DE19882715T1 - Zweistufiges Dichtungssystem für wärmeleitende Aufspannung - Google Patents
Zweistufiges Dichtungssystem für wärmeleitende AufspannungInfo
- Publication number
- DE19882715T1 DE19882715T1 DE19882715T DE19882715T DE19882715T1 DE 19882715 T1 DE19882715 T1 DE 19882715T1 DE 19882715 T DE19882715 T DE 19882715T DE 19882715 T DE19882715 T DE 19882715T DE 19882715 T1 DE19882715 T1 DE 19882715T1
- Authority
- DE
- Germany
- Prior art keywords
- heat
- sealing system
- stage sealing
- conductive clamping
- clamping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H10P72/0441—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
-
- H10P72/72—
-
- H10P72/7606—
-
- H10P72/7624—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/938,293 US6138745A (en) | 1997-09-26 | 1997-09-26 | Two-stage sealing system for thermally conductive chuck |
| PCT/US1998/020056 WO1999016926A1 (en) | 1997-09-26 | 1998-09-24 | Two-stage sealing system for thermally conductive chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19882715T1 true DE19882715T1 (de) | 2000-08-24 |
Family
ID=25471231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19882715T Withdrawn DE19882715T1 (de) | 1997-09-26 | 1998-09-24 | Zweistufiges Dichtungssystem für wärmeleitende Aufspannung |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6138745A (de) |
| DE (1) | DE19882715T1 (de) |
| GB (1) | GB2344356B (de) |
| WO (1) | WO1999016926A1 (de) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3347742B2 (ja) * | 1997-01-02 | 2002-11-20 | シーヴイシー・プロダクツ・インコーポレーテッド | 真空処理装置のための熱伝導性チャック、熱伝達装置及びチャック本体と基材との間で熱を伝達させる方法 |
| US6138745A (en) * | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
| US6073576A (en) * | 1997-11-25 | 2000-06-13 | Cvc Products, Inc. | Substrate edge seal and clamp for low-pressure processing equipment |
| US6464795B1 (en) * | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
| US6920915B1 (en) * | 1999-10-02 | 2005-07-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus and method for cooling a semiconductor substrate |
| KR20020014098A (ko) * | 2000-08-16 | 2002-02-25 | 박종섭 | 포토레지스트의 하드 베이크 장치 |
| US20040079289A1 (en) * | 2002-10-23 | 2004-04-29 | Kellerman Peter L. | Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging |
| US7033443B2 (en) * | 2003-03-28 | 2006-04-25 | Axcelis Technologies, Inc. | Gas-cooled clamp for RTP |
| US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
| US7993460B2 (en) * | 2003-06-30 | 2011-08-09 | Lam Research Corporation | Substrate support having dynamic temperature control |
| US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
| US6947274B2 (en) * | 2003-09-08 | 2005-09-20 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage |
| US7072166B2 (en) | 2003-09-12 | 2006-07-04 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage |
| US6905984B2 (en) * | 2003-10-10 | 2005-06-14 | Axcelis Technologies, Inc. | MEMS based contact conductivity electrostatic chuck |
| US6946403B2 (en) * | 2003-10-28 | 2005-09-20 | Axcelis Technologies, Inc. | Method of making a MEMS electrostatic chuck |
| KR100697273B1 (ko) * | 2004-09-21 | 2007-03-21 | 삼성전자주식회사 | 설비 유지 보수에 소요되는 로스 타임을 줄일 수 있는반도체 설비의 유닛 |
| US20070283709A1 (en) * | 2006-06-09 | 2007-12-13 | Veeco Instruments Inc. | Apparatus and methods for managing the temperature of a substrate in a high vacuum processing system |
| US7667944B2 (en) * | 2007-06-29 | 2010-02-23 | Praxair Technology, Inc. | Polyceramic e-chuck |
| WO2011082020A2 (en) * | 2009-12-31 | 2011-07-07 | Applied Materials, Inc. | Shadow ring for modifying wafer edge and bevel deposition |
| US9117867B2 (en) * | 2011-07-01 | 2015-08-25 | Applied Materials, Inc. | Electrostatic chuck assembly |
| US20150034476A1 (en) | 2013-07-08 | 2015-02-05 | Veeco Instruments, Inc. | Deposition of thick magnetizable films for magnetic devices |
| DE102014014070A1 (de) * | 2014-09-29 | 2016-03-31 | Forschungszentrum Jülich GmbH | Vorrichtung zum geregelten Wärmeübergang auf und von einem Bauteil |
| US9613839B2 (en) * | 2014-11-19 | 2017-04-04 | Varian Semiconductor Equipment Associates, Inc. | Control of workpiece temperature via backside gas flow |
| JP6839624B2 (ja) * | 2017-07-19 | 2021-03-10 | 東京エレクトロン株式会社 | 被処理体の処理装置、及び、処理装置の検査方法 |
| KR102679590B1 (ko) * | 2018-03-23 | 2024-06-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 격리형 후면 헬륨 전달 시스템 |
| US12051607B2 (en) * | 2018-07-24 | 2024-07-30 | Asml Netherlands B.V. | Substrate positioning device with remote temperature sensor |
| WO2020073779A1 (zh) * | 2018-10-11 | 2020-04-16 | 北京北方华创微电子装备有限公司 | 静电卡盘及反应腔室 |
| US12334315B2 (en) * | 2020-04-30 | 2025-06-17 | Applied Materials, Inc. | Cooled substrate support assembly for radio frequency environments |
| WO2021252276A1 (en) * | 2020-06-09 | 2021-12-16 | Lam Research Corporation | Pedestal thermal profile tuning using multiple heated zones and thermal voids |
| TW202232656A (zh) | 2021-01-11 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 靜電卡盤、及形成靜電卡盤之方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2706395C3 (de) | 1977-02-15 | 1979-09-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Unterbrechungsfreie Stromversorgungsanlage mit einem Wechselrichter |
| US4194233A (en) * | 1978-01-30 | 1980-03-18 | Rockwell International Corporation | Mask apparatus for fine-line lithography |
| US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
| US4909314A (en) * | 1979-12-21 | 1990-03-20 | Varian Associates, Inc. | Apparatus for thermal treatment of a wafer in an evacuated environment |
| US4743570A (en) * | 1979-12-21 | 1988-05-10 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
| US4603466A (en) * | 1984-02-17 | 1986-08-05 | Gca Corporation | Wafer chuck |
| US4615755A (en) * | 1985-08-07 | 1986-10-07 | The Perkin-Elmer Corporation | Wafer cooling and temperature control for a plasma etching system |
| US5103367A (en) * | 1987-05-06 | 1992-04-07 | Unisearch Limited | Electrostatic chuck using A.C. field excitation |
| JP2680338B2 (ja) | 1988-03-31 | 1997-11-19 | 株式会社東芝 | 静電チャック装置 |
| US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
| EP0423327B1 (de) * | 1989-05-08 | 1994-03-30 | Koninklijke Philips Electronics N.V. | Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck |
| US5180000A (en) * | 1989-05-08 | 1993-01-19 | Balzers Aktiengesellschaft | Workpiece carrier with suction slot for a disk-shaped workpiece |
| US5213650A (en) | 1989-08-25 | 1993-05-25 | Applied Materials, Inc. | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
| US5244820A (en) | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
| US4971653A (en) * | 1990-03-14 | 1990-11-20 | Matrix Integrated Systems | Temperature controlled chuck for elevated temperature etch processing |
| US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
| US5452177A (en) | 1990-06-08 | 1995-09-19 | Varian Associates, Inc. | Electrostatic wafer clamp |
| US5096536A (en) * | 1990-06-12 | 1992-03-17 | Micron Technology, Inc. | Method and apparatus useful in the plasma etching of semiconductor materials |
| KR0165898B1 (ko) * | 1990-07-02 | 1999-02-01 | 미다 가쓰시게 | 진공처리방법 및 장치 |
| US5192849A (en) * | 1990-08-10 | 1993-03-09 | Texas Instruments Incorporated | Multipurpose low-thermal-mass chuck for semiconductor processing equipment |
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US5267607A (en) * | 1991-05-28 | 1993-12-07 | Tokyo Electron Limited | Substrate processing apparatus |
| US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
| US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
| US5382311A (en) * | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| US5300175A (en) * | 1993-01-04 | 1994-04-05 | Motorola, Inc. | Method for mounting a wafer to a submount |
| KR960006958B1 (ko) | 1993-02-06 | 1996-05-25 | 현대전자산업주식회사 | 이시알 장비 |
| KR960006956B1 (ko) | 1993-02-06 | 1996-05-25 | 현대전자산업주식회사 | 이시알(ecr) 장비 |
| US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
| JP3265743B2 (ja) | 1993-09-16 | 2002-03-18 | 株式会社日立製作所 | 基板保持方法及び基板保持装置 |
| JPH07249586A (ja) | 1993-12-22 | 1995-09-26 | Tokyo Electron Ltd | 処理装置及びその製造方法並びに被処理体の処理方法 |
| US5636098A (en) | 1994-01-06 | 1997-06-03 | Applied Materials, Inc. | Barrier seal for electrostatic chuck |
| US5421401A (en) * | 1994-01-25 | 1995-06-06 | Applied Materials, Inc. | Compound clamp ring for semiconductor wafers |
| US5474614A (en) | 1994-06-10 | 1995-12-12 | Texas Instruments Incorporated | Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp |
| US5738751A (en) * | 1994-09-01 | 1998-04-14 | Applied Materials, Inc. | Substrate support having improved heat transfer |
| JPH08130207A (ja) * | 1994-10-31 | 1996-05-21 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| US5660699A (en) * | 1995-02-20 | 1997-08-26 | Kao Corporation | Electroplating apparatus |
| US5775416A (en) * | 1995-11-17 | 1998-07-07 | Cvc Products, Inc. | Temperature controlled chuck for vacuum processing |
| US5739067A (en) | 1995-12-07 | 1998-04-14 | Advanced Micro Devices, Inc. | Method for forming active devices on and in exposed surfaces of both sides of a silicon wafer |
| US5805408A (en) * | 1995-12-22 | 1998-09-08 | Lam Research Corporation | Electrostatic clamp with lip seal for clamping substrates |
| JP3601153B2 (ja) * | 1995-12-27 | 2004-12-15 | 東京エレクトロン株式会社 | 処理ガス供給装置のクリーニング方法 |
| US5720818A (en) | 1996-04-26 | 1998-02-24 | Applied Materials, Inc. | Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck |
| US5861061A (en) * | 1996-06-21 | 1999-01-19 | Micron Technology, Inc. | Spin coating bowl |
| US5740009A (en) | 1996-11-29 | 1998-04-14 | Applied Materials, Inc. | Apparatus for improving wafer and chuck edge protection |
| US5748435A (en) | 1996-12-30 | 1998-05-05 | Applied Materials, Inc. | Apparatus for controlling backside gas pressure beneath a semiconductor wafer |
| US5936829A (en) * | 1997-01-02 | 1999-08-10 | Cvc Products, Inc. | Thermally conductive chuck for vacuum processor |
| JP3347742B2 (ja) * | 1997-01-02 | 2002-11-20 | シーヴイシー・プロダクツ・インコーポレーテッド | 真空処理装置のための熱伝導性チャック、熱伝達装置及びチャック本体と基材との間で熱を伝達させる方法 |
| US6138745A (en) * | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
| US6073576A (en) * | 1997-11-25 | 2000-06-13 | Cvc Products, Inc. | Substrate edge seal and clamp for low-pressure processing equipment |
-
1997
- 1997-09-26 US US08/938,293 patent/US6138745A/en not_active Expired - Fee Related
-
1998
- 1998-09-24 WO PCT/US1998/020056 patent/WO1999016926A1/en not_active Ceased
- 1998-09-24 GB GB0004325A patent/GB2344356B/en not_active Expired - Fee Related
- 1998-09-24 DE DE19882715T patent/DE19882715T1/de not_active Withdrawn
-
2000
- 2000-09-21 US US09/666,172 patent/US6378600B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6378600B1 (en) | 2002-04-30 |
| GB2344356A (en) | 2000-06-07 |
| GB0004325D0 (en) | 2000-04-12 |
| WO1999016926A1 (en) | 1999-04-08 |
| US6138745A (en) | 2000-10-31 |
| GB2344356B (en) | 2002-10-23 |
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