DE19781967T1 - Verfahren und Vorrichtung zum Ziehen eines Einkristalls - Google Patents

Verfahren und Vorrichtung zum Ziehen eines Einkristalls

Info

Publication number: DE19781967T1
Authority: DE; Germany
Prior art keywords: pulling; single crystal; crystal
Prior art date: 1996-08-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

DE19781967T

Other languages

English (en)

Other versions

DE19781967B3 (de

Inventor

Hideki Fujiwara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nippon Steel Corp

Original Assignee

Sumitomo Sitix Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-08-30

Filing date

1997-08-29

Publication date

1999-09-09

1996-08-30 Priority claimed from JP8249155A external-priority patent/JP3050135B2/ja

1996-09-17 Priority claimed from JP26675596A external-priority patent/JPH1095690A/ja

1997-08-29 Application filed by Sumitomo Sitix Corp filed Critical Sumitomo Sitix Corp

1999-09-09 Publication of DE19781967T1 publication Critical patent/DE19781967T1/de

Status Pending legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DE19781967T 1996-08-30 1997-08-29 Verfahren und Vorrichtung zum Ziehen eines Einkristalls Pending DE19781967T1 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP8249155A JP3050135B2 (ja)	1996-08-30	1996-08-30	単結晶引き上げ方法及び単結晶引き上げ装置
JP26675596A JPH1095690A (ja)	1996-09-17	1996-09-17	単結晶引き上げ装置
PCT/JP1997/003015 WO1998009007A1 (fr)	1996-08-30	1997-08-29	Procede et appareil de tirage de monocristal

Publications (1)

Publication Number	Publication Date
DE19781967T1 true DE19781967T1 (de)	1999-09-09

Family

ID=26539119

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE19781967.2A Expired - Lifetime DE19781967B3 (de)	1996-08-30	1997-08-29	Verfahren und Vorrichtung zum Ziehen eines Einkristalls
DE19781967T Pending DE19781967T1 (de)	1996-08-30	1997-08-29	Verfahren und Vorrichtung zum Ziehen eines Einkristalls

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE19781967.2A Expired - Lifetime DE19781967B3 (de)	1996-08-30	1997-08-29	Verfahren und Vorrichtung zum Ziehen eines Einkristalls

Country Status (5)

Country	Link
US (1)	US6159282A (de)
KR (1)	KR100486376B1 (de)
DE (2)	DE19781967B3 (de)
TW (1)	TW541365B (de)
WO (1)	WO1998009007A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
RU2176689C2 (ru) *	1998-06-16	2001-12-10	Институт автоматики и электрометрии СО РАН	Способ измерения диаметра кристалла в ростовой установке
TW498402B (en) *	2000-04-26	2002-08-11	Mitsubishi Material Silicon	Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defect of a single crystal
US7282094B2 (en) *	2003-05-28	2007-10-16	Sumco Corporation	Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
DE102006034433B4 (de) *	2006-07-26	2018-03-22	Crystal Growing Systems Gmbh	Kristallziehanlage, Unterstützungsvorrichtung und Verfahren zur Her-stellung von schweren Kristallen
JP5296992B2 (ja)	2007-01-31	2013-09-25	ＳｕｍｃｏＴｅｃｈｘｉｖ株式会社	シリコン結晶素材及びその製造方法
CN101660195B (zh) *	2008-08-29	2012-05-23	昆山中辰矽晶有限公司	长晶炉拉晶杆
WO2012137822A1 (ja)	2011-04-06	2012-10-11	株式会社Sumco	単結晶引上げ装置の結晶保持機構および単結晶インゴット製造方法
KR102318109B1 (ko) *	2017-08-23	2021-10-28	주식회사 히타치하이테크	화상 처리 장치, 방법, 및 하전 입자 현미경
KR102490096B1 (ko) *	2018-10-18	2023-01-17	주식회사 엘지화학	단결정 성장 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4289572A (en) *	1976-12-27	1981-09-15	Dow Corning Corporation	Method of closing silicon tubular bodies
JPS58135197A (ja) *	1982-02-02	1983-08-11	Toshiba Corp	結晶製造装置
JPS61122187A (ja) *	1984-11-20	1986-06-10	Toshiba Mach Co Ltd	単結晶引上機
JPS62288191A (ja) *	1986-06-06	1987-12-15	Kyushu Denshi Kinzoku Kk	単結晶成長方法及びその装置
JPS6321280A (ja) *	1986-07-10	1988-01-28	Osaka Titanium Seizo Kk	単結晶テール部の直径制御方法
JPS63252991A (ja) *	1987-04-09	1988-10-20	Mitsubishi Metal Corp	落下防止保持部を有するｃｚ単結晶
JPH07103000B2 (ja) *	1990-03-30	1995-11-08	信越半導体株式会社	結晶引上装置
EP0449260B1 (de) *	1990-03-30	1995-08-30	Shin-Etsu Handotai Company Limited	Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren
JPH07515B2 (ja) *	1990-04-11	1995-01-11	信越半導体株式会社	結晶引上装置
JP2816628B2 (ja) *	1992-05-08	1998-10-27	コマツ電子金属株式会社	シリコン単結晶の引き上げ方法
JP2538748B2 (ja) *	1992-11-27	1996-10-02	信越半導体株式会社	結晶径測定装置
JPH08225391A (ja) *	1995-02-23	1996-09-03	Fuji Elelctrochem Co Ltd	引き上げ法による酸化物単結晶の製造方法
JP3402012B2 (ja) *	1995-04-21	2003-04-28	信越半導体株式会社	単結晶の成長方法及び装置
US5653799A (en) *	1995-06-02	1997-08-05	Memc Electronic Materials, Inc.	Method for controlling growth of a silicon crystal
JP3402040B2 (ja) *	1995-12-27	2003-04-28	信越半導体株式会社	単結晶保持装置
JP2956568B2 (ja) *	1996-01-25	1999-10-04	住友金属工業株式会社	単結晶引上げ装置
JP2973916B2 (ja) *	1996-03-15	1999-11-08	住友金属工業株式会社	種結晶保持具及び該種結晶保持具を用いた単結晶の引き上げ方法
US5935321A (en) *	1997-08-01	1999-08-10	Motorola, Inc.	Single crystal ingot and method for growing the same

1997
- 1997-08-28 TW TW086112377A patent/TW541365B/zh not_active IP Right Cessation
- 1997-08-29 US US09/242,829 patent/US6159282A/en not_active Expired - Lifetime
- 1997-08-29 DE DE19781967.2A patent/DE19781967B3/de not_active Expired - Lifetime
- 1997-08-29 KR KR10-1999-7001476A patent/KR100486376B1/ko not_active Expired - Fee Related
- 1997-08-29 DE DE19781967T patent/DE19781967T1/de active Pending
- 1997-08-29 WO PCT/JP1997/003015 patent/WO1998009007A1/ja not_active Ceased

Also Published As

Publication number	Publication date
TW541365B (en)	2003-07-11
KR100486376B1 (ko)	2005-04-29
US6159282A (en)	2000-12-12
KR20000035820A (ko)	2000-06-26
DE19781967B3 (de)	2016-05-12
WO1998009007A1 (fr)	1998-03-05

Publication	Publication Date	Title
DE59800828D1 (de)	2001-07-19	Vorrichtung und Verfahren zum Ziehen eines Einkristalls
DE69630928D1 (de)	2004-01-15	Vorrichtung und Verfahren zum Anzeigen einer Übersetzung
DE69936472D1 (de)	2007-08-16	Verfahren und Vorrichtung zum Steuern einer Anzeigevorrichtung
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DE59601324D1 (de)	1999-04-01	Verfahren und Vorrichtung zum Depalettieren
DE69724886D1 (de)	2003-10-23	Verfahren und Vorrichtung zum Kristallziehen
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DE69501037D1 (de)	1997-12-18	Verfahren und Vorrichtung zum Falten eines Etiketts
DE59608371D1 (de)	2002-01-17	Vorrichtung und Verfahren zum Verdampfen einer Flüssigkeit
DE19780252T1 (de)	1998-04-02	Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls
DE69923876D1 (de)	2005-04-07	Verfahren und Vorrichtung zum Anbringen eines selbsthebenden Bandes
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DE69619005D1 (de)	2002-03-21	Verfahren und Vorrichtung zur Züchtung eines Einkristalles
DE69515535D1 (de)	2000-04-20	Verfahren und Vorrichtung zum Bildvergleich
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DE69624822D1 (de)	2002-12-19	Vorrichtung und verfahren zum drucken
DE69530339D1 (de)	2003-05-22	Vorrichtung und Verfahren zum Drucken