DE112011102856B4 - Anordnung - Google Patents
Anordnung Download PDFInfo
- Publication number
- DE112011102856B4 DE112011102856B4 DE112011102856.3T DE112011102856T DE112011102856B4 DE 112011102856 B4 DE112011102856 B4 DE 112011102856B4 DE 112011102856 T DE112011102856 T DE 112011102856T DE 112011102856 B4 DE112011102856 B4 DE 112011102856B4
- Authority
- DE
- Germany
- Prior art keywords
- precursor
- nozzle head
- cylindrical
- substrate
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002243 precursor Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000006557 surface reaction Methods 0.000 claims abstract description 7
- 238000010926 purge Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 31
- 230000033001 locomotion Effects 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20105902 | 2010-08-30 | ||
| FI20105902A FI20105902A0 (sv) | 2010-08-30 | 2010-08-30 | Anordning |
| PCT/FI2011/050747 WO2012028779A1 (en) | 2010-08-30 | 2011-08-29 | Apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112011102856T5 DE112011102856T5 (de) | 2013-08-08 |
| DE112011102856B4 true DE112011102856B4 (de) | 2023-03-23 |
Family
ID=42669406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112011102856.3T Active DE112011102856B4 (de) | 2010-08-30 | 2011-08-29 | Anordnung |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN103080374B (sv) |
| DE (1) | DE112011102856B4 (sv) |
| FI (1) | FI20105902A0 (sv) |
| TW (1) | TW201219117A (sv) |
| WO (1) | WO2012028779A1 (sv) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI125341B (sv) * | 2012-07-09 | 2015-08-31 | Beneq Oy | Apparatur och metod för processing av substrat |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5704983A (en) | 1992-05-28 | 1998-01-06 | Polar Materials Inc. | Methods and apparatus for depositing barrier coatings |
| EP1884472A1 (en) | 2005-05-27 | 2008-02-06 | Kirin Beer Kabushiki Kaisha | Apparatus for manufacturing gas barrier plastic container, method for manufacturing the container, and the container |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4597986A (en) * | 1984-07-31 | 1986-07-01 | Hughes Aircraft Company | Method for photochemical vapor deposition |
| JP3103186B2 (ja) * | 1992-03-19 | 2000-10-23 | 富士通株式会社 | 原子層エピタキシー装置および原子層エピタキシー法 |
| JP2004014953A (ja) * | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | 処理装置および処理方法 |
| US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
| WO2006087893A1 (ja) * | 2005-02-17 | 2006-08-24 | Hitachi Kokusai Electric Inc. | 基板処理方法および基板処理装置 |
| KR20060103640A (ko) * | 2005-03-28 | 2006-10-04 | 삼성전자주식회사 | 반도체 제조장치 |
| JP2007111678A (ja) * | 2005-10-24 | 2007-05-10 | Sekisui Chem Co Ltd | 線状被処理物用プラズマ処理装置 |
| CN101589171A (zh) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | 用于大面积多层原子层化学气相处理薄膜的装置和方法 |
| US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
| JP2010073822A (ja) * | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
| US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
-
2010
- 2010-08-30 FI FI20105902A patent/FI20105902A0/sv not_active Application Discontinuation
-
2011
- 2011-08-29 DE DE112011102856.3T patent/DE112011102856B4/de active Active
- 2011-08-29 WO PCT/FI2011/050747 patent/WO2012028779A1/en not_active Ceased
- 2011-08-29 CN CN201180041762.0A patent/CN103080374B/zh active Active
- 2011-08-29 TW TW100130878A patent/TW201219117A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5704983A (en) | 1992-05-28 | 1998-01-06 | Polar Materials Inc. | Methods and apparatus for depositing barrier coatings |
| EP1884472A1 (en) | 2005-05-27 | 2008-02-06 | Kirin Beer Kabushiki Kaisha | Apparatus for manufacturing gas barrier plastic container, method for manufacturing the container, and the container |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012028779A1 (en) | 2012-03-08 |
| TW201219117A (en) | 2012-05-16 |
| DE112011102856T5 (de) | 2013-08-08 |
| CN103080374B (zh) | 2016-04-13 |
| CN103080374A (zh) | 2013-05-01 |
| FI20105902A0 (sv) | 2010-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R082 | Change of representative |
Representative=s name: TBK, DE |
|
| R081 | Change of applicant/patentee |
Owner name: BENEQ OY, FI Free format text: FORMER OWNER: BENEQ GROUP OY, ESPOO, FI Owner name: BENEQ OY, FI Free format text: FORMER OWNER: BENEQ OY, ESPOO, FI Owner name: BENEQ OY, FI Free format text: FORMER OWNER: BENEQ OY, VANTAA, FI |
|
| R016 | Response to examination communication | ||
| R018 | Grant decision by examination section/examining division | ||
| R020 | Patent grant now final |