DE102023201315A1 - Mechatronic element, mirror, mirror arrangement and method for their manufacture - Google Patents

Abstract

The invention relates to a mechatronic element which comprises a mechatronic arrangement and a protective layer. The mechatronic element is characterized in that the protective layer is at least partially applied to at least one surface and/or at least partially within at least one cavity. The invention also relates to an individual mirror for reflecting DUV and/or VUV and/or EUV radiation, which comprises the mechatronic element according to the invention and a reflective coating, wherein the reflective coating is at least partially applied to a surface. The invention also relates to a micromirror array with at least two individual mirrors according to the invention. The invention further relates to a facet mirror with at least two micromirror arrays according to the invention. The invention further relates to a semiconductor technology system comprising at least one facet mirror according to the invention. The invention further relates to a method for producing a mechatronic element according to the invention, and also to a method for producing an individual mirror according to the invention.

Description

Background of the invention

The invention relates to a mechatronic element which comprises a mechatronic arrangement and a protective layer. The mechatronic element is characterized in that the protective layer is at least partially applied to at least one surface and/or at least partially within at least one cavity. The invention also relates to an individual mirror, in particular for reflecting DUV and/or VUV and/or EUV radiation, which comprises the mechatronic element according to the invention and a reflective coating, wherein the reflective coating is applied to a surface of the protective layer or to a surface of the mechatronic arrangement. The invention also relates to a micromirror array with at least two individual mirrors according to the invention. The invention further relates to a facet mirror with at least two micromirror arrays according to the invention. The invention further relates to a semiconductor technology system comprising at least one facet mirror according to the invention. The invention further relates to a method for producing a mechatronic element according to the invention, and further relates to a method for producing an individual mirror according to the invention.

• DE 10 2020 208 665 , DE 102008009600 A1

The contents of the following patent applications are incorporated herein by reference:

• EN 10 2020 208 665 , EN 102008009600 A1

In semiconductor lithography, micro- and nano-structured elements are produced as integrated circuits, whereby the structuring properties are defined by irradiating a substrate with a directed radiation source, which uses light, for example. For this purpose, projection exposure systems are used in particular, which include a radiation source, an illumination system, a photomask (a so-called reticle), and a projection system. Such subsystems of a projection exposure system are each made up of separate optical units, which first guide the radiation used for lithography from a radiation source via an illumination system to a photomask, and from there generate a corresponding image of the photomask using the projection system on a photosensitive layer of a substrate. The photosensitive layer is usually a photoresist and the substrate is a silicon wafer.

In order to be able to produce the smallest possible structures on a substrate using microlithography in projection exposure systems, devices have been used for several years which use particularly short-wave light from the so-called extreme ultraviolet (EUV) wavelength range with wavelengths between 0.1 nm and 30 nm, in particular 13.5 nm. Due to the inherent radiation absorption of matter in this wavelength range, transmission optics cannot be used for this type of radiation in a beam path of a projection exposure system consisting of several units. Therefore, in the case of EUV radiation, only reflection optics are used, for example mirrors. In order to continuously reduce the structure size of integrated circuits, projection exposure systems have recently been proposed which use optical elements with a large numerical aperture (high-NA) or with a very large numerical aperture (hyper-NA). As the numerical aperture increases, the surface of an optical element required and used to reflect the radiation becomes correspondingly larger.

Optical elements for use in DUV and/or VUV and/or EUV semiconductor lithography in a semiconductor technology system, e.g. an EUV mirror in a projection exposure system, must meet high requirements with regard to the prevailing environmental conditions. Firstly, in such systems, a reactive chemical environment, which arises from a plasma of a hydrogen gas, often prevails in at least one area of the system. In such an environment, the optical elements are exposed to a high concentration of reactive, gaseous components of the hydrogen plasma, for example free charge carriers, free ions, free radicals and/or free radical ions. Such components can lead to damage to the optical components, in particular to damage to reflective surfaces, and thus have a negative effect on the optical properties of the optical element. Secondly, in such systems there is a high radiation intensity, which damages unprotected optical elements by absorbing the DUV and/or VUV and/or EUV radiation. Thirdly, such absorption is accompanied by a high thermal load on the optical elements, which also has a damaging effect on the optical properties of the optical elements.

In the beam path of a semiconductor technology system, in particular a projection exposure system for EUV semiconductor lithography, there must be no time-varying and uncontrollable changes in the optical properties of the optical elements, since such effects can manifest themselves, for example, in wavefront errors of the EUV radiation or in a loss of reflectivity of an optical element and therefore in a reduction in the production capacity of the plant.

Micromirrors have recently been proposed as optical elements for guiding DUV and/or VUV and/or EUV radiation in a semiconductor technology system in order to achieve specifically adjustable lighting conditions within the semiconductor technology system. Such micromirrors as optical elements are described, for example, in [ EN 102008009600 ] Such optical elements for applications in the field of semiconductor lithography are further formed from arrays of mirrors in facets in order to achieve spatial control of the reflection states of certain parts of a larger mirror surface. Facet mirrors are equipped with several hundred micromirrors, wherein the micromirrors are designed to be actuable about several axes so that flexible lighting settings can be set.

In the [ EN 10 2015 225 535 A1 ] describes a method for producing a multi-mirror arrangement with a plurality of displaceable individual mirrors, as well as a multi-mirror arrangement with a plurality of displaceable individual mirrors.

In the [ EN 10 2017 213 176 ] describes EUV mirrors that are coated with a protective layer.

In the [ DE102014213181A1 ] and in the [ DE10218204364A1 ] describes an optical element which is protected from a hydrogen plasma by a protective layer.

The solutions known in the prior art do not meet the requirements for individual mirrors, micromirror arrays, and facet mirrors formed therefrom in the environment of a hydrogen plasma in terms of chemical resistance to highly corrosive media, in terms of flexibility in the manufacturing process, in particular in terms of coating shaded areas and in terms of cavities. There is therefore a constant need to improve such components and the manufacturing process for producing the components.

Object of the invention

It is the object of the present invention to overcome the disadvantages of the prior art and to provide a mechatronic element that can be actuated in at least one spatial direction, wherein the mechatronic element or parts of the mechatronic element are protected from reactive components of a hydrogen plasma, and wherein the mechatronic element is part of an optical arrangement of a semiconductor technology system, in particular a mirror or part of a mirror for reflecting DUV and/or VUV and/or EUV radiation.

Subject of the invention

The object underlying the invention is achieved by a mechatronic element, a single mirror, a micromirror array, a facet mirror, and also a semiconductor technology system with the features of the independent claims, and also a method for producing a mechatronic element and a method for producing a single mirror with the features of the independent claims. Further advantageous embodiments of the invention are the subject of the subclaims and the exemplary embodiments of the invention described below.

In the following description of the invention and the associated embodiments, counting words such as "a" or "an" do not necessarily refer to a limitation on exactly one partial body, a composite body, a casing, an element, a component, a method and the like. Rather, several partial bodies, composite bodies, casings, elements, components, methods, such as two, three or more, can also be provided. Any other counting word used here should not be interpreted as meaning that there is a limitation to exactly the number of partial bodies, composite bodies, casings, elements, components, methods mentioned. Rather, numerical deviations upwards and downwards are possible unless otherwise stated.

Further possible implementations of the invention also include combinations of features or embodiments described above or below with respect to the exemplary embodiments that are not explicitly mentioned. The person skilled in the art will also add individual aspects as improvements or additions to the respective basic form of the invention.

The invention relates to a mechatronic element which comprises a mechatronic arrangement and a protective layer. The mechatronic element is characterized according to the invention in that the protective layer is at least partially applied to at least one surface and/or at least partially within at least one cavity of the mechatronic arrangement. In this advantageous embodiment, the entirety of the surfaces and cavities of the mechatronic element is protected from the outside. ard influences, in particular the influence of hydrogen plasma, thereby reducing the probability of failure of the mechatronic element due to damaging environmental influences.

In an advantageous variant of the invention, the mechatronic arrangement comprises at least one substrate and/or one connecting element and/or one actuator system and/or one base plate. In a further variant of the invention, the mechatronic arrangement also comprises a sensor unit. In a further variant of the invention, the connecting element consists of several individual elements, for example a joint structure and/or a joint base. In a further variant of the invention, the protective layer is located between two of the partial bodies of the mechatronic element, for example between the base plate and the joint base. The joint structure is designed in such a way that the connecting element creates a movable connection between the elements to be connected, for example the actuator system and the substrate. This advantageous embodiment therefore enables all parts of the mechatronic arrangement to be coated with a protective layer and thus comprehensive protection of the parts from environmental influences.

In a further variant of the invention, the sensor unit comprises at least one sensor which measures at least one chemical and/or physical property of the actuator system and/or another element, in particular a substrate, further in particular a mirror. In one aspect of the invention, the corresponding sensor unit measures the translational displacement or tilting of the substrate by the actuator system in at least one dimension of a Cartesian coordinate system. The information about the deflection is then forwarded to an evaluation unit via a line unit.

In a special variant of the invention, a sensor unit comprises an orientation sensor and/or a capacitive sensor and/or a temperature sensor and/or a pressure sensor. The sensor unit is not limited to the use of exactly one of the sensor types described, but in a further variant comprises a combination of a large number of different sensor types. In principle, other sensor types are also conceivable, in particular optical sensors. In this advantageous variant of the embodiment, the positions and orientations of the substrates of the mechatronic elements in space are known at all times of use, can be tracked over time and, if deviations from a target value occur, can be corrected via an actuator effect of the actuator system. In a further aspect of the invention, the sensor unit comprises application-specific integrated circuits and/or circuits for open or closed loop control loops.

In one aspect of the invention, the mechatronic element, in particular the substrate and/or the connecting element and/or the actuator system and/or the sensor unit and/or the base body, contains silicon. For example, the substrate is a silicon wafer or a part of a silicon wafer. Such substrates can be very well controlled in terms of their surface properties and allow very low roughness values of the surfaces of the substrate, in particular the surface which is necessary for using the substrate as part of an optical component, in particular a mirror. Furthermore, silicon has excellent thermal and elastic properties and surfaces of the material can be precisely structured.

In a further development of the invention, the substrate and/or the connecting element and/or the actuator system and/or the sensor unit and/or the base body is made, for example, from silicon-containing quartz glass, in particular from titanium-doped quartz glass, which is known, for example, under the trade name ULE®, from a silicon-containing glass ceramic, for example a glass ceramic known under the trade name Zerodur®, or from silicon, in particular from mono- or polycrystalline silicon. Such materials have a very high dimensional stability over a very wide temperature range and their shape can be processed very well using various chemical and/or physical processing methods. In a special development of the invention, structures are formed inside the substrate which serve as channels for the substrate for temperature control using suitable media, for example water or gas.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the protective layer is stable against chemical reactions with a hydrogen plasma and its components and/or DUV and/or VUV and/or EUV radiation and/or temperatures > 473 K. In a further variant of this embodiment, the mechatronic element is characterized in that the protective layer is impermeable to components of a hydrogen plasma. A protective layer that is stable according to the invention is characterized in that under the ambient conditions in, for example, a semiconductor technology plant, in particular the EUV semiconductor technology, ie under the influence of EUV radiation and/or the presence of a hydrogen plasma of the composition defined below, it is ensured over the entire service life of the semiconductor technology plant (typically approximately five years or more) that the protective layer does not fall below a minimum thickness of at least five monolayers. The hydrogen plasma comprises gaseous ions, for example H ₂ ⁺ , H ₃ ⁺ , etc., free protons, free electrons, and/or free radicals (H·, H ₂ ·, etc.) and is generated in an environment with a negative pressure of hydrogen gas up to a vacuum compared to standard conditions.

Since parts of the mechatronic element contain silicon in elemental form or in chemically bound form, components of the hydrogen plasma chemically attack the individual parts of the mechatronic element, changing the functionality of the substrates, for example mechanical and/or electrical properties. In addition, the attack forms easily volatile silanes Si _x H _y with x and y as stoichiometric factors of the silanes. These silanes are physically volatile, chemically reactive compounds and tend to self-deposit to form monolayers or multilayers on surfaces, which in turn lead to the degradation of the corresponding optical elements. A central and advantageous aspect of the invention is therefore to prevent chemical attack on the parts of the mechatronic element by components of the hydrogen plasma and consequently to prevent the formation of silanes.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the position of the substrate in space and/or the orientation of the substrate relative to a surface of the base body is adjusted by means of the actuator system in at least one degree of freedom. In one aspect of the invention, an adjustable degree of freedom is, for example, a translational displacement in a spatial direction of a Cartesian coordinate system. In a further aspect, an adjustable degree of freedom is a tilting of the substrate by an angle relative to an axis of a Cartesian coordinate system. A tilting and a translational displacement can also be combined in a further aspect of the invention.

In an advantageous variant of this embodiment, the joint structure is designed as a spring element or as a spring structure. In a further variant of this advantageous embodiment of the invention, the movement of the substrate mediated by the joint structure is dampened, so that the substrate is not set into vibration by a deflection movement of the joint structure.

In a further advantageous embodiment of the invention, the mechatronic element is further characterized in that a surface of the substrate is planar, or convexly curved, or concavely curved, or designed as a free-form surface. In a special embodiment, the substrate has a structuring of the surface, for example in the form of a pseudo-two-dimensional grid.

The outer contour of a substrate according to the invention is not geometrically limited. In one variant of the invention, the outer contour of the substrate is, for example, polygonal, in particular trigonal, tetragonal, pentagonal, hexagonal, heptagonal, octagonal, or with a higher number of points, and the edge lengths of the side edges of the polygonal structure of the substrate are the same length. In a further variant of the invention, the edge lengths of the side edges of the polygonal structure of the substrate are at least partially unequal in length. In each of the embodiments, one or more edges of the substrate can have a curved contour. In further variants, tetragonal contours are designed in particular as squares or as rectangles. In a further variant of the invention, the outer contour of the substrate is round or oval. In a further variant of the invention, the contour of the substrate is designed as a free form.

The advantage of this aspect of the invention is a high degree of flexibility in the use of the mechatronic elements, which according to the invention are arranged for use in larger areas, which in turn consist of small, individually actuatable partial areas.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the protective layer has a layer thickness in the range 10-1000 nm, preferably 30 - 300 mm, particularly preferably 50 - 150 nm with a layer thickness error of at most 1 nm. Such layer thicknesses advantageously prevent reactive components of the hydrogen plasma from penetrating the protective layer over the lifetime of a component in a semiconductor technology system. The maximum thickness of the protective layer is determined by the application-specific requirements for a prevailing layer tension, as well as the resulting layer adhesion between the protective layer and the substrate, and also by the surface quality of the substrate area to be coated.

In a further advantageous embodiment, the mechatronic element is characterized in that a surface of the protective layer or a surface of the substrate has a surface roughness in the range 80 - 500 pm with a standard deviation of at most 20 pm. The advantage of this aspect of the invention lies in the broad applicability of the protective layers and the substrate as elements of a semiconductor technology system and in particular in ensuring highly precisely controlled layer thicknesses, for example of the protective layer, when applying the protective layer to a surface.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the protective layer is amorphous, crystalline, or partially crystalline. In this embodiment, the previously mentioned surface roughness can be easily achieved and specifically adjusted using appropriate processing steps, for example polishing.

In a further embodiment of the invention, the electrical conductivity in at least one partial area of the protective layer is adjusted by doping in the range of 10 ^-2 - 10 ^-4 S. The conductivity is adjusted by a suitable choice of the coating parameters in a suitable step of a coating process. The use of at least partially electrically conductive protective layers is advantageous in order to be able to control electrical charging effects on the coated surface or on a surface adjacent to the coated surface that is also at least partially electrically conductive.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that at least a portion of the protective layer is electrically grounded by means of a grounding element. Since electrically charged components are present in the environment of a hydrogen plasma, for example electrically charged ions, clusters and/or radicals and radical ions, which interact with a surface contacting the hydrogen plasma, electrical charge carriers accumulate under operating conditions on a surface coated with the protective layer, which can change the properties of the surface and the coating material through physical and/or chemical processes. In addition, charge carriers can be mobilized from materials by external irradiation with, for example, EUV light. As a result of the generation of mobile electrical charge carriers, an electrically charged surface is susceptible to spontaneous electrical discharges, for example, or contamination effects via electrically polarizable and/or charged particles from the environment of the surface. Furthermore, electrical charge carriers react with chemical components in the environment of the surface, for example through oxidation and/or reduction processes, and thereby cause modifications to the surface structure. Furthermore, electrical charge carriers also cause damage to the structure of the protective layer directly through chemical reactions or physical interactions within the protective layer, for example by influencing the relative layer stresses.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the protective layer consists of at least one layer of electrically conductive material and/or at least one layer of electrically insulating material, the composition of the protective layer on the individual surfaces being homogeneous in each case. In one variant of the invention, in the case of a multiple-periodic sequence of alternating layers of a first electrically conductive material and a second electrically insulating material, a first layer, as viewed from the base body, is a layer of electrically conductive material. In a further variant of the invention, in the case of a multiple-periodic sequence of alternating layers of a first electrically conductive material and a second electrically insulating material, a first layer, as viewed from the base body, is a layer of electrically insulating material. In all variants of the invention, the number of layers of electrically conductive material and electrically insulating material is not limited. The use of such multiple periodic sequences of alternating layers of a first electrically conductive material and a second electrically insulating material advantageously allows the realization of simultaneous electrical conductivity to exclude electrostatic charging of the mechatronic element and an insulating effect to avoid short circuits, in particular for applications involving a large number of mechatronic elements. According to the invention, any material which has a specific resistance of 1-1000 MΩ m is considered to be an electrically insulating material.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that each layer of electrically conductive material and/or each layer of electrically insulating material has a layer thickness of 1 - 100 nm with a layer thickness error of 1 nm. A layer thickness error is defined as the maximum permissible deviation of an actual layer thickness from a predetermined target layer thickness over the entire layer.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the electrically conductive material comprises one of the elements of groups 3-6 and/or groups 8-11 of the periodic table of elements and/or Re. In a variant of the embodiment, the layer of electrically conductive material consists of an alloy of two, three or more of the above-mentioned elements with adjustable stoichiometric ratios. The physical and/or chemical properties of the protective layer, in particular the electrical conductivity, are defined by the stoichiometric composition of the layer of electrically conductive material and can be adjusted via this during a coating process.

In a further advantageous embodiment of the invention, the mechatronic element is characterized in that the electrically insulating material comprises oxides and/or nitrides and/or consists of a ceramic material. In particular, the layer of electrically insulating material contains compounds of the composition AlOx, AlxOy and/or TixOy, where x and y are stoichiometric factors which can also assume odd values.

The invention further relates to an individual mirror, wherein the individual mirror according to the invention comprises a mechatronic element as already described above, as well as a reflective coating, in particular one that reflects DUV and/or VUV and/or EUV radiation. In one variant of the invention, the individual mirror according to the invention is characterized in that the reflective coating is at least partially applied to at least one of the surfaces. In a further variant, the individual mirror according to the invention is characterized in that the reflective coating is applied to the surface of the substrate already described above. In both embodiments, the surface of the protective layer and/or the surface of the substrate have a surface roughness in the range 80 - 500 pm with a standard deviation of at most 20 pm.

In a further variant of the invention, the reflective coating is, for example, a plurality of alternating layers of molybdenum and silicon, so that the reflective coating reflects as EUV light in the spectral range between 5 - 30 nm, in particular at 13.5 nm. The specific design of such a reflective coating can comprise, in addition to actually reflective layers, one or more additional layers such as protective layers, base layers or adhesion-promoting layers, which are known to the person skilled in the art, so that these are not described in more detail in the present application.

In a special variant of the invention, the reflective coating is designed to reflect DUV and/or VUV and/or EUV radiation that strikes at grazing incidence. In a further variant, the reflective coating is designed to reflect EUV radiation that strikes at a normal angle of incidence and angles of incidence deviating from this by +/-45°, in particular angles of incidence deviating by +/-25°, further in particular angles of incidence deviating by +/-15°.

According to the invention, the outer contour and the reflective optical surface of the individual mirror take on the same configurations as the variants already described above for the structure of the substrate, taking into account the protective layer and the reflective coating that additionally contribute to the structure.

In a special variant, the reflective optical surface of the individual mirror contains a pseudo-two-dimensional grating structure, in particular in the form of a diffraction grating. In a special variant of the invention, the grating structure diffracts, for example, different spectral components of incident light impinging on the individual mirror, for example the DUV and/or VUV and/or EUV radiation to be reflected, in defined spatial directions and thus allows a spatial separation of the incident spectral components. In a further special variant of the invention, a grating structure diffracts IR radiation impinging on the individual mirror in the same direction in addition to the DUV and/or VUV and/or EUV radiation in a further defined spatial direction and thus allows a spatial spectral separation of the IR radiation from the DUV and/or VUV and/or EUV radiation.

The invention further relates to a micromirror array, wherein a micromirror array according to the invention comprises a first individual mirror and a second individual mirror. A micromirror array according to the invention is further characterized in that the one first individual mirror and the one second individual mirror can be adjusted independently of one another in every degree of freedom adjustable by the actuator system, taking into account the maximum ranges of movement of all axes of movement of the actuators of the at least one actuator system, are arranged contactlessly with one another, and are arranged to form an approximately gap-free arrangement of reflective coatings.

In a special embodiment, the base bodies of the individual mirrors of the micromirror array are arranged in a common plane, i.e. the individual mirrors are in a coplanar position. For this purpose, in a further special embodiment, the individual mirrors are fixed to a common base plate of the micromirror array. In further variants of the invention, the base bodies of the individual mirrors of the micromirror array form a non-coplanar arrangement, in particular a pseudo-concave arrangement, or a pseudo-convex arrangement, or an arrangement designed according to a free-form surface. In a further variant, a micromirror array with approximately curved reflection surfaces as a whole is realized with a large number of individual mirrors, each with a planar surface. The accuracy of the approximation of the arrangement of individual mirrors with planar surfaces depends on the edge length of the individual mirrors, with each edge of an individual mirror being understood as a tangential approximation to the shape of the curved reflection surface of the micromirror array.

In one variant, the outer contour of the micromirror array is, for example, polygonal, in particular trigonal, tetragonal, pentagonal, hexagonal, heptagonal, octagonal, or with a higher number of squares. In special variants of the invention, in each of the embodiments, one or more edges of the outer contour of the micromirror array have a curved shape. In other variants, tetragonal contours are designed in particular as squares or as rectangles. In another variant of the invention, the outer contour of the micromirror array is round or oval. In another variant of the invention, the contour of the micromirror array is designed as a free form.

The invention further relates to a facet mirror, wherein a facet mirror according to the invention comprises a base plate, as well as at least one first micromirror array and at least one second micromirror array. Furthermore, a facet mirror according to the invention is characterized in that the first micromirror array and the second micromirror array are fixed to the base plate and form an overall reflection surface for actuator-controlled reflection of DUV, VUV and/or EUV radiation. Each individual mirror of each micromirror array can be adjusted independently in each degree of freedom that can be adjusted by an actuator system. In one variant of the invention, the reflective surfaces of the micromirror arrays are lined up next to one another without offset, so that a quasi-continuous surface is formed, only interrupted by gaps between the individual mirrors of the micromirror array and by the gaps between the individual micromirror arrays.

Similar to the above-described case of the arrangement of individual mirrors of a micromirror array, in a special embodiment of the facet mirrors, a first micromirror array and a second micromirror array are in a coplanar position. In further variants of the invention, the base plates of the micromirror arrays of the facet mirror form a non-coplanar arrangement, in particular a pseudo-concave arrangement, or a pseudo-convex arrangement, or an arrangement designed according to a free-form surface. The facet mirror can in particular be designed as a multi-ellipsoid mirror. Instead of curved individual mirrors, such curved facet mirrors can in turn be replaced by individual mirror groups with flat reflection surfaces, with the non-planar surfaces of a curved facet mirror replaced in this way being approximated by a polyhedron of individual mirrors of a micromirror array.

In a further aspect of the invention, the micromirror arrays of the facet mirror have the same shape and size. In a special embodiment, the micromirror arrays of the facet mirror have different shapes and/or sizes designed according to the above, so that facet mirrors can be approximated as free-form surfaces by suitable combinations of the shapes and contours of the micromirror arrays.

The invention further relates to a semiconductor technology system. A semiconductor technology system according to the invention comprises at least one facet mirror according to the invention and is characterized in that the at least one facet mirror, as part of an illumination system, directs DUV and/or VUV and/or EUV radiation from a radiation source to a reticle. In one variant, a semiconductor technology system is in particular a system for producing structured semiconductor substrates. In another variant, a semiconductor technology system is a system for qualifying optics used in the field of semiconductor technology. In another variant, a semiconductor technology system is a system from the field of DUV and/or VUV and/or EUV semiconductor technology, in particular a projection exposure system for semiconductor lithography of wafers or similar substrates. In another variant, a semiconductor technology system is a mask inspection system for semiconductor lithography or a wafer inspection system for semiconductor lithography.

The invention also relates to a method for producing a mechatronic element. In a first step of a method according to the invention, at least one component of the mechatronic arrangement is provided, in particular a base body and/or an actuator system and/or a connection unit and/or a substrate. In a further method step, a mechatronic arrangement is produced from the components mentioned using suitable joining techniques, for example gluing and/or mechanical joining methods and/or bonding methods. In a further variant, individual components are grown on surfaces of existing components using suitable methods. In several embodiments of the invention, a mechatronic arrangement comprises one, two or more of the named components. In a third method step, the mechatronic arrangement is coated with a protective layer on at least one of the surfaces and/or within at least one cavity of the mechatronic arrangement, whereby the mechatronic element is produced.

In a first advantageous variant of the method according to the invention, the individual components of the mechatronic arrangement are provided individually, coated individually and then assembled to form a mechatronic element, for example glued, mechanically joined or bonded. This variant has the advantage that the protective layer is formed on all surfaces, i.e. also on surfaces between the components of the mechatronic arrangement.

In a further advantageous variant of the method according to the invention, a first component of the mechatronic arrangement is first provided and coated with a protective layer. A further component of the mechatronic arrangement is then provided and joined to the coated first component, for example glued, mechanically joined, bonded, or other processes known to those skilled in the art of thin-film technology, bulk microstructuring and joining technology in MEMS, thereby creating a partially coated mechatronic sub-arrangement. In a subsequent step, the partially coated mechatronic sub-arrangement consisting of the coated first component and the second component is coated with a further protective layer. This creates a second layer of a protective layer on some surfaces and in cavities of the first component and a first layer of the protective layer on some surfaces and in cavities of the second component. In the special embodiment, this procedure is continued for further components of the mechatronic arrangement until all of the intended components of the mechatronic arrangement have been joined together and coated. The result of the manufacturing process is a mechatronic element which, starting from the first component provided up to the last component provided, has a further layer of a protective coating on a part of the surfaces and in cavities of the components.

In a further variant of the method according to the invention, the mechatronic arrangement or at least one of the components of the mechatronic arrangement is coated with the protective layer using a highly conformal coating method. A highly conformal coating method is characterized according to the invention in that a layer thickness error of less than 1 nm is achieved as a deviation from a predetermined target layer thickness over the entirety of the coated surfaces and over the entirety of the cavities. A highly conformal coating process is, for example, an atomic layer deposition (ALD), chemical vapor deposition (CVD), sputter deposition, liquid precursor deposition or pulsed laser deposition (PLD). These processes have the advantage that the surfaces have a high degree of conformity. In a special variant of the invention, a closed layer of the protective layer is therefore advantageously formed on the components. Furthermore, rough surfaces in uneven places, for example steps of atomic layers or clusters formed on surfaces, form points of attack for chemically reactive components of a medium surrounding the surface. The high conformity of the protective layer therefore reduces the risk of chemically induced degradation reactions of the protective layer with components of the hydrogen plasma. Furthermore, such highly conformal surfaces can be easily coated with reflective layers to form reflective surfaces, in particular DUV, VUV and EUV light reflecting surfaces, and to achieve the surface properties necessary to fulfil the function, in particular roughness and/or layer thickness variation and/or cleanliness.

In a further variant of the method according to the invention, the coating process during the coating step of the mechatronic arrangement with a protective layer consists of a sequence of individual coating steps. In a further aspect of this variant of the invention, the coating processes for an electrically conductive material and an electrically insulating material are the same Coating methods. In a further aspect of the invention, the coating methods for an electrically conductive material and an electrically insulating material are different coating methods.

In a further embodiment of the method according to the invention for producing a mechatronic element, the method further includes chemical and/or physical processing of the protective layer. An advantageous aspect of this variant is the cleaning of the protective layer following the coating process. Another advantageous aspect of this variant is, for example, the chemical and/or physical post-processing of the surface to achieve the surface roughness according to the invention. Another advantageous aspect of this variant is, for example, chemical and/or physical processing for the purpose of increasing the chemical and/or physical stability of the protective layer and/or for preparing further processing and/or coating steps. In a further aspect of this embodiment, a corresponding chemical and/or physical processing method is also carried out after each of the previously described sequential (partial) coatings of individual components of the mechatronic arrangement and/or individual mechatronic sub-arrangements.

In a further embodiment of a method according to the invention, a further method step comprises producing a grounding of at least one layer of electrically conductive material of the protective layer by means of a grounding element. In a special variant of the invention, a grounding element is connected to the layer of electrically conductive material of the protective layer in such a way that a corresponding potential equalization of the layer of electrically conductive material is ensured. In a further special variant of the method, one, two or more grounding elements are used to produce an electrical potential equalization of the protective layer. In special geometric configurations of the mechatronic arrangement and/or the components of the mechatronic arrangement, as well as by applying chemical and/or physical processing methods of a layer of a protective layer during the manufacturing process of the mechatronic element, several grounding elements are used in such a way that an electrical potential equalization of all electrically conductive layers of the protective layer is formed. This has the advantage that all electrically conductive layers are provided with an electrical potential equalization and, for example, between several layers of electrically conductive material and electrically insulating material, no damage to the protective layer caused by a lack of electrical potential equalization occurs.

The invention also relates to a method for producing an individual mirror according to the invention. The method for producing the individual mirror according to the invention comprises, in a first method step, providing a mechatronic element according to the invention in accordance with the above-mentioned embodiments. A second, subsequent method step relates to coating at least one surface of the protective layer and/or a surface of a component of the mechatronic arrangement and/or the mechatronic element with a reflective coating, in particular one that reflects DUV and/or VUV and/or EUV radiation. In a further aspect of the invention, a coating method consists of a large number of individual steps, during each of which a layer of a defined physical, in particular optical, property is at least partially applied to a surface. The coating method is particularly suitable for coating a grid structure existing on the substrate and/or the protective layer with the inventive embodiments for the layer thickness and the surface roughness with a reflective coating, in particular one that reflects DUV and/or VUV and/or EUV radiation. The use of the method according to the invention has the advantage that a reflective optical element, in particular a mirror designed to reflect DUV and/or VUV and/or EUV radiation, is produced from a mechatronic element according to the invention, which has a protective layer according to the invention on at least one surface of a component of the individual mirror and within at least one cavity. In this way, a reflective optical element is produced according to the invention which meets the requirements for reflective optical elements within a semiconductor technology system in an improved form.

In a further variant of a method according to the invention, a coating step of at least one surface of the mechatronic arrangement with a coating reflecting DUV and/or VUV and/or EUV radiation takes place prior to the at least partial coating of the mechatronic arrangement with the protective layer.

In a further advantageous variant of a method according to the invention, at least one surface of an individual component of the mechatronic arrangement is coated with a DUV and/or VUV and/or EUV Radiation-reflecting coating prior to the manufacture of the mechatronic assembly.

In a further variant of a method according to the invention, a coating step of at least one surface of the mechatronic arrangement with a coating reflecting DUV and/or VUV and/or EUV radiation takes place between a first coating step of at least a part of the mechatronic arrangement and a second coating step of a further part of the mechatronic arrangement, wherein the first coating step and the second coating step comprise an at least partial coating of at least a part of the mechatronic arrangement with the protective layer.

Further features and advantages of the invention emerge from the following description of embodiments of the invention, based on the figures of the drawing, which show details essential to the invention, and from the claims. The individual features can be implemented individually or in groups in any combination in a variant of the invention.

Character list

• 1 a eine schematische Darstellung einer mechatronischen Anordnung (100').
• 1 b eine schematische Darstellung einer mechatronischen Anordnung (100') und relevanter Oberflächen.
• 1 c eine weitere schematische Darstellung der mechatronischen Anordnung (100') und relevanter Oberflächen.
• 1 d eine weitere schematische Darstellung der mechatronischen Anordnung (100') und relevanter Kavitäten.
• 1 e eine schematische Darstellung eines mechatronischen Elementes (100) mit einer Schutzschicht.
• 1 f eine weitere schematische Darstellung des mechatronischen Elementes (100) mit einer Schutzschicht und relevanter Oberflächen.
• 1 g eine weitere schematische Darstellung eines mechatronischen Elementes 100 mit einer Schutzschicht und relevanter Oberflächen.
• 2 Wirkungsweise einer Schutzschicht eines mechatronischen Elementes (100) gegen Komponenten eines Wasserstoffplasmas
• 3 Detailansicht eines mechatronischen Elementes mit einer Schutzschicht.
• 4 a eine schematische Darstellung eines Einzelspiegels (127), (128)
• 4 b eine weitere schematische Darstellung eines Einzelspiegels (127), (128)
• 5 a eine Detailansicht eines Einzelspiegels (127), (128)
• 5 b eine weitere Detailansicht eines Einzelspiegels (127), (128)
• 5 c eine weitere Detailansicht eines Einzelspiegels (127), (128)
• 5 d eine weitere Detailansicht eines Einzelspiegels (127), (128)
• 5 e eine weitere Detailansicht eines Einzelspiegels (127), (128)
• 5 f eine weitere Detailansicht eines Einzelspiegels (127), (128)
• 5 g eine weitere Detailansicht eines Einzelspiegels (127), (128)
• 6 eine schematische Darstellung eines Mikrospiegel-Arrays (200)
• 7 eine schematische Darstellung eines Facettenspiegels (300)
• 8 eine schematische Darstellung einer Anlage der Halbleitertechnologie (400) im Meridionalschnitt am Beispiel einer Projektionsbelichtungsanlage für die EUV- Halbleiterlithografie
• 9 schematisches Diagramm der Verfahrensschritte zur Herstellung eines mechatronischen Elementes (100)
• 10 schematisches Diagramm der Verfahrensschritte zur Herstellung eines Einzelspiegels (127), (128)

Embodiments are shown in the schematic drawings and are explained in the following description. It shows

• 1 a a schematic representation of a mechatronic arrangement (100').
• 1 b a schematic representation of a mechatronic arrangement (100') and relevant surfaces.
• 1c another schematic representation of the mechatronic arrangement (100') and relevant surfaces.
• 1 d another schematic representation of the mechatronic arrangement (100') and relevant cavities.
• 1 e a schematic representation of a mechatronic element (100) with a protective layer.
• 1 f a further schematic representation of the mechatronic element (100) with a protective layer and relevant surfaces.
• 1g another schematic representation of a mechatronic element 100 with a protective layer and relevant surfaces.
• 2 Mode of action of a protective layer of a mechatronic element (100) against components of a hydrogen plasma
• 3 Detailed view of a mechatronic element with a protective layer.
• 4 a a schematic representation of a single mirror (127), (128)
• 4 b another schematic representation of a single mirror (127), (128)
• 5 a a detailed view of a single mirror (127), (128)
• 5 b another detailed view of a single mirror (127), (128)
• 5c another detailed view of a single mirror (127), (128)
• 5 days another detailed view of a single mirror (127), (128)
• 5 e another detailed view of a single mirror (127), (128)
• 5 f another detailed view of a single mirror (127), (128)
• 5g another detailed view of a single mirror (127), (128)
• 6 a schematic representation of a micromirror array (200)
• 7 a schematic representation of a facet mirror (300)
• 8 a schematic representation of a semiconductor technology system (400) in meridional section using the example of a projection exposure system for EUV semiconductor lithography
• 9 schematic diagram of the process steps for producing a mechatronic element (100)
• 10 Schematic diagram of the process steps for producing a single mirror (127), (128)

Description of the drawings

1 (a) shows a schematic representation of a mechatronic arrangement (100') and its components. 1 (b) and 1 (c) each also show a schematic representation of the mechatronic arrangement (100') and its components, supplemented by relevant surfaces (107) - (119). 1 (d) also shows a schematic representation of the mechatronic arrangement (100') and its components supplemented by relevant cavities (132). The mechatronic arrangement (100') is always the basic element for a mechatronic element (100) according to the invention. 1 (d) shows an example of a schematic representation of a mechatronic element (100) and its components. 1 (f) shows a schematic representation of a mechatronic element (100) and its components, supplemented by relevant vant surfaces (107.3) and (108.3). 1 (g) shows a schematic representation of a mechatronic element (100) and its components, supplemented by relevant surfaces (107.4) and (108.4).

The mechatronic arrangement (100') comprises a substrate (101), a connecting element (102), an actuator system (103), and a base body (105). A connecting element (102) further comprises a joint with at least one joint base (133) and at least one joint structure (131). The mechatronic element (100) according to the invention is characterized in that the protective layer (106) is at least partially applied to at least one surface (107) - (119) and/or at least partially within at least one cavity (132).

In a variant of the invention, the protective layer (106) is also located between two of the components of the mechatronic arrangement (100'), for example between the base body (105) and the joint base (133).

In a further variant of the invention, the mechatronic arrangement (100') additionally comprises a sensor unit (104).

In a variant of the embodiment, the substrate (101) and/or the connecting element (102) and/or the actuator system (103) and/or the sensor unit (104) and/or the base body (105) contains silicon. In a preferred variant, the substrate (101) is, for example, a silicon wafer or a part of a silicon wafer which is produced using MEMS technology. The substrate (101) consists of amorphous, monocrystalline or polycrystalline silicon. In a further development of the invention, the substrate (105) and/or the connecting element (102) and/or the actuator system (103) and/or the sensor unit (104) and/or the base body (105) is, for example, made of silicon-containing quartz glass. In a further aspect of the invention, the quartz glass used is doped with titanium and/or with boron and/or with phosphorus and/or with scandium. In another variant, the quartz glass is a glass ceramic containing silicon.

In a further advantageous embodiment of the invention, the mechatronic element (100) is characterized in that the position of the substrate (101) in space and/or the orientation of the substrate (101) relative to a surface (114) of the base body (105) is adjusted by means of the actuator system (103) in at least one degree of freedom. To facilitate the explanation of positional relationships, a global Cartesian xyz coordinate system is used below, among other things, as in 1 (a) For example, the substrate (101) is mounted in such a way that a translational movement of the substrate (101) along the z-axis is carried out by means of the connecting element (102), starting from a rest position as the zero position of the connecting element (102), in positive z-displacements or negative z-displacements. The actuator system (103) acts on the substrate and/or the connecting element (102) and/or the base body (105) in such a way that the substrate (101) is moved along the z-axis. In an advantageous variant of this embodiment, the joint structure (131) is designed as a spring element or as a spring structure which, after a deflection of the connecting element (102) from its rest position, brings the connecting element (102) back into the rest position. In a further variant of this advantageous embodiment of the invention, the movement mediated via the joint structure (131) is damped, so that the substrate (101) cannot be set into vibration by a deflection of the joint structure (131).

In a further advantageous embodiment of the invention, the substrate (101) is designed to be tiltable by means of the joint structure (131). The substrate (101) is tilted in the x-direction and/or y-direction by the joint structure (131). At least one actuator system (103) acts on the substrate (101) and/or the connecting element (102) and/or the base body (105) in such a way that the substrate (101) is tilted in the x-direction and/or y-direction. The connecting element (102) also has a zero position for tilting the substrate (101) in the x-direction and in the y-direction, from which the substrate (101) is tilted by actuators to positive or negative values of the tilt. The tilting in the x-direction and in the y-direction has an advantageous damping and return of the deflection to the zero position, analogous to the translational movement in the z-direction and already discussed above.

In a further advantageous variant of the invention, the translational movement of the substrate (101) in the z-direction and the tilting movement of the substrate (101) in the x-direction and y-direction are combined with one another, so that a high degree of adjustability of the position and orientation of the substrate (101) in three-dimensional space is provided.

The sensor unit (104), which contains at least one sensor, measures at least one chemical and/or physical property of the actuator system (103) and/or the substrate (101). In a first variant of this advantageous embodiment, the corresponding sensor unit (104) measures the deflection or tilting of the sub strates (101) relative to the corresponding rest positions or zero positions in the x-direction and/or in the y-direction and/or in the z-direction and passes the information on to an evaluation unit via a line unit (130). The latter is in the 1 not shown for the sake of clarity. In a special variant of this embodiment according to the invention, a sensor unit (104) comprises an orientation sensor. In further special variants of this embodiment according to the invention, the sensor unit (104) contains a capacitive sensor, or a temperature sensor, or a pressure sensor. The sensor unit (104) is not limited to the use of exactly one of the sensor types described, but in a further variant comprises a combination of a large number of different sensor types. In principle, other sensor types are also conceivable, in particular optical sensors.

In special variants of the invention, the surface (107) of the substrate (101) is planar, convex-curved, concave-curved, or designed as a free-form surface. In an additional aspect of the invention, in a special embodiment, the surface (107) of the substrate (101) has a structure, for example in the form of a pseudo-two-dimensional grating, in particular in the form of a diffraction grating.

The outer contour of such substrates (101) is not geometrically limited. In a further variant of the invention, the outer contour of the substrate (101) is, for example, polygonal, in particular trigonal, tetragonal, pentagonal, hexagonal, heptagonal, octagonal, or with a higher number of points, and the edge lengths of the side edges of the polygonal structure of the substrate (101) are of equal length. In a further variant of the invention, the edge lengths of the side edges of the polygonal structure of the substrate (101) are at least partially of unequal length. In a further variant of the invention, the outer contour of the substrate (101) is round or oval. In each of the embodiments, one or more edges of the substrate (101) can have a curved contour. In further variants, tetragonal contours are designed in particular as squares or as rectangles. In a further variant of the invention, the outer contour of the substrate (101) is round or oval. In a further variant of the invention, the contour of the substrate (101) is designed as a freeform.

According to the invention, the protective layer (106) has an average layer thickness in the range 10-1000 nm, preferably 30-300 nm, more preferably 50-150 nm with a layer thickness error of at most 1 nm.

According to the invention, the surface (107.3) of the protective layer (106) and/or the surface (107.1) of the substrate (101) have a surface roughness in the range 80 - 500 pm with a standard deviation of at most 20 pm.

In a further variant of the invention, the protective layer (106) is amorphous, crystalline, or partially crystalline. In this embodiment, the previously mentioned surface roughness can be easily achieved.

Furthermore, in a further embodiment, the electrical conductivity of the protective layer (106) is adjusted by doping in a range of 10 ^-2 - 10 ^-4 S, wherein the conductivity is adjusted by a suitable choice of the coating parameters in a suitable step of a coating process.

In a preferred embodiment of the invention, as in 2 shown in a schematic representation, a mechatronic element (100) characterized in that the protective layer (106) is stable against chemical reactions with a hydrogen plasma and its components (120) and (121) and/or DUV, and/or VUV and/or EUV radiation (123) and/or temperatures > 473 K. For the sake of clarity, the connecting element (102), the actuator system (103), and the sensor unit (104) are in comparison to the 1 (a) - (g) simplified. A 1 However, the embodiment of the named components applies to all further embodiments of the following figures from 2 analogue.

The hydrogen plasma comprises gaseous ions, for example H ₂ ⁺ , H ₃ ⁺ , etc., free protons, free electrons, and/or free radicals (H, H ₂ ·, etc.) and is generated in an environment with a negative pressure of hydrogen gas or even a vacuum compared to standard conditions. Such components of a hydrogen plasma are reactive towards many chemical materials, in particular silicon, and attack these materials reactively. Chemical dissolution processes or etching processes, chemical restructuring or reorganization of materials, and accumulation and/or storage processes occur on and/or in the attacked materials and/or their surfaces.

In a variant of this embodiment, the protective layer (106) is impermeable to all components of a hydrogen plasma.

In a further embodiment, the hydrogen plasma contains other components, such as noble gas atoms, or other molecular compounds compounds such as nitrogen. If further components are present in the hydrogen plasma environment, the further components also react with the reactive components (120) and the components (121) of the hydrogen plasma, from which further reactive components are also formed. In this variant of the embodiment, the protective layer (106) is also resistant to these further reactive components.

The protective layer (106) acts as a physical and/or chemical barrier against the reactive components (120) and components (121) of the hydrogen plasma and ensures their dimensional stability and chemical stability and integrity.

In a variant of the invention, the plasma is induced by laser-mediated vaporization of metal clusters and droplets, in particular tin, in a hydrogen environment. This produces spectrally different and intensified radiation emissions whose wavelengths lie, among other things, in the spectral range of DUV and/or VUV and/or EUV radiation (123) (5 - 300 nm). This radiation generates a hydrogen plasma from gaseous hydrogen. The corresponding DUV and/or VUV and/or EUV radiation (123) acts on all materials located in the area of effect of the hydrogen plasma, and accordingly also on the protective layer (106). Due to the effect of the DUV and/or VUV and/or EUV radiation (123) on the protective layer (106), the DUV and/or VUV and/or EUV radiation (123) can be absorbed by the protective layer (106), which leads to thermal dissipation of the introduced radiation energy and/or ionization of the chemical components of the protective layer (106) during electronic excitation of the protective layer (106). For this reason, the protective layer (106) is advantageously designed to be stable against the influences of the conditions prevailing at the site of action of the DUV and/or VUV and/or EUV radiation (123). Since electronic excitation by DUV and/or VUV and/or EUV radiation (123) in the range 5 - 300 nm is not completely excluded by any known material and therefore the effect of the DUV and/or VUV and/or EUV radiation (123) on the protective layer (106) inevitably results in a thermal dissipation process of the introduced radiation energy, the material of the protective layer (106) is advantageously designed to be resistant to temperatures greater than 473 K, in particular to temperatures in the range 473 - 2500 K, further in particular to temperatures in the range 473 - 1500 K, further in particular to temperatures in the range 473 - 800 K.

3 shows a schematic representation of a further advantageous embodiment of the invention in which the mechatronic element (100) comprises a protective layer (106). For the sake of clarity, only a part of the mechatronic element (100) is shown as an example, namely the base body (105) with the surface (114.1), the surface (114.2), and the surface (115.1), to each of which a coating (106) is applied. There are a large number of variants of this embodiment, which are defined below. It is understood that the person skilled in the art can combine the individual variants of the embodiment completely or only in part.

In a first variant of this embodiment, coatings (106) analogous to the surfaces (114.1), (114.2) and (115.1) are also at least partially located on at least one of the surfaces (107) - (119). In the variant of the embodiment shown, the protective layer consists of a repeatedly repeating sequence of alternating layers of a first electrically conductive material (124) and a second electrically insulating material (125). The first layer of the protective layer (106), viewed from the base body (105), is a layer of electrically insulating material (125). The subsequent layer with a greater distance from the base body (105) is a layer of electrically conductive material (124). The described sequence of a sequence of electrically conductive material (124) and electrically insulating material (125) is then repeated in this variant of the embodiment with an increasing distance from the base body (105). The number of sequences is not limited according to the invention. In an advantageous variant of the invention, the number of sequences is a maximum of 30, in particular a maximum of 20, more particularly a maximum of 10. In one aspect of this variant, the mechatronic element (100) is constructed sequentially from the individual components and a protective layer (106) in each case, whereby a protective layer (106) is present between the components of the mechatronic element (100), for example on the surface (118.2) or on the surface (112.2), etc.

In a further variant of the embodiment, the first layer of the protective layer (106) as seen from the base body (105) is a layer of electrically insulating material (125).

In a further variant of the embodiment, the first layer of the protective layer (106) as seen from the base body (105) is a layer of electrically conductive material (124).

In a further variant of this embodiment, the protective layer (106) consists of exactly one layer of electrically insulating material (125) or one layer of electrically conductive material (124).

In a further variant of this embodiment, the protective layer (106) consists of exactly two consecutive layers of different material, i.e. a layer of electrically insulating material (125) and a layer of electrically conductive material (124). The first layer, as seen from the base body, can be either the layer of electrically insulating material (125) or the layer of electrically conductive material (124).

In a further variant of this embodiment, a uniformly designed protective layer (106) with the same number and sequence of layers of electrically conductive material (124) and/or layers of electrically insulating material (125) is located on all surfaces (107) - (119).

In a further variant of this embodiment, a protective layer (106) with a different number and a different sequence of layers of electrically conductive material (124) and/or electrically insulating material (125) is located on at least two of the surfaces (107) - (119).

In a further variant of this embodiment, there is at least partially no protective layer (106) on at least one surface (107) - (119). In particular, in this variant of the embodiment, there is at least partially no protective layer (106) between two parts of the mechatronic element (100), for example on the surface (114.1), the surface (112.2), the surface (107.2), the surface (111.2), the surface (118.1) or the surface (118.2). Further in particular, in this variant of this embodiment, there is no protective layer (106) on the surface (107.1).

In an additional aspect of this variant, a protective layer (106) continues at least partially on at least one surface (108.1) and/or (108.2) adjacent to the surface (107.1), the extension of the protective layer (106) having an extent of up to 10 micrometers. Furthermore, in particular, in this variant of this embodiment, there is at least partially no protective layer (106) on the surface (108.1) and/or (108.2).

The compositions of the layers of electrically conductive material (124) and electrically insulating material (125) are selected according to the invention such that the prevailing layer stresses at least partially compensate each other. In a further variant of the embodiment, an additional layer of a material with a targeted stress-compensating effect can be introduced into the protective layer (106).

In a further variant of the embodiment, the protective layer (106) of the mechatronic element (100) is grounded with a grounding element (129). For this purpose, as in 3 shown, an electrical conductor, for example a cable, is integrated into a layer of electrically conductive material (124) and electrically conductively connected to the protective layer (106), which is designed for an electrical charge balance of the protective layer (106) with a mass of the grounding element (129). In the variant of the embodiment shown, a corresponding conducting element for electrical current is integrated into each layer of electrically conductive material (124).

In a further variant of the embodiment, a corresponding line element is connected to several layers of electrically conductive material (124) in such a way that an electrical charge balance is formed between all layers of electrically conductive material (124) and a mass of the grounding element (129).

According to the invention, each layer of electrically conductive material (124) and/or each layer of electrically insulating material (125) has a layer thickness of 1 - 100 nm with a layer thickness error of 1 nm.

The layer of electrically conductive material (124) comprises one of the elements of groups 3-6 and/or groups 8-11 and/or Re.

In a further embodiment, the layer of electrically conductive material (124) consists of an alloy of two, three or more of the above-mentioned elements with adjustable stoichiometric ratios. The physical and/or chemical properties of the protective layer (106), in particular the electrical conductivity, are defined by the stoichiometric composition of the layer of electrically conductive material (124) and are adjusted via this during a coating process.

The layer of electrically insulating material (125) consists of a ceramic material and/or comprises oxides or nitrides. In particular, the layer of electrically insulating material (125) contains compounds of the composition AlO _x , Al _x O _y and/or Ti _x O _y , where x and y are stoichiometric factors.

4 shows in a schematic representation an embodiment of an inventive ßen single mirror (127), which comprises a previously described mechatronic element (100) according to the invention. Again, for the sake of clarity, the connecting element (102), the actuator system (103), and the sensor unit (104) are shown in comparison to the 1 (a) - (g) shown in simplified form. The individual mirror (127) comprises a reflective coating (126), in particular one which reflects DUV and/or VUV and/or EUV radiation (123). Analogous to the embodiments of the 3 a multitude of variants of this embodiment of the individual mirror (127), which are defined below. It is understood that here too the person skilled in the art can combine the variants of the embodiment of the previously described mechatronic element (100), completely or only in part, with the individual variants of the applied reflective coating (126) in order to arrive at an individual mirror (127) according to the invention.

In a 4 (a) In the first variant of the embodiment shown, the coating (126) is applied to the surface (107.3).

In a further variant of the embodiment, the coating (126) is applied to the surface (107.4).

In a 4 (b) In the further variant of the embodiment shown, the coating (126) is additionally at least partially applied to the surface (108.3).

In a further variant of the embodiment, the coating (126) is applied at least partially to the surface (108.4) in addition to the coating (126) on the surface (107.4).

Further advantageous variants of the embodiment of the single mirror (127) are described in 5 (a) - (g). For simplicity, in 5 only the substrate (101) is shown as part of the mechatronic element (100).

In 5 (a) a first variant of a preferred embodiment of the individual mirror (127) is shown schematically in a simplified form. In this variant, the reflective coating (126) is applied to the surface (107.3) or the surface (107.4) of the protective layer (106). The protective layer (106) is made up of a multilayer of individual layers, whereby in the variant shown, two individual layers form a layer of electrically conductive material (124) and two individual layers form a layer of electrically insulating material (125). As in the course of the 3 and the 4 As described above, the protective layer (106) and the reflective coating (126) can also be designed in another described variant.

In a further variant of the embodiment, as in 5 (b) shown, the individual mirror (127) is characterized in that the reflective coating (126) is applied to the surface (107.1) of the substrate.

In a further variant of the embodiment, as in 5 (c) shown, the individual mirror (127) is characterized in that the reflective coating (126) is applied to the surface (107.1) of the substrate and at least partially also to the surfaces (108.1). The parts of the reflective coating (126) applied to the surfaces (108.1) are at least partially covered on one surface (108.5) by the protective layer (106).

In a further variant of the embodiment, as in 5 (d) shown, the individual mirror (127) is characterized in that the reflective coating (126) is applied to the surface (107.1) of the substrate and also at least partially to the parts of a protective layer (106) located on the surfaces (108.1). As a result, the parts of the protective layer (106) applied to the surfaces (108.1) are at least partially covered on the surface (108.3) or the surface (108.4) by the reflective coating (126).

In a further variant of the embodiment, as in 5 (e) shown, the individual mirror (127) is characterized in that the reflective coating (126) is applied to the surface (107.1) and to the surface (108.1) of the substrate.

In a further variant of the embodiment, as in 5 (f) shown, the individual mirror (127) is characterized in that the reflective coating (126) is applied to the surface (107.1) and the protective layer (106) is applied to the surface (134). In this variant, the protective layer (106) functions both as a protective layer for the components of the mechatronic element (100) and for the reflective coating (126).

In a further variant of the embodiment, as in 5 (g) shown, the individual mirror (127) is characterized in that the reflective coating (126) is applied to the surface (107.1) and to the surface (108.1). In this variant, the protective layer (106) is applied both to the surface (134) and to the surface (108.5).

In all variants of the embodiments according to the invention, the surface (107.1) and/or the surface (107.3) have a surface roughness in the range 80 - 500 pm with a standard deviation of at most 20 pm.

In the variants shown, the reflective coating (126) is made up of a plurality of alternating layers, each with different physical properties, in particular optical properties, for example differences in refractive index. In one aspect of the invention, the reflective coating (126) is made up of alternating layers of molybdenum and silicon, so that the reflective coating (126) is designed as an EUV light-reflecting coating for light in the spectral range between 5 - 30 nm, in particular at 13.5 nm. In a further aspect of the invention, the number of individual layers of the reflective coating (126) is a maximum of 100, in particular a maximum of 70, further in particular a maximum of 50.

According to the invention, the outer contour and the optical surface (134) of the individual mirror (127), taking into account the protective layer (106) and the reflective coating (126) that additionally contribute to the structure, take on the same design forms as the variants already previously discussed for the structure of the substrate (101). In a special variant of the invention, a grating structure, for example, diffracts different spectral components of an incident light incident on the individual mirror (127), for example the DUV and/or VUV and/or EUV radiation (123) to be reflected, in defined spatial directions and thus allows a spatial spectral separation of the incident spectral components. In a further specific variant of the invention, a grating structure diffracts IR radiation incident on the individual mirror (127) in a further defined spatial direction in addition to the DUV and/or VUV and/or EUV radiation (123) in the same direction and thus allows a spatial spectral separation of the IR radiation from the DUV and/or VUV and/or EUV radiation (123).

In the case of the reflective coating (126) applied to the surface (107), the protective layer (106) and the reflective coating (126) are contacted in such a way that the substrate (101) is completely covered. If different areas of the protective layer (106) are not electrically connected to one another, as indicated in the figure, a separate grounding element (129) is installed for each independently electrically conductive area of the protective layer (106). In a further variant of the embodiment, the different, independently electrically conductive areas of the protective layer (106) are connected to the same grounding element (129) via separate line elements, for example cables.

In 6 is a schematic representation of an embodiment of a micromirror array (200) according to the invention. The first embodiment of a micromirror array (200) according to the invention comprises at least one first individual mirror (127) according to the invention as described above, and a second individual mirror (128) according to the invention as described above. The micromirror array (200) according to the invention is characterized in that, taking into account the maximum ranges of movement of all axes of movement of the actuator systems (103), the first individual mirror (127) and the second individual mirror (128) are adjustable independently of one another in every degree of freedom adjustable by an actuator system (103), and are arranged contactlessly with one another, and are also arranged to form an approximately gap-free arrangement of reflective coatings (126). An approximately gap-free arrangement of the individual mirrors (127, 128) is defined, taking into account the maximum ranges of movement of all axes of movement of the actuator system (103), such that a micromirror array (200) according to the invention has a fill level of at least 80%, preferably at least 90%, more preferably at least 95%, particularly preferably at least 98%. This means that the sum of the areas of the areas of the reflective coating (126) of all tiltable individual mirrors (127, 128) intended for reflecting DUV and/or VUV and/or EUV radiation (123) makes up a corresponding proportion of the total area of the micromirror array (200). This in turn means that the gaps between the individual mirrors (127, 128) have a maximum width of at most 100 µm, preferably at most 50 µm, more preferably at most 20 µm, particularly preferably at most 10 µm.

In the shown variant of the 6 the outer contour of the individual mirrors (127, 128) is tetragonal and the edge lengths of the side edges of the tetragonal structure are the same length. In further variants of this embodiment of the invention, the contours of the individual mirrors (127, 128) are designed according to the embodiments already described above. In a special variant of the invention, the individual mirrors (127, 128) have different counts and/or edge lengths of the polygonal structures of the contours.

In the shown variant of the 6 the invention, the outer contour of a micromirror array (200) is tetragonal and the edge lengths of the sides edges of the tetragonal structure are of equal length. In further embodiments of the invention, the outer contour of a micromirror array (200) is curved, ring-shaped, circular, oval-shaped, or even polygonal. In special variants of the invention, the outer polygonal contour of the micromirror array (200) is in particular trigonal, tetragonal, pentagonal, hexagonal, heptagonal, octagonal, or higher, wherein the edge lengths of the side edges are of equal length or of different lengths.

In a further aspect of the invention, the surfaces (134) of the individual mirrors (127, 128) have the same design. In a further aspect of the invention, the surfaces (134) of the individual mirrors (127, 128) have different design shapes.

In a further embodiment of the invention, the areas of the reflective coating (126) of all actuatable individual mirrors (127, 128) intended for reflecting DUV and/or VUV and/or EUV radiation (123) are arranged next to one another without offset in the z direction of a Cartesian coordinate system. This forms a quasi-continuous surface of the micromirror array (200) that reflects DUV and/or VUV and/or EUV radiation (123), which is only interrupted by the gaps between the individual mirrors (127, 128).

In particular, such a variant relates to the rest position as the zero position of the connecting element (102), in which all actuatable individual mirrors (127, 128) are lined up without offset in the z-direction of a Cartesian coordinate system.

The base bodies (105) of the individual mirrors (127, 128) of the micromirror array (200) are in the special embodiment of the 6 arranged in a common plane, ie the individual mirrors are in a coplanar position. In further variants of the invention, the base bodies (105) of the individual mirrors (127, 128) of the micromirror array form a non-coplanar arrangement, in particular a pseudo-concave arrangement, or a pseudo-convex arrangement, or an arrangement designed according to a free-form surface.

In 7 is a schematic representation of an embodiment of a facet mirror (300) according to the invention, wherein the facet mirror (300) comprises at least one first micromirror array (200) as described above and at least one second micromirror array (201) as described above, as well as a base body (301). According to the invention, the base body includes all electrical and/or pneumatic supply lines, signal lines and their connections required for the operation of the micromirror arrays (200, 201), as well as mechanical components for mounting, adjusting and operating the facet mirror and its integration for intended use. A facet mirror (300) according to the invention is further characterized in that the first micromirror array (200) and the second micromirror array (201) are fixed on the base body (301) and form an overall reflection surface for actuator-controlled reflection of DUV and/or VUV and/or EUV radiation (123). In a first embodiment of the invention, the surfaces (134) of the individual mirrors (127, 128) of the micromirror arrays (200, 201) are lined up next to one another without offset, so that a quasi-continuous surface is formed, interrupted only by gaps between the individual mirrors (127, 128) of the micromirror array (200, 201) and by the gaps between the individual micromirror arrays (200, 201).

The facet mirror (300) according to the invention is further characterized in that, as described above, each first individual mirror (127) and each second individual mirror (128) of each micromirror array (200, 201) can be adjusted independently of one another in each degree of freedom that can be adjusted by an actuator system (103). In a special variant of the invention, the first micromirror array (200) and the second micromirror array (201) are arranged in a contactless manner with respect to one another and are also arranged to form an approximately gap-free arrangement of reflective coatings (126). An approximately gap-free arrangement of reflective coatings (126) is defined, taking into account the maximum ranges of movement of all axes of movement of the actuator system (103) of all individual mirrors (127, 128), such that a facet mirror (300) according to the invention has a fill level of at least 80%, in particular at least 90%, in particular at least 95%, in particular at least 98%. This means that the sum of the areas of the areas of the reflective coating (126) of all tiltable individual mirrors (127, 128) of the facet mirror (300) intended for reflecting DUV and/or VUV and/or EUV radiation (123) makes up a corresponding proportion of the total area of the facet mirror (300). This in turn means that the gaps between the micromirror arrays (200, 201) have a maximum width of at most 100 µm, in particular at most 50 µm, in particular at most 20 µm, in particular at most 10 µm.

In a further aspect of the invention, the micromirror arrays (200, 201) of the facet mirror (300) have the same shape and size. In a specific aspect of the invention, the Micromirror arrays (200, 201) of the facet mirror (300) have different shapes and/or sizes designed in accordance with the above statements. In the named variants of the invention, therefore, polygonal, round, oval or externally contoured free-form facet mirrors are realized.

In 8 a schematic representation of the use of a mechatronic element (100) as part of a facet mirror (300) according to the invention within a semiconductor technology system (400) is shown. A projection exposure system is shown as an example of a semiconductor technology system (400). The facet mirror (300) is designed as a mirror M3-M4 for reflecting radiation, in particular EUV radiation. In a further embodiment of the invention, a semiconductor technology system (400) is a wafer inspection system. In a further embodiment of the invention, a semiconductor technology system (400) is a mask inspection system. The semiconductor technology system (400) is characterized in that a mechatronic element (100) is designed as part of a facet mirror (300) and, as part of an illumination system (401), guides DUV and/or VUV and/or EUV radiation (123) from a radiation source (402) to a reticle (406).

It is understood that the use of the mechatronic element (100) as part of a facet mirror (300) is not limited to a use of the mechatronic element (100) within a semiconductor technology system (400).

In the following, and with reference to the 8 The essential components of a system for semiconductor technology (400) are described using the example of a projection exposure system for microlithography.

One embodiment of an illumination system (401) of the projection exposure system has, in addition to a radiation source (402), an illumination optics (403) for illuminating an object field (404) in an object plane (405). In an alternative embodiment, the light source (402) can also be provided as a separate module from the rest of the illumination system. In this case, the illumination system does not comprise the light source (402).

A reticle (406) arranged in the object field (404) is illuminated. The reticle (406) is held by a reticle holder (407). The reticle holder (407) can be displaced via a reticle displacement drive (408), in particular in a scanning direction.

In the 8 For explanation purposes, a Cartesian xyz coordinate system is shown. The x-direction runs perpendicular to the drawing plane. The y-direction runs horizontally and the z-direction runs vertically. The scanning direction runs in the 8 along the y-direction. The z-direction is perpendicular to the object plane 405.

The projection exposure system comprises a projection optics (409). The projection optics (409) are used to image the object field (404) into an image field (410) in an image plane (411). The image plane (411) runs parallel to the object plane (405). Alternatively, an angle other than 0° between the object plane (405) and the image plane (411) is also possible.

A structure located on the reticle (406) is imaged onto a light-sensitive layer of a substrate 412 arranged in the image plane (411) in the region of the image field (410). This substrate (412) is usually a wafer. The wafer (412) is held by a wafer holder (413). The wafer holder (413) can be displaced via a wafer displacement drive (414), in particular along the y-direction. The displacement of the reticle (406) on the one hand via the reticle displacement drive (408) and the wafer (412) on the other hand via the wafer displacement drive (414) can be synchronized with one another.

The radiation source (402) is an EUV radiation source. The radiation source (402) emits in particular EUV radiation (415), which is also referred to below as useful radiation, illumination radiation or illumination light. The useful radiation has in particular a wavelength in the range between 5 nm and 30 nm. The radiation source (402) can be a plasma source, for example an LPP source (laser produced plasma, plasma generated using a laser) or a DPP source (gas discharged produced plasma, plasma generated by means of gas discharge). It can also be a synchrotron-based radiation source. The radiation source (402) can be a free-electron laser (FEL).

The illumination radiation (415) emanating from the radiation source (402) is bundled by a collector (416). The collector (416) can be a collector with one or more ellipsoidal and/or hyperboloidal reflection surfaces. The at least one reflection surface of the collector (416) can be in grazing incidence (GI), i.e. with angles of incidence greater than 45° with respect to the normal direction of the mirror surface, or in normal incidence (NI), i.e. with incidence angles smaller than 45°, with the illumination radiation (415). The collector (416) can be structured and/or coated on the one hand to optimize its reflectivity for the useful radiation and on the other hand to suppress stray light.

After the collector (416), the illumination radiation (415) propagates through an intermediate focus in an intermediate focal plane (417). The intermediate focal plane (417) can represent a separation between a radiation source module, having the radiation source (402) and the collector 416, and the illumination optics (403).

The illumination optics (403) comprise a deflection mirror (418) and a first facet mirror 419 arranged downstream of this in the beam path. The deflection mirror (418) can be a flat deflection mirror or alternatively a mirror with a beam-influencing effect beyond the pure deflection effect. Alternatively or additionally, the deflection mirror (418) can be designed as a spectral filter that separates a useful light wavelength of the illumination radiation (415) from stray light of a different wavelength. If the first facet mirror (419) is arranged in a plane of the illumination optics (403) that is optically conjugated to the object plane (405) as a field plane, it is also referred to as a field facet mirror. The first facet mirror (419) comprises a plurality of individual first facets (420), which are also referred to below as field facets. Of these facets (420), only one is shown in the 8 only a few examples are shown.

The first facets (420) can be designed as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or partially circular edge contour. The first facets (420) can be designed as flat facets or alternatively as convex or concave curved facets.

As for example from the [ EN 10 2008 009 600 A1 ], the first facets (420) themselves can also be composed of a plurality of individual mirrors, in particular a plurality of micromirrors. The first facet mirror (419) can in particular be designed as a microelectromechanical system (MEMS system). For details, see [ EN 10 2008 009 600 A1 ] .

Between the collector (416) and the deflection mirror (418), the illumination radiation (415) runs horizontally, i.e. along the y-direction.

A second facet mirror 421 is arranged downstream of the first facet mirror (419) in the beam path of the illumination optics (403). If the second facet mirror (421) is arranged in a pupil plane of the illumination optics (403), it is also referred to as a pupil facet mirror. The second facet mirror (421) can also be arranged at a distance from a pupil plane of the illumination optics (403). In this case, the combination of the first facet mirror (419) and the second facet mirror (421) is also referred to as a specular reflector.

Specular reflectors are known from the [2006/0132747 A1 ], the [ EP 1 614 008 B1 ] and the [ US$6,573,978 ].

The second facet mirror (421) comprises a plurality of second facets (422). In the case of a pupil facet mirror, the second facets (422) are also referred to as pupil facets.

The second facets (422) can also be macroscopic facets, which can be round, rectangular or hexagonal, for example, or alternatively facets composed of micromirrors. In this regard, reference is also made to [ EN 10 2008 009 600 A1 ] .

The second facets (422) may have planar or alternatively convex or concave curved reflection surfaces.

The illumination optics (403) thus form a double faceted system. This basic principle is also called a honeycomb condenser (Fly's Eye Integrator).

It may be advantageous not to arrange the second facet mirror (421) exactly in a plane that is optically conjugated to a pupil plane of the projection optics (409). In particular, the pupil facet mirror (421) can be arranged tilted relative to a pupil plane of the projection optics (409), as is shown, for example, in [ EN 10 2017 220 586 A1 ] is described.

The individual first facets (420) are imaged into the object field (404) with the help of the second facet mirror (421). The second facet mirror (421) is the last bundle-forming or actually the last mirror for the illumination radiation (415) in the beam path in front of the object field (404).

In a further embodiment of the illumination optics (403) not shown, a transmission element can be arranged in the beam path between the second facet mirror (421) and the object field (404). optics can be arranged, which in particular contributes to the imaging of the first facets (420) in the object field (404). The transmission optics can have exactly one mirror, but alternatively also two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics (403). The transmission optics can in particular comprise one or two mirrors for normal incidence (NI mirrors, normal incidence mirrors) and/or one or two mirrors for grazing incidence (GI mirrors, grazing incidence mirrors).

The projection exposure system comprises a plurality of mirrors Mi, which are numbered according to their arrangement in the beam path of the projection exposure system.

The illumination optics (403) has in the version shown in the 8 As shown, after the collector (416) (M1) there are exactly three mirrors, namely the deflection mirror (418) (M2), the field facet mirror (419) (M3) and the pupil facet mirror (421) (M4).

In a further embodiment of the illumination optics (403), the deflection mirror (418) can also be omitted, so that the illumination optics (403) after the collector (416) can then have exactly two mirrors, namely the first facet mirror (419) and the second facet mirror (421).

The imaging of the first facets (420) by means of the second facets (422) or with the second facets 12 and a transmission optics into the object plane (405) is usually only an approximate imaging.

In the 8 In the example shown, the projection optics (409) comprises six mirrors M6 to M11. Alternatives with four, eight, ten, twelve or another number of mirrors Mi are also possible. The penultimate mirror M10 and the last mirror M11 each have a passage opening for the illumination radiation 415. The projection optics (409) are doubly obscured optics. The projection optics (409) have a numerical aperture on the image side that is greater than 0.5 and can also be greater than 0.6 and can be, for example, 0.7 or 0.75.

Reflection surfaces of the mirrors Mi can be designed as free-form surfaces without a rotational symmetry axis. Alternatively, the reflection surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one rotational symmetry axis of the reflection surface shape. The mirrors Mi, just like the mirrors of the illumination optics (403), can have highly reflective coatings for the illumination radiation (415). These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.

The projection optics (409) have a large object-image offset in the y-direction between a y-coordinate of a center of the object field (404) and a y-coordinate of the center of the image field (410). This object-image offset in the y-direction can be approximately as large as a z-distance between the object plane (405) and the image plane 411.

The projection optics (409) can in particular be anamorphic. In particular, it has different image scales βx, βy in the x and y directions. The two image scales βx, βy of the projection optics (409) are preferably (βx, βy) = (+/- 0.25, +/- 0.125). A positive image scale β means an image without image inversion. A negative sign for the image scale β means an image with image inversion.

The projection optics (409) thus leads to a reduction in the ratio 4:1 in the x-direction, i.e. in the direction perpendicular to the scanning direction.

The projection optics (409) leads to a reduction of 8:1 in the y-direction, i.e. in the scanning direction.

Other image scales are also possible. Image scales with the same sign and absolutely the same in the x and y directions, for example with absolute values of 0.125 or 0.25, are also possible.

The number of intermediate image planes in the x and y directions in the beam path between the object field (404) and the image field (410) can be the same or can be different depending on the design of the projection optics 409. Examples of projection optics with different numbers of such intermediate images in the x and y directions are known from [ US 2018/0074303 A1 ].

Each of the pupil facets (422) is assigned to exactly one of the field facets (420) to form an illumination channel for illuminating the object field (404). This can result in particular in illumination according to the Köhler principle. The far field is broken down into a plurality of object fields (404) using the field facets (420). The field facets (420) generate a plurality of images of the intermediate focus on the pupil facets 422 assigned to them.

The field facets (420) are each superimposed by an associated pupil facet (422) to illuminate the object field 14 imaged onto the reticle (406). The illumination of the object field (404) is in particular as uniform as possible. It preferably has a uniformity error of less than 2%. The field uniformity can be achieved by superimposing different illumination channels.

By arranging the pupil facets, the illumination of the entrance pupil of the projection optics (409) can be defined geometrically. By selecting the illumination channels, in particular the subset of the pupil facets that guide light, the intensity distribution in the entrance pupil of the projection optics (409) can be set. This intensity distribution is also referred to as the illumination setting.

A likewise preferred pupil uniformity in the region of defined illuminated sections of an illumination pupil of the illumination optics (403) can be achieved by a redistribution of the illumination channels.

In the following, further aspects and details of the illumination of the object field (404) and in particular the entrance pupil of the projection optics (409) are described.

The projection optics (409) can in particular have a homocentric entrance pupil. This can be accessible. It can also be inaccessible.

The entrance pupil of the projection optics (409) cannot usually be illuminated precisely with the pupil facet mirror (421). When the projection optics (409) telecentrically images the center of the pupil facet mirror (421) onto the wafer (412), the aperture rays often do not intersect at a single point. However, a surface can be found in which the pairwise determined distance of the aperture rays is minimal. This surface represents the entrance pupil or a surface conjugated to it in spatial space. In particular, this surface shows a finite curvature.

It is possible that the projection optics (409) have different positions of the entrance pupil for the tangential and the sagittal beam path. In this case, an imaging element, in particular an optical component of the transmission optics, should be provided between the second facet mirror (421) and the reticle (406). With the help of this optical element, the different positions of the tangential entrance pupil and the sagittal entrance pupil can be taken into account.

In the 8 In the arrangement of the components of the illumination optics (403) shown, the pupil facet mirror (421) is arranged in a surface conjugated to the entrance pupil of the projection optics (409). The field facet mirror (419) is arranged tilted to the object plane (405). The first facet mirror (419) is arranged tilted to an arrangement plane that is defined by the deflection mirror (418).

The first facet mirror (419) is arranged tilted to an arrangement plane which is defined by the second facet mirror (421).

It is possible that the mirrors M1-M11 are designed as reflective optical elements which are tempered by means of at least one channel. The individual mechatronic elements can also be designed in such a way that each individual mechatronic element can be tempered. In this case, the mirrors M1-M11 include tempering devices (423-433). In this case, one of the tempering devices (423-433) can be assigned to one of the elements M1-M11. It is also possible that one of the tempering devices (423-433) is used to temper more than one mirror. In this case, the required number of tempering devices (423-433) is reduced accordingly. The tempering devices (423-433) can be designed in such a way that a fluid flowing in the at least one channel (408) is tempered.

Tempering can be a cooling process. Tempering can also be a heating process. The fluid used to temper the mirrors M1-M11 can be water, in particular highly pure water with a conductivity of < 0.1 uS/cm.

The temperature control devices (423-433) can comprise sensors that measure a temperature of the fluid flowing through the at least one channel (408) during operation of the projection exposure system and regulate the temperature of the fluid to a set target value via an integrated control system of the temperature control devices (423-433). The temperature control devices (423-433) can additionally contain sensors for measuring temperatures at positions on the reflective surface of the mirrors M1-M11 or in the vicinity of the reflective surface of the mirrors M1-M11. In addition, the temperature control devices (423-433) can comprise various other sensors that determine, for example, the quality of the flowing fluid via conductivity measurements of the fluid, via pH value measurements of the fluid, or via spectroscopic measurements on the fluid. In addition, sensors can be used which measure the flow rate of the fluid. In addition, sensors can be used to measure the pressure of the fluid. For all sensors contained in the temperature control devices (423-433) 8 Signal line units and evaluation units not explicitly shown are used.

9 shows a diagram of a method according to the invention for producing a mechatronic element (100). In a first step (S1) of the method, at least one component of the mechatronic arrangement (100'), in particular of the base body (105) and/or the actuator system (103) and/or the connection unit (102) and/or the substrate (101), is provided. In a variant of the method, a sensor unit (104) is also provided. In a second method step (S2), the mechatronic arrangement (100') is produced from the at least one component (101-105). In a third step (S3), the mechatronic arrangement (100') is at least partially coated with a protective layer (106) on at least one surface (107) - (119) and/or within at least one cavity (132).

In a variant of the method according to the invention, the substrate (101) and/or the connecting element (102) and/or the actuator system (103) and/or the sensor unit (104) and/or the base body (105) are provided individually in a first method step (S1). The second method step (S2) and the third method step (S3) are then carried out several times and one after the other in accordance with the following explanations and, in this variant of the method according to the invention, include a suitable joining step as a sub-step of the manufacturing step (S2). A suitable joining method is, for example, a chemical joining method, in particular an adhesive method, further in particular a bonding method, or a physical, in particular mechanical, joining method.

In the previously mentioned variant of the method according to the invention, firstly the base body (105), for example, is coated with a first layer of the protective layer (106) (S3). Then the sensor unit (104), for example, is joined to the first layer of the protective layer (106) using the suitable joining method (S2). Then the arrangement of the base body (105) and the sensor unit (104), for example, is coated with a second layer of the protective layer (106) (S3). Then the actuator system (103), for example, is joined to the second layer of the protective layer (106) using the suitable joining method (S2). Then the arrangement of the base body (105), the sensor unit (104), for example, and the actuator system (103) is coated with a third layer of the protective layer (106) (S3). Then, for example, the connecting element (102) is joined to the third layer of the protective layer (106) using the suitable joining method (S2). Then, the arrangement of the example base body (105), the example sensor unit (104), the example actuator system (103) and the example connecting element (102) is coated with a fourth layer of the protective layer (106) (S3). Then, for example, the substrate (101) is joined to the fourth layer of the protective layer (106) using the suitable joining method (S2). Then, the arrangement of the example base body (105), the example sensor unit (104), the example actuator system (103), the example connecting element (102) and the example substrate is coated with a fifth layer of the protective layer (106) (S3). In each sub-step, a new, partially coated mechatronic sub-arrangement is therefore created from one, two, three or more components, each of which has a different number of layers of the protective layer (106) on the different sub-components. In a first aspect of this method variant, the layer thicknesses of the individual layers of the protective layer (106) are equal within the scope of the layer thickness error according to the invention specified above. In a further aspect of this method variant, the layer thicknesses of the individual layers of the protective layer (106) are unequal, but each have a layer thickness error according to the invention.

In further variants of this method according to the invention, the individual sub-steps consisting of a coating step (S3) and a joining step (S2) can be carried out in a combinatorial order. In a further special variant of the method, two, three or more of the components of the mechatronic arrangement (100') are first assembled or joined to form a mechatronic sub-arrangement (S2) and then coated with a common protective layer (106) (S3).

In a variant of the method according to the invention, the coating step (S3) of the mechatronic arrangement (100`) or the components of the mechatronic arrangement (100`) is carried out by means of a highly conformal coating method. A highly conformal coating method is characterized according to the invention in that a layer thickness error of less than 1 nm as a deviation from a given target layer thickness. A highly conformal coating process is, for example, an atomic layer deposition process, a chemical vapor deposition process, a sputter deposition process, or a pulsed laser deposition process.

In a further variant of the method according to the invention, each of the individual coating steps (S3) as described above involves coating with a layer of electrically conductive material (124) or coating with a layer of electrically insulating material (125). In a first variant of the invention, the methods for coating with a layer of electrically conductive material (124) and for coating with a layer of electrically insulating material (125) are of the same nature. In a further variant of the invention, the coating method for coating with a layer of electrically conductive material (124) and for coating with a layer of electrically insulating material (125) are coating methods of different natures.

In a further variant of the method according to the invention, the coating process during the coating step (S3) consists of a sequence of a plurality of coating steps using layers of electrically conductive material (124) and/or layers of electrically insulating material (125).

In a further variant of the method according to the invention, after carrying out the coating step (S3) according to the invention, a protective layer (106) applied to one of the surfaces (107) - (119) is at least partially removed by a chemical and/or physical processing method on at least one surface (107) - (119). In one aspect of the invention, the protective layer (106) applied to the surface (107) - (119) is completely removed so that the surface (107) - (119) is freely accessible. In one aspect of the invention, the method for removing the protective layer (106) applied to a surface (107) - (119) is a chemical etching method and/or a polishing method.

In a further variant of the method according to the invention, in a fourth step (S4), the protective layer (106) is processed by a chemical and/or physical processing method. In one aspect of the invention, a method step (S4) according to the invention is a shaping processing method, for example a machining method, or a polishing method. In a further aspect of the invention, a method step (S4) according to the invention is a shaping chemical etching method. In a further aspect of the invention, a method step (S4) according to the invention is a cleaning method, for example a wet-chemical cleaning method, or a physical cleaning method. In a further aspect of the invention, a corresponding chemical and/or physical processing method (S4) is also carried out after each of the previously described sequential (partial) coatings of individual components of the mechatronic arrangement and/or individual mechatronic sub-arrangements.

In a further variant of the method according to the invention, during or after carrying out the method step (S2) and/or (S3) and/or (S4), a grounding (S5) of at least one layer of electrically conductive material (124) of the protective layer (106) is produced by means of a grounding element (129). In one aspect of the invention, the grounding element (129) is an electrical conductor, for example a cable, which is connected to an electrical ground. In one variant of the invention, all electrically conductive regions of a layer of the protective layer (106) of electrically conductive material (127) are designed in such a way that the electrical grounding is carried out by means of a common grounding element (129) for the corresponding layer of the protective layer (106) of electrically conductive material (127). A further aspect of the invention relates to a special embodiment of the protective layer (106), in which partially interrupted layers of electrically conductive material (124) of the protective layer (106) are created from geometric aspects of the components of the mechatronic arrangement (100') and/or the mechatronic sub-arrangements during the manufacturing process and/or the components of the mechatronic arrangement (100'), as well as from aspects of the chemical and/or physical processing of a layer of a protective layer (106) during the manufacturing process. In this aspect of the invention, each partial area of the layer of electrically conductive material (124) is electrically conductively connected to the grounding element (129) in such a way that an electrical grounding (129) of the corresponding partial area of the layer of electrically conductive material (124) is present. In a further aspect of the invention, one, two, three or more such partial areas of the layer of electrically conductive material (124) are connected to the same grounding element (129). In a further aspect of the invention, one, two, three or more such partial regions of the layer of electrically conductive material (124) are each connected to a separate grounding element (129).

10 shows a diagram of a method according to the invention for producing an individual mirror (127, 128). In a first step (S6) of the method, the mechatronic element (100), produced according to the method defined above, is provided. In a further method step (S7), at least one surface (107) - (108) of the mechatronic element (100) is coated with a reflective coating (126), in particular one that reflects DUV and/or VUV and/or EUV radiation (123). A coating method for coating according to the invention according to step (S7) is, for example, a highly conformal coating method as defined above. In a further aspect of the invention, a coating method of method step (S7) consists of a plurality of individual steps, during each of which a layer with defined physical, in particular optical, properties is applied.

List of reference symbols

100

Mechatronic element

100'

Mechatronic arrangement

101

Substrat

102

Connecting element

103

Actuator system

104

Sensor unit

105

Base body

106

Protective layer

107.1/2/3/4

surface

108.1/2/3/4

surface

109.1/2

surface

110.1/2

surface

111.1/2

surface

112.1/2

surface

113.1/2

surface

114.1/2

surface

115.1/2

surface

116.1/2

surface

117.1/2

surface

118.1/2

surface

119.1/2

surface

120

Component of a hydrogen plasma

121

Component of a hydrogen plasma

123

DUV and/or VUV and/or EUV radiation

124

Layer of electrically conductive material

125

Layer of electrically insulating material

126

Reflective coating

127

Single mirror

128

Single mirror

129

Earthing element

130

Line unit

131

Joint structure

132

Cavity

133

Joint base

134

surface

200

Micromirror array

201

Micromirror array

300

Faceted mirror

301

Base body

400

Semiconductor technology facility

401

Lighting system

402

Radiation source

403

Lighting optics

404

Object field

405

Object level

406

Reticle

407

Reticle holder

408

Reticle displacement drive

409

Projection optics

410

Image field

411

Image plane

412

Wafers

413

Wafer holder

414

Wafer relocation drive

415

EUV radiation

416

collector

417

Intermediate focal plane

418

Deflecting mirror

419

Faceted mirror

420

Facets

421

Faceted mirror

422

Facets

M1-M11

Mirror of a projection exposure system

QUOTES INCLUDED IN THE DESCRIPTION

This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions.

Cited patent literature

• EN 102020208665 [0002]
• DE 102008009600 A1 [0002, 0141, 0146]
• DE 102008009600 [0007]
• DE 102015225535 A1 [0008]
• EN 102017213176 [0009]
• DE 102014213181 A1 [0010]
• DE 10218204364 A1 [0010]
• US 20060132747 A1 [0144]
• EP 1614008 B1 [0144]
• US6573978 [0144]
• DE 102017220586 A1 [0149]
• US 20180074303 A1 [0163]

Claims (23)

Mechatronic element (100), comprising: - a mechatronic arrangement (100') comprising a substrate (101) and/or a connecting element (102) and/or an actuator system (103) and/or a base body (105), and - a protective layer (106), characterized in that the protective layer (106) is at least partially applied - on at least one surface (107) - (119) and/or - at least partially within at least one cavity (132). Mechatronic Element (100) according to Claim 1 , characterized in that the protective layer (106) is stable against - chemical reactions with a hydrogen plasma and its components (120, 121) and/or - permeation of components (120, 121) of a hydrogen plasma and/or - DUV, VUV and/or EUV radiation (123) and/or - temperatures > 473 K. Mechatronic element (100) according to one of the preceding claims, characterized in that - the position of the substrate (101) in space, and/or - the orientation of the substrate (101) relative to a surface (114) of the base body (105) is adjusted by means of the actuator system (103) in at least one degree of freedom. Mechatronic element (100) according to one of the preceding claims, characterized in that at least one surface (107) of the substrate (101) is designed as - planar surface, - convex-curved surface, - concave-curved surface, - a free-form surface. Mechatronic element (100) according to one of the preceding claims, characterized in that the protective layer (106) has an average layer thickness of 10-1000 nm, preferably 30-300 nm, particularly preferably 50-150 nm with a layer thickness error of at most 1 nm. Mechatronic element (100) according to one of the preceding claims, characterized in that - a surface (107.3) of the protective layer (106) and/or - a surface (107.1) of the substrate (101) has a surface roughness in the range 80 - 500 pm with a standard deviation of at most 20 pm. Mechatronic element (100) according to one of the preceding claims, characterized in that the protective layer (106) is amorphous, crystalline, or partially crystalline. Mechatronic element (100) according to one of the preceding claims, characterized in that the electrical conductivity in at least a partial region of the protective layer (106) is set in the range of 10 ^-2 - 10 ^-4 S by doping. Mechatronic element (100) according to one of the preceding claims, characterized in that at least a partial region of the protective layer (106) is grounded by means of a grounding element (129). Mechatronic element (100) according to one of the preceding claims, characterized in that the protective layer (106) consists of - at least one layer of electrically conductive material (124), and/or - at least one layer of electrically insulating material (125), - wherein the composition of the protective layer (106) on the individual surfaces (107) - (119) is homogeneous in each case. Mechatronic Element (100) according to Claim 10 , characterized in that - each layer of electrically conductive material (124), and/or - each layer of electrically insulating material (125) has an average layer thickness of 1 - 100 nm with a layer thickness error of 1 nm. Mechatronic Element (100) according to Claim 10 and 11 , characterized in that the electrically conductive material (124) comprises one of the elements of groups 3-6 and/or groups 8-11 and/or Re. Mechatronic Element (100) according to Claim 10 - 12 , characterized in that the electrically insulating material (125) comprises oxides and/or nitrides and/or consists of a ceramic material. Single mirror (127), comprising: - a mechatronic element (100) according to one of the Claims 1 - 13 , and - a reflective coating (126), in particular reflecting DUV, and/or VUV, and/or EUV radiation (123), characterized in that the reflective coating (126) is at least partially applied to at least one of the surfaces (107) - (108). Micromirror array (200), comprising: - at least one first individual mirror (127) according to Claim 14 and - at least one second individual mirror (128) according to Claim 14 , characterized in that the at least one first individual mirror (127) and the at least one second individual mirror (128), taking into account the maximum ranges of movement of all axes of movement of at least one actuator system (103), - are adjustable independently of one another in every degree of freedom adjustable by the actuator system (103), - are arranged contactlessly with one another, - are arranged to form an approximately gap-free arrangement of reflective coatings (126). Facet mirror (300), comprising: - a base plate (301), and - at least one first micromirror array (200) according to Claim 15 and - at least one second micromirror array (201) according to Claim 15 , characterized in that the at least one first micromirror array (200) and the at least one second micromirror array (201) - are fixed on the base plate (301) and - form an overall reflection surface for actuator-controlled reflection of DUV, VUV and/or EUV radiation (123). Semiconductor technology plant (400), comprising: - at least one facet mirror (300) according to Claim 16 , characterized in that the at least one facet mirror (300) as part of an illumination system (401) guides DUV and/or VUV and/or EUV radiation (123) from a radiation source (402) to a reticle (406). Method for producing a mechatronic element (100) according to one of the Claims 1 - 13 , comprising: - providing (S1) at least one component of the mechatronic arrangement (100'), in particular the base body (105) and/or the actuator system (103) and/or the connection unit (102) and/or the substrate (101), - producing (S2) a mechatronic arrangement (100'), - coating (S3) the mechatronic arrangement (100') with a protective layer (106) on at least one of the surfaces (107) - (119) and/or within at least one cavity (132). Procedure according to Claim 18 , characterized in that the coating (S3) of the mechatronic arrangement (100') or at least one of the components of the mechatronic arrangement (100') with the protective layer (106) is carried out by means of a highly conformal coating process. Procedure according to Claim 18 or 19 , characterized in that the coating method during the coating step (S3) of the mechatronic arrangement (100') with a protective layer (106) consists of a sequence of individual coating steps. Procedure according to Claim 18 - 20 , further comprising: chemical and/or physical processing (S4) of the protective layer (106). Method according to one of the claims Claim 18 - 21 , further comprising: establishing a grounding (S5) of at least one layer of electrically conductive material (124) of the protective layer (106) by means of a grounding element (129). Method for producing a single mirror (127, 128), comprising: - providing (S6) a mechatronic element (100) according to one of the Claims 18 - 22 , - coating (S7) at least one surface (107) - (108) with a reflective coating (126), in particular one which reflects DUV and/or VUV and/or EUV radiation (123).

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