DE10224201A1 - Semiconductor component used as power metal oxide semiconductor field effect transistor comprises semiconductor body, a channel zone between connecting zones in body, a trench in body, a control electrode and a current path - Google Patents

Abstract

Semiconductor component comprises: a semiconductor body (100) having a first and second connecting zones; a channel zone (20) arranged between the connecting zones; a trench (60) extending into the semiconductor body; a control electrode (40) in the trench and insulated from semiconductor body; and a current path having a pn-junction running between connecting zones and partially into the trench. Semiconductor component comprises: a semiconductor body (100) having a first connecting zone (12, 14) and a second connecting zone (30) of a first conductivity type; a channel zone (20) of a conductivity type complementary to the first type arranged between the connecting zones; a trench (60) extending into the semiconductor body and reaching from the second connecting zone into the first connecting zone; a control electrode (40) arranged in the trench next to the channel zone and insulated from the semiconductor body; and a current path having a pn-junction running between the connecting zones and partially into the trench. An independent claim is also included for a process for the production of the semiconductor component.

Description

The present invention relates to a semiconductor device according to the features the preamble of claim 1 and a semiconductor device according to the characteristics the preamble of claim 6.

Such semiconductor components are for example from the EP 0 746 030 A2 known. This document describes a power MOSFET with a large number of transistor cells of the same structure and a breakdown structure. The known semiconductor component comprises a semiconductor body with a drain zone arranged in the region of the rear side of the semiconductor body, with source zones arranged in the region of the front side of the semiconductor body, a drift zone adjoining the drain zone and between the drift zone and the source zones channel regions / body zones. The drain zone, the drift zone and the source zones are n-doped in the case of an n-conducting MOSFET, the channel zones being p-doped. The semiconductor component has a multiplicity of trenches, in each of which gate electrodes are arranged, which are insulated from the semiconductor body and which in each case extend adjacent to the channel zones from the source zones to the drift zone.

The breakthrough structure is with that semiconductor device according to the invention formed in that a p-doped zone is provided, which extending from the front of the semiconductor body to below the trenches, so that in the case of an n-conducting MOSFET, this is p-doped Zone and the drift zone or the drain zone, a diode is formed, the anode of this diode being formed by the p-doped zone and is short-circuited to the source zones of the MOSFET.

Aim in developing such Power MOSFET is a low on-resistance to achieve with a high breakdown strength (avalance strength). As a rule, a low specific on-resistance bought with a slightly lower breakdown strength, whereas Components with a good breakdown strength are usually poorer specific ON resistances exhibit.

The aim of the present invention is es, a semiconductor component, in particular one using a field effect controllable semiconductor device, which is available with regard the coordination of the specific switch-on resistance to the breakdown strength is optimized.

This goal is achieved through a semiconductor device according to the characteristics of claim 1 and by a semiconductor device according to the features of claim 6 achieved. Advantageous embodiments of the invention are the subject of the subclaims.

The semiconductor device according to the invention 1 comprises a semiconductor body with a first connection zone and a second connection zone one first line type, one between the first and second connection zones arranged channel zone of a line type complementary to the first line type and at least one trench extending into the semiconductor body, that from the second connection zone through the channel zone to the first connection zone is sufficient, a control electrode in the trench is arranged which is adjacent to the channel zone and isolated from the Semiconductor body is trained. A runs between the first and second connection zones Breakdown current path, which has at least one pn junction and which is reached one adjacent between the first and second connection zones Breakdown voltage conducts, the breakdown current path at least according to the invention partly runs in the trench.

Through the semiconductor device according to the invention is a breakdown current path MSFET, the first and the second connection zone the drain zone or source zone and Channel zone form the channel zone or body zone of the MOSFET. The control electrode forms the gate electrode of the MOSFET. The MOSFET is an n-type MOSFET if the drain zone as well as if applicable to the drain zone subsequent Drift zone and the source zone are n-type and the body zone is p-type.

The realization of the breakdown current path at least partially in the trench allows space-saving Realization of the MOSFET with breakdown current path and secondly, that the breakdown current path is not near the canal. The channel forms in the semiconductor device according to the invention in the canal zone along the trench when a suitable one is created Potential to the gate electrode. This is conductive channel at a breakdown current path formed in the trench one opposite the gate electrode the semiconductor body insulating insulation layer and the gate electrode itself from the breakdown current path. By separating the breakdown current path and channel is prevented from charge carrier injection into the channel area and in the gate insulation layer, which is usually made of an oxide exists, which shifts the threshold voltage of the MOSFET would and there is a risk of switching on a parasitic bipolar transistor, which too a destruction lead of the component could.

The breakdown current path partially in the trench is realized in one embodiment of the semiconductor component according to the invention in that an electrode is arranged in the trench, which is electrically conductively connected to the source zone, which is electrically insulated from the control electrode and which is located at the bottom of the contact hole connects to the semiconductor body, the semiconductor body having a doped zone of the second conductivity type in this connection region. The electrode formed in the trench and insulated from the control electrode by means of an insulation layer preferably consists of a metal or a polysilicon. This electrode contacts the zone of the second conductivity type which is formed below the trench and which is formed in the drain zone or drift zone. This zone of the second conductivity type forms a pn junction with the drift zone or drain zone of the MOSFET, which is a component of the breakdown structure.

In another embodiment is provided the pn junction of the breakthrough structure in the trench. For this is in lower area of the trench adjoining the first connection zone, i.e. the drain zone or drift zone, adjoining material zone, those of the same line type as the first connection zone or source zone, is and the opposite the control electrode is insulated by means of an insulation layer. Connects to this material zone there is a connection electrode of a line type complementary to this material zone connected to the second connection zone in an electrically conductive manner is. Between this connection electrode and the material zone, the complementary are doped, is the pn junction the breakthrough structure.

The connection electrode and the one between it Connection electrode and the first connection zone formed in the trench Material zone preferably consist of polysilicon.

The semiconductor device according to claim 6 comprises a semiconductor body with a front and a back and one in the area of the back trained first connection zone, at least a first and a second trench that is spaced apart in the lateral direction of the semiconductor body and are each in the vertical direction into the semiconductor body extend at least one between the first and second trenches arranged second connection zone and one between the first and second trench and between the first and second connection zones arranged channel zone. The component further comprises at least a third trench with an isolated from the semiconductor body Control electrode, this third trench in the lateral direction is arranged spaced from the first trench. Between the third Trench and the first trench a breakdown current path is formed the distance between the first trench and the third trench in the lateral direction of the semiconductor body is less than that Distance between the first and second trench. By the lesser Distance of the trenches, between which a breakthrough structure is arranged is one particularly space-saving implementation of the component possible.

The breakthrough structure preferably includes a diode structure, one connection through the first connection zone, or drain zone of the semiconductor body is formed.

The present invention is hereinafter described in embodiments explained in more detail with reference to figures. In shows the figures

1 1 shows a section of a first exemplary embodiment of a semiconductor component according to the invention in a perspective illustration,

2 3 shows a cross section through a second exemplary embodiment of a semiconductor component according to the invention,

3 a semiconductor device according to the invention 1 during various process steps of a method for producing the semiconductor component,

4 3 shows a cross section through a first exemplary embodiment of a further semiconductor component according to the invention,

5 a cross section through a second embodiment of the further semiconductor device according to the invention.

Designate in the figures, if not specified otherwise, the same reference numerals have the same parts of equal importance.

1 shows a section of a first embodiment of a semiconductor device according to the invention in a perspective view. The semiconductor component shown realizes an n-type trench MOSFET with a breakdown structure partially arranged in the trench or trenches. The structure according to the invention can of course also be applied to p-type MOSFET, the dopings explained below then having to be interchanged.

The semiconductor component shown comprises a semiconductor body 100 with an n-doped first connection zone 12 . 14 , This first connection zone is in the area of the rear of the semiconductor body 100 more heavily n-doped and forms the drain zone of the MOSFET, while the more heavily doped drain zone 14 a weaker n-doped drift zone 12 followed. The semiconductor body 100 also includes a p-doped channel zone or body zone 20 that adhere to the drift zone 12 connects and that between the drift zone 12 and a heavily n-doped second connection zone formed in the region of the front 30 is trained. The second connection zone 30 forms the source zone of the MOSFET.

Starting from a front 101 several trenches extend 60 , of which in 1 two are shown by the source zone 30 who have favourited Body Zone 20 to the drift zone 12 of the semiconductor body.

In the area of the side walls of the trenches 60 are control electrodes 40 , which together form the gate electrode of the MOSFET, arranged. These gate electrodes 40 are through one Gate insulation layer 50 compared to the semiconductor body 100 isolated and run in the vertical direction of the semiconductor body from the source zone 30 along the body zone 20 up to the drift zone 12 to create an electrically conductive channel in the body zone when a suitable control potential is applied 20 along the side wall of the trench between the source zone 30 and the drift zone 12 to effect.

The semiconductor component comprises a large number of identical transistor structures, so-called cells with source zones 30 , Body zones 20 and gate electrodes 40 , where all cells in the embodiment have a drift zone 12 and a drain zone 14 is common. The source zones 30 All cells are electrically connected to each other to form a common source zone, and the gate electrodes 40 all cells are connected to one another in an electrically conductive manner in order to form a common gate electrode.

This in 1 The semiconductor component shown comprises a breakdown structure with an electrode 80 that in the trench 60 is formed and by means of a further insulation layer 70 opposite the gate electrode 40 is isolated. This electrode 80 extends in the vertical direction over the entire length of the trench and touches at the bottom of the trench 60 the semiconductor body 100 in the area of the drift zone 12 , In this contact area between the electrode 80 and the drift zone 12 is a p-doped zone 90 provided by the electrode 80 is contacted and completely covers the electrode in this area. The p-doped zone 90 and the drift zone 12 or the drain zone 14 form a diode whose circuit symbol in 1 is drawn, and which is poled in the illustrated n-type MOSFET in the source-drain direction in the forward direction or in the drain-source direction in the reverse direction. The breakdown voltage of this diode in the drain-source direction can be achieved by doping the p-doped zone 90 can be set.

The ones in the ditch 60 arranged electrode 80 is with the source zone 30 shorted. The electrode closes 80 in the upper area of the trench directly on the side walls of the trench 60 to the source zone 30 on. The electrode 80 , which preferably consists of a metal or polysilicon, in particular n-doped or p-doped polysilicon, thus simultaneously serves as a connection contact for the source zone 30 so that to contact the source zones 30 immediately this electrode 80 above the trench 60 can be contacted, whereby contact connections above the semiconductor regions arranged between the trenches, the so-called mesa regions, can be dispensed with.

The semiconductor component also includes heavily p-doped body connection regions 22 which, as is evident from the perspective representation in 1 becomes clear, starting from the body zone 20 between sections of the heavily doped source zone 30 to the front 101 extend of the semiconductor body and in the upper region of the trench 60 the electrode 80 contact so that the electrode 80 over the connection areas 22 the p-doped body zone 20 and the n-doped source zone 30 shorts in order to avoid parasitic bipolar effects in a well known manner. On separate contacts in the semiconductor region formed between the trenches, the so-called mesa region, for short-circuiting the source zone 30 and the body zone 20 can be dispensed with in the semiconductor component.

For connecting the body zone 20 to the electrode 80 narrow p-doped zones are sufficient to achieve the short circuit 22 , so that the space required for this is small in the mesa area. By shorting the source zone 30 and the body zone 20 emerging body diode between source 30 and drain 14 is polarized according to the diode of the breakdown structure.

The breakdown voltage of the breakdown structure is set so that it is smaller than that of the body diode. When a positive voltage is applied in the source-drain direction, the majority of the current then flows through the diode of the breakdown structure which is polarized in the forward direction, so that the cross section of the heavily p-doped zones 22 over which the body zone 20 and the source zone 30 are short-circuited, low and can therefore be realized in a space-saving manner. The dimensions of this silicon area between the trenches 60 can be reduced compared to conventional semiconductor components, which contributes to the reduction of the specific on-resistance of the semiconductor component.

The semiconductor component according to the invention functions when a positive drain-source voltage is present and when a gate potential which is positive with respect to source potential is present like a conventional MOSFET, the circuit symbol of which in 1 is drawn. If the MOSFET is blocking, the drain-source voltage exceeds the breakdown voltage of the p-doped zone 90 and drift zone 12 formed diode, a breakdown current flows from one to the drain zone 14 connected drain connection via the drift zone 12 , the p-doped anode zone 90 and the electrode 80 to one to the electrode 80 connected source connection. This breakdown structure works when a voltage is applied in the reverse direction, ie a positive voltage in the source-drain direction, like the body diode and takes over the majority of the current then flowing, so that the connection contact for the body zone 20 can be made small and space-saving.

2 shows a further embodiment of a semiconductor device according to the invention, which differs from that in 1 shown differs in that the pn junction of the breakthrough structure in the trench 60 is arranged. Here There are two semiconductor areas in the trench 81 . 82 trained according to the electrode 80 in 1 by means of an insulation layer 70 opposite the gate electrode 40 are isolated. A semiconductor region arranged in the lower region of the trench 82 is n-doped in the exemplary embodiment and contacts the drift zone 12 , while one above the semiconductor area 82 arranged semiconductor region 81 is p-doped and in the upper region of the trench the source zone 30 contacted.

The semiconductor area 81 contacts according to the electrode 80 in 1 over a body connection zone 22 also the body zone 20 , To short-circuit the source zone 30 with the p-doped zones 22 and thus the body zone 20 in the semiconductor component is preferably an electrode arranged on the semiconductor body 85 provided that in 2 is shown in dashed lines.

The semiconductor areas 81 . 82 are preferably made of polysilicon, a pn junction being implemented between these two semiconductor regions, which is poled in the forward direction in the source-drain direction and in the reverse direction in the drain-source direction. If the drain-source voltage exceeds the breakdown voltage of this pn junction with a blocking MOSFET, a breakdown current flows through the to the drain zone 14 connected drain connection, the drift zone 12 , the n-doped semiconductor region 82 and the p-doped semiconductor region 81 to the source connection S, the semiconductor area 81 and the source zone 30 shorts.

A method for producing a semiconductor component according to the invention 1 is subsequently based on 3 explained in more detail.

3a shows a semiconductor body 100 which is a heavily n-doped zone 12 , the later drain zone, in the area of the back, adjoining the drain zone 12 subsequent weaker n-doped drift zone 14 , one at the drift zone 14 subsequent p-doped zone 20 , the later body zone, as well as an adress to the body zone 20 subsequent heavily n-doped zone, the later source zone 30 , after the first process steps in which trenches 60 starting from the front into the semiconductor body 100 were introduced and in which an insulation layer 50 ' , the later gate insulation layer on the semiconductor body 100 and in the trenches 60 was introduced. A structure according to 3a can be produced using conventional semiconductor technology processes in a well-known manner, so that a detailed explanation can be dispensed with here.

3b shows the structure according to 3a after further process steps, in which gate electrodes 40 were made on the side walls of the trench. These gate electrodes consist, for example, of polysilicon and can be produced, for example, by means of a so-called polyspacer process. For this purpose, a polysilicon layer 40 ' , in the 3b is shown in dashed lines, deposited with at least approximately uniform thickness on the entire arrangement and then etched back, for example by means of an anisotropic etching process, until the polysilicon layer at the bottom of the contact hole 60 and from the front of the semiconductor body, as well as partially from the side walls in the upper region of the trench.

In the next process steps, the result of which is in 3c insulation layers are shown 70 on exposed areas of the gate electrodes 60 generated. For this, either an insulation layer 70 on the gate electrodes 40 deposited or the gate electrodes 40 are subjected to an oxidation process, so that on the gate electrodes 40 a layer of semiconductor oxide is formed. Then the insulation layer 50 from the front 101 of the semiconductor body 100 as well as in the bottom area of the trench 60 away. This can be done, for example, by anisotropic etching, in which the insulating layer 70 is only thinned a little.

3d shows the semiconductor device after the manufacture of the p-doped zones 90 in the drift zone 12 , These p-doped zones 12 are produced, for example, by means of an implantation process and preferably a diffusion or healing process following the implantation process. The production of these p-doped zones can take place immediately after the in 3b Process step shown take place in which the gate electrodes 40 getting produced. In this case, the insulation layer still present at the bottom of the trench 50 ' implanted in the semiconductor body.

The trenches are then made with an electrode material, for example a metal or polysilicon, for producing the electrodes 80 replenished like this in 3e is shown in the result in order to arrive at the semiconductor component according to the invention.

If the electrode consists of a metal or an n-doped silicon, a silicide is advantageously applied to the exposed surface of the semiconductor body, at least in the region of the p-doped zone, for example, prior to producing the electrode, in order to ensure good ohmic contact between the electrode 80 and the p-doped zone 90 to prevent a pn junction or Schottky contact from occurring at this junction.

If the electrode consists of a p-doped polysilicon, then such a silicide layer in the transition area between the electrode's 80 and the p-doped zone 12 to be dispensed with. In this case, the upper part of the trench on the side walls before manufacturing the electrode 80 a material layer, for example a silicide, is applied to the source zone in order to pn junction between the electrode 80 and to prevent the source zone. If a connection electrode covering the entire arrangement is provided 85 , in the 2 is shown in dashed lines and which consists for example of a metal and which is the electrode 80 and the source zone shorts, such a silicide layer can be dispensed with.

The contacting of the gate electrodes from the outside can in the semiconductor device according to the invention like conventional ones Trench transistors are made so that a detailed illustration is dispensed with here.

4 shows another semiconductor device according to the invention, by means of which a MOSFET with a breakdown structure with high dielectric strength and low specific on-resistance is realized.

The semiconductor component comprises a semiconductor body 100 with one in the area of a back 102 of the semiconductor body 100 arranged heavily n-doped drain zone 12 , one at the drain zone 12 subsequent drift zone 14 , one at the drift zone 14 subsequent p-doped body zone 20 , as well as one to the body zone 20 subsequent, in the area of a front 101 of the semiconductor body formed strongly n-doped source zone 30 , The body zone 20 and the source zone 30 are between two trenches spaced apart in the lateral direction 61 . 62 trained starting from the front 101 of the semiconductor body 100 in the vertical direction along the source zone 20 and the body zone 20 to the drift zone 14 extend. In these trenches 61 . 62 are gate electrodes 42 formed out by means of gate insulation layers 52 compared to the semiconductor body 100 are isolated.

The trenches 61 . 62 with the gate electrodes 42 , as well as the source zones arranged between the trenches 30 and body zones 20 with the drift zone 14 and the drain zone 12 form a MOSFET structure, the circuit symbol of this MOSFET in 4 is drawn.

The semiconductor component further comprises at least one further trench 60 that is laterally spaced from the first trench 61 is arranged, this trench 60 Part of a further transistor structure with a source zone 30 and a body zone 20 can be.

The distance of this further trench 60 to the first trench 61 in the lateral direction is less than the distance between the first and second trench 61 . 62 the transistor structure, being between the two more closely spaced trenches 60 . 61 an opening structure is arranged. In the exemplary embodiment, this breakdown structure comprises a p-doped semiconductor zone 83 that are below the front 101 of the semiconductor body is formed and which are located in the drift zone 14 followed. Between this semiconductor zone 83 and the drift zone 14 a pn junction is formed. The p-doped zone 83 is with the source zone 30 shorted out like this in 4 is shown schematically.

The trenches 60 . 61 . 62 extend in the exemplary embodiment in the vertical direction far below the p-doped zone 20 the more so between the closer trenches 60 . 61 arranged breakthrough structure of that in the body zone 20 with activated electrode 42 shield the trained channel.

The extent of the p-doped zone 83 in the vertical direction of the semiconductor body can vary, in order to thereby reduce the breakdown voltage of the diode operated in the source-drain direction in the forward direction or in the drain-source direction in the reverse direction, whose circuit symbol in the 4 and 5 is shown schematically to vary. According to the embodiment 4 the pn junction is located approximately halfway up the trenches 60 . 61 below the gate electrode 42 , while in the embodiment according to 5 the pn junction just above the trench ends and also below the gate electrode 42 lies. The drift zone 12 can in this embodiment following the p-doped zone 83 the breakthrough structure must be more heavily endowed than in the other areas of the drift zone 12 ,

It is also important in this component that the breakdown voltage of the breakdown structure is lower than the breakdown structure of the body diode, so that a voltage breakdown always occurs first on the breakdown structure designed for larger currents. The breakdown voltage is over the distance of the p-doped zone 83 to the heavily n-doped drain zone 12 adjustable, the breakdown voltage decreasing with increasing distance.

Claims (13)

Semiconductor component which has the following features: a semiconductor body ( 100 ) with a first connection zone ( 12 . 14 ) and a second connection zone ( 30 ) of a first line type (n), - one between the first and second connection zone ( 12 . 14 . 30 ) arranged channel zone ( 20 ) of a line type (p) complementary to the first line type, - at least one is in the semiconductor body ( 100 ) trench ( 60 ) from the second connection zone ( 30 ) through the canal zone ( 20 ) to the first connection zone ( 12 . 14 ) is enough - one in the trench ( 60 ) arranged control electrode ( 40 ) that are adjacent to the canal zone ( 20 ) and isolated from the semiconductor body ( 100 ) is arranged, - one between the first and second connection zones ( 12 . 14 . 30 ) running breakdown current path, which has at least one pn junction and which is reached when one between the first and second connection zone ( 12 . 14 . 30 ) applied breakdown voltage, characterized in that the breakdown current path at least partially in the trench ( 60 ) runs. Semiconductor component according to Claim 1, in which in the trench ( 60 ) an electrode ( 80 ) is arranged, which with the second connection zone ( 30 ) is electrically conductively connected to the control electrode ( 40 ) is electrically insulated and located at the bottom of the trench ( 60 ) to the semiconductor body ( 100 ) connects, the semiconductor body in this connection area a doped zone ( 90 ) of the second conduction type (p). Semiconductor component according to Claim 2, in which the connection electrode ( 80 ) consists of a metal or a polysilicon. Semiconductor component according to Claim 1, in which in the trench ( 60 ) a connection electrode ( 81 ) of the second line type (p) is arranged, which with the second connection zone ( 30 ) is electrically connected and which is opposite the control electrode ( 40 ) is electrically insulated, with this connection electrode ( 81 ) and the semiconductor body ( 100 ) a zone ( 82 ) of the first power type, which is opposite the control electrode ( 40 ) is electrically insulated. Semiconductor component according to Claim 4, in which the connection electrode ( 81 ) and between the connection electrode ( 81 ) and the semiconductor body arranged zone ( 82 ) each consist of polysilicon. Semiconductor component which has the following features: a semiconductor body with a front side ( 101 ) and a back ( 102 ) and a first connection zone formed in the area of the rear ( 12 . 14 ), - at least a first and a second trench ( 61 . 62 ) which are spaced apart in the lateral direction of the semiconductor body and which each extend in the vertical direction into the semiconductor body ( 100 ) extend into - at least one between the first and second trench ( 61 . 62 ) arranged second connection zone ( 30 ) and one between the first and second trench ( 61 . 62 ) and between the first connection zone ( 12 . 14 ) and the second connection zone ( 30 ) arranged channel zone ( 20 ), - at least a third trench ( 60 ) with an isolated from the semiconductor body ( 100 ) formed control electrode which is laterally spaced from the first trench ( 61 ) is arranged - a between the third trench ( 60 ) and the first trench arranged breakdown current path, characterized in that the distance between the first trench ( 61 ) and the third trench ( 60 ) is less than the distance between the first and second trench ( 61 . 62 ). Semiconductor component according to Claim 6, in which between the first trench ( 61 ) and the third trench ( 60 ) a diode is formed, one connection of which is through the first connection zone ( 12 . 14 ) of the semiconductor body is formed. Method for producing a semiconductor component, the method comprising the following method steps: providing a semiconductor body with a first connection zone ( 12 . 14 ) and a second connection zone ( 30 ) of a first line type (n) and one between the first and second connection zone ( 12 . 14 . 30 ) arranged channel zone ( 20 ) a line type (p) complementary to the first line type, - producing at least one into the semiconductor body ( 100 ) starting from a front ( 101 ) trench ( 60 ) from the second connection zone ( 30 ) through the canal zone ( 20 ) to the first connection zone ( 12 . 14 ) is sufficient - producing at least one in the trench ( 60 ) arranged control electrode ( 40 ) that are adjacent to the canal zone ( 20 ) and isolated from the semiconductor body ( 100 ) is arranged, - establishing a between the first and second connection zone ( 12 . 14 . 30 ) arranged breakthrough structure which has at least one pn junction and which is at least partially in the trench ( 60 ) runs. Method according to Claim 8, in which the production of the control electrode ( 40 ) includes the following process steps: - application of an insulation layer ( 50 ' ) on the semiconductor body ( 100 ) and in the at least one trench ( 60 ), - depositing an electrode layer ( 40 ' ) on the insulation layer ( 50 ' ), - removing the electrode layer ( 40 ' ) above the front ( 101 ) of the semiconductor body ( 100 ), at the bottom of the at least one trench ( 60 ) and partially in the upper area of the trench side walls adjacent to the second connection zone ( 30 ). Method according to Claim 9, in which on exposed surfaces of the control electrode ( 40 ) in the at least one trench ( 60 ) an insulation layer ( 70 ) is applied before the breakthrough structure is produced. Method according to one of claims 8 to 10, in which after the manufacture of the gate electrode ( 40 ) a zone ( 90 ) of the second power type (p) below the at least one trench ( 60 ) generated becomes. Method according to Claim 11, in which after the production of the control electrode ( 40 ) and the insulation layer ( 70 ) a silicide layer is applied to exposed areas of the semiconductor body at the bottom of the at least one trench. 13. The method according to claim 11 or 12, wherein the at least one trench ( 60 ) with an electrode material ( 80 ) is filled up. Method according to one of Claims 8 to 10, in which, after the control electrode ( 40 ) and the insulation layer ( 70 ) the at least one trench ( 60 ) partially filled with a first semiconductor material of a first power type, which forms the first connection zone ( 12 . 14 ) at the bottom of the semiconductor body ( 100 ) contacted and where the trench ( 60 ) is then filled with a semiconductor material of the second conductivity type.