DE1280917B - Circuit arrangement in a television receiver with transistorized line output stage - Google Patents
Circuit arrangement in a television receiver with transistorized line output stageInfo
- Publication number
- DE1280917B DE1280917B DE1967M0076358 DEM0076358A DE1280917B DE 1280917 B DE1280917 B DE 1280917B DE 1967M0076358 DE1967M0076358 DE 1967M0076358 DE M0076358 A DEM0076358 A DE M0076358A DE 1280917 B DE1280917 B DE 1280917B
- Authority
- DE
- Germany
- Prior art keywords
- circuit arrangement
- transistor
- output stage
- line output
- television receiver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/085—Protection of sawtooth generators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
- H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
- H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
- H04N3/18—Generation of supply voltages, in combination with electron beam deflecting
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Picture Signal Circuits (AREA)
- Amplifiers (AREA)
Description
Schaltungsanordnung bei einem Fernsehempfangsgerät mit transistorisierter Zeilenendstufe Die Erfindung betrifft eine Schaltungsanordnung bei einem Fernsehempfangsgerät oder bei ähnlichen Geräten mit einem in der Zeilenendstufe vorgesehenen Transistor kurzer Abschaltzeit, die kleiner als 0,5 Mikrosekunden ist.Circuit arrangement in a television receiver with transistorized Line output stage The invention relates to a circuit arrangement in a television receiver or with similar devices with a transistor provided in the line output stage short switch-off time that is less than 0.5 microseconds.
Man kennt bereits Schaltungen mit in der Zeilenendstufe vorgesehenen Transistoren mit langer Abschaltzeit, bei denen zur Verringerung dieser Zeit RC-Glieder vorgeschaltet sind. Diese RC-Glieder wirken mit Induktivitäten zusammen, wobei die Zeitkonstante so gewählt ist, daß eine Differentiation des Rechteck-Steuerimpulses entsteht, um die Vorderflanke zu versteilern und anzuheben.Circuits with provided in the line output stage are already known Transistors with long switch-off times, in which RC elements are used to reduce this time are connected upstream. These RC elements work together with inductors, the Time constant is chosen so that a differentiation of the square-wave control pulse arises to steepen and lift the leading edge.
Bei in der Zeilenendstufe vorgesehenen Silizium-Transistoren, welche selbst bereits kurze Abschaltzeiten von kleiner als 0,5 Mikrosekunden aufweisen, sind derartige Schutzmaßnahmen nicht erforderlich. Dabei geht es vielmehr darum, eventuell auftretende Störspitzen bzw. induzierte Störspannungen aus dem Aussteuerbereich dieser Transistoren während der nichtleitenden Phase herauszuhalten.In the case of silicon transistors provided in the line output stage, which even have short switch-off times of less than 0.5 microseconds, such protective measures are not required. Rather, it is about Possible interference peaks or induced interference voltages from the modulation range to keep these transistors out during the non-conductive phase.
Diese Aufgabe wird gemäß der Erfindung dadurch gelöst, daß zum Schutz des Transistors gegen durch induzierte Spannungsspitzen ausgelöste Durchbrüche an seinen Emitter eine feste positive Vorspannung oder an seine Basis eine feste negative Vorspannung gelegt ist, wodurch die effektiv wirksame Durchbruchsspannung des Transistors erhöht wird bzw. die Auswirkungen von Störspannungsspitzen unterdrückt werden. Die Impulsflanke bleibt dabei unberücksichtigt.This object is achieved according to the invention in that for protection of the transistor against breakdowns triggered by induced voltage peaks a fixed positive bias voltage on its emitter or a negative voltage on its base Bias voltage is applied, thereby reducing the effective breakdown voltage of the transistor is increased or the effects of interference voltage peaks are suppressed. the The pulse edge is not taken into account.
Zur Erzeugung der negativen Vorspannung wird erfindungsgemäß vorgeschlagen, der Basis des Transistors ein RC-Glied vorzuschalten, dessen Zeitkonstante so hoch gewählt wird, daß praktisch eine konstante Spannung entsteht.To generate the negative bias, it is proposed according to the invention that to connect an RC element upstream of the base of the transistor, the time constant of which is so high is chosen that practically a constant voltage arises.
Zur Erzeugung der positiven Vorspannung wird weiter vorgeschlagen, dem Emitter des Transistors ein RC-Glied vorzuschalten, dessen Zeitkonstante ebenfalls so bemessen ist, daß eine konstante Vorspannung entsteht.To generate the positive bias, it is further proposed that to connect an RC element upstream of the emitter of the transistor, its time constant as well is dimensioned so that a constant preload is created.
Die Erfindung ist in drei Ausführungsbeispielen in den Zeichnungen schematisch dargestellt. Die F i g. 1 bis 3 zeigen jeweils die Schaltbilder der Zeilenendstufen bei Fernsehempfangsgeräten, bei denen gemäß der Erfindung der Basis des Endstufentransistors 1 eine negative Vorspannung zugeführt wird.The invention is shown schematically in three exemplary embodiments in the drawings. The F i g. 1 to 3 each show the circuit diagrams of the line output stages in television receivers in which, according to the invention, the base of the output stage transistor 1 is supplied with a negative bias voltage.
In F i g. 1 erfolgt dies dadurch, daß an dem dem Endstufentransistor 1 vorgeschalteten Transformator 2 eine von außen kommende negative Vorspannung 3 angelegt ist.In Fig. 1, this takes place in that a negative bias voltage 3 coming from outside is applied to the transformer 2 connected upstream of the output stage transistor 1.
In F i g. 2 wird die negative Vorspannung durch ein RC-Glied 3, 4 erzeugt, welches der Basis des Transistors 1 vorgeschaltet ist.In Fig. 2, the negative bias voltage is generated by an RC element 3, 4 , which is connected upstream of the base of the transistor 1.
In F i g. 3 wird der gleiche Effekt erfindungsgemäß dadurch erzielt, daß ein RC-Glied 3, 4 dem Emitter des Transistors 1 vorgeschaltet und dadurch eine positive Vorspannung erzeugt wird.In Fig. 3, the same effect is achieved according to the invention in that an RC element 3, 4 is connected upstream of the emitter of the transistor 1 and a positive bias voltage is thereby generated.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1967M0076358 DE1280917B (en) | 1967-11-24 | 1967-11-24 | Circuit arrangement in a television receiver with transistorized line output stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1967M0076358 DE1280917B (en) | 1967-11-24 | 1967-11-24 | Circuit arrangement in a television receiver with transistorized line output stage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1280917B true DE1280917B (en) | 1968-10-24 |
Family
ID=7316969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1967M0076358 Pending DE1280917B (en) | 1967-11-24 | 1967-11-24 | Circuit arrangement in a television receiver with transistorized line output stage |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1280917B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1248097B (en) * | 1962-12-19 | 1967-08-24 | Radio Corporation of America New York, NY (V St A) | Deflection circuit equipped with transistors for electromagnetic beam deflection in cathode ray tubes |
-
1967
- 1967-11-24 DE DE1967M0076358 patent/DE1280917B/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1248097B (en) * | 1962-12-19 | 1967-08-24 | Radio Corporation of America New York, NY (V St A) | Deflection circuit equipped with transistors for electromagnetic beam deflection in cathode ray tubes |
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