DE1174410B - Electric semiconductor device - Google Patents

Description

FEDERAL REPUBLIC OF GERMANY

GERMAN

PATENT OFFICE

EDITORIAL

Boarding school Kl .: HOIc

German KI .: 21c-54/05

Number: 1174 410

File number: S 63810 VIII d / 21 c

Filing date: July 8, 1959

Opened on: July 23, 1964

Semiconductor arrangements are known which are based on the change in electrical resistance which a semiconductor body experiences under the action of a magnetic field. In the past, germanium bodies were preferably used as semiconductor bodies. Recently, such arrangements with semiconductor bodies made of semiconducting compounds of type A ¹¹¹ B ^v with a carrier mobility of at least 6000 cmWsec, z. B. made of InSb or InAs. At another point, solutions for the geometric design of the semiconductor bodies for such devices have been proposed in order to achieve the greatest possible change in resistance. A disk-shaped design of the semiconductor body, for example with a central electrode and an edge electrode, is described there as being particularly favorable.

Furthermore, the structure of an amplifier element has been described in which on one of the two End faces of the pot core jacket of a pot magnet have a galvanically applied ring-shaped Control layer is specified. This control layer is not self-contained, but has one Slot open. This arrangement utilizes a magnetic resistance effect similar to that of infinity long rod and which has recently been referred to as the "physical change in resistance" will. In contrast to this, an effect is used in the semiconductor arrangement according to the invention, which is referred to as the "geometric change in resistance".

Farner has become known a semiconductor component, whose electrical resistance is a function of the current flowing through it. The resistance this arrangement is controlled by the Gaussian effect in the semiconductor, which is caused by the effect on the semiconductor Feedback magnetic field caused by the current flowing through the arrangement is generated and determined.

The invention relates to an electrical semiconductor device based on the change of the electrical Resistance is based, which is arranged in the air gap of an iron magnet, dependent on the magnetic field Semiconductor bodies under the effect of the magnetic field learns. The invention consists in that an annularly closed semiconductor body is used, whose ring-shaped closed electrodes are arranged on the two end faces of the semiconductor body are, and that the geometric shape of the air gap of the magnetic excitation system of the geometric shape of the semiconductor body is adapted. The semiconductor body can, for. B. tubular or funnel-shaped be and in one main direction an electrical semiconductor device

Applicant:

Siemens-Schuckertwerke Aktiengesellschaft,

Berlin and Erlangen,

Erlangen, Werner-von-Siemens-Str. 50

Named as inventor:

Dr. Heinrich Welker, Erlangen,

Dr. Herbert Weiß, Nuremberg

Claimed priority:

V. St. v. America 9 September 1958

(760002)

have circular, rectangular or trapezoidal cross-section.

The solution according to the invention has a particularly favorable effect if semiconducting compounds or mixed crystals with a carrier mobility of at least 6000 cmWsec are used as the semiconductor material. ^{Semiconducting compounds of type A In} B ^v , for example InSb or InAs, or semiconducting mixed crystals of A ⁱⁿ B ^v compounds, for example the mixed crystal In (As ^ P _{1. Y} ) with l>y> 0, are particularly recommended for this. Semiconductor materials of this type have been repeatedly described in the recent literature.

To further explain the invention, reference is made to the drawing; it shows
1 shows an embodiment of the semiconductor arrangement according to the invention,

F i g. 2 to 4 examples of embodiments of the semiconductor body according to the invention,

F i g. 5 shows the shape of the semiconductor body according to FIG. 3 adapted magnetic excitation system.

In Fig. 1, 1 to 3 are the iron parts of the magnetic excitation system designated; 1 means a cup-shaped base body, which are two poles formed by the plate 2 and the cylindrical part 3. In the air gap 4, a tubular semiconductor body 5 is arranged between the parts 2 and 3. on Part 3 is the excitation coil 6 with the connection

■■■ i - '>■' · - ■ "- ■" ^:] ~ 409637/369

sen 7 and 8 attached. The connection electrodes of the semiconductor body are at 9 and 10 and their connections indicated at 11 and 12. The geometric shape of the air gap is the geometric shape of the semiconductor body, which in cross section in FIG. 2 is adapted.

Further examples of geometric embodiments of the semiconductor body within the meaning of the invention are in Fig. 3 and 4 shown. The symbols apply as in FIGS. 1 and 2. The semiconductor body according to FIG. 3 can be funnel-shaped, that is, a circular one perpendicular to the illustrated cutting direction Have cross-section; it can also be designed so that the cross section is perpendicular to the illustrated cutting direction polygonal, z. B. rectangular is.

In Fig. 5 is a of the geometric shape of the semiconductor body according to FIG. 3 adapted excitation system shown. Correspondingly as in FIG. 1 this is designed so that the geometric shape of the air gap the geometric shape of the semiconductor body is closely matched. For the semiconductor body and its electrodes and connections as well as for the excitation coil are the same names as before chosen. The two-part iron system is labeled 21 and 22.

The inventive design of the semiconductor body has the advantage that in addition to a relatively large resistance effect a large range of variation with regard to the permissible current and voltage load and thus enables a correspondingly large area of application. this is given that with respect to the geometric dimensions of the semiconductor body a large There is room for maneuver and, as a result, the electrical output data in a wide range can be specified. Semiconductor devices with the semiconductor bodies according to the invention also have the advantage that they are able to withstand sudden voltage and current loads and overloads to catch; among other things, they are ideally suited as control and regulating elements of Protection against current and voltage overloads electrical devices.

Claims (8)

Patent claims: 1.Electric semiconductor device based on the change in electrical resistance a magnetic field-dependent semiconductor body arranged in the air gap of an iron magnet undergoes the action of the magnetic field, characterized in that a ring-shaped closed semiconductor body is used, the ring-shaped closed electrodes on the both end faces of the semiconductor body are arranged, and that the geometric shape of the Air gap of the magnetic excitation system is adapted to the geometric shape of the semiconductor body. 2. Semiconductor arrangement according to claim 1, characterized in that a tubular semiconductor body is provided. 3. Semiconductor arrangement according to claim 1, characterized in that a funnel-shaped Semiconductor body is provided. 4. Semiconductor arrangement according to one of the preceding claims, characterized in that that the semiconductor body consists of a semiconducting compound or of a mixed crystal with a carrier mobility of at least 6000 cmWsec is established. 5. Semiconductor arrangement according to claim 4, characterized in that the semiconductor body is made from a semiconducting compound of the A ^{! II} B ^{V type} , preferably InSb or InAs. 6. Semiconductor arrangement according to claim 4, characterized in that the semiconductor is made from a semiconducting mixed crystal of A ^UI B ^V compounds, preferably from the mixed crystal In (As ^ P _{1. Y} ) with l>;y> 0. Considered publications:
U.S. Patent No. 2,536,805;
Austrian Patent No. 186 669;
Electrical transmission archive, 8th year, pp. 217 to 222 (1954). Legacy Patents Considered:
German Patent No. 1,054,543. 1 sheet of drawings 409 637/369 7.64 © Bundesdruckerei Berlin