DE19615112A1 - Power semiconductor component with two-lid housing - Google Patents

Abstract

The housing (2) has two lids (6,7) and contains at least one disc-shaped, power semiconductor (3) and at least two contact pads (4, 5), coacting electrically with the lids. The semiconductor is set under pressure by the contact pads from both surfaces. The electric circuit assembly of the power semiconductor, e.g. IGBT, GTO or diode, has at least one capacitor (8), in integrated in the housing, and surrounds the semiconductor and contact pads in an annular configuration. Pref. the circuit is a series-connection of an annular capacitor and resistor, forming a stack.

Description

Technical field

The invention relates to the field of power electronics. It goes out of a power semiconductor device according to the preamble of the first Claim.

State of the art

Such a power semiconductor component is already in the European Pa tent application EP-A2-0 588 026. It is such a thing called pressure contact housing.

Such essentially comprises a first and second cover element, wel ches mechanically and electrically with a first or second contact stamp cooperates. There is a disc-shaped lei between the contact stamps device semiconductors arranged. The power semiconductor can e.g. B. the structure egg nes thyristor, a GTO, an IGTB or a diode. Such a thing  Power semiconductor device is part of a power electronic scarf tion arrangement and is to build up preferably in a tension bandage in tegrated. A so-called circuit is used to operate the component (English: "Snubber") necessary. This includes at least one capacitor and in most cases a resistor that is electrically in series and for Power semiconductors are arranged in parallel. In addition, the wiring contain a diode parallel to the resistor. The user the task now is to connect this circuit with the lowest possible inductance Power semiconductor device to connect. A simple connection via Cable is usually not feasible due to the excessive inductance, so that complex and expensive contacting options must be sought.

Presentation of the invention

The object of the present invention is a power semiconductor component specify the cost of wiring (contacting, supply Management, assembly, test) for the user is eliminated. At the same time, the Expenses for contacting, supply management and testing on the part of construction element manufacturer and the user are reduced, so that a total of Ko most advantages can be achieved.

This task is at the beginning of a power semiconductor device mentioned type solved by the features of the first claim.

The essence of the invention is therefore that the circuitry is integrated in the housing and for this purpose is built in a ring and the power semiconductor con centrically surrounds. As a result, the wiring elements also have capacitors sator, resistor and / or diode on an annular structure.  

The ring-shaped elements (resistor, diode and / or capacitor) are in front preferably equipped with electrically conductive surfaces and are on one another other stacked integrated in the housing. This allows the circuit to be connected directly be contacted via the cover elements and there is an extremely never the inductive construction.

Further exemplary embodiments result from the corresponding dependent Claims.

The advantage of the construction according to the invention is in particular that

• - The user a component according to the invention as it is from the manufacturer is delivered, can be built directly into a circuit without it Construction, contacting, splinting, assembly, procurement or test the circuit must take care of;
• - Overall, the manufacturer and user incur lower costs;
• - A space-saving construction of a converter is possible because the Ver warning for the wiring is completely eliminated;
• a smaller version of the wiring capacitor becomes possible, whereby the losses of the converter can be reduced;
• - The circuit when the components are arranged in a protective gas is also in the protective gas, which simplifies the construction and the space need reduced;
• - The integration of the circuitry in the housing is extremely low inductance ve enables contacting;
• - a higher overall through the integration of the circuitry in the housing Reliability of the component is achieved.

A power semiconductor component according to the invention is also very useful constructed and conventional housing types, such as z. B. in the one  font mentioned above can be used without any problems be det.

Brief description of the drawings

The invention is described below using exemplary embodiments menhang explained in more detail with the drawings.

Show it:

Fig. 1 shows a first embodiment of a power semiconductor device according to the invention in section;

Fig. 2 is a detail of a second embodiment of an OF INVENTION to the invention power semiconductor device in cross section;

Fig. 3 shows a section of a third embodiment of an inventive power semiconductor device in section.

The reference numerals used in the drawings and their meaning are summarized in the list of reference symbols. Basically are in the same parts with the same reference numerals.

Ways of Carrying Out the Invention

Fig. 1 shows a first embodiment of a Lei semiconductor device 1 according to the invention in section. 3 with a power semiconductor is characterized, which is arranged between a first contact stamp 4 and a second contact stamp 5 Kon. The power semiconductor 3 can be, for example, a thyristor, a GTO, an IGBT, a diode or the other essentially disk-shaped power semiconductor. The housing has an annular ceramic insulator 11 and is closed off by a first cover element 6 and a second cover element 7 . In Fig. 1 the housing is shown only schematically; Details can e.g. B. the font mentioned above. In particular, the Dec kelelemente 6 and 7 can also include several rings, a control electrode can be provided, etc.

For the invention, the fact that a circuit of the Lei semiconductors 3 is integrated into the housing 2 is essential. A circuit of a power semiconductor comprises at least one capacitor which limits the voltage rise on the component and is arranged in parallel with the power semiconductor. Other wiring variants include e.g. B. a series circuit of a resistor and a capacitor, which is arranged electrically in parallel to the power semiconductor. In addition, a diode can be provided in parallel with the resistor.

In the case of FIG. 1, only one capacitor 8 is provided. In order to be able to integrate the capacitor 8 into the housing, this is constructed in a substantially annular manner according to the invention and surrounds the power semiconductor 3 and the contact stamps 4 and 5 concentrically.

FIG. 2 shows a second exemplary embodiment, in which the circuitry comprises a series connection of a resistor 9 and a capacitor 8 . The resistor 9 can be constructed, for example, from a pressable resistance material that contains graphite. The resistance value can be set to a required value by appropriate dimensioning of the ring height and thickness and by selection of the press materials. The capacitor 8 can e.g. B. consist of a plurality of parallel films, which are arranged either vertically or horizontally and brought into a ring shape who the. If the capacitor 8 and the resistor 9 are also equipped with electrically conductive, preferably flattened surfaces for better contacting, the resistor 8 and capacitor 9 can be stacked directly on top of one another and electrically contacted by the contact punches 4 and 5 and all pressurized if necessary. An interposition of electrically conduct the disks, e.g. B. from molybdenum or the like, is also conceivable. As explained in the document mentioned at the outset, molybdenum disks can also be inserted between the contact punches 4 and 5 and the power semiconductor 3 .

A third embodiment is shown in FIG. 3. The circuit to summarizes here also a series circuit of a capacitor 8 and an opposing state 9 , with the latter additionally a diode 10 is arranged in parallel. The diode 10 is again ring-shaped and is z. B. on both sides inserted contact rings 12 , z. B. made of molybdenum contacted. The elements of the circuit, capacitor 8 , resistor 9 and diode 10 , are simply stacked on each other most simply according to their circuitry arrangement and contacted from both sides.

Reference list

1 power semiconductor component
2 housings
3 power semiconductors
4 first contact stamp
5 second contact stamp
6 first cover element
7 second cover element
8 capacitor
9 resistance
10 diode
11 ceramic insulator
12 contact rings

Claims (5)

1. Power semiconductor component ( 1 ) comprising a housing ( 2 ) with a first and a second cover element ( 6 , 7 ), in which housing ( 2 ) at least one disk-shaped power semiconductor ( 3 ) and at least a first and a second contact stamp ( 4th u. 5 ), which interact with the first or second cover element ( 6 or 7 ) electrically, are arranged, the power semiconductor ( 3 ) from both surfaces from the first or second contact stamp ( 4 or 5 ) with pressure can be loaded and electrically contacted, characterized in that an electrical circuit of the power semiconductor ( 3 ), in particular at least comprising a capacitor ( 8 ), is integrated in the housing ( 2 ), the power semiconductor ( 3 ) and the contact stamps ( 4 and 5 ) concentrically surrounds and has an essentially annular structure. 2. Power semiconductor component ( 1 ) according to claim 1, characterized in that the circuit comprises a series circuit of an annular capacitor ( 8 ) and an annular resistor ( 9 ) and that the resistor ( 9 ) and the capacitor ( 8 ) are stacked on top of one another and interact electrically with the corresponding cover elements ( 6 or 7 ) and can be pressurized by them. 3. Power semiconductor component according to claim 2, characterized in that the circuitry additionally comprises an annular diode ( 10 ) which is electrically and locally parallel to the resistor ( 9 ) is arranged. 4. Power semiconductor component according to one of claims 1 to 3, characterized in that the annular capacitor ( 8 ) and / or the annular resistor ( 9 ) have electrically conductive, in particular flattened for better contact, surfaces. 5. Power semiconductor component according to one of claims 3 or 4, characterized in that the annular diode ( 10 ) is contacted on at least one side of a contact ring.