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DE19580604T1 - Widerstandsfabrikation - Google Patents

Widerstandsfabrikation

Info

Publication number
DE19580604T1
DE19580604T1 DE19580604T DE19580604T DE19580604T1 DE 19580604 T1 DE19580604 T1 DE 19580604T1 DE 19580604 T DE19580604 T DE 19580604T DE 19580604 T DE19580604 T DE 19580604T DE 19580604 T1 DE19580604 T1 DE 19580604T1
Authority
DE
Germany
Prior art keywords
resistance fabrication
fabrication
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19580604T
Other languages
English (en)
Inventor
John G Richards
Hector Flores
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ChipScale Inc
Original Assignee
ChipScale Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ChipScale Inc filed Critical ChipScale Inc
Publication of DE19580604T1 publication Critical patent/DE19580604T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/47Resistors having no potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H10W70/65
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Details Of Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
DE19580604T 1994-06-09 1995-06-01 Widerstandsfabrikation Withdrawn DE19580604T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25772694A 1994-06-09 1994-06-09
PCT/US1995/006929 WO1995034083A1 (en) 1994-06-09 1995-06-01 Resistor fabrication

Publications (1)

Publication Number Publication Date
DE19580604T1 true DE19580604T1 (de) 1997-05-07

Family

ID=22977494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19580604T Withdrawn DE19580604T1 (de) 1994-06-09 1995-06-01 Widerstandsfabrikation

Country Status (7)

Country Link
US (1) US6121119A (de)
JP (1) JPH10508430A (de)
KR (1) KR100358446B1 (de)
AU (1) AU2659995A (de)
DE (1) DE19580604T1 (de)
GB (1) GB2302452B (de)
WO (1) WO1995034083A1 (de)

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US6498074B2 (en) 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6882030B2 (en) * 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
KR100377033B1 (ko) 1996-10-29 2003-03-26 트러시 테크날러지스 엘엘시 Ic 및 그 제조방법
US5910687A (en) * 1997-01-24 1999-06-08 Chipscale, Inc. Wafer fabrication of die-bottom contacts for electronic devices
US5904496A (en) * 1997-01-24 1999-05-18 Chipscale, Inc. Wafer fabrication of inside-wrapped contacts for electronic devices
AT405591B (de) 1997-10-03 1999-09-27 Schaffler & Co Heizelement und verfahren zu dessen herstellung
DE19755753A1 (de) * 1997-12-16 1999-06-17 Bosch Gmbh Robert Widerstandsbauelement und Verfahren zu seiner Herstellung
US6680668B2 (en) * 2001-01-19 2004-01-20 Vishay Intertechnology, Inc. Fast heat rise resistor using resistive foil
US6717254B2 (en) 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
US6753199B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6787916B2 (en) 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
US6830959B2 (en) * 2002-01-22 2004-12-14 Fairchild Semiconductor Corporation Semiconductor die package with semiconductor die having side electrical connection
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US7612443B1 (en) 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
US6972243B2 (en) * 2003-09-30 2005-12-06 International Business Machines Corporation Fabrication of semiconductor dies with micro-pins and structures produced therewith
DE102005004160B4 (de) * 2005-01-28 2010-12-16 Infineon Technologies Ag CSP-Halbleiterbaustein, Halbleiterschaltungsanordnung und Verfahren zum Herstellen des CSP-Halbleiterbausteins
US20090032871A1 (en) * 2007-08-01 2009-02-05 Louis Vervoort Integrated circuit with interconnected frontside contact and backside contact
DE102010055935B4 (de) * 2010-12-23 2014-05-15 Epcos Ag Verfahren zum Verbinden mehrerer ungehäuster Substrate
DE102011109007A1 (de) * 2011-07-29 2013-01-31 Epcos Ag Verfahren zum Herstellen eines elektrischen Bauelements und elektrisches Bauelement
US9620473B1 (en) 2013-01-18 2017-04-11 University Of Notre Dame Du Lac Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment
JP6302644B2 (ja) * 2013-11-11 2018-03-28 株式会社ディスコ ウェーハの加工方法
EP3499552A1 (de) * 2017-12-14 2019-06-19 Nexperia B.V. Halbleiterbauelement und verfahren zur herstellung
US10770432B2 (en) * 2018-03-13 2020-09-08 Stmicroelectronics S.R.L. ASICS face to face self assembly
CN109659104B (zh) * 2018-12-28 2021-06-08 广东爱晟电子科技有限公司 一种高可靠双面异质复合电极热敏芯片

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Also Published As

Publication number Publication date
GB2302452B (en) 1998-11-18
GB2302452A (en) 1997-01-15
AU2659995A (en) 1996-01-04
KR100358446B1 (ko) 2003-01-29
WO1995034083A1 (en) 1995-12-14
US6121119A (en) 2000-09-19
HK1011454A1 (en) 1999-07-09
GB9623265D0 (en) 1997-01-08
JPH10508430A (ja) 1998-08-18

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee