DE1591725B2 - MICROWAVE OSCILLATOR - Google Patents

Description

3 4

speaks with which the high field zone represents the semiconductor body. The metal layer 11 is provided with an external

perl wanders through. The semiconductor body is connected to an element 12. At a distance from this is

a recess 4 is provided, which corresponds to the corresponding also perpendicular to the indicated by the arrow

affected oscillation. This is expressed in the drift direction the recess 13 with a metal

by the deformation of the current /, as shown in FIG. 5, stamp 14 is fully filled. The metal stamp itself

F i g. 1 b is indicated at 7. The one shown is connected to the external element 15. Short

The embodiment is the recess 4 perpendicularly in front of the metallization acting as an anode

to the drift direction and parallel to the two electrical end faces of the semiconductor body is a further

the 2 and 3 attached. recess 16 attached, which is perpendicular to the drift movement

With this position of the recess, one can thus run parallel to the anode. The Ausspa-

by choosing the recess cross-section and by tion is designed so that you can at her one

the position of the recess in the output current i at the prc layer, at which the rectified

for example, pulses or certain current curves can pick up voltage.

produce. One area of application for such oscillators is the use of fast-flying objects if the external elements 12 and 15 are suitable - additional voltage sources that can be connected, as the multitude of possible pulse shapes len, resistances or short circuits that run parallel or a slight distinction between different objects in Series to be part of the semiconductor body 9 allows. - in this way, the course that occurs in the outer circle can be influenced in a variety of ways, deviating from the shape of the current indicated in FIG. 1, with a constant cross section of the ² ° sen.

Semiconductor body can be used in all applications Change shape. Wall of the bore is successively with two insulating particular allowed to the effective cross section ² 5 th metal pads 19 and 21 are provided. The outer (taking into account the recess) in the drift edge of the disc also contains two metal coatings increasing in the direction of the charge carriers. 20 and 22. An inner covering and a corresponding outer covering with the previously indicated external covering can directly result in the desired influence with voltage sources as cathode or anode by means of suitable connection shapes, position and size of the recess, can act in 3 °. Preferably, the coverings 19 and, as a continuation of the inventive concept, the recess 21 will be used as the cathode. The shape, which is also indirectly used for influencing in FIG. 3, is made possible with suitable dimensions. So the recess can be drifted, for example. B. that two oscillations or one oscillation of the charge carriers run, and arise in the supply and a gain at the same time. The recess is then additionally coupled somewhat, 35 by means of various doping between the electrons, with which the high-field zone that is formed is influenced and / or by a non-circular design. These can be passive and / or active elements. Disc 17, one has the option of different ones. It is also possible, with the help of an oscillating frequency, whose mutual recess-acting heat or RF field can be used to influence the effect (in the semiconductor body itself or on the desired control of the effect by opening towards the characteristic curve) a large spectrum of emerging electron or photon beam at frequencies results.

Use controls. A large area of application In FIG. 4, a further exemplary embodiment results from the fact that the recess or is shown. The active layer of the semiconductor body 23, only the walls of which are at least partially in contact, is thereby actuated in itself using epitaxial planar technology. This contact in the sense of the invention is applied in a known manner to a heat sink 24, to be understood here very broadly. You can establish an ohmic connection that is marked with minus and plus. Furthermore, the contact lines symbolize the cathode and the anode can be insulated. It is also possible to order this contact area. Two recesses are to be formed as a pn junction near the cathode. In any case 50 25 and 26 attached. If the semiconductor body 23, such a contacted recess is operated below the critical field strength and this can be used to influence the critical value in the semiconductor body only when the process that occurs, ie cutouts 25 and 26 to be triggered, are simultaneously cut or to steer in the desired sense. If suitable signals are applied, a logic circuit that does not depend on the position of the recess and acts as an AND circuit is obtained. If it is expedient, with the aid of the electrode and anode of the arrangement also shown in the figure through a contact recesses 28 and 29, with a suitably designed recess can be formed with a direction (size and / or contact ) a suitable DC voltage source can be divided in connection with the output signal. The one with hen. 60 27 designated recess between the cathode and In the Fig. 2 an embodiment is schematic anode gives the possibility that at this point table is shown in which the semiconductor body 9 is a part of the wandering through or build up between the cathode and the anode in the sectional the high field zone is decoupled. So you can have the same external dimensions. The influencing logic circuits with a very short response time flow will build up here indirectly through the recesses 65, which is shorter than the running time of the high-10, 13 and 16 effects. In order to indicate the numerous possible field zones through the entire semiconductor body, how the invention can be varied through to the anode. In the so-called LSA mode, the bore 10 is metallized in FIG. 2 in which such a semiconductor body is operated

5 6

is increased, in the design indicated above, the oscillation frequencies through a suitable choice

the number of ways in which the critical length of the material can be influenced or by

and thus the number of use cases. different doping results in a frequency conversion

Another arrangement is shown in FIG. In addition, the arrangement can be used as a run, in which the semiconductor body use pants-shaped 5 time chain. All vibrations are not trained and is tapped from the sections 30 and 33 that arise, this is multiplied with the associated cathodes 31 and 34. inserted into the input-side semiconductor body 40 The sections mentioned come together at the other level, preferably a pulse-shaped signal corresponding to the end to a common semiconductor body, corresponding to the number, circuit and recesses of the sen end faces with anodes isolated from one another io subsequent semiconductor bodies 37 and 38. In the 32 and 35 is provided. For the sake of simplicity, Fig.6 has also been omitted from all unwichder entire semiconductor body with the same thickness, details shown, yet another semiconductor body 39 represents, although he generally also draws at least one, the one with at least one, the rest can be partially curved. If the arrangement is so implemented by a suitably designed semiconductor body dimensioned so that both parts at the same time as an oscilloscope recess (simple hole or "contacted" act lator, so the opening) can be coupled through the recess 36. This semiconductor body 39 Mixed products are removed. For example, if a part can be dimensioned to be acts as an amplifier, then the mentioned amplifier can act.

In a further embodiment of the invention, the

stronger signal are tapped, which as already 20 semiconductor bodies are also designed so that a as

mentioned at least ohmic coating formed by using a pn layer in an electrode

DC voltage signal can be converted. partially the wall of a waveguide, a pot circle Λ

For a multiplication, frequency conversion or preferably an antenna, where in V |

If the input signal is activated or delayed, the second required electrode is also suitable.

In particular, an embodiment as it can serve as a radiator in FIG. 25 and the coupling

6 is indicated. In this case, several or decoupling of the HF energy via the disconnection

Semiconductor bodies 37, 38, 39 and 40 are thus made into a building.

unit arranged that the overall arrangement min- The production of the recesses can thereby at least one corresponding recess 41 is made so that one can build up the active layer If the two semiconductor bodies 37 and 38 are already cut out suitable locations as 30. Furthermore it is possible oscillator (e.g. at the same time) effective, so can be borrowed, subsequently the recesses depending on the pre-coupling to attach requirements lying above the suitably designed recess, which is for example 41 the subcritically operated semiconductor body 38, by using so-called LASER Be "triggered". With different dimensions- rays can take place.

1 sheet of drawings

Claims (8)

1 2, an active layer was used as the crystal. Made of η-conductive gallium arsenide, the oscillation frequency being dependent only on the strength of the active 1. Arrangement with at least one half-layer between the required electrical Conductor component, consisting of a single crystal 5 field (about 3000 V / cm) generating electrodes, the linen semiconductor, preferably a III- with the semiconductor body in conductive connection V-compound semiconductor, which stand when exceeded, depended. a critical electric field strength. In the meantime it has become possible to Reason to dop and operate a conductor body within the semiconductor body in such a way that training and preferably wandering through the frequency of the resulting vibrations High field zone a differential table no longer depends on the electrode spacing, so forms negative resistance, thereby obtaining even higher oscillation frequencies indicates that the semiconductor body with or through thicker crystal layers has larger lines preferably achieved perpendicular to the drift movement stungen. This behavior is called in the 15 Anglo-American trade press »LSA-mode« is, over which the high field zone by queuing through the abbreviation from the words »limited Conclusion of a voltage, light, heat or space charge accumulation (Bell Syst. Techn. Jour-HF source is triggered or influenced. nal, 46 [1967], p. 284). 2. Arrangement according to claim 1, characterized in order to the so-called "Gunn effect", that the cross sections of the bore 20 existing negative resistance in the desired sense and thus to influence the remaining effective cross-section, it has also become known, min-section of the semiconductor body through which the at least one on the surface of the active layer High-field zone moves, according to the attached control electrode to be provided with desired shape is selected. a suitable control voltage is applied. 3. Arrangement according to claim 1 or 2, there- 25 In addition, it has been recognized that one through characterized in that the recess with bevels or slits of the edge of the halve at least is provided with a contact. conductor body the curve shape of the in the outer circle of the 4. Arrangement according to claim 3, whereby the arrangement can influence flowing current ■ indicates that the contact is used as an anode or (Transact. IEEE ED-14 [1967], p. 535). Cathode works. 30 Belgian patent specification 665 303 makes it 5. Arrangement according to claim 3, characterized in that a "Gunn element" is known in which indicates that the contact is at least partially by constricting the cross-section of the wise the wall of a waveguide, a pot circle applied DC voltage caused field strength verse or an antenna. run in this area is changed. 6. Arrangement according to one of the preceding 35 The invention has now set itself the task of Claims, characterized in that at least the possibilities for influencing the destesting two holes are available and the existing extremely short-wave microwave oscillation Use arrangement as a logical circuit to reveal a new way of using it finds. the field of application of such semiconductor arrangements 7. The arrangement according to one of the preceding 40 is significantly expanded. Claims, characterized in that according to the invention it is proposed for this purpose that At least two semiconductor bodies are arranged one above the other, the semiconductor body, preferably with a sunk are that this leaches at least one corresponding to the drift movement of the charge carriers Bore in common. fenden hole is provided, through which the high- 8. Arrangement according to one of the preceding 45 field zone by connecting a voltage, light, Claims, characterized in that the heat or HF source is triggered or influenced Semiconductor body is formed disc-shaped. and the contacted hole is centrally located. With the help of the figures, some of the possible Embodiments are briefly explained.
50 In FIG. 1 α is a semiconductor body 1 shown represents, which is constructed in the shape of a cuboid. He owns two Electrodes 2 and 3, which are in extensive ohmic contact with the semiconductor body. By arrival The present invention is based on an arrangement of a suitable electric field arises in the tion with at least one. Semiconductor component, 55 semiconductor body through a differential resistance consisting of a monocrystalline semiconductor, in front of the construction of a so-called high field zone, which preferably a ΙΠ-V compound semiconductor, which preferably completely penetrates the semiconductor body Exceeding a critical electric field and when arriving at the anode 3 im strength due to a within the semiconductor current / the outer circuit one in Fig. 1 b with6 body forming and emits this preferably 60 designated pulse. Is the applied field wandering High field zone has a differential strength above that for triggering vibration negatives Resistance forms. the required critical field strength, so again- This effect has recently been called what is called the process. In Fig. 1b, the "Gunn effect" has become known (IBM Journal, states that the arrangement is not in the so-called LSA-April 1964, p. 141) and is already used to operate 65 mode, which is why the output pulses 5 to build oscillators and amplifiers that work in and 6 that work with microwave oscillations in the upper GHz range. In the case of the first ventricular representation, at a distance on the dete form with which this effect is applied, the time axis t is plotted, which corresponds to the time.