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DE19881467T1 - Einkristall-Ziehvorrichtung und Einkristall-Ziehverfahren - Google Patents

Einkristall-Ziehvorrichtung und Einkristall-Ziehverfahren

Info

Publication number
DE19881467T1
DE19881467T1 DE19881467T DE19881467T DE19881467T1 DE 19881467 T1 DE19881467 T1 DE 19881467T1 DE 19881467 T DE19881467 T DE 19881467T DE 19881467 T DE19881467 T DE 19881467T DE 19881467 T1 DE19881467 T1 DE 19881467T1
Authority
DE
Germany
Prior art keywords
single crystal
crystal pulling
pulling device
pulling method
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19881467T
Other languages
English (en)
Inventor
Yutaka Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Publication of DE19881467T1 publication Critical patent/DE19881467T1/de
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911Seed or rod holders
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1072Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19881467T 1997-09-05 1998-08-26 Einkristall-Ziehvorrichtung und Einkristall-Ziehverfahren Ceased DE19881467T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25615397A JP3400312B2 (ja) 1997-09-05 1997-09-05 単結晶引上げ装置及び単結晶引上げ方法
PCT/JP1998/003787 WO1999013138A1 (en) 1997-09-05 1998-08-26 Single crystal pull-up apparatus and single crystal pull-up method

Publications (1)

Publication Number Publication Date
DE19881467T1 true DE19881467T1 (de) 1999-12-02

Family

ID=17288652

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19881467T Ceased DE19881467T1 (de) 1997-09-05 1998-08-26 Einkristall-Ziehvorrichtung und Einkristall-Ziehverfahren

Country Status (6)

Country Link
US (1) US6217648B1 (de)
JP (1) JP3400312B2 (de)
KR (1) KR20000068909A (de)
DE (1) DE19881467T1 (de)
TW (1) TW515855B (de)
WO (1) WO1999013138A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040044146A (ko) * 2002-11-19 2004-05-27 가부시끼가이샤 도꾸야마 플루오르화 금속용 단결정 인출 장치
JP4791073B2 (ja) * 2005-04-26 2011-10-12 Sumco Techxiv株式会社 シリコンウェーハの製造方法
KR101674287B1 (ko) * 2015-01-21 2016-11-08 주식회사 엘지실트론 단결정 잉곳의 직경 제어 시스템 및 제어 방법
CN110451442A (zh) * 2018-05-08 2019-11-15 上海新宇箴诚电控科技有限公司 一种实现端位保持并自由转向的提拉装置
US11255024B2 (en) 2019-06-18 2022-02-22 Linton Crystal Technologies Corp. Seed lifting and rotating system for use in crystal growth
US11891721B2 (en) 2020-12-09 2024-02-06 Linton Kayex Technology Co., Ltd Spool-balanced seed lift
CN116374600A (zh) * 2023-01-30 2023-07-04 杭叉集团股份有限公司 一种取晶棒属具

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3937623A (en) * 1973-07-25 1976-02-10 Vasily Porfirovich Kononko Method of making glass tubes
US4145201A (en) * 1978-03-06 1979-03-20 Owens-Corning Fiberglas Corporation Glass fiber producing and collecting apparatus
JPS63252991A (ja) 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するcz単結晶
JPH03295892A (ja) 1990-02-19 1991-12-26 Kawasaki Steel Corp 単結晶引上方法及びその装置
JPH03285891A (ja) 1990-03-31 1991-12-17 Ntn Corp 結晶引上げ装置
JP2796687B2 (ja) 1992-01-17 1998-09-10 コマツ電子金属株式会社 単結晶製造方法およびその装置
JP2946933B2 (ja) 1992-03-19 1999-09-13 三菱マテリアル株式会社 単結晶引上装置
JP2946934B2 (ja) 1992-03-19 1999-09-13 三菱マテリアル株式会社 単結晶引上装置
JPH07172981A (ja) 1993-12-14 1995-07-11 Komatsu Electron Metals Co Ltd 半導体単結晶の製造装置および製造方法
JP2990658B2 (ja) 1996-09-03 1999-12-13 住友金属工業株式会社 単結晶引上装置
JP2990662B2 (ja) 1996-11-11 1999-12-13 住友金属工業株式会社 単結晶引上装置

Also Published As

Publication number Publication date
TW515855B (en) 2003-01-01
WO1999013138A1 (en) 1999-03-18
KR20000068909A (ko) 2000-11-25
US6217648B1 (en) 2001-04-17
JPH1179881A (ja) 1999-03-23
JP3400312B2 (ja) 2003-04-28

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection