DE1282621B - Process for producing, in particular, monocrystalline silicon carbide - Google Patents
Process for producing, in particular, monocrystalline silicon carbideInfo
- Publication number
- DE1282621B DE1282621B DED50644A DED0050644A DE1282621B DE 1282621 B DE1282621 B DE 1282621B DE D50644 A DED50644 A DE D50644A DE D0050644 A DED0050644 A DE D0050644A DE 1282621 B DE1282621 B DE 1282621B
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- monocrystalline
- substrate
- silicon
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 6
- 238000000034 method Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910026551 ZrC Inorganic materials 0.000 description 3
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N trimethylsilyl-trifluoromethansulfonate Natural products C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Die vorliegende Erfindung bezieht sich auf ein Verfahren zum Herstellen von insbesondere monokristallinem Siliziumkarbid, das sich für die Verwendung als Halbleiter in mikroelektronischen Schaltungen in Umgebungen mit hoher Temperatur eignet.The present invention relates to a method of manufacture of, in particular, monocrystalline silicon carbide, which is suitable for use as Semiconductors in microelectronic circuits in high temperature environments suitable.
Der Einsatz von Halbleitern in elektronischen Vorrichtungen hat viele neue Anwendungsgebiete für elektronische Schaltungen eröffnet. Ein ganz bedeutendes Anwendungsgebiet ist der Einsatz bei hohen Temperaturen, in denen Vakuumröhren konventioneller Technik versagen oder sogar schmelzen würden. Halbleitervorrichtungen, die aus den üblicherweise verwendeten Werkstoffen bestehen, wie z. B. Silizium und Germanium, können bei höheren Temperaturen als konventionelle Vakuumröhren eingesetzt werden und haben überdies noch einen stark herabgesetzten Leistungsbedarf. Es gibt jedoch noch viele wichtige Anwendungen in Raketen und Steuereinrichtungen, für die Schaltungen mit noch höheren Temperaturfestigkeiten erwünscht oder sogar erforderlich sind.The uses of semiconductors in electronic devices have many opens up new areas of application for electronic circuits. A very important one The area of application is the use at high temperatures, in which vacuum tubes are more conventional Technology would fail or even melt. Semiconductor devices consisting of the commonly used materials exist, such as. B. silicon and germanium, can be used at higher temperatures than conventional vacuum tubes and, moreover, have a greatly reduced power requirement. There are, however still many important applications in missiles and control devices, for the circuits with even higher temperature strengths are desired or even required.
Die Anwendung von Siliziumkarbid in Schaltungen mit hohen Umgebungstemperaturen ist bekannt. Wegen der großen Energie, die zum Aufbrechen der kovalenten Bindungen in dem Siliziumkarbid erforderlich ist, ist es schon bei Temperaturen von über 600° C verwendet worden. Die große Bindungsenergie gewährleistet auch eine ausgezeichnete Strahlungsfestigkeit.The use of silicon carbide in circuits with high ambient temperatures is known. Because of the great energy required to break the covalent bonds in which silicon carbide is required, it is already at temperatures of over 600 ° C has been used. The large binding energy also ensures an excellent one Radiation resistance.
Es ist ein Verfahren zum Herstellen von Siliziumkarbidüberzügen bekannt, bei dem Siliziumchloriddämpfe bei hohen Temperaturen an Zirkonkarbid-oder Tantalkarbidfäden vorbeigeleitet wurden, auf denen sich ein Überzug aus Siliziumkarbid abscheidet. Zirkonkarbid und Tantalkarbid sind aber verhältnismäßig schwierig in monokristalliner Form herzustellen. Schwierigkeiten ergeben sich weiter dadurch, daß das Siliziumkarbid eine andere Oberflächen- und Kristallstruktur als Zirkonkarbid und Tantalkarbid hat, so daß mechanische Spannungen auftreten.A method for producing silicon carbide coatings is known, in the case of silicon chloride vapors at high temperatures on zirconium carbide or tantalum carbide threads were bypassed, on which a coating of silicon carbide is deposited. However, zirconium carbide and tantalum carbide are relatively difficult to use in monocrystalline To make shape. Difficulties arise further from the fact that the silicon carbide a different surface and crystal structure than zirconium carbide and tantalum carbide has, so that mechanical stresses occur.
Die Erfindung geht daher von einem anderen bekannten Verfahren zum Herstellen von insbesondere monokristallinem Siliziumkarbid durch thermische Zersetzung von Silizium- und Kohlenstoff enthaltenden Gasen an einem Substrat aus, das ein ähnliches Kristallgitter wie Siliziumkarbid hat.The invention is therefore based on another known method for Production of, in particular, monocrystalline silicon carbide by thermal decomposition of gases containing silicon and carbon on a substrate, which is a has a crystal lattice similar to that of silicon carbide.
Bei dem bekannten Verfahren erfolgt die Zersetzung an einem polykristallinem Siliziumkarbidstab. Das gebildete Siliziumkarbid fällt in Form eines Pulvers oder in Form von kleinen Kristallen an.In the known method, the decomposition takes place on a polycrystalline Silicon carbide rod. The silicon carbide formed falls in the form of a powder or in the form of small crystals.
Die Herstellung von monokristallinem Siliziumkarbid geht dann besonders günstig vor sich, wenn das Substrat die gleiche Struktur aufweist, d. h. ebenfalls monokristallin ist. Auf einem polykristallinem Substrat kann sich eine monokristalline Siliziumkarbidschicht praktisch nicht abscheiden. Die Herstellung von monokristallinem Siliziumkarbid zur Verwendung als Substrat ist aber außerordentlich schwierig. Diese Schwierigkeit der Beschaffung eines Substrats mit monokristalliner Struktur vermeidet die Erfindung.The production of monocrystalline silicon carbide then works particularly well favorable if the substrate has the same structure, d. H. Likewise is monocrystalline. A monocrystalline Practically no silicon carbide layer is deposited. The manufacture of monocrystalline However, silicon carbide for use as a substrate is extremely difficult. These Avoids difficulty in obtaining a substrate with a monocrystalline structure The invention.
Das erfindungsgemäße Verfahren zum Herstellen von insbesondere monokristallinem Siliziumkarbid durch thermische Zersetzung von Silizium- und kohlenstoffhaltigen Gasen an einem Substrat, das ein ähnliches Kristallgitter wie Siliziumkarbid hat, ist dadurch gekennzeichnet, daß die Zersetzung an einem monokristallinem Saphir durchgeführt wird. Ein monokristalliner Saphir läßt sich einfach beschaffen. Das verwendete Gas kann in üblicher Weise entweder ein Organosilan oder ein Gemisch aus gasförmigen Siliziumverbindungen und Kohlenstoffverbindungen sein. Die thermische Reduktion wird in bekannter Weise in einem Strom eines Trägergases, wie Wasserstoff oder Argon, durchgeführt.The inventive method for producing, in particular, monocrystalline Silicon carbide by thermal decomposition of silicon and carbonaceous Gases on a substrate that has a crystal lattice similar to silicon carbide, is characterized in that the decomposition occurs on a monocrystalline sapphire is carried out. A monocrystalline sapphire is easy to obtain. That The gas used can be either an organosilane or a mixture in the usual way be made of gaseous silicon compounds and carbon compounds. The thermal Reduction is carried out in a known manner in a stream of a carrier gas such as hydrogen or argon.
Das monokristalline Saphirsubstrat hat ein Kristallgitter, das sich sehr stark an die Kristallgitterstruktur von Siliziumkarbid annähert. Durch thermische Zersetzung des das Silizium und den Kohlenstoff enthaltenden Gases bei bekannten Temperaturen oberhalb von 1650° C bilden das Silizium und der Kohlenstoff Siliziumkarbid in einer insbesondere monokristallinen Konfiguration, die vermutlich durch das Kristallgitter des Substrats verursacht wird.The monocrystalline sapphire substrate has a crystal lattice that is closely approximates the crystal lattice structure of silicon carbide. By thermal Decomposition of the gas containing the silicon and the carbon in known At temperatures above 1650 ° C, silicon and carbon form silicon carbide in a particularly monocrystalline configuration, presumably through the crystal lattice of the substrate.
Alle Gase, die bisher für die Herstellung von Siliziumkarbid durch thermische Zersetzung von Gasen bekannt sind, eignen sich für das vorliegende Verfahren. Die bevorzugten Gase sind jedoch halogenierte Gase einschließlich Dimethyldichlorsilan, Methyltrichlorisilan, Trimethylmonochlorsilan und ein Gemisch aus Methan- und Siliziumtetrachlorid. Als Trägergas wird Wasserstoff vorgezogen und der Temperaturbereich für die Zersetzung kann bekanntlich zwischen etwa 1650 und 2000° C schwanken.All gases previously used for the manufacture of silicon carbide thermal decomposition of gases are known, are suitable for the present process. However, the preferred gases are halogenated gases including dimethyldichlorosilane, Methyltrichlorosilane, trimethylmonochlorosilane and a mixture of methane and silicon tetrachloride. Hydrogen is preferred as the carrier gas and the temperature range for the decomposition is known to fluctuate between about 1650 and 2000 ° C.
In einem für den Zersetzungsprozeß spezifischen Beispiel wurde ein Einkristall-Saphirsubstrat in einer Reaktionskammer auf eine Temperatur von 1700° C erhitzt. Während 30 Minuten und bei Atmosphärendruck wurde ein Gasgemisch aus 71 pro Minute Hz und 50 cms/Min. (CH.), SiClz über das erhitzte Substrat geleitet. Auf dem Substrat bildeten sich durchsichtiges, gelbes 13-Siliziumkarbid in Form orientierter Einkristalle.In an example specific to the decomposition process, a Single crystal sapphire substrate in a reaction chamber to a temperature of 1700 ° C heated. A mixture of gases evolved over 30 minutes at atmospheric pressure 71 per minute Hz and 50 cms / min. (CH.), SiCl2 passed over the heated substrate. Clear, yellow 13-silicon carbide formed in shape on the substrate oriented single crystals.
Temperaturschwankungen zwischen 1650 und 2000° C hatten keine merkbaren Auswirkungen auf das Verfahren. Bei einer Temperatur unterhalb von 1650° C bildete sich polykristallines Siliziumkarbid. Die obere Grenze von 2000° C nähert sich dem Schmelzpunkt des Saphirsubstrates an und hat augenscheinlich eine nachteilige Auswirkung auf das Gittergefüge des Substrates.Temperature fluctuations between 1650 and 2000 ° C had no noticeable Effects on the process. Formed at a temperature below 1650 ° C polycrystalline silicon carbide. The upper limit of 2000 ° C approaches that Melting point of the sapphire substrate and apparently has an adverse effect on the lattice structure of the substrate.
Ähnliche Ergebnisse wurden erzielt, wenn man statt des Dimethyldichlorsilans unter den gleichen Bedingungen Monomethyltrichlorsilan, Trimethylomonochlorsilan oder ein 1 :1-Gemisch aus Methan und Siliziumtetrachlorid verwendet.Similar results were obtained if instead of dimethyldichlorosilane under the same conditions monomethyltrichlorosilane, trimethylomonochlorosilane or a 1: 1 mixture of methane and silicon tetrachloride is used.
Gegebenenfalls kann der Siliziumkarbidkristall auch zur Bildung von n-Typ, p-Typ oder p-n-Grenzschichten dotiert werden, wozu man der in die Reaktionskammer eingeleiteten Gasströmung bekannte gasförmige Dotierungsmittel zusetzt. Nach der Bildung der gewünschten p-n-Grenzschichten in den Kristallen können zur Bildung von aktiven Halbleitervorrichtungen Leitungsdrähte an den verschiedenen Teilen des Kristalls angebracht werden. Das Saphirsubstrat wirkt wie ein elektrischer Isolator, so daß sich auf dem Substrat mit konventionellen Abdeck- und Auftrageverfahren monolythische Schaltungen ausbilden lassen. Da der Saphir auch eine weit höhere Temperaturbeständigkeit als konventionelle monolythische Schaltungssubtrate hat, kann die fertige Schaltung in Umgebungen mit hoher Temperatur verwendet werden. Alternativ können die Siliziumkarbidkristalle von dem Substrat durch Wegätzen des Substrates mit geeigneten Ätzmitteln gelöst werden. Die Kristalle werden dann zur Herstellung von Vorrichtungen oder Schaltungen verwendet, die vom Substrat unabhängige Einheiten bilden.Optionally, the silicon carbide crystal can also be used to form n-type, p-type or p-n boundary layers are doped, for which purpose the in the reaction chamber introduced gas flow adds known gaseous dopants. After Formation of the desired p-n interfaces in the crystals can lead to formation of active semiconductor devices lead wires to the various parts of the Crystal to be attached. The sapphire substrate acts like an electrical insulator, so that monolithic Let circuits train. Because the sapphire also has a much higher temperature resistance than conventional monolithic circuit substrates, the finished circuit can used in high temperature environments. Alternatively, the silicon carbide crystals detached from the substrate by etching away the substrate with suitable etchants will. The crystals are then used for manufacture of fixtures or circuits are used which form units independent of the substrate.
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48334065A | 1965-08-27 | 1965-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1282621B true DE1282621B (en) | 1969-09-11 |
Family
ID=23919666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DED50644A Pending DE1282621B (en) | 1965-08-27 | 1966-07-21 | Process for producing, in particular, monocrystalline silicon carbide |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3463666A (en) |
| CH (1) | CH480869A (en) |
| DE (1) | DE1282621B (en) |
| GB (1) | GB1115237A (en) |
| NL (1) | NL6612035A (en) |
| SE (1) | SE309969B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200157A (en) * | 1986-02-17 | 1993-04-06 | Toshiba Ceramics Co., Ltd. | Susceptor for vapor-growth deposition |
| DE4121798A1 (en) * | 1991-07-02 | 1993-01-14 | Daimler Benz Ag | MULTILAYERED MONOCRISTALLINE SILICON CARBIDE COMPOSITION |
| JP3296998B2 (en) * | 1997-05-23 | 2002-07-02 | 日本ピラー工業株式会社 | Single crystal SiC and method for producing the same |
| US8541769B2 (en) | 2010-11-09 | 2013-09-24 | International Business Machines Corporation | Formation of a graphene layer on a large substrate |
| US20120112198A1 (en) * | 2010-11-09 | 2012-05-10 | International Business Machines Corporation | Epitaxial growth of silicon carbide on sapphire |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1047180B (en) * | 1958-04-03 | 1958-12-24 | Wacker Chemie Gmbh | Process for the production of very pure crystalline silicon carbide |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2962388A (en) * | 1954-03-12 | 1960-11-29 | Metallgesellschaft Ag | Process for the production of titanium carbide coatings |
| DE1061593B (en) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Device for obtaining the purest semiconductor material for electrotechnical purposes |
| GB888844A (en) * | 1957-08-28 | 1962-02-07 | Paul August Franz Baumert | Process for obtaining fluorine compounds |
| NL244520A (en) * | 1958-10-23 | |||
| US3011912A (en) * | 1959-12-22 | 1961-12-05 | Union Carbide Corp | Process for depositing beta silicon carbide |
-
1965
- 1965-08-27 US US483340A patent/US3463666A/en not_active Expired - Lifetime
-
1966
- 1966-07-21 DE DED50644A patent/DE1282621B/en active Pending
- 1966-08-02 SE SE10514/66A patent/SE309969B/xx unknown
- 1966-08-16 GB GB36643/66A patent/GB1115237A/en not_active Expired
- 1966-08-26 NL NL6612035A patent/NL6612035A/xx unknown
- 1966-08-26 CH CH1237266A patent/CH480869A/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1047180B (en) * | 1958-04-03 | 1958-12-24 | Wacker Chemie Gmbh | Process for the production of very pure crystalline silicon carbide |
Also Published As
| Publication number | Publication date |
|---|---|
| SE309969B (en) | 1969-04-14 |
| US3463666A (en) | 1969-08-26 |
| GB1115237A (en) | 1968-05-29 |
| NL6612035A (en) | 1967-02-28 |
| CH480869A (en) | 1969-11-15 |
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