DE2008664A1 - Galvanically or chemically assisted mechanic - Google Patents
Galvanically or chemically assisted mechanicInfo
- Publication number
- DE2008664A1 DE2008664A1 DE19702008664 DE2008664A DE2008664A1 DE 2008664 A1 DE2008664 A1 DE 2008664A1 DE 19702008664 DE19702008664 DE 19702008664 DE 2008664 A DE2008664 A DE 2008664A DE 2008664 A1 DE2008664 A1 DE 2008664A1
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- deposition
- metal
- workpiece
- galvanically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000003054 catalyst Substances 0.000 claims abstract description 4
- 238000007517 polishing process Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000454 electroless metal deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 12
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000011089 mechanical engineering Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000369 oxido group Chemical group [*]=O 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/22—Electroplating combined with mechanical treatment during the deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1806—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by mechanical pretreatment, e.g. grinding, sanding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
"Verfahren zur Politur von metallischen Werks t iic} berflachenl' Die Erfindung bezieht sich auf ein Verwahren zur Politur von Metalloberflächen unter Zuhilfnahme der stromlosen und/oder elektrolytischen Metallabscheidung. "Process for polishing metallic works t iic} überflachenl ' The invention relates to a storage for polishing metal surfaces under Aid for electroless and / or electrolytic metal deposition.
Durch Politur erzeugte, ebene und glänzende Metalloberflächen werden nicht nur für dekorative Zwecke,sondern auch in vielfältigen Maße für technische Zwecke in der optischen, elektrotechnischen un Maschinenbau-Industrie benötigt. Beispielsweise verwendet man zur Herstellung diinnor Magnetspeichorschichten in der elektronischen Industrie extrem ebene und glatte Kupferplatten als Schichtträger. Nach dem Stand der Technik kennt man zur Verringerung der Oberflächenrauhigkeit metallischer Werkstücke zwei Gruppen von Verfahren, nämlich Materialabtragverfahren und Materialaufbauverfahren. Zu den Abtragverfahren zählen die meehanieche und chemische Politur mit Hilfe von Poliermitteln oder Poleirlösungen, die anodische elektrolytische Politur und die kombinierte anodisch-mechanische Politur, die eine Kombination der zuerst genannten Verfahren darstellt. Zu den Aufbauverfahren rechnet man die kathodische galvanische Abscheidung von metallischen Oberflächenschichten auf dem Werstück mit Hilfe einebnender galvanischer Bäder und die Einebnung von Oberflächenrauhigkeit durch Beschichten des Werkstticks beispielsweise nit Zinn und nachfolgendem Aufschmelzen dieser Oberflächenschicht, so daß während des Schmelzvorgangs das schmelzende Zinn in Oberflächenvertiefungen fließt und dort erstarrt. Mit Hilfe der vorstehend genannten Methoden kann nan je nach Ausgangszustand Material und Art des Werkstücks, apparativen und zeitllchem Aufwand zu mehr oder weniger qualitativ hochwertigen Oberflächen gelangen. Oftmals ist es außerdem zweckmäßig, verschiedene Methoden nacheinander anzuwenden, um auf diese Weise zu Endreuhigkeiten< 0,1 /un zu kommen, Letzteres ist nach heutigem Stand der Technik fast ausschließlich dann der Fall, wenn das Werkstück nit einer korrosionshermenden Schutzschicht versehen werden soll. In solchen Fällen wird das Werkstück beispielsweise vor oder nach den Vergolden regelriäßig poliert.Even and shiny metal surfaces produced by polishing not only for decorative purposes, but also in various dimensions for technical purposes Purposes in the optical, electrotechnical and mechanical engineering industries. For example, one uses for the production of diinnor magnetic storage layers in In the electronics industry, extremely flat and smooth copper plates are used as a layer carrier. According to the state the technology is known to reduce surface roughness metallic workpieces two groups of processes, namely material removal processes and material construction method. The removal processes include mechanical and chemical Polishing with the help of polishing agents or polishing solutions, the anodic electrolytic Polish and the combined anodic-mechanical polish, which is a combination of the represents the first mentioned procedure. The cathodic method is counted among the construction methods galvanic deposition of metallic surface layers on the workpiece Help leveling galvanic baths and the leveling of surface roughness by coating the workpiece, for example with tin, and then melting it on this surface layer, so that during the melting process the melting tin flows into surface depressions and solidifies there. With the help of the above Methods can nan depending on the initial state material and type of workpiece, apparatus and the time it takes to produce more or less high-quality surfaces reach. It is also often useful to use different methods one after the other to be used in order to arrive at final accuracies <0.1 / un in this way, the latter According to the current state of the art, this is almost exclusively the case when that Workpiece with a corrosion-resistant Protective layer are provided target. In such cases, the workpiece is, for example, before or after the gold plating regularly polished.
Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Erzeugung netallischer Obxrfläehen nit sehr geringer Endrauhigkeit, das also hauptsächlich zur Verringerung der Mikrorouhigkeit einer Metalloberilach- eingesetzt werden kann.The present invention relates to a method of production Metallic surfaces with very little final roughness, that is mainly can be used to reduce the micro-roughness of a metal surface.
Die Erfindung besteht darin, daß gleichzeitig rait einen mechanischen Poliervorgang auf den Werkstückkoberflächen Metall abgeschieden wird.The invention consists in that at the same time rait a mechanical Polishing process on the workpiece surfaces metal is deposited.
Das Verfahren bedient sich also einer Kombination von mechanischen Abtragverfahren und chemischen oder elektrochemischen Aufbauverfahren und stellt eine rationell. und effektvolle Verbesserung der bekannten Verfahren dar. Das Prinzip dieses Verfahrens, das in folgenden kurz "Abscheidungspolitur" genannt werden soll, läßt sich an besten anhand eines schematisch in Fig. 1 dargestellten Oberflächenprofils eines Werkstücks aufzeigen. Bearbeitet man diese Oberfläche eines Werkstiicks durch herknuliche mechanische oder elektrochemische Politur, so werden hauptsächlich die Spitzen und sonstige Erhöhungen abgetragen, da an diesen geonetrisch und energetisch bevorzugten Stellen der nechanische oder elektrochenische Angriff zuerst einsetzt.The process therefore uses a combination of mechanical Removal processes and chemical or electrochemical build-up processes and represents a rational one. and effective improvement of the known processes. The principle this process, which in the following will be called "deposition polishing" for short, can best be based on a surface profile shown schematically in FIG of a workpiece. If you work through this surface of a workpiece conventional mechanical or electrochemical polishing, it is mainly the sharpen and other elevations, as geonetrically and energetically preferred on these Put the mechanical or electrical attack on first.
Die Vertiefung, wie Poren oder Rillen, werden davon zunächst kaum beeinflußt. Beim Einebnen nach herkömmlichen Aufbauverfahren, beispielsweise durch galvanische Metall abscheidung, wird durch entaprochende Badzusätze, sogenannte Inhibitoren, die Abscheidung an den Mikroerhöhungen stärker verzögert als in den Mikrotälern, was auf die unterschiedliche Nachlieferung der Zusatztoilchen an die verschiedenen Stellen des Nikroprofils zurückzuführen ist.The indentations, such as pores or grooves, are hardly affected at first influenced. When leveling according to conventional construction methods, for example by Electroplating metal deposition is achieved by means of entaprochende bath additives, so-called Inhibitors, the deposition on the micro-elevations more delayed than in the Micro valleys, which is due to the different subsequent delivery of additional toilets to the different parts of the Nikroprofile.
Dieser Effekt führt dann zur allmählichen Verflachung und Einebnung der Oberfläche des Werkstücks.This effect then leads to gradual flattening and leveling the surface of the workpiece.
Das erfindungsgemäße Verfahren des "Abscheidungspolierene" bedient sich beider Effekte, nanlich des Abtragens der Mikroerhöhungen durch mechanische Vorgänge und des gleichzeitigen Auffüllens der Mikrotäler durch eine stronlose, chemische Metallabscheidung oder elektrolytische Metallabscheidung vorwiegend in diesem Mikrovertiefungen. Um diese beiden Effekte zu erzielen, wird einen stronlos oder elektrolytisch arbeitenden Bad ein Poliermittel zugesetzt und das Werkstück mit dieser Suspension behandelt. Beim elektrolytischen "Abscheidungspolieren" wird dabei das Werkstück als Kathode geschaltet, Beim erfindungsgemäßen "Abscheidungspolieren" verhindert oderverzögert also der mechanische Vorgang das Weiterwachsen der Mikroerhähungen, während das Zuwachsen der Mikrovertiefungen nicht beeinflußt wird.The "deposition polishing" method of the present invention serves both effects, namely the removal of the micro-elevations by mechanical Processes and the simultaneous filling of the micro valleys by means of an electricityless, chemical metal deposition or electrolytic metal deposition predominantly in this microwell. In order to achieve these two effects, one becomes without electricity or a polishing agent is added to the electrolytic bath and the workpiece treated with this suspension. In electrolytic "deposition polishing" the workpiece as Connected cathode, when the invention So "deposit polishing" prevents or delays the mechanical process The micro-elevations continue to grow while the micro-depressions do not being affected.
Eine Variante dieses Verfahrens besteht darin, daß vor oder bei der Anwendung eines stromlos arbeitenden Bades eine Katalysatorlösung der Poliermittelsuspension zugesetzt wird und diese so veränderte Suspension auf das Werk stück einwirkt. Die Katalysatorlösung kann beispielweise Palladiumchlorid enthalten, so daß sich der Werkstückoberfläche Palladiumkeime bilden, die die stromlose Metallabscheidung katalysieren. Das erfindungsgemäße Verfahron beschränkt sich nicht nur auf die gleichzeitige Anwendung von Poliermittel und stromlosem oder elektrolytischem Bad zur Metallabscheidune, wobei das Poliermittel im Bad suspendicrt ist. Vielmehr kann-das Poliermittel als Suspension getrennt vom Bad einer Poliermaschine zugeführt werden, so daß es möglich ist, den Poliermittelanteil zu steuern. Auf diese Weise ist es nöglich, durch allmähliches Reduzieren des ersten Poliermittels ein zweites, feinkornigeres dem Wirkmedium zuzuführen oder den Poliermittelanteil mehr und mehr auszuschalten, so daß am Ende des Bearbeitungsprozesses nur noch Metall auf dem Werkstück niedergeschlagen wird, aber ein nennenswerter Materialabtrag mohr erfolgt. Die zuletzt genannte Methode kann bespielsweise dann zweckmäßig angewandt worden, wenn das Werkstück nach der Politur mit einer korrosionshenmenden Schutzschicht, z. a. aus Gold, beachichtet werden soll und die Werkstückoberfläche bereits seine gewünschte Güte erreicht hat. Als Polierrlittel können bei den erfindungsgenonen Verfahren handelsübliche Metalloxido, -carbonate, silicate, Dianantpulver und andere als poliermittel üblicho Stoffe in geeigneten Trägern bzw. Dispergamitteln verwendet werden. Als solche I)ispergiernittel können beispielsweise stromlos arbeitende Kupfer-, Nickel-, Goldbäder oder entsprechende galvanische Bäder dienen, In den folgenden Beispielen wird das erfindungsgemäße Verfahren näher erläutert.A variant of this method is that before or at the Application of an electroless bath a catalyst solution of the polishing agent suspension is added and this modified suspension acts on the workpiece. the Catalyst solution can contain, for example, palladium chloride, so that the Palladium nuclei form on the workpiece surface, which catalyze the electroless metal deposition. The method according to the invention is not limited to simultaneous use of polishing agents and electroless or electrolytic bath for metal deposition, the polishing agent being suspended in the bath. Rather, the polishing agent can than Suspension can be fed separately from the bath to a polishing machine, making it possible is to control the amount of abrasive. In this way it is possible, by gradual Reduce the first polishing agent to supply a second, finer-grained one to the active medium or to switch off the polishing agent content more and more, so that at the end of the machining process only metal is deposited on the workpiece will, but a Significant material removal takes place. The last-mentioned method can, for example Appropriately used when the workpiece after polishing with a corrosion-inhibiting protective layer, e.g. a. of gold, should be noted and which Workpiece surface has already reached its desired quality. As a polishing agent commercially available metal oxido, carbonates, Silicates, dianant powder and other substances commonly used as polishing agents in suitable Carriers or dispersants are used. As such, I) dispersants can for example electroless copper, nickel, gold baths or equivalent Galvanic baths are used. In the following examples, the inventive Procedure explained in more detail.
Beispiel 1 Eine Kupferplatte des Forr.ats 60 x 50 =.l und einer Dicke von 2 mm soll als Substrat für diinne Permalloyspeicherschichten dienen und deshalb oinseitig auf eine Endrauhigkeit von < 0,02 /un poliert werden. Diese Platte rotiert im Gegensinn auf oinen Poliertellen der sich ebenfalls dreht und mit einen weichen Wolltuch bespannt ist, Auf den Polierteller wird laufend eine Suspension von Aluminiumoxid mit einer Korngröße < 0,5 #m und einem handelsüblichen, bei Raumtemperatur stromlos arbeitenden Kupferbed getropft, Das Gewichtsvcrhä.ltnis von Poliersubstanz Zu Kupferbad beträgt 1 : 50. Nnch einer "Abscheidungspolitur" von 10 min war die Oberflh.chenrauhigkeit der Kupferplatte von anfangs 0,1 #m auf die geforderte Endrauhigkeit von 0,01 - 0,02 #m verringert. Das Oberflächenprofildiagramm dieser Kupferplatte ist in Fig. 2 - 3 dargestellt. Fig. 2 gibt den Ausgangszustand der Platte und Fig. 3 den Zustand nach SOninütigor gleichzeitiger Politur und Kupferabscheidung wieder. Zun Vergleich ist in Fig. 4 das Oberflächenprofildiagramm einer Kupferplatte aufgezeigt, die 10 min lediglich mit Alui:iintumoxid einer Korngröße <0,5 72r unter gleichen Bedingungen poliert wurde. Die Rauhigkeit dieser Oberfläche liegt günstigenfalls bei 0,04 - 0,05 Beispiel 2 Eine Kontaktfeder aus Kupfer-Berylium soll zur Verbesserung der Kontaktgabe einseitig optimal poliert und zur Korrosionsschutz vergoldet werden. Dazu wird die Feder nit Hilfe einer geeigneten Halterung auf den mit einen Wolltuch bespannten rotierenden Polierteller aufgepreßt. Die Feder wird als Kathode geschaltet, der Polierteller aus Edelstahl als Anode. Als Elektrolyt dient ein saures handelsübliches Goldbad, dem in Gewichtsverhältnis 30 : 1 feinkörniges Aluriniunoxid als Poliersubstanz zugesetzt wird. Die kathodische Stromdichte beträgt während der "Abscheidungspolitur" 2 A/dn2, Die Dauer des Polier- und Abscheidungsvorgangs beträgt 5 min. Während dieeer Zeit wird die Oberfläche der Feder auf eine Endrauhigkeit von < 0,03 #m poliert und mit einer ca. 2 #m dicken Goldschicht Uberzogen. Die Ausgangsrauhigkeit von < 0,03 #m Example 1 A copper plate with a format of 60 x 50 = .l and a thickness of 2 mm should serve as a substrate for thin permalloy storage layers and therefore polished on the inside to a final roughness of <0.02 / un. This record rotates in the opposite direction on oinen polishing points which also rotates and with one soft woolen cloth is covered Polishing plate is ongoing a suspension of aluminum oxide with a grain size <0.5 #m and a commercially available, at room temperature electroless copper bed dripped, the weight ratio from polishing substance to copper bath is 1:50. After a "deposition polish" After 10 minutes, the surface roughness of the copper plate was initially 0.1 μm the required final roughness of 0.01 - 0.02 #m is reduced. The surface profile graph this copper plate is shown in Figs. 2-3. Fig. 2 gives the initial state of the plate and FIG. 3 the state after SOninütigor simultaneous polishing and copper deposition again. For comparison, Fig. 4 is the surface profile diagram of a copper plate shown, the 10 min with Alui: iintumoxid a grain size <0.5 72r was polished under the same conditions. The roughness of this surface lies ideally at 0.04-0.05 Example 2 A contact spring made of copper beryllium should be optimally polished on one side to improve contact and for corrosion protection to be gold-plated. For this purpose, the spring is attached to the with a rotating polishing plate covered with a woolen cloth. The pen will Connected as a cathode, the polishing plate made of stainless steel as an anode. An acidic, commercially available gold bath is used as the electrolyte, which is in weight ratio 30: 1 fine-grain aluminum oxide is added as a polishing substance. The cathodic The current density during the "deposition polishing" is 2 A / dn2. and deposition time is 5 minutes, during which time the surface becomes The nib is polished to a final roughness of <0.03 #m and with an approx. 2 #m thick gold layer. The initial roughness of <0.03 #m
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702008664 DE2008664A1 (en) | 1970-02-25 | 1970-02-25 | Galvanically or chemically assisted mechanic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702008664 DE2008664A1 (en) | 1970-02-25 | 1970-02-25 | Galvanically or chemically assisted mechanic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2008664A1 true DE2008664A1 (en) | 1971-09-09 |
Family
ID=5763263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702008664 Pending DE2008664A1 (en) | 1970-02-25 | 1970-02-25 | Galvanically or chemically assisted mechanic |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2008664A1 (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000026443A3 (en) * | 1998-11-03 | 2000-10-12 | Nutool Inc | Method and apparatus for electrochemical mechanical deposition |
| WO2000077278A1 (en) * | 1999-06-14 | 2000-12-21 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
| WO2001032362A1 (en) * | 1999-11-04 | 2001-05-10 | Philips Semiconductors Inc. | Method and apparatus for deposition on and polishing of a semiconductor surface |
| US6328872B1 (en) | 1999-04-03 | 2001-12-11 | Nutool, Inc. | Method and apparatus for plating and polishing a semiconductor substrate |
| US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6409904B1 (en) | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
| WO2002023613A3 (en) * | 2000-09-15 | 2002-07-25 | Rodel Inc | Metal cmp process with reduced dishing |
| US6773576B2 (en) | 2000-05-11 | 2004-08-10 | Nutool, Inc. | Anode assembly for plating and planarizing a conductive layer |
| US7204924B2 (en) | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Method and apparatus to deposit layers with uniform properties |
| US7204917B2 (en) | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
| US7341649B2 (en) | 1998-12-01 | 2008-03-11 | Novellus Systems, Inc. | Apparatus for electroprocessing a workpiece surface |
| US7378004B2 (en) | 2000-02-23 | 2008-05-27 | Novellus Systems, Inc. | Pad designs and structures for a versatile materials processing apparatus |
| US7416975B2 (en) | 2005-09-21 | 2008-08-26 | Novellus Systems, Inc. | Method of forming contact layers on substrates |
| US7425250B2 (en) | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
| US7427337B2 (en) | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
| US7648622B2 (en) | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
| US7947163B2 (en) | 2006-07-21 | 2011-05-24 | Novellus Systems, Inc. | Photoresist-free metal deposition |
| US8236160B2 (en) | 2000-08-10 | 2012-08-07 | Novellus Systems, Inc. | Plating methods for low aspect ratio cavities |
| US10876198B2 (en) | 2015-02-10 | 2020-12-29 | Arcanum Alloys, Inc. | Methods and systems for slurry coating |
| US11261516B2 (en) | 2016-05-20 | 2022-03-01 | Public Joint Stock Company “Severstal” | Methods and systems for coating a steel substrate |
-
1970
- 1970-02-25 DE DE19702008664 patent/DE2008664A1/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6402925B2 (en) | 1998-11-03 | 2002-06-11 | Nutool, Inc. | Method and apparatus for electrochemical mechanical deposition |
| WO2000026443A3 (en) * | 1998-11-03 | 2000-10-12 | Nutool Inc | Method and apparatus for electrochemical mechanical deposition |
| US6176992B1 (en) | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| US6676822B1 (en) | 1998-11-03 | 2004-01-13 | Nutool, Inc. | Method for electro chemical mechanical deposition |
| US7204924B2 (en) | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Method and apparatus to deposit layers with uniform properties |
| US7427337B2 (en) | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
| US7670473B1 (en) | 1998-12-01 | 2010-03-02 | Uzoh Cyprian E | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
| US7425250B2 (en) | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
| US6409904B1 (en) | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
| US7341649B2 (en) | 1998-12-01 | 2008-03-11 | Novellus Systems, Inc. | Apparatus for electroprocessing a workpiece surface |
| US7204917B2 (en) | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
| US6837979B2 (en) | 1998-12-01 | 2005-01-04 | Asm-Nutool Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
| US6328872B1 (en) | 1999-04-03 | 2001-12-11 | Nutool, Inc. | Method and apparatus for plating and polishing a semiconductor substrate |
| US6797132B2 (en) | 1999-04-03 | 2004-09-28 | Nutool, Inc. | Apparatus for plating and polishing a semiconductor workpiece |
| US7309406B2 (en) | 1999-04-03 | 2007-12-18 | Novellus Systems, Inc. | Method and apparatus for plating and polishing semiconductor substrate |
| WO2000077278A1 (en) * | 1999-06-14 | 2000-12-21 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
| US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6905588B2 (en) | 1999-09-17 | 2005-06-14 | Asm Nutool, Inc. | Packaging deposition methods |
| US7147766B2 (en) | 1999-09-17 | 2006-12-12 | Asm Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| WO2001032362A1 (en) * | 1999-11-04 | 2001-05-10 | Philips Semiconductors Inc. | Method and apparatus for deposition on and polishing of a semiconductor surface |
| US6341998B1 (en) | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
| US7378004B2 (en) | 2000-02-23 | 2008-05-27 | Novellus Systems, Inc. | Pad designs and structures for a versatile materials processing apparatus |
| US6773576B2 (en) | 2000-05-11 | 2004-08-10 | Nutool, Inc. | Anode assembly for plating and planarizing a conductive layer |
| US8236160B2 (en) | 2000-08-10 | 2012-08-07 | Novellus Systems, Inc. | Plating methods for low aspect ratio cavities |
| WO2002023613A3 (en) * | 2000-09-15 | 2002-07-25 | Rodel Inc | Metal cmp process with reduced dishing |
| US7648622B2 (en) | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
| US7416975B2 (en) | 2005-09-21 | 2008-08-26 | Novellus Systems, Inc. | Method of forming contact layers on substrates |
| US7704880B1 (en) | 2005-09-21 | 2010-04-27 | Novellus Systems, Inc. | Method of forming contact layers on substrates |
| US7947163B2 (en) | 2006-07-21 | 2011-05-24 | Novellus Systems, Inc. | Photoresist-free metal deposition |
| US8500985B2 (en) | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
| US10876198B2 (en) | 2015-02-10 | 2020-12-29 | Arcanum Alloys, Inc. | Methods and systems for slurry coating |
| US11261516B2 (en) | 2016-05-20 | 2022-03-01 | Public Joint Stock Company “Severstal” | Methods and systems for coating a steel substrate |
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