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DE1690224B1 - BATHROOM FOR ELECTRONIC COPPER PLATING OF PLASTIC PANELS - Google Patents

BATHROOM FOR ELECTRONIC COPPER PLATING OF PLASTIC PANELS

Info

Publication number
DE1690224B1
DE1690224B1 DE19671690224 DE1690224A DE1690224B1 DE 1690224 B1 DE1690224 B1 DE 1690224B1 DE 19671690224 DE19671690224 DE 19671690224 DE 1690224 A DE1690224 A DE 1690224A DE 1690224 B1 DE1690224 B1 DE 1690224B1
Authority
DE
Germany
Prior art keywords
bath
copper
copper plating
plating
bathroom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671690224
Other languages
German (de)
Inventor
Karin Fey
Klaus Rademacher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Original Assignee
Standard Elektrik Lorenz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Elektrik Lorenz AG filed Critical Standard Elektrik Lorenz AG
Priority to DE19671690224 priority Critical patent/DE1690224B1/en
Priority to GB3554168A priority patent/GB1208337A/en
Priority to IE94868A priority patent/IE32240B1/en
Priority to CH1277668A priority patent/CH492381A/en
Priority to BE720093D priority patent/BE720093A/xx
Priority to FR1597506D priority patent/FR1597506A/fr
Publication of DE1690224B1 publication Critical patent/DE1690224B1/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents
    • C23C18/405Formaldehyde
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/07Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process being removed electrolytically
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/425Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/426Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Description

1 21 2

Die Erfindung befaßt sich mit der Herstellung von lischen Medium zu Kupfer(I)-oxid umsetzen wird,The invention is concerned with the production of metallic medium to convert copper (I) oxide,

sogenannten lochplattierten gedruckten Schaltungen. wirkt wahrscheinlich katalytisch auf die Reaktion ent-so-called hole-plated printed circuits. probably has a catalytic effect on the reaction

Bei diesem Herstellungsverfahren bedient man sich sprechend der Reaktionsgleichung:
handelsüblicher unkaschierter Trägermaterialien, z. B.
In this manufacturing process, the reaction equation is used:
commercially available non-laminated carrier materials, e.g. B.

in Form von Trägerplatten oder Trägerfilmen oder 5 Cu+++ 2H CHO + 4 OH ^2HCOO +2H2Oin the form of carrier plates or carrier films or 5 Cu +++ 2H CHO + 4 OH ^ 2HCOO + 2H 2 O

dergleichen. Bei diesen nicht mit einer Kupferfolie ' 2 ~*~ u 'like that. With these not with a copper foil ' 2 ~ * ~ u '

kaschierten Trägern wird also das Leitungsmuster wobei es infolge Selbstzersetzung des Bades zu wildenlaminated carriers will lead to the pattern whereby it will grow wild as a result of the self-decomposition of the bath

schichtweise aufgebaut und die Figuration des Lei- Abscheidungen kommt.built up in layers and the figuration of the deposit comes.

tungsmusters durch Ätzen erzeugt. Es handelt sich Es ist daher Aufgabe der Erfindung, ein Bad für die demnach^ um ein Herstellungsverfahren nach der io stromlose Verkupferung von Kunststoffplatten untertion pattern generated by etching. It is therefore the object of the invention to provide a bath for the accordingly ^ to a manufacturing process after the io electroless copper plating of plastic plates under

Additiv-Ätzmethode. · Verwendung eines Verkupferungsbades anzugeben,Additive etching method. Indicate the use of a copper plating bath,

Es ist bereits ein Verfahren zur Herstellung von durch welches auf den darin eingetauchten Kunststoffgedruckten Schaltungen auf einer Trägerplatte aus platten eine Kupferschicht stromlos niedergeschlagen Isoliermaterial bekannt (deutsche Auslegeschrift wird, wobei die Selbstzersetzung des Verkupferungs-1206 976), bei dem nach einer Aktivierung der Träger 15 bades unterbunden sein soll.There is already a method for the production of by which on the printed circuit boards immersed therein on a carrier plate made of plates, a copper layer is deposited electrolessly Isolation material known (German Auslegeschrift is, whereby the self-decomposition of the copper plating 1206 976), in which the carrier 15 should be prevented from bathing after activation.

stromlos vorverkupfert wird, der vorverkupferte Erfindungsgemäß wird dies dadurch erreicht, daßis pre-coppered without current, the pre-coppered according to the invention this is achieved in that

Träger mit einem Ätzschutzlack bedeckt wird — und zur Stabilisierung des Bades Metallkomplexsalze alsCarrier is covered with an anti-etch varnish - and to stabilize the bath metal complex salts as

zwar derart, daß die Leitungszüge frei bleiben —, die Stabilisatoren beigefügt sind.in such a way that the cables remain free - the stabilizers are attached.

von dem Ätzschutzlack freigelassenen Flächen der Die Stabilisatoren fangen die Spuren von Kupfer I Vorverkupferung und die vorverkupferten Loch- 20 ab und verhindern so die Bildung von Cu2O. Im Gegenwandungen anschließend galvanisch bis auf die^ge- satz zu Stabilisatoren mit freien Zyanidionen ergibt wünschte Dicke verstärkt werden, danach der Ätz- sich hierdurch auch der Vorteil, daß bei der im Betrieb schutzlack abgelöst wird und anschließend der Vor- erforderlichen höheren Konzentration dieser Komverkupferung und die Hauptverkupferung gleich- plexsalze die Bäder besser gesteuert und damit überzeitig mittels Differenzätzung geätzt werden. 25 wacht werden können.The stabilizers capture the traces of copper pre-copper plating and the pre-copper plated holes and thus prevent the formation of Cu 2 O. In the opposite walls then galvanically except for the requirement for stabilizers with free cyanide ions Thickness are increased, after which the etching is thereby also the advantage that the protective varnish is removed during operation and then the required higher concentration of this copper plating and the main copper plating at the same time plex salts, the baths are better controlled and thus etched over time by means of differential etching. 25 can be watched.

Die bisher bei den bekannten Verfahren verwendeten Derart wirkende Komplexe sind z. B. das Kaliumstromlosen Metallbäder weisen erhebliche Nachteile hexacyanoferrat (gelbes Blutlaugensalz) oder Kaliumauf. Die bekannten Silberbäder zur stromlosen Ver- tetracyanoniccolat.The complexes so far used in the known processes are such. B. the potassium electroless Metal baths have significant disadvantages of hexacyanoferrate (yellow blood liquor salt) or potassium. The well-known silver baths for currentless tetracyanoic colate.

silberung sind zu teuer und zu unstabil und ergeben, Solche erfindungsgemäßen Kupfermetallbäder zurSilver plating are too expensive and too unstable and result in such copper metal baths according to the invention for

bei der Herstellung von gedruckten Schaltungen ange- 30 stromlosen Verkupferung können sich daher wie folgtIn the manufacture of printed circuit boards, electroless copper plating can therefore be as follows

wendet, eine »Silberwanderung« auf der Trägerober- zusammensetzen:turns, putting together a »silver hike« on the top of the girder:

fläche, welche die Schaltungen elektrisch unbrauchbar y
macht.; -■■■■■■■"-
area which the circuits are electrically unusable y
power.; - ■■■■■■■ "-

An Stelle von Silber kann auch Nickel stromlos ^ !γν^Τ??Instead of silver, nickel can also be electroless ^ ! Γν ^ Τ ??

niedergeschlagen werden. Nickel ist jedoch wegen 35 Tr^ f · \i rmget knocked down. However, nickel is due to 35 Tr ^ f · \ i rm

seiner schlechten Leitfähigkeit für gedruckte Schal- ^g H;eie Λ Jr λits poor conductivity for printed circuit- ^ g H; eie Λ Jr λ

tungen ungeeignet. Auch wenn Nickel stromlos als 1^ S ^ο™^Γι ^ .... «. Λ unsuitable. Even if nickel is currentless as 1 ^ S ^ ο ™ ^ Γι ^ .... «. Λ

dünne Unterlage und als Elektrode für die galvanische °>05 § K* tNl (CN^ (Stabilisator)
Auftragung einer dickeren Kupferschicht verwendet
würde, so würde das wegen der schlechten Leitfähig- 40
thin pad and as an electrode for the galvanic °> 05 § K * t Nl ( CN ^ (stabilizer)
Application of a thicker copper layer used
would, it would because of the poor conductivity- 40

keit zu unterschiedlichen Dicken der Kupferschicht 10 g CuCl2 · 2 H2OAbility to different thicknesses of the copper layer 10 g CuCl 2 · 2 H 2 O

führen. Weitere Schwierigkeiten würden sich ergeben, 56,5 g K NaC4H6O6 to lead. Further difficulties would arise, 56.5 g of K NaC 4 H 6 O 6

wenn das Nickel neben dem Kupfer beim sogenannten 14,7 g freie NaOHif the nickel in addition to the copper in the so-called 14.7 g of free NaOH

Differenzätzen ausgeätzt werden muß. 12 g FormaldehydDifferential etching must be etched out. 12 g formaldehyde

Bei dem bekannten Verfahren wird nach einer Ent- 45 °>5 S K* \Pe (GN)6] (Stabilisator)
fettung, die vorzugsweise in einem alkalischen Entfettungsbad erfolgt, die Oberfläche der Trägerplatte HI
mit handelsüblichen oder bereits bekannten AM- 10 g CuCl2 · 2 H2O
vlerungslösungen aktiviert. Die' Behandlung mit 56,SgKNaC4H4O6
solchen Aktivierungslösungen ist als Vorbehandlung 50 10 g freie NaOH
für die stromlose Metallisierung an sich bekannt. 8,7 g Formaldehyd
Durch sie werden diskrete Stellen auf dem nicht me- 1,3 g K4 [Fe (CN)6] \ Q. Ky .
tallischen Trägerkörper aktiviert, an denen sich bei der 0,6 g K3 [Cu (CN)4] J öiaDlusaioren
nachfolgenden stromlosen* Metallisierung Metallionen · · -
In the known method, after a 45 °> 5 S K * \ P e (GN) 6 ] (stabilizer)
greasing, which is preferably carried out in an alkaline degreasing bath, the surface of the carrier plate HI
with commercially available or already known AM 10 g CuCl 2 · 2 H 2 O
solutions activated. Treatment with 56, SgKNaC 4 H 4 O 6
such activation solutions are pretreated with 50 10 g of free NaOH
known per se for electroless metallization. 8.7 g formaldehyde
They create discrete spots on the not me- 1.3 g K 4 [Fe (CN) 6 ] \ Q. Ky .
activated metallic carrier bodies, on which the 0.6 g of K 3 [Cu (CN) 4 ] J öiaDlusaioren
subsequent electroless * metallization metal ions -

fest anlagern sollen. Die Oberfläche des Trägerkörpers 55 Die stromlose Metallisierung »Vorplattierung«, dieshould be firmly attached. The surface of the carrier body 55 The electroless metallization "pre-plating", the

wird dadurch mit Metallkeimen belegt, die dem in der Regel in einer Dicke von etwa 4 μ gebrauchtis covered with metal nuclei, which are usually needed in a thickness of about 4 μ

weiteren additiven Aufbau der Leitschicht dienen. wird, erfolgt mit Bad I und II vorteilhafterweise beiserve further additive structure of the conductive layer. is carried out with bath I and II advantageously at

Die bisher bekannten Lösungen für die stromlose Raumtemperatur, während zur Abscheidung dickererThe previously known solutions for the currentless room temperature, while for the deposition of thicker

Metallisierung mit Kupfer haben nun aber den Nach- Kupferschichten das Bad III bei etwa 45° C betriebenMetallization with copper, however, have now operated the post-copper layers in bath III at around 45 ° C

teil, daß sie leicht zusammenbrechen und dadurch 60 wird,part of the fact that it collapses easily and thus becomes 60,

eine Erzeugung dickerer Schichten verhindern. Die Erfindung ist jedoch nicht auf die genaue Ein-prevent the generation of thicker layers. However, the invention is not limited to the precise

Die bei der stromlosen Metallisierung stattfindende haltung dieser Temperaturen und Konzentrationen Reduktion des Kupfer(II)-ions zu metallischem Kupfer beschränkt, sondern diese können der jeweiligen Anerfolgt über die Oxydationsstufe Kupfer I. Bei den Wendung angepaßt werden.The maintenance of these temperatures and concentrations during electroless metallization Reduction of the copper (II) ion to metallic copper is limited, but this can be done depending on the situation via the oxidation level copper I. Be adapted at the turn.

bisher verwendeten stromlosen Kupferbädem wird ein 65 Nachdem diese stromlose Metallisierung (Vorwahrscheinlich geringer Anteil Kupfer(TI)-ion nur auf plattierung) mit in der Regel von 4 μ Dicke erfolgt die Kupfer(I)-Stufe reduziert. Das sich so in den ist, wird das negative Leitermuster dann nach bekann-Bädern anreichernde Kupfer I, welches sich im alka- ten Verfahren entweder im Siebdruck- oder nach demElectroless copper baths used up to now are 65 After this electroless metallization (presumably a low proportion of copper (TI) ion only on plating) with a thickness of usually 4 μ , the copper (I) level is reduced. That is so in the, the negative conductor pattern is then after well-known baths enriching copper I, which is in the alkaline process either in the screen printing or after the

Photolack- oder Offsetverfahren auf die Vorplattierung aufgetragen. Die nicht abgedeckten Flächen, die also dem positiven Leitungsmuster entsprechen, werden nun galvanisch mittels saurer Kupferbäder bis auf die gewünschte Dicke von z. B. 35 μ aufgebaut.Photoresist or offset process applied to the pre-plating. The uncovered areas that So correspond to the positive line pattern, are now galvanized by means of acidic copper baths up to the desired thickness of e.g. B. 35 μ built.

Die so vorbehandelten Trägerplatten werden nach dem üblichen Wässern bei Temperaturen zwischen 100 und 1800C gesintert. Meist liegt die günstigste Temperatur, um Beschädigungen des Trägerplattenmaterials zu vermeiden, bei 160° C während 2 Stunden.The carrier plates pretreated in this way are sintered at temperatures between 100 and 180 ° C. after the customary soaking. The most favorable temperature to avoid damage to the carrier plate material is usually 160 ° C for 2 hours.

Bei der Aufgalvanisierung der Hauptplattierung, die sich auf der etwa 4 μ dicken Vorplattierung aufbaut, werden diese 4 μ,#<ϋε auf dem negativen Leitungsmuster wieder durch Ätzen entfernt werden, dadurch berücksichtigt, daß die Hauptplattierung eine Dicke von 35 + 4 = 39 μ erhält. Nach Abätzen von 4 μ verschwindet die Vorplattierung, und die Hauptplattierung erhält ihre genaue Dicke von 35 μ.When electroplating the main plating, which is built up on the approx. 4 μ thick pre-plating, these 4 μ, # <ϋε on the negative conductor pattern are removed again by etching, taking into account that the main plating has a thickness of 35 + 4 = 39 μ receives. After 4 μ has been etched off, the pre-plating disappears and the main plating is given its exact thickness of 35 μ.

Die technischen Eigenschaften der nach diesem Verfahren erzeugten gedruckten Schaltungen sind außerordentlich gut und übertreffen zum Teil die bisher bekannte Güte.The technical characteristics of the printed circuit boards produced by this process are exceptionally good and in some cases exceed the previously known quality.

Der nach dem genormten Ringelektrodenverfahren gemessene Isolationswiderstand beträgt bei den erfindungsgemäß hergestellten Trägerplatten aus Phenolhartpapier 3 · 105 ΜΩ. Die Haftfestigkeit (Schälfestigkeit) zwischen Kupferplattierung und Träger (gemessen nach DIN 40802 No. 5.5.2.1. und No 5.5.2.2. vom Dezember 1960) erreicht den außerordentlich hohen Wert von über 2500 p/inch (rund 1000 p/cm).The insulation resistance measured according to the standardized ring electrode method is 3 · 10 5 Ω in the carrier plates made of phenolic hard paper according to the invention. The adhesive strength (peel strength) between the copper cladding and the carrier (measured in accordance with DIN 40802 No. 5.5.2.1. And No. 5.5.2.2. Of December 1960) reaches the extraordinarily high value of over 2500 p / inch (around 1000 p / cm).

Um die fertigen Platten gut löten zu können, werden sie in einem mit Wasserstoffperoxid oder Ammoniumpersulfat versehenen Schwefelsäurebad dekapiert.In order to be able to solder the finished boards well, they are in a with hydrogen peroxide or ammonium persulphate provided sulfuric acid bath.

Um die Platten gegen Korrosion bei Lagerung zu schützen, können sie noch wie folgt weiterbehandelt werden:In order to protect the plates against corrosion during storage, they can be further treated as follows will:

Überziehen mit einem lötbaren Schutzlack, stromloser Überzug aus korrosionsverhinderndem Metall und/oder Tauchen in Wasserverdränger.Coating with a solderable protective varnish, currentless Coating of corrosion-preventing metal and / or immersion in water displacers.

Claims (8)

Patentansprüche:Patent claims: 1. Bad für die stromlose Verkupferung von Kunststoffplatten unter Verwendung eines Ver-1. Bath for the electroless copper plating of plastic plates using a 40 kupferungsbades, durch welches auf den darin eingetauchten Kunststoffplatten eine Kupferschicht stromlos niedergeschlagen wird, dadurch gekennzeichnet, daß zur Stabilisierung des Bades Metallkomplexsalze als Stabilisatoren beigefügt sind. 40 copper bath, through which a copper layer is deposited electrolessly on the plastic plates immersed therein, characterized in that metal complex salts are added as stabilizers to stabilize the bath. 2. Bad nach Anspruch 1, dadurch gekennzeichnet, daß als Stabilisator K2 [Ni (CN)4] beigefügt ist.2. Bath according to claim 1, characterized in that K 2 [Ni (CN) 4 ] is added as a stabilizer. 3. Bad nach Anspruch 1, dadurch gekennzeichnet, daß als Stabilisator K4 [Fe (CN)6] beigefügt ist.3. Bath according to claim 1, characterized in that K 4 [Fe (CN) 6 ] is added as a stabilizer. 4. Bad nach Anspruch 1, dadurch gekennzeichnet, daß als Stabilisator K3 [Cu (CN)4] beigefügt ist.4. Bath according to claim 1, characterized in that K 3 [Cu (CN) 4 ] is added as a stabilizer. 5. Bad nach Anspruch 1, dadurch gekennzeichnet, daß die Stabilisatoren nach Ansprüchen 3 und 4 gemeinsam beigefügt sind.5. Bath according to claim 1, characterized in that the stabilizers according to claims 3 and 4 are attached together. 6. Bad nach Anspruch 2, gekennzeichnet durch ein stabilisiertes Verkupferungsbad mit im wesentlichen folgender Zusammensetzung:6. Bath according to claim 2, characterized by a stabilized copper plating bath with substantially the following composition: 15 g CuCl2 · 2 H2O 40 g K Na C4H4O6 13 g freie NaOH15 g CuCl 2 · 2 H 2 O 40 g K Na C 4 H 4 O 6 13 g free NaOH 11 g Formaldehyd 0,05 g K2 [Ni (CN)4]11 g formaldehyde 0.05 g K 2 [Ni (CN) 4 ] 7. Bad nach Anspruch 3, gekennzeichnet durch ein stabilisiertes Verkupferungsbad mit im wesentlichen folgender Zusammensetzung:7. Bath according to claim 3, characterized by a stabilized copper plating bath with substantially the following composition: 10 g CuCl2 · 2 H2O 56,5 g K Na C4H6O6 14,7 g freie NaOH10 g CuCl 2 · 2 H 2 O 56.5 g K Na C 4 H 6 O 6 14.7 g free NaOH 12 g Formaldehyd 0,5 g K4 [Fe (CN)6]12 g formaldehyde 0.5 g K 4 [Fe (CN) 6 ] 8. Bad nach Anspruch 5, gekennzeichnet durch ein stabilisiertes Verkupferungsbad mit im wesentlichen folgender Zusammensetzung:8. Bath according to claim 5, characterized by a stabilized copper plating bath with substantially the following composition: 10 g CuCl2 · 2 H2O 56,5 g K Na C4H4O6 10 g freie NaOH10 g CuCl 2 · 2 H 2 O 56.5 g K Na C 4 H 4 O 6 10 g free NaOH 8,7 g Formaldehyd8.7 g formaldehyde 1,3 g K4 [Fe (CN)6]1.3 g K 4 [Fe (CN) 6 ] 0,6 g K3 [Cu (CN)4]0.6 g K 3 [Cu (CN) 4 ]
DE19671690224 1967-08-29 1967-08-29 BATHROOM FOR ELECTRONIC COPPER PLATING OF PLASTIC PANELS Pending DE1690224B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19671690224 DE1690224B1 (en) 1967-08-29 1967-08-29 BATHROOM FOR ELECTRONIC COPPER PLATING OF PLASTIC PANELS
GB3554168A GB1208337A (en) 1967-08-29 1968-07-25 Method to produce printed circuits
IE94868A IE32240B1 (en) 1967-08-29 1968-08-06 Method to produce printed circuits
CH1277668A CH492381A (en) 1967-08-29 1968-08-26 Process for the production of printed circuits
BE720093D BE720093A (en) 1967-08-29 1968-08-29
FR1597506D FR1597506A (en) 1967-08-29 1968-08-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19671690224 DE1690224B1 (en) 1967-08-29 1967-08-29 BATHROOM FOR ELECTRONIC COPPER PLATING OF PLASTIC PANELS

Publications (1)

Publication Number Publication Date
DE1690224B1 true DE1690224B1 (en) 1971-03-25

Family

ID=5687555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671690224 Pending DE1690224B1 (en) 1967-08-29 1967-08-29 BATHROOM FOR ELECTRONIC COPPER PLATING OF PLASTIC PANELS

Country Status (6)

Country Link
BE (1) BE720093A (en)
CH (1) CH492381A (en)
DE (1) DE1690224B1 (en)
FR (1) FR1597506A (en)
GB (1) GB1208337A (en)
IE (1) IE32240B1 (en)

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DE2932536A1 (en) * 1979-08-09 1981-02-26 Schering Ag METHOD FOR PRODUCING PRINTED CIRCUITS
KR100861619B1 (en) * 2007-05-07 2008-10-07 삼성전기주식회사 Thermal printed circuit board and its manufacturing method
US10573610B2 (en) 2014-05-19 2020-02-25 Catlam, Llc Method for wafer level packaging
US9398703B2 (en) * 2014-05-19 2016-07-19 Sierra Circuits, Inc. Via in a printed circuit board
US9706667B2 (en) 2014-05-19 2017-07-11 Sierra Circuits, Inc. Via in a printed circuit board
US10849233B2 (en) 2017-07-10 2020-11-24 Catlam, Llc Process for forming traces on a catalytic laminate
US10349520B2 (en) 2017-06-28 2019-07-09 Catlam, Llc Multi-layer circuit board using interposer layer and conductive paste
US10765012B2 (en) 2017-07-10 2020-09-01 Catlam, Llc Process for printed circuit boards using backing foil
US10827624B2 (en) 2018-03-05 2020-11-03 Catlam, Llc Catalytic laminate with conductive traces formed during lamination
CN113755838B (en) * 2021-09-10 2024-03-15 大富科技(安徽)股份有限公司 Metal copper surface etching process and automatic production line

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DE1199344B (en) * 1959-12-29 1965-08-26 Gen Electric Process for making a printed circuit board
DE1206976B (en) * 1963-09-19 1965-12-16 Siemens Ag Process for producing printed circuits according to the build-up method
FR1449945A (en) * 1964-08-19 1966-05-06 Photocircuits Corp Improvements to Multilayer Printed Circuit Devices

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Publication number Priority date Publication date Assignee Title
DE1199344B (en) * 1959-12-29 1965-08-26 Gen Electric Process for making a printed circuit board
DE1206976B (en) * 1963-09-19 1965-12-16 Siemens Ag Process for producing printed circuits according to the build-up method
FR1449945A (en) * 1964-08-19 1966-05-06 Photocircuits Corp Improvements to Multilayer Printed Circuit Devices

Also Published As

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IE32240B1 (en) 1973-05-30
IE32240L (en) 1969-02-28
FR1597506A (en) 1970-06-29
GB1208337A (en) 1970-10-14
BE720093A (en) 1969-02-28
CH492381A (en) 1970-06-15

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