DE19580604T1 - Widerstandsfabrikation - Google Patents
WiderstandsfabrikationInfo
- Publication number
- DE19580604T1 DE19580604T1 DE19580604T DE19580604T DE19580604T1 DE 19580604 T1 DE19580604 T1 DE 19580604T1 DE 19580604 T DE19580604 T DE 19580604T DE 19580604 T DE19580604 T DE 19580604T DE 19580604 T1 DE19580604 T1 DE 19580604T1
- Authority
- DE
- Germany
- Prior art keywords
- resistance fabrication
- fabrication
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
-
- H10W70/65—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Details Of Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25772694A | 1994-06-09 | 1994-06-09 | |
| PCT/US1995/006929 WO1995034083A1 (en) | 1994-06-09 | 1995-06-01 | Resistor fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19580604T1 true DE19580604T1 (de) | 1997-05-07 |
Family
ID=22977494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19580604T Withdrawn DE19580604T1 (de) | 1994-06-09 | 1995-06-01 | Widerstandsfabrikation |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6121119A (de) |
| JP (1) | JPH10508430A (de) |
| KR (1) | KR100358446B1 (de) |
| AU (1) | AU2659995A (de) |
| DE (1) | DE19580604T1 (de) |
| GB (1) | GB2302452B (de) |
| WO (1) | WO1995034083A1 (de) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448153B2 (en) * | 1996-10-29 | 2002-09-10 | Tru-Si Technologies, Inc. | Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners |
| US6498074B2 (en) | 1996-10-29 | 2002-12-24 | Tru-Si Technologies, Inc. | Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners |
| US6882030B2 (en) * | 1996-10-29 | 2005-04-19 | Tru-Si Technologies, Inc. | Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate |
| KR100377033B1 (ko) | 1996-10-29 | 2003-03-26 | 트러시 테크날러지스 엘엘시 | Ic 및 그 제조방법 |
| US5910687A (en) * | 1997-01-24 | 1999-06-08 | Chipscale, Inc. | Wafer fabrication of die-bottom contacts for electronic devices |
| US5904496A (en) * | 1997-01-24 | 1999-05-18 | Chipscale, Inc. | Wafer fabrication of inside-wrapped contacts for electronic devices |
| AT405591B (de) | 1997-10-03 | 1999-09-27 | Schaffler & Co | Heizelement und verfahren zu dessen herstellung |
| DE19755753A1 (de) * | 1997-12-16 | 1999-06-17 | Bosch Gmbh Robert | Widerstandsbauelement und Verfahren zu seiner Herstellung |
| US6680668B2 (en) * | 2001-01-19 | 2004-01-20 | Vishay Intertechnology, Inc. | Fast heat rise resistor using resistive foil |
| US6717254B2 (en) | 2001-02-22 | 2004-04-06 | Tru-Si Technologies, Inc. | Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture |
| US6753199B2 (en) * | 2001-06-29 | 2004-06-22 | Xanoptix, Inc. | Topside active optical device apparatus and method |
| US6787916B2 (en) | 2001-09-13 | 2004-09-07 | Tru-Si Technologies, Inc. | Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity |
| US6830959B2 (en) * | 2002-01-22 | 2004-12-14 | Fairchild Semiconductor Corporation | Semiconductor die package with semiconductor die having side electrical connection |
| KR100468850B1 (ko) * | 2002-05-08 | 2005-01-29 | 삼성전자주식회사 | 저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치 |
| US7612443B1 (en) | 2003-09-04 | 2009-11-03 | University Of Notre Dame Du Lac | Inter-chip communication |
| US6972243B2 (en) * | 2003-09-30 | 2005-12-06 | International Business Machines Corporation | Fabrication of semiconductor dies with micro-pins and structures produced therewith |
| DE102005004160B4 (de) * | 2005-01-28 | 2010-12-16 | Infineon Technologies Ag | CSP-Halbleiterbaustein, Halbleiterschaltungsanordnung und Verfahren zum Herstellen des CSP-Halbleiterbausteins |
| US20090032871A1 (en) * | 2007-08-01 | 2009-02-05 | Louis Vervoort | Integrated circuit with interconnected frontside contact and backside contact |
| DE102010055935B4 (de) * | 2010-12-23 | 2014-05-15 | Epcos Ag | Verfahren zum Verbinden mehrerer ungehäuster Substrate |
| DE102011109007A1 (de) * | 2011-07-29 | 2013-01-31 | Epcos Ag | Verfahren zum Herstellen eines elektrischen Bauelements und elektrisches Bauelement |
| US9620473B1 (en) | 2013-01-18 | 2017-04-11 | University Of Notre Dame Du Lac | Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment |
| JP6302644B2 (ja) * | 2013-11-11 | 2018-03-28 | 株式会社ディスコ | ウェーハの加工方法 |
| EP3499552A1 (de) * | 2017-12-14 | 2019-06-19 | Nexperia B.V. | Halbleiterbauelement und verfahren zur herstellung |
| US10770432B2 (en) * | 2018-03-13 | 2020-09-08 | Stmicroelectronics S.R.L. | ASICS face to face self assembly |
| CN109659104B (zh) * | 2018-12-28 | 2021-06-08 | 广东爱晟电子科技有限公司 | 一种高可靠双面异质复合电极热敏芯片 |
Family Cites Families (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE572049A (de) * | 1957-12-03 | 1900-01-01 | ||
| NL276298A (de) * | 1961-04-03 | 1900-01-01 | ||
| JPS5144391B1 (de) * | 1967-04-19 | 1976-11-27 | ||
| US3445925A (en) * | 1967-04-25 | 1969-05-27 | Motorola Inc | Method for making thin semiconductor dice |
| NL6706735A (de) * | 1967-05-13 | 1968-11-14 | ||
| US3594619A (en) * | 1967-09-30 | 1971-07-20 | Nippon Electric Co | Face-bonded semiconductor device having improved heat dissipation |
| US3462655A (en) * | 1967-12-01 | 1969-08-19 | Int Rectifier Corp | Semiconductor wafer forming a plurality of rectifiers |
| US3573516A (en) * | 1969-04-23 | 1971-04-06 | Gen Electric | Rectifier bridge for use with an alternator |
| US3748546A (en) * | 1969-05-12 | 1973-07-24 | Signetics Corp | Photosensitive device and array |
| US3666588A (en) * | 1970-01-26 | 1972-05-30 | Western Electric Co | Method of retaining and bonding articles |
| US3680205A (en) * | 1970-03-03 | 1972-08-01 | Dionics Inc | Method of producing air-isolated integrated circuits |
| US3686748A (en) * | 1970-04-13 | 1972-08-29 | William E Engeler | Method and apparatus for providng thermal contact and electrical isolation of integrated circuits |
| US3761782A (en) * | 1971-05-19 | 1973-09-25 | Signetics Corp | Semiconductor structure, assembly and method |
| US3746945A (en) * | 1971-10-27 | 1973-07-17 | Motorola Inc | Schottky diode clipper device |
| BE790652A (fr) * | 1971-10-28 | 1973-02-15 | Siemens Ag | Composant a semi-conducteurs a connexions portantes |
| US3905094A (en) * | 1972-01-10 | 1975-09-16 | Displaytek Corp | Thermal display module |
| US3886578A (en) * | 1973-02-26 | 1975-05-27 | Multi State Devices Ltd | Low ohmic resistance platinum contacts for vanadium oxide thin film devices |
| US3944447A (en) * | 1973-03-12 | 1976-03-16 | Ibm Corporation | Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation |
| US3820235A (en) * | 1973-05-21 | 1974-06-28 | Philco Ford Corp | Guard ring structure for microwave schottky diode |
| US4063176A (en) * | 1976-07-29 | 1977-12-13 | Vari-L Company, Inc. | Broadband high frequency mixer |
| JPS54120587A (en) * | 1978-03-10 | 1979-09-19 | Fujitsu Ltd | Transistor |
| JPS54136176A (en) * | 1978-04-13 | 1979-10-23 | Nec Corp | Manufacture of beam lead type semiconductor device |
| US4250520A (en) * | 1979-03-14 | 1981-02-10 | Rca Corporation | Flip chip mounted diode |
| JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
| DE3067381D1 (en) * | 1979-11-15 | 1984-05-10 | Secr Defence Brit | Series-connected combination of two-terminal semiconductor devices and their fabrication |
| GB2067354B (en) * | 1980-01-09 | 1984-04-18 | Aei Semiconductors Ltd | Mounting for a sc device |
| US4278985A (en) * | 1980-04-14 | 1981-07-14 | Gte Laboratories Incorporated | Monolithic integrated circuit structure incorporating Schottky contact diode bridge rectifier |
| JPS56148848A (en) * | 1980-04-21 | 1981-11-18 | Nec Corp | Beam lead type semiconductor device |
| DE3265928D1 (en) * | 1981-01-23 | 1985-10-10 | Fairchild Camera Instr Co | Low resistance schottky diode on polysilicon/metal-silicide |
| JPS59185801U (ja) * | 1983-05-26 | 1984-12-10 | アルプス電気株式会社 | チツプ抵抗 |
| US4577213A (en) * | 1984-03-05 | 1986-03-18 | Honeywell Inc. | Internally matched Schottky barrier beam lead diode |
| JPS6154954A (ja) * | 1984-08-28 | 1986-03-19 | Alps Electric Co Ltd | サ−マルヘツド及びその製造方法 |
| US4708060A (en) * | 1985-02-19 | 1987-11-24 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor bridge (SCB) igniter |
| US4639391A (en) * | 1985-03-14 | 1987-01-27 | Cts Corporation | Thick film resistive paint and resistors made therefrom |
| IT1214621B (it) * | 1985-07-04 | 1990-01-18 | Ates Componenti Elettron | Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta. |
| US4760369A (en) * | 1985-08-23 | 1988-07-26 | Texas Instruments Incorporated | Thin film resistor and method |
| US4811080A (en) * | 1985-08-27 | 1989-03-07 | Fei Microwave, Inc. | Monolithic pin diode and method for its manufacture |
| US4738933A (en) * | 1985-08-27 | 1988-04-19 | Fei Microwave, Inc. | Monolithic PIN diode and method for its manufacture |
| US4792781A (en) * | 1986-02-21 | 1988-12-20 | Tdk Corporation | Chip-type resistor |
| CA1269164A (en) * | 1986-03-24 | 1990-05-15 | Metin Aktik | Photosensitive diode with hydrogenated amorphous silicon layer |
| US4733290A (en) * | 1986-04-18 | 1988-03-22 | M/A-Com, Inc. | Semiconductor device and method of fabrication |
| US4859629A (en) * | 1986-04-18 | 1989-08-22 | M/A-Com, Inc. | Method of fabricating a semiconductor beam lead device |
| US4855796A (en) * | 1986-06-06 | 1989-08-08 | Hughes Aircraft Company | Beam lead mixer diode |
| JPS6347972A (ja) * | 1986-08-18 | 1988-02-29 | Sanyo Electric Co Ltd | 半導体装置 |
| JPS63288062A (ja) * | 1987-05-20 | 1988-11-25 | Nec Corp | ビ−ムリ−ド型ダイオ−ド |
| US4893166A (en) * | 1987-08-21 | 1990-01-09 | Siliconix Incorporated | High value semiconductor resistor |
| US4780424A (en) * | 1987-09-28 | 1988-10-25 | Intel Corporation | Process for fabricating electrically alterable floating gate memory devices |
| US4788523A (en) * | 1987-12-10 | 1988-11-29 | United States Of America | Viad chip resistor |
| JPH01257355A (ja) * | 1987-12-14 | 1989-10-13 | Mitsubishi Electric Corp | マイクロ波モノリシックic |
| US4905071A (en) * | 1988-04-01 | 1990-02-27 | Alpha Industries, Inc. | Monolithic series-shunt diode switch |
| US4999684A (en) * | 1988-05-06 | 1991-03-12 | General Electric Company | Symmetrical blocking high voltage breakdown semiconducotr device |
| US5006421A (en) * | 1988-09-30 | 1991-04-09 | Siemens-Bendix Automotive Electronics, L.P. | Metalization systems for heater/sensor elements |
| US5162258A (en) * | 1988-10-17 | 1992-11-10 | Lemnios Zachary J | Three metal personalization of application specific monolithic microwave integrated circuit |
| US5280194A (en) * | 1988-11-21 | 1994-01-18 | Micro Technology Partners | Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device |
| KR0133730B1 (ko) * | 1988-11-21 | 1998-04-23 | Pulse Microwave M | 링 쿼드에 있어서 쇼트키-배리어 다이오드 용 빔리드 |
| US5024966A (en) * | 1988-12-21 | 1991-06-18 | At&T Bell Laboratories | Method of forming a silicon-based semiconductor optical device mount |
| US4976200A (en) * | 1988-12-30 | 1990-12-11 | The United States Of America As Represented By The United States Department Of Energy | Tungsten bridge for the low energy ignition of explosive and energetic materials |
| WO1990015438A1 (en) * | 1989-06-08 | 1990-12-13 | Unistructure, Inc. | Beam lead and semiconductor device structure and method for fabricating integrated structure |
| JP2605875B2 (ja) * | 1989-07-10 | 1997-04-30 | 富士ゼロックス株式会社 | 抵抗体膜およびその形成方法 |
| JPH03129738A (ja) * | 1989-07-10 | 1991-06-03 | Nec Corp | 半導体装置 |
| US5034801A (en) * | 1989-07-31 | 1991-07-23 | W. L. Gore & Associates, Inc. | Intergrated circuit element having a planar, solvent-free dielectric layer |
| FR2653588B1 (fr) * | 1989-10-20 | 1992-02-07 | Electro Resistance | Resistance electrique sous forme de puce a montage de surface et son procede de fabrication. |
| US5081473A (en) * | 1990-07-26 | 1992-01-14 | Xerox Corporation | Temperature control transducer and MOS driver for thermal ink jet printing chips |
| US5294910A (en) * | 1991-07-01 | 1994-03-15 | Murata Manufacturing Co., Ltd. | Platinum temperature sensor |
| JPH0510828A (ja) * | 1991-07-03 | 1993-01-19 | Murata Mfg Co Ltd | 白金温度センサの製造方法 |
| FR2681978B1 (fr) * | 1991-09-26 | 1993-12-24 | Sgs Thomson Microelectronics Sa | Resistance de precision et procede de fabrication. |
| US5287083A (en) * | 1992-03-30 | 1994-02-15 | Dale Electronics, Inc. | Bulk metal chip resistor |
| US5268310A (en) * | 1992-11-25 | 1993-12-07 | M/A-Com, Inc. | Method for making a mesa type PIN diode |
| US5300461A (en) * | 1993-01-25 | 1994-04-05 | Intel Corporation | Process for fabricating sealed semiconductor chip using silicon nitride passivation film |
| US5466484A (en) * | 1993-09-29 | 1995-11-14 | Motorola, Inc. | Resistor structure and method of setting a resistance value |
| DE4339551C1 (de) * | 1993-11-19 | 1994-10-13 | Heusler Isabellenhuette | Widerstand in SMD-Bauweise und Verfahren zu seiner Herstellung sowie Leiterplatte mit solchem Widerstand |
-
1995
- 1995-06-01 DE DE19580604T patent/DE19580604T1/de not_active Withdrawn
- 1995-06-01 WO PCT/US1995/006929 patent/WO1995034083A1/en not_active Ceased
- 1995-06-01 JP JP8501190A patent/JPH10508430A/ja active Pending
- 1995-06-01 AU AU26599/95A patent/AU2659995A/en not_active Abandoned
- 1995-06-01 KR KR1019960707004A patent/KR100358446B1/ko not_active Expired - Fee Related
- 1995-06-01 GB GB9623265A patent/GB2302452B/en not_active Expired - Fee Related
-
1997
- 1997-05-29 US US08/865,357 patent/US6121119A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2302452B (en) | 1998-11-18 |
| GB2302452A (en) | 1997-01-15 |
| AU2659995A (en) | 1996-01-04 |
| KR100358446B1 (ko) | 2003-01-29 |
| WO1995034083A1 (en) | 1995-12-14 |
| US6121119A (en) | 2000-09-19 |
| HK1011454A1 (en) | 1999-07-09 |
| GB9623265D0 (en) | 1997-01-08 |
| JPH10508430A (ja) | 1998-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |