DE19900437B4 - Method and device for ion implantation in solids and / or for coating solid surfaces and the use of methods and apparatus - Google Patents

Abstract

method for ion implantation in solids and / or for coating solid surfaces, characterized that the solid substrate with at least one coaxial beam consisting of at least one Ion beam and at least one laser beam is applied.

Description

The The invention relates to a method and a device for treatment of solid substrates, in which the substrate for the purpose of coating and / or the Ion implantation in the surface and / or deeper layers with at least one coaxial beam from at least one ion beam and at least one laser beam acted upon becomes. Furthermore, the invention relates to the application of the method in the field of tumor treatment and in the field of production of Nanoparticles, diamond disks and scanning tunneling microscope probe tips.

It is known that metal carriers provided with radioactive phosphorus are implanted in curative cardiac therapy. The ion current required for the coating of these metal carriers causes sputtering processes to cause radioactive contamination of the coating systems, which must be disposed of in a complicated manner. Radioactive implants and processes for their preparation are known for example from the patent EP 0 500 928 B1 known.

Farther It is known, walls and ceramic parts of internal combustion engines to subject to increase the efficiency of a Flammbeaufschlagung. The treated areas suffice however, the requirements with regard to temperature and corrosion behavior Not.

Also It is known that electroplated conductor patterns on printed circuit boards in space technology high levels of interference and cause failure rates. Implanted conductor tracks on solid substrates offer here by orders of magnitude higher security.

The prior art is to modify a substrate surface to be coated before or during the evaporation process by means of ion beam, plasma, electron beam or laser method and / or to stimulate, as for example in the published patent applications DE 44 27 215 A1 . DD 231 522 A1 and GB 2 112 205 A is described.

The application of material layers on solid surfaces by means of ion beam is known, for example, from the Japanese patents JP 61-084379 A . JP 07-090581 A . JP 01-127667 A and JP 05-263240 A known.

Methods and apparatus for providing ion beams are disclosed in patents DE 38 29 338 C2 and US Pat. No. 3,778,656 as well as in the publications DE 44 19 970 A1 and DE 36 21 045 A1 described. Electron cyclotron resonance ion sources (ECR ion sources) are known from the patents DE 195 13 345 C2 and DE 196 41 439 C2 known.

As a general rule However, liability problems dominate all areas of coating technology and the object is to improve this coating and ion implantation methods and related devices.

The The object is achieved by the method for the treatment of solid substrates according to claim 1 and by the device for carrying out this Method according to claim 12 solved. Uses of the method according to the invention be in the claims 8, 9 and 10 indicated.

The invention will be described below with reference to the 1 to 9 explained. These show:

1 : Schematic representation of the method and

2 to 9 : Device according to the invention in various configurations.

In the coating and / or ion implantation process according to the invention, an electron cyclotron resonance ion source (ECR ion source) ( 1 ) according to the German patents DE 195 13 345 C2 and DE 196 41 439 C2 an ion beam ( 3b ), consisting of one or more of the elements of the periodic table ( 2 ). The ion beam ( 3b ) is adapted for implantation in a process chamber ( 9 ) positioned coating / implantation object ( 7 ) accelerates. There are no restrictions in the composition of the ion beam. It can include all elements of the periodic table.

Coaxial with the ion beam generated in the ECR ion source ( 3b ), a laser beam passes through process-conforming energy and wavelength ( 3a ) a vacuum-tight laser optics ( 6 ) and together with the ion beam ( 3b ) a coaxial beam ( 3 ). The coaxial beam ( 3 ) can consist of several laser beams ( 3a ) of different wavelengths are formed ( 3 ).

Ion beam ( 3b ) and laser beam ( 3a ) are adjustable so that they act simultaneously on the substrate surface and that the coaxial beam ( 3 ) can be operated continuously or pulsed or alternately continuously and pulsed. Ion beam and laser beam energy and pulse duration are adjustable. They determine the depot depth and depot volume during implantation and their spatial distribution.

An ECR ion source downstream deflection and deflection system ( 4 . 5 ) as well as an ion optics ( 8th ) determine the ion beam dimension and direction ( 3 ). The adjustment of the interatomic binding energy in the substrate ( 7 ) by means of laser energy supply ( 2 ). By combining both beams into a coaxial beam ( 3 ) spatial implantation patterns can be generated. Methods of laser shock hardening are not comparable.

To carry out the coating and / or ion implantation process, it is advantageous to use the patents DE 195 13 345 C2 and DE 196 41 439 C2 to use the ICR ion sources described and assign them a power laser to produce a coaxial beam ( 2 ). The coaxial beam ( 3 ) may be assigned an Justierlaserstrahl. The beam of the power laser ( 3a ), possibly together with the beam of the Justierlasers, via a vacuum-tight laser optics ( 6 ) centrally into the ECR ion source ( 1 ) merges with the one in the source ( 1 ) generated ion beam ( 3b ) to the coaxial beam ( 3 ) and hits the substrate surface ( 7 ) ( 1 and 2 ).

The ion acceleration energy is preferably up to 400 keV. Ion acceleration elements ( 23 . 24 ) as well as ion beam control elements ( 5 . 8th ) control the ion beam with respect to the ion energy, the ion beam dimension and the ion selection ( 2 and 3 ).

The ion beam ( 3b ) superimposed laser beam ( 3a ) has the task of adjusting or modifying the interatomic binding forces by means of energy supply and is co-determining the coating and implantation structure on the substrate ( 7 ).

The process chamber ( 9 ) with at least one laser / ECR ion source combination ( 1 . 2 ) arranged centrally opposite and / or laterally at an angle to the surface normal of the substrate and by means of insulators ( 10 . 10a ) is electrically isolated from the chamber wall. The pressure within the process chamber can be controlled by means of a vacuum pump system ( 16 ) are lowered to the high vacuum range ( 2 ). For process adjustment or regulation, at least one additional power laser ( 2 ) be arranged centrally or laterally ( 2 ). For process control or support, at least one gas supply ( 15 ) at the process chamber ( 9 ) to be appropriate. Process-induced laser power increase and / or wavelength adjustment and / or wavelength mixing inside and outside the ECR ion source are achieved by coupling by means of a laser optical system ( 29 ) realized ( 3 ). The arrangement of the power laser / ECR ion source combination ( 1 . 2 ) including the ion beam controls ( 5 . 8th ) is freely selectable; the angular settings shown in the figures are merely exemplary embodiments of the invention. According to a further embodiment according to 4 Also, a tandem arrangement may be required. This embodiment is needed in particular for the production of nanoparticles or diamond disks ( 9 ). Furthermore, the device contains a movement device ( 19 ) for the solid substrate by means of which a spatial coating / implantation pattern can be produced. An additional degree of freedom in the pattern generation is also given by the integrated joint in the insulator.

An embodiment of the invention which allows coatings or ion implantations under quite different conditions is disclosed in U.S. Pat 5 shown. The gas and pressure conditions for the process are within the process chamber ( 9 ) by means of the vacuum chamber ( 31 ), the vacuum pump system ( 18 ) and the ion window ( 20 ) adjustable.

The open systems according to the 6 . 7 and 8th are primarily designed for technological application in the medical sector.

It It is known that brain tumors of the type glioblastoma multiforme (GBM) are not curable. It is also known that one to two Alpha particles per human cell are sufficient to destroy tumor sequences. By Coupling of Astat-211, an alpha emitter, to an antibody a doubling of the survival time Occasionally reached in about a year. A disadvantage of However, this method is that the alpha emitter together with the antibody the entire organism has to pass. A direct implantation Radioactive substances in malignant tumors could be forward-looking here. The process chamber according to the invention is therefor designed as a high-sterile room, which is both a normal and a vacuum setting allowed.

The in the 9 shown embodiment of the invention is designed for nanoparticle production. This requires prior to the synthesis step, the comminution of the starting materials, preferably to individual atoms or ions, which are then assembled under process-conforming pressure, gas and energy conditions controlled to form larger nanoassemblies.

By means of the laser devices ( 2 . 6 . 12 . 29 ) above the ECR ion source ( 1 ) is in the evaporation device ( 26 ) laser-induced matter ( 34 ) of a variety or mixed form in the sputtering, melting or evaporation process and by means of the hollow cylinder insulator ( 25 ) - z. B. a sapphire or Rubinhohlzylinders - via a va hermetically sealed additional insulator ( 10 ) is fed to the ECR ion source. An annular laser arrangement in the matter plane ( 34 ) at the evaporation plant ( 26 ) and / or above the dividing line ( 27 ) can provide significant process benefits. To the mass transport from the evaporation plant ( 26 ) into the reaction zone ( 35 ) or the process level ( 21 . 22 . 23 ), it may be useful to look above the dividing line ( 27 ) provide a second ECR ion source. The reaction plasma may be due to the plasma extraction capacity of the ECR ion source ( 1 ) in the process levels ( 21 . 22 . 23 ). This setting is suitable for the production of diamond wheels. For process adjustment is at the evaporation plant ( 26 ) a gas inlet ( 28 ) intended.

One Another application for the use of the method according to the invention and the device according to the invention is the fabrication of scanning tunneling microscope probe tips, which in of the order of magnitude less atoms lies.

1

ECR ion source

2

Laser / Laser Power

3

Koaxialstrahl (Ion and laser beam)

3a

laser beam

3b

ion beam

4

Ion beam deflection system

5

Ion Beam Cup

6

vacuum-tight laser optics

7

substratum

8th

Ion optics system

9

process chamber

10

insulator

10a

joint insulator

11

laser

12

laser beam

13

Koaxialstrahl

13b

ion beam

15

Process gas inlet

16

vacuum pump system 1

17

template

18

vacuum pump system 2

19

substrate holder

20

ion window

21

object holder

22

object holder in position 2

23

object holder in position 3

24

plasma grid

24a

accelerating grid

25

Sapphire hollow cylinder

26

chamber for laser-induced evaporation

27

separation point

28

gas inlet

29

Laser optical system

30

bracket

31

vacuum chamber

32

laser mirror

33

Scattered ray protection

34

Matter bars

35

reaction zone

Claims (18)

Method for ion implantation in solids and / or for coating solid surfaces , characterized in that the solid substrate is subjected to at least one coaxial beam consisting of at least one ion beam and at least one laser beam. Method according to claim 1, characterized in that that it is at atmospheric pressure or under reduced pressure. Method according to claim 1 or 2, characterized that the coaxial beam is perpendicular to the surface normal or at any angle to the surface normal is directed to the substrate. Method according to one or more of the preceding Claims, characterized in that the coaxial jet is continuous or pulsed or alternately operated continuously and pulsed. Method according to one or more of the preceding Claims, characterized in that the ion beam energy, the laser beam energy and / or the pulse duration of both beams can be adjusted depending on the process. Method according to one or more of the preceding Claims, characterized in that as a human or animal tissue is used. Method according to Claim 6, characterized that an ion beam of radioactive material is used. Apparatus for carrying out the method according to one or more of claims 1 to 7, having a process chamber, a substrate holder movable in three spatial directions, at least one electron cyclotron resonance ion source, and at least one laser, characterized in that the at least one Laser is arranged or associated with such a deflection optics that the ion beam and the laser beam before impinging on the Substrato surface are combined into a single coaxial beam. Device according to claim 8, characterized in that that the at least one ECR ion beam / laser combination is central across from the substrate surface or at an angle to it on the process chamber wall and separated therefrom by means of an insulator. Device according to one or more of claims 8 or 9, characterized in that it contains a vacuum chamber with vacuum pump system. Device according to one or more of claims 8 to 10, characterized in that it contains at least one gas supply. Device according to one or more of claims 8 to 11, characterized in that they two with respect to the substrate surface in a row arranged ECR ion beam / laser combinations in tandem arrangement having. Device according to one or more of claims 8 to 12, characterized in that it contains a Justierlaser. Device according to one or more of claims 8 to 13, characterized in that the ECR ion source ion acceleration elements and ion beam control elements. Use of the method according to one or more the claims 1 to 7 and the device according to one or more of claims 8 to 14 for the treatment of malignant tumors. Use of the method according to one or more the claims 1 to 5 and the device according to one or more of claims 8 to 14 for the production of nanoparticles. Use of the method according to one or more the claims 1 to 5 and the device according to one or more of claims 8 to 14 for the production of diamond discs. Use of the method according to one or more the claims 1 to 5 and the device according to one or more of claims 8 to 14 for the production of scanning tunneling microscope probe tips.