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DE1179591B - Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator - Google Patents

Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator

Info

Publication number
DE1179591B
DE1179591B DES83489A DES0083489A DE1179591B DE 1179591 B DE1179591 B DE 1179591B DE S83489 A DES83489 A DE S83489A DE S0083489 A DES0083489 A DE S0083489A DE 1179591 B DE1179591 B DE 1179591B
Authority
DE
Germany
Prior art keywords
magnetic field
circuit
dependent
transistor
keying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES83489A
Other languages
German (de)
Inventor
Dr Herbert Weiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES83489A priority Critical patent/DE1179591B/en
Priority to US331870A priority patent/US3315142A/en
Priority to GB1872/64A priority patent/GB1045543A/en
Publication of DE1179591B publication Critical patent/DE1179591B/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/945Proximity switches
    • H03K17/95Proximity switches using a magnetic detector
    • H03K17/9517Proximity switches using a magnetic detector using galvanomagnetic devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1296Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/78Generating a single train of pulses having a predetermined pattern, e.g. a predetermined number

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Magnetic Bearings And Hydrostatic Bearings (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Description

Magnetfeldabhängige Anordnung zum Tasten eines Signalgebers unter Verwendung eines Transistoroszillators Zum Anregen von Schnellschaltern, z. B. zur präzisen schnellen und selbsttätigen Steuerung von Werkzeugmaschinen, Walzwerken usw., sind Schalthandlungen vorzunehmen, an die im Zuge der fortschreitenden Automation fortwährend gesteigerte Anforderungen gestellt werden. Diese Schalter müssen in überaus kurzer Zeit sicher auf kleinste Steuerleistungen reagieren und an die jeweils nachgeschaltete Regelungsanordnung ein Meldesignal liefern. Diese Anforderungen sind mit mechanischen Schaltelementen nur schwer zu erfüllen. Die Schaltzeiten dieser Elemente sind im allgemeinen so groß, daß z. B. die Regelgeschwindigkeit einer Halbleitersteuerung durch das Anregeglied zu sehr beeinträchtigt würde.Magnetic field-dependent arrangement for keying a signal generator below Use of a transistor oscillator To excite high-speed switches, e.g. B. to precise, fast and automatic control of machine tools, rolling mills etc., switching operations are to be carried out in the course of advancing automation continuously increasing demands are made. These switches must be in React safely to the smallest tax payments in an extremely short time and to the respective downstream control arrangement deliver a message signal. These requirements are difficult to achieve with mechanical switching elements. The switching times of these Elements are generally so large that e.g. B. the control speed of a semiconductor controller would be affected too much by the stimulating member.

Die Erfindung bezieht sich auf eine magnetfeldabhängige Anordnung zum Tasten eines Signalgebers, wobei ein Transistoroszillator verwendet wird, mit dessen Laststromkreis ein die Signalspannung erregender Schwingkreis in Reihe liegt und dessen Steuerstromkreis an den Schwingkreis rückgekoppelt ist. Erfindungsgemäß liegt im Rückkopplungskreis ein magnetfeldabhängiger Widerstand, dessen Widerstandswert bei einer magnetischen Erregung die Anschwingbedingung erfüllt.The invention relates to a magnetic field-dependent arrangement for keying a signal generator using a transistor oscillator with whose load circuit is an oscillating circuit which excites the signal voltage and whose control circuit is fed back to the resonant circuit. According to the invention there is a magnetic field-dependent resistor in the feedback circuit, its resistance value in the case of magnetic excitation, the oscillation condition is met.

Die Kombination eines magnetfeldabhängigen Widerstandes in Verbindung mit einem Oszillatorschwingkreis stellt einen Schalter dar, der - bedingt durch die Oszillatorfrequenz - sehr schnell ein- bzw. ausschaltet (., 10-4 Sekunden bei 30 kHz) und der kontaktlos durch einen Eisenkern, durch einen Magneten bzw. durch kleine Strom- oder Spannungsänderungen angeregt werden kann.The combination of a magnetic field-dependent resistor in connection with an oscillator circuit represents a switch that - due to the oscillator frequency - switches on or off very quickly (., 10-4 seconds at 30 kHz) and the contactless by an iron core, by a magnet or by small changes in current or voltage can be excited.

Im folgenden wird das in der F i g. 1 dargestellte Ausführungsbeispiel näher beschrieben.In the following, this is shown in FIG. 1 illustrated embodiment described in more detail.

An einer Gleichspannungsquelle liegt die Primärwicklung n1 eines Transformators TR in Reihe mit dem Laststromkreis (Kollektor-Emitter) eines Transistors T und mit dem Widerstand R4, dem der Kondensator C2 parallel geschaltet ist. Parallel zur Primärwicklung n, des Transformators TR liegt der Schwingkreiskondensator C3. Der Transformator TR besitzt außerdem zwei weitere Wicklungen, eine Rückkopplungswicklung n2 und eine Ausgangswicklung n3. Die Rückkopplungswicklung n2 hat eine Anzapfung, die mit dem Steueranschluß des Transistors T (Basis) unmittelbar verbunden ist. Ein Ende der Sekundärwicklung ist über den Widerstand R3, das andere über den magnetfeldabhängigen Widerstand RF mit einer Klemme A konstanten Potentials verbunden. Diese Klemme A ist an den Mittelabgriff zweier in Reihe geschalteter Widerstände R1 und R2 angeschlossen, die gleichfalls an der Gleichspannungsquelle liegen. Außerdem ist dem Widerstand R3, der an den gleichen Leiter herangeführt ist wie der Widerstand R4, ein Kondensator Cl als Wechselspannungskurzschlußglied parallel geschaltet. Die Ausgangswicklung n3 des Transformators TR ist über zwei Gleichrichter Dl und D, in Mittelpunktschaltung an die Ausgangsklemmen angeschlossen. Diese Klemmen sind zur Spannungsglättung über den Kondensator C4 verbunden.The primary winding n1 of a transformer is connected to a DC voltage source TR in series with the load circuit (collector-emitter) of a transistor T and with the resistor R4 to which the capacitor C2 is connected in parallel. Parallel to Primary winding n of the transformer TR is the resonant circuit capacitor C3. Of the Transformer TR also has two additional windings, a feedback winding n2 and an output winding n3. The feedback winding n2 has a tap, which is directly connected to the control terminal of the transistor T (base). One end of the secondary winding is via the resistor R3, the other via the magnetic field-dependent Resistor RF connected to a terminal A of constant potential. This clamp A is connected to the center tap of two series-connected resistors R1 and R2, which are also connected to the DC voltage source. Also, the resistance is there R3, which is brought up to the same conductor as the resistor R4, a capacitor Cl connected in parallel as an alternating voltage short-circuit element. The output winding n3 of the transformer TR is via two rectifiers Dl and D, in the midpoint connection connected to the output terminals. These terminals are over for voltage smoothing connected to capacitor C4.

Die Primärwicklung n1 des Transformators TR stellt mit dem parallel geschalteten Schwingkreiskondensator C3 einen Oszillator-Schwingkreis dar, der eine genügend hohe Schwingfrequenz, z. B. 30 kHz, besitzen möge. Der Transistor T ist über den Abgriff der Rückkopplungswicklung n2 an den Oszillatorschwingkreis rückgekoppelt. Die Rückkopplungsspannung liegt zwischen der Klemme A konstanten Potentials und dem Abgriff der Rückkopplungswicklung n2, der mit dem Steueranschluß des Transistors T (Basis) verbunden ist. Das Potential der Klemme A wird durch entsprechende Wahl der Widerstände R1 und Ra so eingestellt, daß zwischen ihm und dem Steueranschluß des Transistors bei dem gewünschten Transistorstrom und dem dadurch gegebenen Spannungsabfall am Widerstand R4 keine Gleichspannung auftritt. Der Widerstand R3 ist so dimensioniert, daß die Rückkopplungsspannung ux bei dem Grundwiderstand des magnetfeldabhängigen Widerstandes RF Null ist oder eine solche Phasenlage hat, daß der Schwingkreis nicht erregt wird. Gelangt der Widerstand RF in ein Magnetfeld mit wachsender Induktion B, so vergrößert sich sein Widerstandswert. Die Rückkopplungsspannung wird zunächst Null und wächst bei weiterwachsendem Widerstand RF wieder an, hat aber ihre Phasenlage um 180° verändert, da die Ortskurve der Rückkopplungsspannung bei veränderlichem magnetfeldabhängigem Widerstand RF eine durch den Nullpunkt gehende Gerade darstellt. Die um 180° gedrehte Rückkopplungsspannung regt nun den Oszillator-Schwingkreis an. An der Ausgangswicklung n3 des Transformators TR entsteht eine Spannung; diese wird gleichgerichtet und kann als Ausgangssignal an den Ausgangsklemmen abgenommen werden. Als Beispiel für die Dimensionierung seien folgende Werte angegeben: RF . . . . . . . . Feldplatte mit einem Grundwider- stand von etwa 100 Ohm R1 = R2 .... 10 kOhm R3 ......... 100 Ohm R.. . . . . . . . . . 2,4 kOhm Cl ......... 50nF C2 ......... 5 #tF C3 ......... 0 C. . . . . . . . . . 3,3 nF T . . . . . . . . . . Transistor TF 65/30 Dl, DZ ..... Germaniumdioden RL 44 TR . . . . . . . . Transformator mit Siferrit Schalen- kern 23' - 17 aus 1100 N 22 AL . . . . . . . . . 400 nH/Wdg2 n1 . . . . . . . . . 150 Windungen 0,2 mm CuL n2 . . . . . . . . . 2 - 12 Windungen 0,2 mm CuL n3 . . . . .. . . . 2 - 320 Windungen 0,1 mm CuL Bei dieser Bemessung erhält man für die Ausgangsspannung in Abhängigkeit vom Feldplattenwiderstand bei unterschiedlichen Speisespannungen den in F i g. 2 dargestellten Verlauf und für verschiedene Belastungswiderstände Rd an den Ausgangsklemmen ergeben sich die in F i g. 3 bezeichneten Kurven. Wie aus den F i g. 2 und 3 zu ersehen ist, hat diese Schaltungsanordnung die Eigenschaft, daß schon bei sehr kleiner Widerstandsänderung des magnetfeldabhängigen Widerstandes RF der Transistor T voll ausgesteuert wird, so daß - bedingt durch die hohe Schwingfrequenz - die Ausgangsspannung schon nach kürzester Zeit ansteht. Die Kondensatoren Cl und C2 wirken als Kurzschluß für die Wechselspannung.The primary winding n1 of the transformer TR, together with the resonant circuit capacitor C3 connected in parallel, represents an oscillator resonant circuit which has a sufficiently high oscillation frequency, e.g. B. 30 kHz, may have. The transistor T is fed back to the oscillator circuit via the tap on the feedback winding n2. The feedback voltage is between the terminal A of constant potential and the tap of the feedback winding n2, which is connected to the control terminal of the transistor T (base). The potential of the terminal A is set by appropriate selection of the resistors R1 and Ra so that no DC voltage occurs between it and the control terminal of the transistor at the desired transistor current and the resulting voltage drop across the resistor R4. The resistor R3 is dimensioned so that the feedback voltage ux at the basic resistance of the magnetic field-dependent resistor RF is zero or has such a phase position that the resonant circuit is not excited. If the resistance RF gets into a magnetic field with increasing induction B, its resistance value increases. The feedback voltage initially becomes zero and increases again as the resistance RF increases, but has changed its phase position by 180 °, since the locus of the feedback voltage represents a straight line going through the zero point when the resistance RF varies as a function of the magnetic field. The feedback voltage, rotated by 180 °, now stimulates the oscillator circuit. A voltage arises at the output winding n3 of the transformer TR; this is rectified and can be taken as an output signal at the output terminals. The following values are given as an example of the dimensioning: RF. . . . . . . . Field plate with a basic resistance stood by about 100 ohms R1 = R2 .... 10 kOhm R3 ......... 100 ohms R ... . . . . . . . . 2.4 kOhm Cl ......... 50nF C2 ......... 5 #tF C3 ......... 0 C. . . . . . . . . 3.3 nF T. . . . . . . . . . Transistor TF 65/30 Dl, DZ ..... germanium diodes RL 44 TR. . . . . . . . Transformer with siferite shell core 23 ' - 17 made of 1100 N 22 AL. . . . . . . . . 400 nH / turn2 n1. . . . . . . . . 150 turns 0.2 mm copper wire n2. . . . . . . . . 2 - 12 turns 0.2 mm copper wire n3. . . . ... . . 2 - 320 turns 0.1 mm copper wire With this dimensioning, the output voltage is obtained as a function of the field plate resistance with different supply voltages as shown in FIG. 2 and for various load resistances Rd at the output terminals the results in FIG. 3 designated curves. As shown in FIGS. 2 and 3, this circuit arrangement has the property that even with a very small change in resistance of the magnetic field-dependent resistor RF, the transistor T is fully controlled so that - due to the high oscillation frequency - the output voltage is available after a very short time. The capacitors C1 and C2 act as a short circuit for the alternating voltage.

Claims (3)

Patentansprüche: 1. Magnetfeldabhängige Anordnung zum Tasten eines Signalgebers unter Verwendung eines Transistoroszillators, mit dessen Laststromkreis ein die Signalspannung erregender Schwingkreis in Reihe liegt und dessen Steuerstromkreis an den Schwingkreis rückgekoppelt ist, d a d u r c h g e k e n n -z e i c h n e t, daß im Rückkopplungskreis ein magnetfeldabhängiger Widerstand liegt, dessen Widerstandswert bei einer magnetischen Erregung die Anschwingbedingung erfüllt. Claims: 1. Magnetic field-dependent arrangement for keying a Signal generator using a transistor oscillator with its load circuit an oscillating circuit which excites the signal voltage is in series and its control circuit is fed back to the resonant circuit, that is to say t that there is a magnetic field-dependent resistor in the feedback circuit, its resistance value in the case of magnetic excitation, the oscillation condition is met. 2. Magnetfeldabhängige Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß auf dem Kern der Induktivität des Oszillatorschwingkreises (Primärwicklung n1) eine angezapfte Rückkopplungswicklung angeordnet ist, deren Anzapfung mit dem Steueranschluß des Transistors verbunden ist und deren Enden über Widerstände - von denen mindestens einer magnetfeldabhängig ist -an eine Klemme konstanten Potentials angeschlossen sind. 2. Magnetic field dependent Arrangement according to claim 1, characterized in that on the core of the inductance of the oscillator circuit (primary winding n1) a tapped feedback winding is arranged, whose tap is connected to the control terminal of the transistor and their ends via resistors - at least one of which is dependent on the magnetic field is connected to a terminal of constant potential. 3. Magnetfeldabhängige Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß auf dem Kern der Induktivität eine Ausgangswicklung angeordnet ist, die über Gleichrichter mit den Ausgangsklemmen des Signalgebers verbunden ist. In Betracht gezogene Druckschriften: Deutsche Auslegeschriften Nr. 1 103 966, 1 117 l68.3. Magnetic field-dependent arrangement according to claim 1, characterized in that an output winding is arranged on the core of the inductance, which is connected via a rectifier to the output terminals of the signal generator. Publications considered: German Auslegeschriften No. 1 103 966, 1 117 l68.
DES83489A 1963-01-30 1963-01-30 Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator Pending DE1179591B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DES83489A DE1179591B (en) 1963-01-30 1963-01-30 Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator
US331870A US3315142A (en) 1963-01-30 1963-12-19 Magnetic-field dependence signal transmitter or signaller
GB1872/64A GB1045543A (en) 1963-01-30 1964-01-15 A signal generator operable in dependence upon a magnetic field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES83489A DE1179591B (en) 1963-01-30 1963-01-30 Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator

Publications (1)

Publication Number Publication Date
DE1179591B true DE1179591B (en) 1964-10-15

Family

ID=7511073

Family Applications (1)

Application Number Title Priority Date Filing Date
DES83489A Pending DE1179591B (en) 1963-01-30 1963-01-30 Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator

Country Status (3)

Country Link
US (1) US3315142A (en)
DE (1) DE1179591B (en)
GB (1) GB1045543A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3732443A (en) * 1971-05-12 1973-05-08 Renko Ass On-off detection device
DE102010043010C5 (en) 2010-10-27 2017-10-05 Ifm Electronic Gmbh Inductive proximity switch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1103966B (en) * 1958-07-08 1961-04-06 Asea Ab Logical element
DE1117168B (en) * 1957-01-17 1961-11-16 Telefunken Patent Transistor relay circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2894234A (en) * 1959-07-07 Electric variable resistance devices
US3021514A (en) * 1958-03-27 1962-02-13 Itt Voltage comparator
US3034023A (en) * 1959-06-15 1962-05-08 Gen Electric Low cost controller

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1117168B (en) * 1957-01-17 1961-11-16 Telefunken Patent Transistor relay circuit
DE1103966B (en) * 1958-07-08 1961-04-06 Asea Ab Logical element

Also Published As

Publication number Publication date
GB1045543A (en) 1966-10-12
US3315142A (en) 1967-04-18

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