DE102022127126A1 - Vertically emitting semiconductor laser component, array and chip with preferred direction - Google Patents

Abstract

What is proposed is a vertically emitting semiconductor laser component (1) with a semiconductor material with an optical axis; a mesa (2) for emitting light in a light emission direction (7); a contact (3) for electrically contacting the mesa (2), which has a contact opening (4); wherein the contact opening (4) is arranged along a preferred direction (5); which is characterized in that the optical axis is arranged along the preferred direction (5).

Description

The invention relates to a vertical emitting semiconductor laser component according to claims 1, 2 and 3. The invention further relates to an array according to claim 9 and a chip according to claim 15.

Polarized laser radiation is used, for example, in the areas of sensors and lighting. The laser power required for this usually requires an array with a large number of vertically emitting semiconductor laser components and/or numerous meses. For applications of polarized laser radiation from a vertical-emitting semiconductor laser component, in particular a “vertical-cavity surface-emitting laser,” VCSEL for short, and/or a VCSEL array, it is advantageous if the polarization orientations of the emitted laser beams of all meses are the same. To date, a surface grid has only been used to stabilize the desired polarization of a single mesa, with the polarization of multiple mesa being ignored.

Even if several meses have the same surface grid, experiments have shown that some meses of the array emit light with a polarization that is twisted compared to the surface grid. Furthermore, it was found that the polarization orientation of the emitted laser radiation of the array and/or the individual meses is rotated by a few degrees compared to an average or a target position of the polarization orientation. As a result, the degree of polarization and the contrast decrease disadvantageously in different applications.

Proceeding from this, the present invention is based on the object of specifying an improved vertically emitting semiconductor laser component. A further object of the invention is to provide an improved array with such a semiconductor laser component. Furthermore, the invention is based on the object of providing an improved chip with such a vertically emitting semiconductor laser component.

This object is achieved according to the invention by a vertically emitting semiconductor laser component, by an array, and by a chip, with the features of the independent claims directed thereto. Advantageous further training is the subject of subclaims.

The vertically emitting semiconductor laser component and preferred developments thereof are preferably designed and provided for use in the array according to the invention and the chip according to the invention, as well as in preferred developments thereof. The array according to the invention is preferably designed and intended for use in the chip according to the invention, as well as in preferred developments thereof.

All features of the objects described here and also of the claimed objects can be used both in isolation and in combination with one another, are compatible with one another and are intended and usable for further development, provided there is no logical contradiction, and are hereby disclosed to that effect. Hereinafter, any reference to one item or feature (including the indefinite articles "a" and "an" and the definite articles "the", "the", "that"), two items or two features, or any other number of objects or features, unless expressly stated otherwise or a logical contradiction arises, is to be understood as meaning that the presence of other such objects and features is not excluded from the invention, but is also included in the invention. The reference symbols in the claims are not to be understood as limiting, but merely serve to make the claims easier to read.

According to a first aspect of the invention, the vertically emitting semiconductor laser component has a semiconductor material with an optical axis, as well as a mesa for emitting light and a contact for electrically contacting the mesa. The contact has a contact opening, wherein the contact opening is arranged along a preferred direction. According to the first aspect of the invention, the optical axis is arranged along the preferred direction.

According to a second aspect of the invention, the vertical emitting semiconductor laser device has a mesa for emitting light in a light emission direction and a contact for electrically contacting the mesa. The contact has a contact opening. In addition, the vertical emitting semiconductor laser device according to the second aspect of the invention includes a surface grating for polarizing the light. The surface grid is preferably arranged above the mesa in the light emission direction. The contact opening is arranged along a preferred direction. According to the second aspect of the invention, the surface grid is arranged perpendicularly or parallel to the preferred direction.

According to a third aspect of the invention, the vertical emitting semiconductor laser device has a mesa for emitting light in a light emission direction and a contact for electrical Contact the Mesa. The contact has a contact opening; wherein the contact opening is arranged along a preferred direction. According to the third aspect of the invention, the mesa has an oval shape in plan view along the light emission direction, which tapers in at least one region perpendicularly or parallel to the preferred direction.

According to a fourth aspect of the invention, the array comprises a plurality of vertically emitting semiconductor laser components, of which at least one semiconductor laser component, preferably all vertically emitting semiconductor laser components, is/are designed according to the invention.

According to a fifth aspect of the invention, the chip comprises a vertical emitting semiconductor laser component according to the invention and/or an array according to the invention. The chip has a height along the light emission direction, as well as a width and a length perpendicular to the light emission direction, where the length is greater than the width and the length and/or the width are arranged along the preferred direction.

Preferably, the vertically emitting semiconductor laser component has a semiconductor material with an optical axis. Preferably, the optical axis is arranged along the preferred direction or perpendicular or 45 degrees to the preferred direction. The optical axis is preferably arranged at no other angle to the preferred direction than 180 degrees or 90 degrees or 45 degrees.

The vertically emitting semiconductor laser component preferably has a surface grating for polarizing the light, which is particularly preferably arranged above the mesa in the light emission direction. Preferably, the surface grid is arranged perpendicularly or parallel or 45 degrees to the preferred direction. Preferably, the surface grid is arranged at no other angle to the preferred direction than 180 degrees or 90 degrees or 45 degrees.

Preferably, in plan view along the light emission direction, the mesa has an oval shape, which particularly preferably tapers in at least one area perpendicular or parallel or 45 degrees to the preferred direction. Preferably, the oval shape does not taper at any angle to the preferred direction other than 180 degrees or 90 degrees or 45 degrees.

The “vertical emitting semiconductor laser component” is in particular a laser diode. The vertically emitting semiconductor laser component is preferably a surface emitter. Preferably, the vertical-emitting semiconductor laser component is a “vertical-cavity surface-emitting laser,” or VCSEL for short. In particular, with the VCSEL the light is emitted perpendicular to the plane of the chip. This is in contrast to edge-emitting laser diodes, in which the light is emitted on one or two edges of the chip.

The “semiconductor material” is in particular a solid whose electrical conductivity is between >10 ⁴ S/cm and <10 ^-8 S/cm. The semiconductor material comprises or consists in particular of an element and/or a species selected from the group comprising or consisting of silicon, gallium, indium, germanium and arsenic. Preferably, the semiconductor material comprises gallium arsenide or consists of gallium arsenide.

The “optical axis” is in particular a crystal axis of a crystalline material. The optical axis is preferably the direction of an optically anisotropic and preferably birefringent crystalline material along which a polarization component of the light experiences the same refractive index. The optical axis is preferably arranged in the direction of a unique main refractive index, in particular in the case of a uniaxial crystal, for example in the whorled crystal systems with the geometries trigonal or tetragonal or hexagonal. Preferably, a light beam behaves along the optical axis like an isotropic crystal. The optical axis is preferably oriented the same way along an epitaxial layer stack in each layer of the layer stack.

The “mesa” is preferably designed as an elevation with a flat surface and a steep flank.

The “light” is preferably laser light. The light preferably has a wavelength of 500 nm to 1600 nm, particularly preferably 900 nm to 1500 nm, most preferably 1300 nm to 1500 nm.

The “light emission direction” is in particular the direction in which the light emerging from the mesa is emitted. The light emission direction is preferably perpendicular to the surface of the chip and particularly preferably perpendicular to a flat surface of the mesa.

The “contact” is designed in particular to conduct current, preferably to feed electrical energy into the mesa and/or for electrical contacting between the mesa and an energy source and/or between two mesa. The contact is preferably a p-contact. Alternatively, the contact is preferably an n-contact. The contact is in particular annular. Preferably the contact has an open shape. The contact is preferably along the top view Light emission direction designed in the form of a single or multi-open ring. The contact can be formed from a large number of contact subregions. Usually the contact is a metal contact and is formed by metal layers. Due to the aforementioned developments, the contact advantageously has improved processability.

The “contact opening” is preferably a recess, in particular a taper, or an opening of the contact. In the area of the contact opening, less contact material is preferably applied or the contact opening is completely free of the contact material. Preferably, the contact opening is electrically insulating, so that no current is conducted, particularly in the area of the contact opening. The contact opening is preferably elongated, with a length of the contact opening in a longitudinal direction being greater than a width of the contact opening in a width direction.

The alignment “along” a direction, in particular the preferred direction or the light emission direction, is in particular a parallel alignment. This means, for example, that an extension direction of a material feature, such as in particular the longitudinal direction of the contact opening, is the same as, for example, the preferred direction.

The “surface grating” is preferably an optically active grating, in particular a polarization grating for polarizing the light. The surface grid preferably has two polarization orientations, and particularly preferably has a different reflectivity for the two polarization orientations. The surface grid preferably selects a desired polarization orientation, particularly preferably via reflectivity. The surface grid is designed in particular to maximize the reflection of a desired polarization and to minimize the reflection perpendicular to the desired polarization. Preferably, the surface grid is designed to maximize a reflection difference between the two polarization orientations. The surface grid is preferably arranged on an upper Bragg mirror of the VCELS. The surface grid is preferably applied to the entire wafer and has the same polarization orientation everywhere. Alternatively, the surface grid is preferably arranged in the area of the mesa, particularly preferably only in the area of the mesa. Preferably, the surface lattice is aligned along the crystal axes of the semiconductor material gallium arsenide. In particular, the surface grid is etched into the gallium arsenide material and forms structures of 50 nm to 100 nm depth along the light emission direction, preferably of 70 nm. The structures preferably have a periodic distance perpendicular to the light emission direction of 100 nm to 200 nm, particularly preferably of 140 nm.

The “oval shape” is in particular any oval shape that does not have an axis of symmetry. The oval shape is preferably symmetrical about at least one axis of symmetry. Preferably, the oval shape is a closed, twice continuously differentiable convex curve in a plane. The oval shape is in particular an elliptical shape. Preferably the oval shape is not circular. Preferably, the oval shape has two opposite areas which taper vertically or along the preferred direction. The oval shape is preferably a flat rounded convex shape that resembles the profile of an eye. The oval shape is preferably eye-shaped.

The “trench” is in particular a depression, preferably a depression in the light emission direction. Preferably, the trench is a depression in the layer stack. The trench preferably comprises a regular arrangement of depressions. The trench is preferably designed to shape the mesa, with an inner contour of the trench preferably defining the shape of the mesa.

The “hexagonal” arrangement is preferably a honeycomb-like arrangement. In the hexagonal arrangement, the vertically emitting semiconductor laser components are preferably arranged in a regular hexagonal tiling, particularly preferably without gaps. In the hexagonal tiling, adjacent vertical emitting semiconductor laser components are preferably connected via complete edges, and particularly preferably not via corners or edge parts.

The vertically emitting semiconductor laser component preferably has a further contact opening, particularly preferably a plurality of further contact openings. The contact preferably includes the further contact opening. The further contact opening is in particular arranged along the preferred direction or perpendicular to the preferred direction or 45 degrees to the preferred direction. Preferably, the further contact opening is structurally identical to the contact opening and, in particular, has the same geometric design and is preferably congruent with the contact opening due to rotation and translation. The contact preferably has a plurality of contact openings, each of which is arranged along the preferred direction and/or perpendicularly and/or 45 degrees to the preferred direction.

Preferably, the vertically emitting semiconductor laser component comprises a trench, which particularly preferably at least partially surrounds the mesa, most preferably completely surrounds it.

The contact preferably comprises a plurality of contact connections. In particular, of the large number of contact connections, at least two contact connections are dimensioned differently.

The “contact connection” is preferably a contact portion of the contact. The contact connection preferably comprises a via or is designed as a via. The via is preferably a p-via.

Preferably, one of the differently sized contact connections is arranged along the preferred direction or perpendicularly or at a 45 degree angle to the preferred direction. Two opposite contact connections are preferably dimensioned essentially the same. Preferably, two contact connections spaced apart and opposite each other perpendicular to the light emission direction are essentially of the same dimensions. “Essentially” includes in particular the usual manufacturing tolerances. The contact preferably has a plurality of contact connections, each of which is arranged along the preferred direction and/or perpendicularly and/or 45 degrees to the preferred direction.

In particular, the trench has an oval shape in plan view along the light emission direction, which preferably tapers in at least one region perpendicular to or along the preferred direction. Alternatively, the trench preferably has a circular shape in plan view along the light emission direction. The shape of an optical aperture is preferably determined by the shape of the mesa.

Preferably, a curve of the oval shape of the trench corresponds to a curve of the oval shape of the mesa. Preferably, a curve of the contact corresponds to the curve of the mesa. Particularly preferably, in plan view along the light emission direction, the contact has an oval shape, which preferably tapers in at least one region perpendicular to or along the preferred direction. The curve shape of the oval shape of the contact preferably corresponds to the curve shape of the oval shape of the mesa.

The vertically emitting semiconductor laser component preferably comprises an optical aperture which is designed to emit light. Basically and preferably, a shape of the optical aperture is essentially the same as the shape of the mesa. In particular, this is the result of an oxidation process in which the optical aperture is formed. The shape of the optical aperture preferably deviates slightly from the shape of the mesa. In particular, in the case of an oval mesa, the tapered areas of the optical aperture become smoother, with preferably tips of the tapered areas of the optical aperture being more rounded compared to tips of the tapered areas of the mesa. Preferably, the ovality of the shape of the optical aperture increases in comparison to the shape of the mesa, in particular the curvature of the curve in plan view along the light emission direction of the optical aperture is greater than the curvature of the curve in plan view along the light emission direction of the mesa, preferably in opposite directions Partial areas of the respective curves.

In a preferred array, the vertical emitting semiconductor laser components are arranged essentially in an equilateral triangle, preferably in an exact equilateral triangle, in a plan view along the light emission direction. “Essentially” includes the usual manufacturing tolerances and is particularly subject to partial deviations from the exact equilateral shape of up to 25%, especially in the case of strongly oval shapes.

Preferably, the vertically emitting semiconductor laser components are arranged hexagonally to one another in a top view along the light emission direction.

Preferably, the vertically emitting semiconductor laser components are arranged rectangularly to one another in a top view along the light emission direction.

The “rectangular” arrangement is preferably a square arrangement. In the rectangular arrangement, the vertically emitting semiconductor laser components are preferably arranged in a square tiling. In square tiling, adjacent vertically emitting semiconductor laser components are preferably connected via complete edges, and particularly preferably not via corners or edge parts.

An array preferably comprises at least four vertically emitting semiconductor laser components. The four vertically emitting semiconductor laser components, preferably all vertically emitting semiconductor laser components, preferably have two contact connections. In particular, vertically emitting semiconductor laser components can also have only one contact connection in the edge regions of the array near the edge.

Preferably, two opposite contact connections of two semiconductor laser components are connected to one another via a conductor track. The “conductor tracks” are in particular electrically conductive connections with a two-dimensional course in one plane. The conductor tracks are preferably designed to connect the vertically emitting semiconductor laser components to one another and/or from vertically emitting semiconductor laser components to a power source. The conductor tracks are preferably designed to transmit electrical current. The conductor tracks are preferably designed for temperature transfer.

Intersecting conductor tracks are preferably spaced apart from one another in the light emission direction at least within an intersection region and are particularly preferably arranged offset one above the other. The conductor tracks preferably cross each other at a 90 degree angle or at a 45 degree angle. In particular, the intersecting conductor tracks are galvanically isolated from one another.

The “intersection area” is preferably an area in which two conductor tracks are arranged one above the other, in other words they cross each other, with one conductor track being arranged in a bridge-like manner over another conductor track. Preferably, no current is transmitted between the intersecting conductor tracks within the crossing area. The crossing area is particularly preferably electrically insulating, so that most preferably no current is transmitted between the crossing conductor tracks. Preferably, there is no temperature transfer between the intersecting conductor tracks within the crossing area or at least a significantly lower temperature transfer than along the conductor tracks. The crossing area is particularly preferably thermally insulating, so that no heat is transferred between the intersecting conductor tracks or at least significantly less heat is transferred than along the conductor tracks. The conductor tracks preferably form a tissue-like structure.

The array preferably comprises a plurality of individually addressable array subregions, preferably with at least one vertically emitting semiconductor laser component. The array subregions preferably have a different polarization, in particular a polarization rotated by 90 degrees. The vertically emitting semiconductor laser components of an individual array subregion preferably have a uniform polarization.

The array preferably comprises at least two rows of vertically emitting semiconductor laser components, which rows are particularly preferably arranged parallel to one another. The rows can represent array subareas. The contact openings of all vertically emitting semiconductor laser components in a row are preferably arranged directly one above the other along the preferred direction. In the hexagonal arrangement, the rows are preferably arranged offset from one another. In the rectangular arrangement, four vertically emitting semiconductor laser components are preferably arranged at the corners of the rectangle, with particularly preferably two adjacent vertically emitting semiconductor laser components being arranged in a row.

During tests it was found that all of the above-mentioned features and combinations of features result in several advantageous effects which are conducive to improving the vertical emitting semiconductor laser component, the array and the chip.

Advantageously, the fixed orientation relative to the preferred direction bundles numerous effects that have an influence on the birefringence in the mesa and thus on the polarization orientation. These effects therefore work particularly advantageously in the same direction. In particular, the effects are bundled and directed in one direction.

It has proven to be significantly more advantageous to align all effects in parallel than to try to create a mutually canceling or opposing alignment of the effects, especially since even small deviations from a mutually canceling orientation of the effects lead to uncontrolled overall behavior.

For example, mechanical forces and/or thermally induced stress effects are bundled in one direction by the orientation in the preferred direction in their effect on the vertical emitting semiconductor laser component, the array and/or the chip, so that the polarization orientation of the mesa or meses is the same can be influenced to a very similar or even identical extent. In particular, the emitted light thereby has a more homogeneous polarization. It was observed that mechanical stress only changes the birefringence, i.e. the wavelength separation of the two polarization modes, which thereby experience a different spectral amplification. Advantageously, the polarization modes are further separated from each other, so that the non-dominant mode is minimized by making the threshold gain more difficult.

In addition, the service life is advantageously extended, since any stress-induced material damage such as microcracks form almost exclusively in a specific orientation and do not spread in a disorderly manner.

Particularly advantageously, the provision of an oval mesa and thus an oval optical aperture leads to a more uniform polarization, since modes in the desired polarization orientation are preferentially formed by an oval geometry. In addition, the oval mesa changes the environment of the laser and thus the stresses in the crystal, whereby the stress has an influence on the birefringence, so that the polarization becomes more homogeneous due to stress-induced rectification.

It was also found that the arrangement of several meses in an array has different effects on the performance, especially if the etched areas have different widths in different directions, as is the case, for example, with closely adjacent meses.

Advantageously, the parallel alignment of all effects ensures that certain effects are enhanced. For example, a threshold current minimum of the desired polarization is better defined and more pronounced, leading to further improvement through better controllability.

• 1 zeigt ein vertikalemittierendes Halbleiterlaserbauteil mit einer in Vorzugsrichtung orientierten Kontaktöffnung;
• 2 zeigt ein vertikalemittierendes Halbleiterlaserbauteil mit einem in Vorzugsrichtung orientierten Oberflächengitter;
• 3 zeigt ein vertikalemittierendes Halbleiterlaserbauteil mit senkrecht zu der Vorzugsrichtung orientierten Kontaktöffnungen;
• 4 zeigt ein vertikalemittierendes Halbleiterlaserbauteil mit unterschiedlich dimensionierten Kontaktanschlüssen;
• 5 zeigt ein vertikalemittierendes Halbleiterlaserbauteil mit unterschiedlich dimensionierten Kontaktanschlüssen;
• 6 zeigt ein vertikalemittierendes Halbleiterlaserbauteil mit einer ovalen Mesa und einem ovalen Graben;
• 7 zeigt ein Array mit zwei Reihen vertikalemittierender Halbleiterlaserbauteile;
• 8 zeigt ein Array mit mehreren einzeln adressierbaren Arrayteilbereichen;
• 9 zeigt ein Array mit sich kreuzenden Leiterbahnen;
• 10 zeigt das Array aus 9 in Draufsicht entlang der Lichtemissionsrichtung;
• 11 zeigt einen Chip mit einem vertikalemittierenden Halbleiterlaserbauteil;
• 12 zeigt den Chip der 10 in Draufsicht.

Further properties and advantages of the invention result from the following description using exemplary embodiments and the drawings. It is understood that the features mentioned above and those to be explained below can be used not only in the combination specified in each case, but also in other combinations or on their own.

• 1 shows a vertically emitting semiconductor laser component with a contact opening oriented in the preferred direction;
• 2 shows a vertically emitting semiconductor laser component with a surface grid oriented in the preferred direction;
• 3 shows a vertically emitting semiconductor laser component with contact openings oriented perpendicular to the preferred direction;
• 4 shows a vertically emitting semiconductor laser component with differently sized contact connections;
• 5 shows a vertically emitting semiconductor laser component with differently sized contact connections;
• 6 shows a vertical emitting semiconductor laser device with an oval mesa and an oval trench;
• 7 shows an array with two rows of vertically emitting semiconductor laser devices;
• 8th shows an array with several individually addressable array subareas;
• 9 shows an array with intersecting conductor tracks;
• 10 displays the array 9 in plan view along the light emission direction;
• 11 shows a chip with a vertically emitting semiconductor laser device;
• 12 shows the chip 10 in top view.

The same reference symbols used in the figures denote the same or at least the same effect elements. The terms “top”, “bottom”, “left” and “right” as well as direction-dependent information derived from them, such as “top”, refer to the writing direction/reading direction of the figure name “Fig.” associated with a drawing, which is shown below Drawing is printed on the drawing layer. The horizontal direction is parallel to the writing direction of “Fig.” and the vertical direction is perpendicular to the writing direction of “Fig.” The writing direction is based on a horizontal, clockwise script, i.e. primarily from left to right, such as in Latin, English and German.

1 shows a vertically emitting semiconductor laser component 1 with a mesa 2, a contact 3, which is designed as a p-contact 3 and has a contact opening 4. The contact opening 4 is oriented in a preferred direction 5, so that the longitudinal extension of the contact opening 4, which runs vertically from top to bottom, is parallel to the preferred direction 5. An in 1 surface grid 6, not shown (cf. 2 ) is arranged above the mesa 2 in the light emission direction 7. The preferred direction 5 is perpendicular to a light emission direction 7. The vertically emitting semiconductor laser component 1 also includes a trench 8 which surrounds the mesa 2 and the contact 3. The preferred direction 5 is parallel to an optical axis of a semiconductor material of the vertically emitting semiconductor laser component 1.

2 shows a vertically emitting semiconductor laser component 1 with a surface grid 6 oriented in the preferred direction 5, which is arranged in the area of the mesa 2 and which comes from the mesa 2 emitted light polarized. The vertically emitting semiconductor laser component 1 also includes a further contact opening 4', which is arranged in the preferred direction 5 below the contact opening 4, the longitudinal extension of the further contact opening 4' running vertically from top to bottom being parallel to the preferred direction 5. The contact openings 4, 4' are constructed identically and can be brought into geometric alignment by rotation and translation.

3 shows a vertically emitting semiconductor laser component 1 in which the contact 3 is segmented into two contact connections 9, 9' by the contact openings 4, 4 '. The contact openings 4, 4' are oriented perpendicular to the preferred direction 5. The contact connections 9, 9' are oriented along the preferred direction 5 with their longitudinal extent running from the bottom left to the top right. The trench 8 is not circular in plan view, but is adapted to the geometric shape of the contact connections 9, 9 '.

4 shows a vertically emitting semiconductor laser component 1 with four contact openings 4, which are not individually labeled for reasons of clarity. The two contact openings 4 arranged opposite each other on the left and right are oriented perpendicular to the preferred direction 5, whereas the contact connections 9, 9 ', 9'', 9''' are oriented 45 degrees to the preferred direction 5, the angle being less than 180 degrees is used as a reference. The opposite contact connections 9 and 9 '' are of the same dimensions. The opposite contact connections 9' and 9''' are dimensioned the same. The contact connections 9 and 9' or 9 and 9''' arranged next to each other are dimensioned differently.

5 shows a vertically emitting semiconductor laser component 1 with four contact openings 4, 4 ', which are not individually labeled for reasons of clarity. The top and bottom in the vertical direction of the example 5 arranged contact openings 4, 4 'are oriented along the preferred direction 5, whereas the contact openings 4 arranged on the left and right in the horizontal direction are arranged perpendicular to the preferred direction 5. The contact connections 9, 9 ', 9'', 9''' are in the example 5 designed as p-vias, whereby the opposite p-vias 9, 9'' and 9', 9''' are each dimensioned the same and adjacent p-vias 9, 9' and 9'', 9''' are dimensioned differently . The p-vias 9, 9', 9'', 9''' are oriented 45 degrees to the preferred direction 5.

6 shows a vertically emitting semiconductor laser component 1 with an oval mesa 2 and an oval trench 8. The geometric course of the mesa 2 essentially corresponds to the course of the trench 8. The oval shape is essentially eye-shaped. The oval shape tapers horizontally to the left and right, perpendicular to the preferred direction 5. The contact openings 4, 4 'are oriented along the preferred direction 5.

7 shows an array 10 with a plurality of vertically emitting semiconductor laser components 1, which are arranged in a hexagonal arrangement in two rows. Each vertically emitting semiconductor laser component 1 has a surface grid 6. The array 10 has a wire bonding connection 11 on the top, which is intended for electrical contact with an external power source. The array 10 is at least partially covered with a protective layer. The outermost layer in the light emission direction 7 is formed by an unetched cap layer 12.

8th shows an array 10 with a large number of individually addressable array subareas. Two adjacent array subregions have a polarization rotated by 90 degrees, with the vertically emitting semiconductor laser components 1 of an individual array subregion having a uniform polarization. The surface grids 6 of two adjacent array subareas are therefore arranged orthogonally to one another. The dominant polarization orientation is therefore rotated by 90 degrees. The wire bond connections 11 of the array subareas are arranged alternately on the top and bottom. The array 10 also includes a chip code label 13 for identifying the array 10. The array 10 also includes a labeling symbol 14, which is in particular machine-readable and is used to align and identify the array 10.

The vertically emitting semiconductor laser component 1 is produced by epitaxial layer growth. The epitaxial growth ends anti-resonantly. The surface grid 6 is locally annular and etched into the final layer of the epitaxy in order to provide a polarization orientation.

During a subsequent lift-off process step of the contact 3, which is carried out in a clean room, a layer of paint that is covered with metal is removed with solvent and the metal layer is thus also removed at the same time. If the contact 3 were designed as a closed ring in this case, it is possible that the solvent would not get into the interior of the ring. The light exit opening (also called the facet) remains closed and covered with the lacquer layer and the metal layer. An opened ring-shaped contact 3 thus enables simplified processability by simplifying the removal of the lacquer layer and the metal layer on the facet. The entire surface grid 6 is then coated with a thin dielectric.

9 shows an array 10 with intersecting conductor tracks 15, 15 ', which are arranged one above the other at 90 degrees to one another in a fabric-like structure. The conductor tracks 15, 15' cross each other in an intersection area 16, which electrically and thermally insulates the crossing conductor tracks 15, 15' from one another.

10 shows the array 10 9 in top view. Each vertically emitting semiconductor laser component 1 has two opposite contact connections 9, 9 ', which are connected to two opposite contact connections 9 '' of the adjacent semiconductor laser component 1 by a conductor track 15.

11 shows a chip 17 with a length 18 along a longitudinal direction, which is oriented perpendicular to the light emission direction 7. The chip 17 also has a width 19 along a width direction that is oriented perpendicular to the light emission direction 7. The width 19 is smaller than the length 18. The chip 17 has a height 20 along a height direction which corresponds to the light emission direction 7. The chip 17 has a vertically emitting semiconductor laser component 1.

12 shows chip 17 11 in top view. The width 19 along the width direction extends parallel to the preferred direction 5.

The features described or shown in the above description, the claims, the exemplary embodiments and the figures can be important individually or in any combination for realizing the various embodiments of the invention.

Reference symbols

1

Vertically emitting semiconductor laser component 1

2

Mesa 2

3

Contact 3

4

Contact opening 4

4'

Further contact opening 4'

5

Preferred direction 5

6

Surface grid 6

7

Light emission direction 7

8th

Trench 8

9

Contact connection 9

9'

Contact connection 9'

9''

Contact connection 9''

9'''

Contact connection 9'''

10

Array 10

11

Wire bond connection 11

12

Cap layer 12

13

Chip code label 13

14

Label symbol 14

15

Conductor track 15

15'

Conductor track 15'

16

Crossing area 16

17

Chip 17

18

Length 18

19

Width 19

20

Height 20

Claims (15)

Vertically emitting semiconductor laser component (1) comprising a semiconductor material with an optical axis; a mesa (2) for emitting light in a light emission direction (7); a contact (3) for electrically contacting the mesa (2), which has a contact opening (4); wherein the contact opening (4) is arranged along a preferred direction (5), characterized in that the optical axis is arranged along the preferred direction (5). Vertical emitting semiconductor laser component (1) having a mesa (2) for emitting light in a light emission direction (7); a contact (3) for electrically contacting the mesa, which has a contact opening (4); a surface grid (6) for polarizing the light, which is preferably arranged above the mesa (2) in the light emission direction (7); wherein the contact opening (4) is arranged along a preferred direction (5); characterized in that the surface grid (6) is arranged perpendicular or parallel to the preferred direction (5). Vertical emitting semiconductor laser component (1) having a mesa (2) for emitting light in a light emission direction (7); a contact (3) for electrically contacting the mesa (2), which has a contact opening (4); wherein the contact opening (4) is arranged along a preferred direction (5); characterized in that the mesa (2) has an oval shape in plan view along the light emission direction (7), which tapers in at least one area perpendicular or parallel to the preferred direction (5). Vertical emitting semiconductor laser component (1) according to one of the preceding claims, which has a further contact opening (4') which is arranged along the preferred direction (5). Vertically emitting semiconductor laser component (1) according to one of the preceding claims; where the contact (3) comprises a plurality of contact connections (9, 9', 9'', 9'''); and of the plurality of contact connections (9, 9', 9'', 9'''), at least two contact connections (9) are dimensioned differently and one of the differently dimensioned contact connections (9) along the preferred direction (5) or vertically or in a 45 -degree angle to the preferred direction (5) is arranged. Vertically emitting semiconductor laser component (1) according to the preceding claim, in which two opposite contact connections (9, 9', 9'', 9''') are dimensioned essentially the same. Vertically emitting semiconductor laser component (1) according to one of the preceding claims; comprising a trench (8) which at least partially surrounds the mesa (2); wherein the trench (8) has an oval shape in plan view along the light emission direction (7), which tapers in at least one area perpendicular to or along the preferred direction (5). Vertical emitting semiconductor laser component (1) according to one of the preceding claims, in which a curve shape of the contact (3) corresponds to a curve shape of the mesa (2). Array (10) comprising a plurality of vertically emitting semiconductor laser components (1), of which at least one vertically emitting semiconductor laser component (1), preferably all vertically emitting semiconductor laser components (1), is/are designed according to one of the preceding claims. Array (10) according to the preceding claim, in which the vertically emitting semiconductor laser components (1) are arranged essentially in an equilateral triangle in plan view along the light emission direction (7). Array (10) according to one of the preceding claims on the array, in which the vertically emitting semiconductor laser components (1) are arranged hexagonally to one another in plan view along the light emission direction (7). Array (10) according to one of the previous ones Claims 9 or 10 , in which the vertically emitting semiconductor laser components (1) are arranged rectangularly to one another in a top view along the light emission direction (7). Array (10) according to one of the preceding claims on the array, comprising at least four vertically emitting semiconductor laser components (1), in which the at least four vertically emitting semiconductor laser components (1), preferably all vertically emitting semiconductor laser components (1), have two contact connections (9, 9 '). and wherein two opposing contact connections (9, 9', 9'', 9''') of two vertically emitting semiconductor laser components (1) are connected to one another via a conductor track (15, 10'); and wherein intersecting conductor tracks (15, 15') are spaced apart from one another in the light emission direction (7) at least within an intersection region (16) and are arranged offset one above the other. Array (10) according to one of the preceding claims on the array, comprising a plurality of individually addressable array subregions with at least one vertically emitting semiconductor laser component (1), wherein the array subareas have a different polarization, in particular a polarization rotated by 90 degrees, wherein preferably the vertically emitting semiconductor laser components (1) of an individual array subregion have a uniform polarization. Chip (17) comprising a vertically emitting semiconductor laser component (1) according to one of the preceding claims on the vertically emitting semiconductor laser component (1) or an array (10) according to one of the preceding claims on the array (10), which chip (17) has a height along the light emission direction (7), as well as a width and a length perpendicular to the light emission direction (7); where the length is greater than the width and wherein the length and/or the width are arranged along the preferred direction (5).

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