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DE19941542A1 - Automatic tuning method and device for HF impedance matching network for plasma process uses cyclic measurement of electrical parameters and adjustment of tuning components in alternation - Google Patents

Automatic tuning method and device for HF impedance matching network for plasma process uses cyclic measurement of electrical parameters and adjustment of tuning components in alternation

Info

Publication number
DE19941542A1
DE19941542A1 DE1999141542 DE19941542A DE19941542A1 DE 19941542 A1 DE19941542 A1 DE 19941542A1 DE 1999141542 DE1999141542 DE 1999141542 DE 19941542 A DE19941542 A DE 19941542A DE 19941542 A1 DE19941542 A1 DE 19941542A1
Authority
DE
Germany
Prior art keywords
tuning
adjustment
impedance matching
during
matching network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE1999141542
Other languages
German (de)
Inventor
Edgar Schachler
Roland Gesche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aurion Anlagentechnik GmbH
Original Assignee
Aurion Anlagentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aurion Anlagentechnik GmbH filed Critical Aurion Anlagentechnik GmbH
Priority to DE1999141542 priority Critical patent/DE19941542A1/en
Publication of DE19941542A1 publication Critical patent/DE19941542A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The tuning method and device for a HF impedance matching network uses measurement of electrical values required for tuning during the cyclic switching in times, with corresponding adjustment of the electrical tuning components during the switching out times.

Description

Gegenstand der Anmeldung, AnwendungsbereicheSubject of registration, areas of application

Zur Behandlung von Werkstücken mit Niederdruck-Gasentladungen werden in vie­ len Fällen elektrische Hochfrequenzanregungen, zum Beispiel mit einer Frequenz von 13,56 MHz, verwendet. Zur Anpassung der Plasmalast an die Generatorimpe­ danz finden hierbei meist automatische Anpassungsnetzwerke Verwendung. Viele Plasmaanwendungen laufen heute im Taktzeitbetrieb mit kurzen Behandlungszeiten im Sekundenbereich ab. Hierfür sind die bekannten automatischen Anpassungs­ netzwerke nicht geeignet.For the treatment of workpieces with low-pressure gas discharges are in vie len cases of high-frequency electrical excitations, for example with one frequency of 13.56 MHz. To adapt the plasma load to the generator vaccine automatic adaptation networks are usually used here. Lots Today plasma applications run in cycle time mode with short treatment times in the range of seconds. For this are the well-known automatic adjustment networks not suitable.

Stand der TechnikState of the art

Die Hochfrequenz-Anpassungsnetzwerte sind meist mit einer automatischen Ab­ stimmeinrichtung ausgerüstet, die aus elektrischen Meßwerten Steilsignale für die Einstellung der Anpassungsschaltung erzeugt. Diese automatische Abstimmung benötigt meist eine Einstellzeit im Sekundenbereich. Dadurch reicht die Einstellge­ schwindigkeit für kurze Behandlungszeiten nicht aus.The high-frequency adjustment network values are usually with an automatic Ab Equipped tuning device, the steep signals for electrical measurements Adjustment circuit setting generated. This automatic voting usually requires a response time in the range of seconds. This makes the setting range sufficient speed for short treatment times.

Alternativ werden Anordnungen verwendet, die nicht verstellt werden. Diese sind über die kurzen Prozeßzeiten zwar stabil, können aber die Drift von Prozeßschritt zu Prozeßschritt ebensowenig kompensieren wie Änderungen der Prozeßparame­ ter. Gefordert ist demnach eine automatische Anpassungseinrichtung, die sowohl während einer kurzen Prozeßzeit stabil und reproduzierbar läuft als auch in der La­ ge ist, Änderungen der Prozeßparameter und Drifterscheinungen von Zyklus zu Zyklus automatisch zu kompensieren.Alternatively, arrangements are used that are not adjusted. These are Stable over the short process times, but can drift by process step  to compensate for process step just as little as changes in process parameters ter. Accordingly, an automatic adjustment device is required, which both runs stable and reproducible during a short process time as well as in the La ge, changes in process parameters and drift phenomena from cycle to Compensate cycle automatically.

Beschreibung der AnordnungDescription of the arrangement

Erfindungsgemäß wird dies realisiert, indem ein vorzugsweise digital ausgeführter Controller verwendet wird, der während der HF-Einschaltzeit die HF-Signale auf­ nimmt und die notwendigen Korrekturen zur optimalen Abstimmung des Anpas­ sungsnetzwerkes bestimmt, diese jedoch nicht ausführt, sondern vielmehr die Kor­ rekturen speichert und das Anpassungsnetzwerk über die Einschaltzeit unverändert läßt. Während der Ausschaltzeit zwischen zwei Prozessen wird nun die erforderli­ che Verstellung zur Korrektur des Anpassungsnetzwerkes durchgeführt. Damit wird die Kompensation von Drifterscheinungen sichergestellt.According to the invention, this is realized by a preferably digitally executed Controller is used, the RF signals on during the RF switch-on time takes and the necessary corrections for optimal adjustment of the adaptation network, but does not implement it, but rather the cor save changes and the adaptation network unchanged over the switch-on time leaves. During the switch-off time between two processes, the required che adjustment carried out to correct the adjustment network. So that will the compensation of drift phenomena ensured.

Zum Einfahren von Prozessen ist vorgesehen, daß in diesem Fall das Autotuning im klassischen kontinuierlichen Betrieb verwendet wird, bis eine Anfangsanpassung gefunden ist, deren Werte gespeichert und als Startwerte für den jeweils ersten Prozeß einer Serie verwendet werden.For running in processes it is provided that in this case the autotuning in classic continuous operation is used until an initial adjustment is found, whose values are saved and as start values for the first Process of a series can be used.

Claims (2)

1. Verfahren und Anordnung zum automatischen Abstimmen eines elektrischen Hochfrequenz-Anpassungsnetzwerkes im Taktbetrieb, dadurch gekennzeich­ net, daß während der zyklisch wiederkehrenden Einschaltzeit der Hochfrequenz die Messung der zum Abstimmen erforderlichen elektrischen Größen erfolgt, aber während dieser Einschaltzeit keine Bauteile zur Abstimmung verstellt wer­ den, hingegen während der Ausschaltzeit, zum Beispiel während des Umladens der Werkstücke, die Verstellung der elektrischen Bauteile zur Abstimmung nach dem Wiedereinschalten anhand der in den vorhergehenden Zyklen gewonnenen Meßwerte erfolgt.1. Method and arrangement for automatic tuning of an electrical high-frequency adaptation network in cyclical operation, characterized in that during the cyclically recurring switch-on time of the high frequency, the measurement of the electrical variables required for tuning takes place, but no components are adjusted for tuning during this switch-on time. on the other hand, during the switch-off time, for example during the reloading of the workpieces, the adjustment of the electrical components for tuning after switching on again takes place on the basis of the measurement values obtained in the previous cycles. 2. Verfahren und Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß die Hochfrequenz zur Anregung von Niederdruck-Gasentladungen für die Oberflä­ chenbehandung von Werkstücken verwendet wird.2. The method and arrangement according to claim 1, characterized in that the High frequency for the excitation of low pressure gas discharges for the surface treatment of workpieces.
DE1999141542 1999-09-01 1999-09-01 Automatic tuning method and device for HF impedance matching network for plasma process uses cyclic measurement of electrical parameters and adjustment of tuning components in alternation Withdrawn DE19941542A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1999141542 DE19941542A1 (en) 1999-09-01 1999-09-01 Automatic tuning method and device for HF impedance matching network for plasma process uses cyclic measurement of electrical parameters and adjustment of tuning components in alternation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1999141542 DE19941542A1 (en) 1999-09-01 1999-09-01 Automatic tuning method and device for HF impedance matching network for plasma process uses cyclic measurement of electrical parameters and adjustment of tuning components in alternation

Publications (1)

Publication Number Publication Date
DE19941542A1 true DE19941542A1 (en) 2001-03-08

Family

ID=7920355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1999141542 Withdrawn DE19941542A1 (en) 1999-09-01 1999-09-01 Automatic tuning method and device for HF impedance matching network for plasma process uses cyclic measurement of electrical parameters and adjustment of tuning components in alternation

Country Status (1)

Country Link
DE (1) DE19941542A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260614A1 (en) * 2002-12-23 2004-07-08 Advanced Micro Devices, Inc., Sunnyvale Plasma parameter control using learning data

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
US5618382A (en) * 1989-10-03 1997-04-08 Applied Materials, Inc. High-frequency semiconductor wafer processing apparatus and method
EP0935406A2 (en) * 1998-02-09 1999-08-11 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5618382A (en) * 1989-10-03 1997-04-08 Applied Materials, Inc. High-frequency semiconductor wafer processing apparatus and method
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
EP0935406A2 (en) * 1998-02-09 1999-08-11 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260614A1 (en) * 2002-12-23 2004-07-08 Advanced Micro Devices, Inc., Sunnyvale Plasma parameter control using learning data
DE10260614B4 (en) * 2002-12-23 2008-01-31 Advanced Micro Devices, Inc., Sunnyvale Plasma parameter control using learning data

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8141 Disposal/no request for examination