit 1200 receiving the input signal from the fiber optic channel. The circuit 1200 converts the fiber optic signal into data packets and delivers it to a circuit 1202 for clock recovery (CDR). The CDR circuit 1202 recovers the clock and clock signals that may be in a frequency range above 10 GHz or higher. Established telecommunications standards require that the transceiver perform various functions, including data monitoring and error correction. These functions are performed at lower frequencies. Therefore, the transceiver uses a demultiplexer 1204 in the 5 and 6 and deserializes the 10Gb / s data stream into, for example, 16 parallel signals having a bit rate of approximately 622 Mb / s. An application specific integrated circuit (ASIC) 1206 then performs the functions of observation and error correction at the lower (622) Mb / s bitrate. A Multiplexer and Clock Multiplication Unit (CMU) 1208 converts the parallel signals back into a single bit stream of 10Gb / s. This signal is then applied to the fiber optic channel by means of a laser driver 1212 returned. The combined C ³ MOS Inductive Bandwidth Expansion / C3MOS / CMOS technique of the present invention enables the production of the demultiplexer 1204 , the ASIC 1206 and the multiplexer and CMU 1208 on a single silicon chip. That is, the demultiplexer 1204 and the multiplexer and the CMU 1208 are implemented in C ³ MOS with Inductive Bandwidth Expansion / C ³ MOS, where the ASIC is implemented in conventional CMOS.

Accordingly, the present invention provides various circuit techniques for implementation ultrahigh-speed circuiting using current-controlled CMOS (C ³ MOS) logic and C ³ MOS inductive bandwidth expansion logic, fabricated using conventional CMOS process technology. In one embodiment, the present invention advantageously combines high speed C ³ MOS logic with inductive broadbanding / C ³ MOS logic with inductive broadbanding and C ³ MOS logic with conventional CMOS logic with low power. According to this embodiment, circuits such as transceivers can be fabricated along fiber optic channels on a single chip, with the ultrahigh speed portions of the circuit using C ³ MOSs with Inductive Bandwidth Expansion / C ³ MOS and the comparatively slower parts of the circuit using conventional CMOS logic.

While that above a complete Description of the preferred embodiment of the present invention Invention is, it is possible numerous alternatives, modifications and equivalents to use. For example can, even if coil inductances and poly resistors in the preferred embodiment Other techniques used by professionals can be used known in this field. Therefore, the scope of the present Invention is not determined with reference to the above description but should instead be related with reference to the appended claims with their full range of equivalents be determined.

Claims (10)

A Current Controlled Metal Oxide Semiconductor Field Effect Transistor MOSFET Circuit ( 200 ) fabricated on a silicon substrate, comprising: first and second n-channel MOSFETs ( 202 . 204 with their source terminals connected to a first node, whose gate terminals are coupled to receive first and second differential logic signals, and whose drain terminals are coupled to first and second output nodes, respectively; first and second RL circuits connected between the first and second output nodes and a logic high level, respectively; first and second capacitive loads (C _L ), respectively, coupled to the output nodes; the circuit being characterized in that: a current source n-channel MOSFETs ( 212 ) is coupled between the source terminals of the first and second select n-channel MOSFETs and a logic low level. The circuit of claim 1, wherein: the magnitudes of C _L , R and L are approximately equal to the values defined by the relationship L = (0.35) * C L R 2 be determined. A Current Controlled Metal Oxide Semiconductor Field Effect Transistor MOSFET Circuit ( 200 ) fabricated on a silicon substrate, comprising: a multiplexer circuit including first and second n-channel MOSFETs, the first and second output nodes of which have a true output and a complementary output, respectively; further comprising: third and fourth n-channel MOSFETs having their source terminals coupled to a second node whose gate terminals are coupled to receive a second pair of differential logic signals and whose drain terminals are connected to the true outputs; coupled to a complementary output; first and second RL series circuits are coupled to either the true output or to the complementary output having a logic high level; a first select n-channel MOSFET having a drain coupled to the first node, a gate coupled to receive a first select logic signal, and a source; and a second select n-channel MOSFET having a drain coupled to the second node, a gate coupled to receive a second select logic signal, and a source. The circuit of claim 3, further comprising: first and second capacitive loads C _L coupled to the true output and the complementary output, respectively, wherein the sizes of C _L , R and L are approximately equal to the values determined by the relationship L = (0.35) * C _L R ² are given. A Current Controlled Metal Oxide Semiconductor Field Effect Transistor MOSFET Circuit ( 200 ) fabricated on a silicon substrate with a flip-flip having a first and a second clocked latch (FIG. 802 . 804 ) having; wherein the first clocked latch further comprises: first and second n-channel MOSFETs whose source terminals are coupled together and whose gate terminals are respectively coupled to receive a pair of the differential logic signals and whose drain terminals are connected to a first output; connected to a second output; a first clocked n-channel MOSFET having a drain connected to the sources of the first and second n-channel MOSFETs ge has a gate coupled to receive a first clock signal CK and a source terminal; third and fourth n-channel MOSFETs whose source terminals are coupled together and whose gate terminals and drain terminals, respectively, are cross-connected to the first output and the second output; a second clocked n-channel MOSFET having a drain coupled to the sources of the third and fourth n-channel MOSFETs, a gate coupled to receive a second clock signal CKP, and a source ; wherein the second clocked latch further comprises fifth and sixth n-channel MOSFETs whose source terminals are connected together, whose gate terminals are coupled to receive a pair of differential logic signals respectively, and their drain terminals are connected to a third output and connected to a fourth output; a third clocked n-channel MOSFET having a drain terminal coupled to the sources of the fifth and sixth n-channel MOSFETs, a gate terminal coupled to receive a second clock signal CKB, and a source terminal ; seventh and eighth n-channel MOSFETs whose sources are connected together and whose gate and drain are cross-connected to the third output and the fourth output; a fourth clocked n-channel MOSFET having a drain coupled to the sources of the seventh and eighth n-channel MOSFETs, a gate coupled to receive a first clock signal CK, and a source ; third and fourth LR series circuits each coupling the third output and the fourth output to a logic high level; wherein the gate terminals of the fifth and sixth n-channel MOSFETs in the second clocked latch are coupled to the first output and the second output of the first clocked latch, respectively. The circuit of claim 3, further comprising: first and second capacitive loads C _L coupling the true output and the complementary output of the second latch, respectively, wherein the magnitudes of C _L , R and L are at least equal to the values defined by the relationship L = (0.35) * C _L R ² can be determined. A Current Controlled Metal Oxide Semiconductor Field Effect Transistor MOSFET Circuit ( 200 ) fabricated on a silicon substrate, comprising: a first implemented circuit ( 40 ) having first and second output nodes and power supply nodes using a current controlled complementary metal oxide semiconductor C ³ MOS inductive bandwidth extension logic, wherein logic levels are indicated by current control in one or two or more branches in response to the differential input signals, and wherein the first and second RL circuit connected in series connects the first and second output nodes to the first and second power supply nodes, the first circuit receiving an input signal having a first frequency and generating a first output signal having a second frequency less than the first frequency; is set up; a second implemented circuit ( 42 ) using a current controlled complementary metal oxide semiconductor C ³ MOS logic, wherein the logic levels are indicated by current controlling in one or two or more branches in response to the differential input signals, the second circuit receiving the first output signal and generating a second output signal having a third frequency less than the second frequency; and a third implemented circuit ( 44 ) using conventional complementary metal oxide semiconductor CMOS logic, wherein substantially no static current is consumed and the second circuit is configured to receive and process the output signal at the third frequency. The MOSFET circuit of claim 4, wherein the first circuit comprises an input circuit implemented using C ³ MOS inductive bandwidth extension logic and configured to deserialize the input signal into a plurality of lower frequency signals. The MOSFET circuit of claim 5, wherein the second Circuit a conventional CMOS logic having for processing the plurality of signals with a lower Frequency for generating a plurality of processed signals with lower frequency is set up. The MOSFET circuit of claim 4, wherein the circuit comprises a transceiver and the transceiver comprises: a first input-to-serial converter implemented by means of C ³ MOS inductive bandwidth extension logic and for receiving the input signal at the first frequency and for generating a plurality of parallel first signals at a second frequency is set up; a second input-to-serial converter implemented by means of C ³ MOS logic and for receiving the first output signal at the second frequency and generating a plurality of paral lelen third signals at the third frequency is set up; a core circuit implemented by CMOS logic and coupled to the input-to-serial converter, the core circuit being arranged to process the plurality of parallel signals at the third frequency; a first output-to-serial converter implemented by C ³ MOS logic and coupled to the core circuit, the serial converter configured to receive the plurality of parallel signals and generate a plurality of parallel second output signals at the second frequency is; and a second output-to-serial converter implemented by means of C ³ MOS inductive bandwidth extension logic and coupled to the first serial converter, the second serial converter for receiving the plurality of parallel second signals and generating a single one Output signal is set at the first frequency.