DE102022130568A1 - LASER DEVICE AND ELECTRONIC DEVICE - Google Patents

Abstract

A laser device (10) comprises a whispering gallery mode resonator (120) which is ring-shaped or disk-shaped, wherein a ring or disk plane defines a first horizontal plane, and has a laser-active material (124), wherein at least one optical mode (122) can be formed in the whispering gallery mode resonator (120). The laser device (10) further comprises an optoelectronic semiconductor component (130), wherein the optoelectronic semiconductor component (130) is arranged in the vertical direction below or above the first plane and is suitable for emitting electromagnetic radiation (15) in a direction having a vertical component, wherein the electromagnetic radiation (15) is suitable for pumping the laser-active material (124).

Description

Whispering gallery mode resonators (WGM) made of a laser-active material can serve as efficient microphotonic coherent light sources. In general, concepts are sought that allow a laser device with a whispering gallery mode resonator to be constructed in a practically manageable manner.

The present invention has for its object to provide an improved laser device.

According to embodiments, the object is achieved by the subject matter of the independent patent claims. Advantageous further developments are defined in the dependent claims. A laser device comprises a whispering gallery mode resonator which is ring-shaped or disk-shaped, wherein a ring or disk plane defines a first horizontal plane, and has a laser-active material, wherein at least one optical mode can be formed in the whispering gallery mode resonator. The laser device further comprises an optoelectronic semiconductor component, wherein the optoelectronic semiconductor component is arranged in the vertical direction below or above the first plane and is suitable for emitting electromagnetic radiation in a direction having a vertical component, wherein the electromagnetic radiation is suitable for pumping the laser-active material.

According to further embodiments, the whispering gallery mode resonator can also be spherical or ellipsoidal. An equatorial plane defines a first horizontal plane. For example, in the case of a spherical resonator, an equatorial plane can be any plane that intersects the center of the sphere. In the case of an ellipsoidal resonator, an equatorial plane can be a plane with the largest possible circumference or the largest possible area, each of which intersects the center of the ellipsoid.

For example, the optoelectronic semiconductor component may be suitable for emitting the electromagnetic radiation in a direction such that the electromagnetic radiation overlaps with the optical mode, for example a vertical cross-section of the optical mode.

According to embodiments, the laser device comprises an arrangement of optoelectronic semiconductor components arranged in a second horizontal plane.

The optoelectronic semiconductor components can be arranged in a ring shape.

According to embodiments, the laser device further comprises a control device which is suitable for operating the individual optoelectronic semiconductor components with identical phase.

According to further embodiments, the control device may be suitable for selectively operating individual ones of the optoelectronic semiconductor components.

For example, the optoelectronic semiconductor device may comprise a vertical cavity surface emitting semiconductor laser, VCSEL.

The aperture of the VCSEL can be dimensioned such that the horizontal extension of the emitted electromagnetic radiation in the whispering gallery mode resonator is smaller than the vertical cross section of the optical mode.

According to further embodiments, the optoelectronic semiconductor component comprises a light-emitting diode.

The laser device may further comprise a blocking layer on a side of the whispering gallery mode resonator facing the optoelectronic semiconductor component.

In addition, the laser device can contain a prism for coupling out generated laser radiation.

For example, the prism can be formed integrally with the whispering gallery mode resonator.

According to embodiments, the laser device may further comprise a heating device which is attached to the whispering gallery mode resonator and is suitable for changing a wavelength of the generated laser radiation.

According to embodiments, an electronic device comprises the laser device described above. The electronic device may be, for example, a spectroscopy device or a LIDAR device.

• 1A zeigt eine schematische Darstellung einer Laservorrichtung gemäß Ausführungsformen.
• 1B zeigt eine schematische Darstellung eines VCSEL („vertical cavity surface emitting laser“) als Komponente der Laservorrichtung.
• 1C zeigt eine schematische Darstellung einer LED („lichtemittierende Diode“) als Komponente der Laservorrichtung.
• 1D zeigt eine schematische Darstellung einer Laservorrichtung gemäß weiteren Ausführungsformen.
• Die 2A und 2B veranschaulichen Beispiele von Whispering-Gallery-Mode Resonatoren.
• 3 zeigt eine perspektivische Ansicht einer Laservorrichtung gemäß Ausführungsformen.
• Die 4A und 4B zeigen Komponenten einer Laservorrichtung.
• 4C zeigt ein Beispiel einer zusammengefügten Laservorrichtung gemäß Ausführungsformen.
• 5 zeigt eine weitere Ausgestaltung des Whispering-Gallery-Mode Resonators.
• Die 6A und 6B zeigen Komponenten einer Laservorrichtung gemäß weiteren Ausführungsformen.
• 6C zeigt eine perspektivische Ansicht einer Laservorrichtung gemäß weiteren Ausführungsformen.
• 7 zeigt eine elektronische Vorrichtung gemäß Ausführungsformen.

The accompanying drawings are intended to provide an understanding of embodiments of the invention. The drawings illustrate embodiments and together with the description serve to explain the same. Other embodiments and many of the intended advantages will become apparent from the detailed description below. The elements and structures shown in the drawings are not necessarily ously shown to scale. Identical reference symbols refer to identical or corresponding elements and structures.

• 1A shows a schematic representation of a laser device according to embodiments.
• 1B shows a schematic representation of a VCSEL (“vertical cavity surface emitting laser”) as a component of the laser device.
• 1C shows a schematic representation of an LED (“light emitting diode”) as a component of the laser device.
• 1D shows a schematic representation of a laser device according to further embodiments.
• The 2A and 2 B illustrate examples of whispering gallery mode resonators.
• 3 shows a perspective view of a laser device according to embodiments.
• The 4A and 4B show components of a laser device.
• 4C shows an example of an assembled laser device according to embodiments.
• 5 shows a further design of the Whispering Gallery Mode Resonator.
• The 6A and 6B show components of a laser device according to further embodiments.
• 6C shows a perspective view of a laser device according to further embodiments.
• 7 shows an electronic device according to embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure, and in which specific embodiments are shown for purposes of illustration. In this context, directional terminology such as "top", "bottom", "front", "back", "over", "on", "in front of", "behind", "fore", "backward", etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology is for purposes of explanation only and is not in any way limiting.

The description of the embodiments is not limiting, since other embodiments exist and structural or logical changes may be made without departing from the scope defined by the patent claims. In particular, elements of embodiments described below may be combined with elements of other embodiments described, unless the context indicates otherwise.

The terms “lateral” and “horizontal” as used in this specification are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body.

This can be, for example, the surface of a wafer or a chip (die).

The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when growing layers.

The term "vertical" as used in this description is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can, for example, correspond to a growth direction when growing layers.

The terms "wafer" or "semiconductor substrate" used in the following description may encompass any semiconductor-based structure having a semiconductor surface. Wafer and structure are to be understood as including doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base support, and other semiconductor structures. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, for example a GaAs substrate, a GaN substrate or a Si substrate, or of an insulating material, for example on a sapphire substrate.

Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include in particular nitride semiconductor compounds, through which, for example, ultraviolet, blue or longer-wave light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, Al-GaInBN, phosphide semiconductor compounds, through which, for example, green or longer-wave light can be generated, such as GaAsP, AlGaInP, GaP, AlGaP, as well as other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga ₂ O ₃ , Dia mant, hexagonal BN and combinations of the above materials. The stoichiometric ratio of the compound semiconductor materials may vary. Other examples of semiconductor materials may include silicon, silicon-germanium and germanium. In the context of the present description, the term "semiconductor" also includes organic semiconductor materials.

The term “substrate” generally includes insulating, conductive or semiconductor substrates.

1A shows a laser device 10 according to embodiments. The laser device 10 comprises a whispering gallery mode resonator 120, which is ring-shaped or disk-shaped. A ring or disk plane defines a first horizontal plane 126, for example the xy plane. The whispering gallery mode resonator 120 has a laser-active material, wherein at least one optical mode with a laser frequency can be formed in the whispering gallery mode resonator. The laser device 10 further has an optoelectronic semiconductor component 130, which is arranged in the vertical direction below or above the first plane. The optoelectronic semiconductor component 130 is suitable for emitting electromagnetic radiation 15 in a direction having a vertical component, wherein the electromagnetic radiation 15 is suitable for pumping the laser-active material 124.

A whispering gallery mode resonator, WGM, 120, for example, is made of a laser-active material. Examples of laser-active materials generally include any materials that can act as laser-active amplifier materials. Examples of laser-active materials include rare earth-doped oxides, for example Nd:YVO ₄ . Other doping materials can be other rare earths. For example, Pr ³⁺ , Tb ³⁺ , Dy ³⁺ , Tm ³⁺ or Ho ³⁺ ions can be used as doping materials. In general, any host materials can be used, for example oxides or fluorides. Oxides include, for example, YAG (yttrium aluminum garnet), YAP (yttrium aluminum perovskite), SRA (SrAl ₁₂ O ₁₉ ), SLMA (Sr _0.8 La _0.2 MnAl ₁₁ O ₁₉ ), LuAP (lutetium aluminum perovskite), LMA (lanthanum magnesium hexaaluminate), CAO (calcium oxide). Fluorides include, for example, YGF (Y _0.5 Gd _0.5 F ₃ ), YLF (yttrium lithium fluoride) (LiYF ₄ ), SrF (strontium fluoride), NGF (NaGdF ₄ ), LLF (LiLuF ₄ ), GLF (GdLiF ₄ ), LaF (LaF ₃ ), KYF (KY ₃ F ₁₀ ), CaF (CaF ₂ ), BYLF (B (Y _0.8 Lu _0.2 )F ₈ ), BYF (BaY ₂ F ₈ ) and others.

For example, the whispering gallery mode resonator can have a geometric dimension such that the resonance condition is met for certain wavelengths emitted by the laser-active material. For example, the radius R can be adjusted accordingly to provide a corresponding resonator length. Furthermore, the radius r can be adjusted so that the desired laser modes are formed. The radius R can be larger than the radius r. For example, the radius R and the radius r can be smaller than 1 mm. For example, the radius R and the radius r can be larger than 10 µm.

1A further shows an optical mode 122 that can be formed in the whispering gallery mode resonator 120. The optical mode 122 can, for example, as illustrated in the lower left part, have a dimension w _m in the horizontal direction that corresponds to a radial dimension. Furthermore, the optical mode 122 can have a dimension h _m in the vertical direction that corresponds to a polar dimension. For example, the dimension h _m can be larger than the dimension w _m . The dimension h _m can, for example, be smaller than 100 µm. The dimension w _m can, for example, be smaller than 100 µm.

For example, the optoelectronic semiconductor component 130 is suitable for emitting light with a relatively short wavelength, for example blue light. In this case, any wavelength of laser radiation can be generated using the whispering gallery mode resonator 120 with a suitable laser-active material and suitable dimensions of the resonator.

1B shows a surface-emitting semiconductor laser, for example a vertical cavity surface-emitting semiconductor laser, VCSEL, 132. The VCSEL 132 comprises a first semiconductor layer 101 of a first conductivity type, for example p-conductive, and a second semiconductor layer 102 of a second conductivity type, for example n-conductive. An active zone 103 for generating radiation is arranged between the first and second semiconductor layers 101, 102. The active zone 103 can, for example, have a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multiple quantum well structure (MQW) for generating radiation. The term "quantum well structure" has no meaning with regard to the dimensionality of the quantization. It therefore includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers.

A first resonator mirror 104 is arranged, for example, above the first semiconductor layer 101. A second resonator mirror 105 is arranged, for example, below the second semiconductor layer 102 arranged. An optical resonator is formed between the first and second resonator mirrors 104, 105. A voltage source 108 is connected to a first contact element 111. The first contact element 111 is electrically connected to the first semiconductor layer 101. A second contact element 112 is connected to the voltage source 108. The second contact element 112 is electrically connected to the second semiconductor layer 102. The VCSEL 132 further comprises a blocking layer 109. An opening in the blocking layer 109 defines an aperture 106 of the VCSEL 132.

If a suitable electrical voltage is applied between the first and second semiconductor layers 101, 102 via the voltage source 108, electrons and holes recombine in the region of the active zone 103 and emit electromagnetic radiation 15 in a direction that has a vertical component. For example, the electromagnetic radiation 15 can be emitted in a vertical direction, for example the z direction.

The optoelectronic semiconductor component 130 is positioned, for example, such that the electromagnetic radiation 15 is emitted into an edge region of the WGM 120. More precisely, the electromagnetic radiation 15 is emitted, for example, such that the electromagnetic radiation 15 overlaps with a cross-section, for example a vertical cross-section, of the optical mode 122. In this way, the electromagnetic radiation 15 is radiated onto the region of the WGM 120, so that a coupling of the electromagnetic radiation 15 with the optical mode 122 takes place. For example, a horizontal extent of the emitted electromagnetic radiation can be smaller than the cross-section of the optical mode 122, for example smaller than the radial component w _m . If the optoelectronic semiconductor component 130 is realized by a VCSEL 132, this can be done by adjusting the aperture 106.

According to embodiments, the emitted electromagnetic radiation can also be shaped by lenses or other optical elements so that the horizontal extent is smaller than the cross section of the optical mode 122. For example, the optoelectronic semiconductor component 130 can be arranged at a small distance, for example less than 5 mm, from the whispering gallery mode resonator 120. The distance can also be smaller, for example less than 2 mm or less than 1 mm or less than 0.5 mm. In particular, if the electromagnetic radiation emitted by the optoelectronic semiconductor component 130 is not collimated, the distance is less than 1 mm. Accordingly, according to embodiments, a lens or an optical element can be dispensed with.

1C shows a light emitting diode 134, which according to further embodiments can represent the optoelectronic semiconductor device 130. Similar to the 1B In the VCSEL 132 shown, the light-emitting diode 134 has a first semiconductor layer 101, a second semiconductor layer 102 and an active zone 103. The voltage source 108 is connected to the first semiconductor layer 101 via a first contact element 111. The second semiconductor layer 102 is connected to the voltage source 108 via the second contact element 112.

A lens 114 may be arranged to direct the pump radiation emitted by the LED onto the WGM 120, for example the region in which the optical mode 122 is formed. The lens 114 may, for example, be suitable for reducing the diameter of the emitted pump radiation 15 so that the diameter of the emitted pump radiation 15 on the WGM 120 is approximately as large as or smaller than a cross section of the optical mode 122.

1D shows a laser device 10 according to further embodiments. The laser device 10 comprises a whispering gallery mode resonator 120, which is spherical in shape. An equatorial plane defines a first horizontal plane 126, for example the xy plane. The other components of the laser device are similar or identical to those described with reference to 1A have been described. For example, the laser device 10 has a lens 114 which is suitable for collimating electromagnetic radiation 15 emitted by the optoelectronic semiconductor device 130.

2A shows in the left part a perspective view of a ring-shaped whispering gallery mode resonator 120b. In the right part shows 2A a cross-sectional view of the ring-shaped whispering gallery mode resonator 120b. 2A also shows the position of an optical mode 122. Furthermore, 2A the emitted laser radiation 20.

2 B shows in the left part an example of a disk-shaped whispering gallery mode resonator 120a. The disk-shaped whispering gallery mode resonator 120a can, for example, be made entirely of laser-active material 124. The right part shows 2 B a cross-sectional view of the disc-shaped Whispering Gallery Mode Resonator 120a. 2 B still shows generated laser radiation 20.

3 shows a perspective view of a laser device 10 according to embodiments. A semiconductor chip, for example a VCSEL chip 131, contains a plurality of optoelectronic semiconductor components 130. For example, the optoelectronic semiconductor components 130 can each be designed as VCSELs 132. The optoelectronic semiconductor components 130 are arranged in a second horizontal plane that is spaced apart in the vertical direction from the first horizontal plane in which the whispering gallery mode resonator 120 is located. For example, the individual optoelectronic semiconductor components 130 can be arranged in a ring shape, wherein a radius of the ring in which they are arranged can correspond to the radius of the optical mode 122. In this way, it can be caused that the electromagnetic radiation emitted by the optoelectronic semiconductor components 130 each overlaps with the optical mode 122. If a voltage is applied to the individual optoelectronic semiconductor components 130, pump radiation is emitted in the direction of the whispering gallery mode resonator 120. An optical mode 122 is formed, which can propagate, for example, clockwise in the whispering gallery mode resonator 120. Another optical mode 122 can propagate counterclockwise.

Laser radiation 20 can be coupled out via a prism 138, which is arranged adjacent to the optical mode 122 that is being formed. For example, the laser radiation 20 can be coupled out in two opposite directions. A control device 133 can be connected to each of the optoelectronic semiconductor components 130, for example VCSELs 132.

For example, the optoelectronic semiconductor components can be implemented as VCSELs 132. The control device 133 can cause all VCSELs 132 to emit in phase.

According to further embodiments, the optoelectronic semiconductor components can be implemented as VCSELs 132 or as LEDs 134. The control device 133 can selectively switch individual optoelectronic semiconductor components 130 on or off. In this way, the output power of the laser device 10 can be adjusted.

The 4A to 4C illustrate components and the structure of a laser device according to further embodiments in which the whispering gallery mode resonator 120 is applied directly to the VCSEL chip 131. In this way, the resonator and prism can be realized as a one-piece module, which can greatly simplify integration and alignment steps.

4A shows the whispering gallery mode resonator 120, which is applied to a transparent substrate 100. The transparent substrate 100 is structured such that a prism 138 for coupling out the laser radiation is arranged adjacent to the whispering gallery mode resonator 120. Furthermore, recesses can be provided for forming contact regions. The VCSEL chip 131 contains a plurality of VCSEL or optoelectronic semiconductor components 130, which can be arranged along a ring. The VCSEL chip 131 can have a recess for providing the first contact region 116. Furthermore, a conductive coating for forming the second contact region 117 can be formed over the VCSEL chip 131.

4C now shows a perspective view of a laser device 10, which is made by assembling the 4A and 4B shown components. For example, the control device 133 can be connected to the first and second contact areas 116, 117 in order to achieve phase-accurate control of the individual optoelectronic semiconductor components 130, for example VCSELs 132. The whispering gallery mode resonator 120 is applied directly above the VCSELs 132 so that the emitted pump radiation is efficiently coupled into the resonator 120. Generated laser radiation 20 is coupled out via the prism 138.

5 shows an example of a whispering gallery mode resonator 120, which for example has a blocking layer 136 on the side facing the optoelectronic semiconductor components 130. For example, the blocking layer 136 can be a dichroic layer. For example, the blocking layer 136 can be suitable for letting through electromagnetic radiation of a first wavelength (eg pump light 15) and reflecting electromagnetic radiation of a second wavelength (eg laser radiation 20). In this way, the proportion of light that is reflected back into the optoelectronic semiconductor components 130 can be avoided. The whispering gallery mode resonator 120 with the blocking layer 136 can be used in all embodiments shown.

The 6A and 6B show components of a laser device according to further embodiments. The 6A The Whispering Gallery Mode Resonator 120 shown is similar to the one in 4A Deviating from this, a Heating device 140 is attached to the surface. By heating the WGM resonator 120, the refractive index of the material and thus an emission wavelength of the generated laser radiation 20 can be adjusted. The 6B The VCSEL chip 131 shown may, for example, be identical to the one shown in 4B shown.

6C shows a perspective view of the laser device after assembly of the components. The 6C shown laser device 10 can be identical to the one in 4C shown with the modification that a heater 140 is arranged on the surface of the whispering gallery mode resonator 120.

As has been described, with the laser device shown it is possible to provide a compact and practically handleable laser device 10 in which a wavelength of the laser radiation 20 can be precisely set to any value.

The laser device is also less complicated, lightweight and cost effective. In this way, a very narrow band laser source can be provided. By adding the heater 140, an emission wavelength can be tuned.

The described laser device can be used, for example, in spectroscopic applications, since it provides a precisely adjustable narrow-band wavelength. By irradiating the region of the whispering gallery mode resonator 120 in which the optical mode is formed with the pump radiation, undesirable heating of the whispering gallery mode resonator 120 is avoided and the emission wavelength is thereby stabilized. As has been described, a conventional light-emitting diode 134 can also be used as a pump light source in the laser device.

In embodiments having an arrangement of optoelectronic semiconductor components 130, it is possible to selectively operate only individual ones of the semiconductor components 130. This allows the output power to be adjusted.

7 shows an electronic device 30 according to embodiments. The electronic device 30 comprises the described laser device 10. The electronic device 30 can be, for example, a spectroscopy device. Since the laser device 10 emits laser radiation 20 with a precisely adjustable wavelength, it can advantageously be used in the spectroscopy device. According to further embodiments, the electronic device 30 can be a LIDAR device, for example for use at smaller distances, for example less than 100 m. According to further embodiments, the electronic device 30 can be a device in which precisely adjustable wavelengths are advantageous.

Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that a variety of alternative and/or equivalent designs may be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

LIST OF REFERENCE SYMBOLS

10

Laser device

15

electromagnetic radiation

20

Laser radiation

30

electronic device

101

first semiconductor layer

102

second semiconductor layer

103

active zone

104

first resonator mirror

105

second resonator mirror

106

Aperture

108

Voltage source

109

blocking layer

111

first contact element

112

second contact element

114

lens

116

first contact area

117

second contact area

120

Whispering Gallery Mode Resonator

120a

disc-shaped resonator

120b

ring-shaped resonator

122

optical fashion

124

laser-active material

126

first horizontal level

130

Optoelectronic semiconductor device

131

VCSEL chip

132

VCSEL

133

Control device

134

Light emitting diode

136

Blocking layer

138

prism

140

Heating device

Claims (16)

Laser device (10), comprising: a whispering gallery mode resonator (120) which is ring-shaped or disk-shaped, wherein a ring or disk plane defines a first horizontal plane, and has a laser-active material (124), wherein at least one optical mode (122) can be formed in the whispering gallery mode resonator (120), and an optoelectronic semiconductor component (130), wherein the optoelectronic semiconductor component (130) is arranged in the vertical direction below or above the first horizontal plane and is suitable for emitting electromagnetic radiation (15) in a direction having a vertical component, wherein the electromagnetic radiation (15) is suitable for pumping the laser-active material (124). Laser device (10), comprising: a whispering gallery mode resonator (120) which is spherical or ellipsoidal, wherein an equatorial plane defines a first horizontal plane, and has a laser-active material (124), wherein at least one optical mode (122) can be formed in the whispering gallery mode resonator (120), and an optoelectronic semiconductor component (130), wherein the optoelectronic semiconductor component (130) is arranged in the vertical direction below or above the first horizontal plane and is suitable for emitting electromagnetic radiation (15) in a direction having a vertical component, wherein the electromagnetic radiation (15) is suitable for pumping the laser-active material (124). Laser device (10) according to Claim 1 or 2 , wherein the optoelectronic semiconductor component (130) is suitable for emitting the electromagnetic radiation (15) in a direction such that the electromagnetic radiation (15) overlaps with a cross-section of the optical mode (122). Laser device (10) according to one of the preceding claims, comprising an array of optoelectronic semiconductor components (130) arranged in a second horizontal plane. Laser device (10) according to Claim 4 , wherein the optoelectronic semiconductor components (130) are arranged in a ring shape. Laser device (10) according to Claim 4 or 5 , further comprising a control device (133) which is suitable for operating the individual optoelectronic semiconductor components (130) with an identical phase. Laser device (10) according to Claim 4 or 5 , further comprising a control device (133) which is suitable for selectively operating individual ones of the optoelectronic semiconductor components (130). Laser device (10) according to one of the preceding claims, wherein the optoelectronic semiconductor component (130) comprises a vertical cavity surface emitting semiconductor laser (132), VCSEL. Laser device (10) according to Claim 8 , wherein an aperture (106) of the VCSEL (132) is dimensioned such that a horizontal extent of the emitted electromagnetic radiation in the whispering gallery mode resonator (120) is smaller than the cross section of the optical mode (122). Laser device (10) according to one of the Claims 1 until 7 , wherein the optoelectronic semiconductor component (130) comprises a light emitting diode (134). Laser device (10) according to one of the preceding claims, further comprising a blocking layer (136) on a side of the whispering gallery mode resonator (120) facing the optoelectronic semiconductor component (130). Laser device (10) according to one of the preceding claims, further comprising a prism (138) for coupling out generated laser radiation (20). Laser device (10) according to Claim 11 , wherein the prism (138) is formed integrally with the whispering gallery mode resonator (120). Laser device (10) according to one of the preceding claims, further comprising a heating device (140) which is attached to the whispering gallery mode resonator (120) and is suitable for changing a wavelength of the generated laser radiation (20). Electronic device (30) comprising the laser device (10) according to any one of the preceding claims. Electronic device (30) according to Claim 15 which is a spectroscopy device or a LIDAR device.

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